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公开(公告)号：EP2879173A2
公开(公告)日：2015-06-03
申请号：EP13194235.1
申请日：2013-11-25
发明人： Cheng, Shih Jye , Lu, Tung Bao
IPC分类号： H01L23/485 , H01L21/60 , C25D3/64 , C25D3/48
CPC分类号： H01L21/4825 , H01L23/15 , H01L23/49816 , H01L23/4985 , H01L23/49866 , H01L23/49894 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03464 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05005 , H01L2224/05027 , H01L2224/05139 , H01L2224/05144 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05541 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11825 , H01L2224/11848 , H01L2224/11901 , H01L2224/13005 , H01L2224/13082 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13562 , H01L2224/13564 , H01L2224/1357 , H01L2224/13644 , H01L2224/13647 , H01L2224/16225 , H01L2224/16227 , H01L2224/16238 , H01L2224/2919 , H01L2224/32225 , H01L2224/73204 , H01L2224/81191 , H01L2224/814 , H01L2224/8159 , H01L2224/8169 , H01L2224/81744 , H01L2224/81815 , H01L2224/8185 , H01L2224/81862 , H01L2224/83104 , H01L2924/01322 , H01L2924/15788 , H01L2924/351 , H01L2924/01079 , H01L2924/01046 , H01L2924/00014 , H01L2924/01074 , H01L2924/01082 , H01L2924/00012 , H01L2924/0665 , H01L2924/0655 , H01L2924/206 , H01L2924/014 , H01L2924/00 , H01L2224/1146
摘要： A semiconductor structure includes a semiconductor device (100), a conductive pad (102) on the semiconductor device (100), and a Ag 1-x Y x alloy bump (101) over the conductive pad (102). The Y of the Ag 1-x Y x bump (101) comprises metals forming complete solid solution with Ag at arbitrary weight percentage (Au and/or Pd), and the x of the Ag 1-x Y x alloy bump (101) is in a range of from about 0.005 to about 0.25. A difference between standard deviation and mean value of a grain size distribution of the Ag 1-x Y x alloy bump (101) is in a range of from about 0.2 µm to about 0.4 µm. An average grain size of the Ag 1-x Y x alloy bump (101) on a longitudinal cross sectional plane is in a range of from about 0.5 µm to about 1.5 µm. The alloy bump (101) is formed by electroplating.
摘要翻译： 一种半导体结构包括半导体器件（100），半导体器件（100）上的导电焊盘（102）和导电焊盘（102）上的Ag1-xYx合金凸点（101）。 Ag1-xYx凸块（101）的Y包含与Ag以任意重量百分比（Au和/或Pd）形成完全固溶体的金属，并且Ag1-xYx合金凸块（101）的x的范围为 约0.005至约0.25。 Ag1-xYx合金凸块（101）的标准偏差与晶粒尺寸分布的平均值之差在约0.2μm至约0.4μm的范围内。 纵向截面上的Ag 1-x Y x合金凸块（101）的平均晶粒尺寸在约0.5μm至约1.5μm的范围内。 合金凸块（101）通过电镀形成。
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公开(公告)号：EP2879173A3
公开(公告)日：2015-08-26
申请号：EP13194235.1
申请日：2013-11-25
发明人： Cheng, Shih Jye , Lu, Tung Bao
IPC分类号： H01L23/485 , H01L21/60 , C25D3/64 , C25D3/48
CPC分类号： H01L21/4825 , H01L23/15 , H01L23/49816 , H01L23/4985 , H01L23/49866 , H01L23/49894 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03464 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05005 , H01L2224/05027 , H01L2224/05139 , H01L2224/05144 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05541 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11825 , H01L2224/11848 , H01L2224/11901 , H01L2224/13005 , H01L2224/13082 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13562 , H01L2224/13564 , H01L2224/1357 , H01L2224/13644 , H01L2224/13647 , H01L2224/16225 , H01L2224/16227 , H01L2224/16238 , H01L2224/2919 , H01L2224/32225 , H01L2224/73204 , H01L2224/81191 , H01L2224/814 , H01L2224/8159 , H01L2224/8169 , H01L2224/81744 , H01L2224/81815 , H01L2224/8185 , H01L2224/81862 , H01L2224/83104 , H01L2924/01322 , H01L2924/15788 , H01L2924/351 , H01L2924/01079 , H01L2924/01046 , H01L2924/00014 , H01L2924/01074 , H01L2924/01082 , H01L2924/00012 , H01L2924/0665 , H01L2924/0655 , H01L2924/206 , H01L2924/014 , H01L2924/00 , H01L2224/1146
摘要： A semiconductor structure includes a semiconductor device (100), a conductive pad (102) on the semiconductor device (100), and a Ag 1-x Y x alloy bump (101) over the conductive pad (102). The Y of the Ag 1-x Y x bump (101) comprises metals forming complete solid solution with Ag at arbitrary weight percentage (Au and/or Pd), and the x of the Ag 1-x Y x alloy bump (101) is in a range of from about 0.005 to about 0.25. A difference between standard deviation and mean value of a grain size distribution of the Ag 1-x Y x alloy bump (101) is in a range of from about 0.2 µm to about 0.4 µm. An average grain size of the Ag 1-x Y x alloy bump (101) on a longitudinal cross sectional plane is in a range of from about 0.5 µm to about 1.5 µm. The alloy bump (101) is formed by electroplating.
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