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    METHOD FOR METALLIZING DIELECTRIC SUBSTRATE SURFACE, AND DIELECTRIC SUBSTRATE PROVIDED WITH METAL FILM
    4.
    发明公开
    METHOD FOR METALLIZING DIELECTRIC SUBSTRATE SURFACE, AND DIELECTRIC SUBSTRATE PROVIDED WITH METAL FILM 审中-公开
    方法金属化的电介质基板表面和带金属膜的介质基片

    公开(公告)号：EP3112499A1

    公开(公告)日：2017-01-04

    申请号：EP15754572.4

    申请日：2015-02-24

    申请人： Osaka University ,  NOF Corporation

    发明人： YAMAMURA Kazuya ,  OHKUBO Yuji ,  SATO Haruka ,  HIKITA Masaya

    IPC分类号： C23C18/08 ,  C23C18/04

    CPC分类号： C23C18/04 ,  C09D7/63 ,  C09D11/52 ,  C09D151/003 ,  C09D151/08 ,  C09J5/00 ,  C09J9/02 ,  C09J11/06 ,  C09J151/003 ,  C09J151/08 ,  C09J2427/006 ,  C09J2479/086 ,  C23C18/08 ,  H01J37/32055 ,  H01J2237/3328

    摘要： A method includes: generating a peroxide radical on a dielectric substrate surface by treating the dielectric substrate surface with atmospheric pressure plasma using a rare gas; fixing a functional group forming a coordinate bond with a silver ion, by reacting a grafting agent; and applying a silver-containing composition to the substrate surface, followed by heating and curing the silver-containing composition, to thereby form a silver thin film layer, the silver-containing composition containing a silver compound (A) represented by Formula (1) and an amine compound (B) represented by Formula (2), the silver compound (A) being contained in an amount of 10 to 50% by mass, the amine compound (B) being contained in an amount of 50 to 90% by mass, relative to a total amount of 100% by mass of the silver compound (A) and the amine compound (B). The method enables to form a metal film having high adhesiveness even on the surface of a fluorine resin, which is suitable as a dielectric substrate due to its property of avoidance of delay in signal transmission speed or increase in power consumption, but has extremely low adhesiveness. [C. 1]


    (R 1 : a hydrogen atom, -(CY 2 )a-CH a , or -((CH 2 )b-O-CHZ)c-CH 3 ; R 2 : -(CY 2 )d-CH 3 or -((CH 2 )e-O-CHZ)f-CH 3 ; Y: a hydrogen atom or -(CH 2 )g-CH 3 ; Z: a hydrogen atom or -(CH 2 )h-CH 3 ; a: an integer of 0 to 8; b: an integer of 1 to 4; c: an integer of 1 to 3; d: an integer of 1 to 8; e: an integer of 1 to 4; f: an integer of 1 to 3; g: an integer of 1 to 3; h: an integer of 1 or 2)

    摘要翻译： 一种方法，包括：在电介质基板表面产生过氧化物自由基通过处理电介质基片与使用稀有气体大气压等离子体表面; ，通过使接枝剂固定的官能团形成具有银离子配位键; 和将组合物施加到基板表面上，随后通过加热和固化该含银组合物，从而形成银薄膜层含银时，含银组合物含有由式表示的银化合物（A）（1） 和由下式表示的胺化合物（B）的（2），银化合物（A）包含在通过在10至50质量％的量，胺化合物（B）包含在在50〜90％ 质量，相对于由银化合物（A）和胺化合物（B）的100质量％的总量。 该方法能够形成即使在氟树脂的表面的-具有金属膜高粘附性，所有这一切都适合作为电介质基片，因为它避免在信号传输速度或消耗电力的增加延迟的性质，但是具有非常低的粘合性 ， [C. 1]（R 1：氢原子， - （CY 2）-CH一个，或 - （（CH 2）B○-CHZ）C-CH 3; R 2： - （CY 2）D-CH 3或 - （（CH 2）在线-O-CHZ）F-CH 3; Y：氢原子或 - （CH 2）G-CH 3; Z：氢原子或 - （CH 2）H CH 3; A：在整数 0〜8; b：1〜4的整数; C：1〜3的整数; D：1至8的整数，e：1至4的整数; F：1〜3的整数; 克：1至3的整数; H：或2）的整数

    METHOD FOR METALLIZING DIELECTRIC SUBSTRATE SURFACE, AND DIELECTRIC SUBSTRATE PROVIDED WITH METAL FILM
    6.
    发明公开
    METHOD FOR METALLIZING DIELECTRIC SUBSTRATE SURFACE, AND DIELECTRIC SUBSTRATE PROVIDED WITH METAL FILM 审中-公开
    VERFAHREN ZUR METALLISIERUNG EINER DIELEKTRISCHENSUBSTRATOBERFLÄCHEUND DIELEKTRISCHES SUBSTRAT MIT METALLFOLIE

    公开(公告)号：EP3112499A4

    公开(公告)日：2017-10-04

    申请号：EP15754572

    申请日：2015-02-24

    申请人： UNIV OSAKA ,  NOF CORP

    发明人： YAMAMURA KAZUYA ,  OHKUBO YUJI ,  SATO HARUKA ,  HIKITA MASAYA

    IPC分类号： C23C18/08 ,  C23C18/04

    CPC分类号： C23C18/04 ,  C09D7/1233 ,  C09D7/63 ,  C09D11/52 ,  C09D151/003 ,  C09D151/08 ,  C09J5/00 ,  C09J9/02 ,  C09J11/06 ,  C09J151/003 ,  C09J151/08 ,  C09J2427/006 ,  C09J2479/086 ,  C23C18/08 ,  H01J37/32055 ,  H01J2237/3328

    摘要： A method includes: generating a peroxide radical on a dielectric substrate surface by treating the dielectric substrate surface with atmospheric pressure plasma using a rare gas; fixing a functional group forming a coordinate bond with a silver ion, by reacting a grafting agent; and applying a silver-containing composition to the substrate surface, followed by heating and curing the silver-containing composition, to thereby form a silver thin film layer, the silver-containing composition containing a silver compound (A) represented by Formula (1) and an amine compound (B) represented by Formula (2), the silver compound (A) being contained in an amount of 10 to 50% by mass, the amine compound (B) being contained in an amount of 50 to 90% by mass, relative to a total amount of 100% by mass of the silver compound (A) and the amine compound (B). The method enables to form a metal film having high adhesiveness even on the surface of a fluorine resin, which is suitable as a dielectric substrate due to its property of avoidance of delay in signal transmission speed or increase in power consumption, but has extremely low adhesiveness. [C. 1] (R 1 : a hydrogen atom, -(CY 2 )a-CH a , or -((CH 2 )b-O-CHZ)c-CH 3 ; R 2 : -(CY 2 )d-CH 3 or -((CH 2 )e-O-CHZ)f-CH 3 ; Y: a hydrogen atom or -(CH 2 )g-CH 3 ; Z: a hydrogen atom or -(CH 2 )h-CH 3 ; a: an integer of 0 to 8; b: an integer of 1 to 4; c: an integer of 1 to 3; d: an integer of 1 to 8; e: an integer of 1 to 4; f: an integer of 1 to 3; g: an integer of 1 to 3; h: an integer of 1 or 2)

    摘要翻译： 一种方法包括：通过使用稀有气体用大气压等离子体处理电介质衬底表面，在电介质衬底表面上产生过氧化物自由基; 通过使接枝剂反应而固定与银离子形成配位键的官能团; （1）表示的银化合物（A）的含银组合物，然后加热并固化该含银组合物，从而形成银薄膜层， 和由式（2）表示的胺化合物（B），所述银化合物（A）的含量为10〜50质量％，所述胺化合物（B）的含量为50〜90质量％ 相对于银化合物（A）和胺化合物（B）的总量100质量％而言。 由于该方法具有避免信号传输速度的延迟或功耗增加的特性，所以即使在适合作为电介质基板的氟树脂的表面上也能够形成具有高粘附性的金属膜，但是具有极低的粘附性 。 [C。 1]（R 1：氢原子， - （CY 2）a -CH a或 - （（CH 2）b O-CHZ）c -CH 3; R 2： - （CY 2）d -CH 3或 - （（CH 2）eO-CHZ）f -CH 3; Y：氢原子或 - （CH 2）g -CH 3; Z：氢原子或 - （CH 2）h -CH 3; a： 0〜8的整数; b：1〜4的整数; c：1〜3的整数; d：1〜8的整数; e：1〜4的整数; f：1〜3的整数。 g：1〜3的整数; h：1或2的整数）