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公开(公告)号:EP4420203A1
公开(公告)日:2024-08-28
申请号:EP22884559.0
申请日:2022-10-24
IPC分类号: H01S5/183 , H01L21/02 , H01L21/306 , H01L21/311
CPC分类号: H01S5/021 , H01S5/0217 , H01S5/0215 , H01S2304/1220130101 , H01S5/18358 , H01S5/04257 , H01S5/2009 , H01S5/34333 , H01S5/2063 , H01S5/18308 , H01S5/18388 , H01S5/0234 , H01S5/18361
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公开(公告)号:EP4406079A1
公开(公告)日:2024-07-31
申请号:EP22790132.9
申请日:2022-09-22
IPC分类号: H01S5/042 , H01S5/227 , H01S5/223 , H01S5/50 , H01S5/068 , H01S5/12 , H01S5/10 , H01S5/20 , H01S5/30 , H01S5/343 , H01S5/028 , H01S5/026
CPC分类号: H01S5/2036 , H01S5/02345 , H01S5/04254 , H01S5/1014 , H01S5/223 , H01S5/50 , H01S5/0287 , H01S5/04256 , H01S5/0265 , H01S5/1234 , H01S5/04257 , H01S2301/16620130101
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公开(公告)号:EP4443674A1
公开(公告)日:2024-10-09
申请号:EP24166009.1
申请日:2024-03-25
申请人: II-VI Delaware, Inc.
CPC分类号: H01S5/3095 , H01S5/423 , H01S5/18325 , H01S5/18338 , H01S5/18305 , H01S5/0208 , H01S5/04257 , H01S5/2054 , H01S2301/1620130101 , H01S2301/1820130101 , H01S5/18383
摘要: This disclosure describes a bottom surface emitting vertical cavity surface emitting laser (BSE VCSEL) with a lithographically defined aperture. The BSE VCSEL may be oxide-free. Two contacts are located above a substrate. An aperture and one or more active regions are located between two DBRs. A first contact is coupled to the substrate and the first DBR, which is below the aperture. A second contact is coupled to the second DBR, which is above the aperture.
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公开(公告)号:EP4111559B1
公开(公告)日:2024-10-02
申请号:EP21761669.7
申请日:2021-02-12
IPC分类号: H01S5/026 , H01S5/42 , G01S7/481 , H01S5/02257 , H01S5/30 , H01S5/0683 , H01S5/02212 , H01S5/02216 , H01S5/024 , H01S5/042 , H01S5/00 , H01S5/183
CPC分类号: H01S5/02212 , H01S5/18311 , H01S5/423 , H01S5/04256 , H01S5/3095 , H01S5/02469 , H01S5/02216 , H01S5/06835 , H01S5/0428 , H01S5/0014 , H01S5/04257 , H01S5/18383 , H01S2301/17620130101 , H01S5/18377 , H01S5/0264 , H01S5/18305 , H01S5/18388 , H01S5/18386 , G01S7/4815 , G01S7/4813 , H01S5/02345 , H01S5/02257 , H01S5/02325 , H01S5/0683 , H01S5/0234
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公开(公告)号:EP4210184B1
公开(公告)日:2024-07-24
申请号:EP22305015.4
申请日:2022-01-10
IPC分类号: H01S5/026 , H01S5/0234 , H01S5/042 , H01S5/12 , H01S5/22 , H01S5/227 , H01S5/00 , H01S5/028 , H01S5/125 , H01S5/02
CPC分类号: H01S5/0265 , H01S5/0234 , H01S5/04257 , H01S5/0287 , H01S5/125 , H01S5/12 , H01S5/2224 , H01S5/2275 , H01S5/005 , H01S5/0207
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公开(公告)号:EP4178051B1
公开(公告)日:2024-05-15
申请号:EP22206233.3
申请日:2022-11-08
CPC分类号: H01S5/02476 , H01S5/02415 , H01S5/02469 , H01S5/021 , H01S2301/17620130101 , H01S5/04254 , H01S5/1032 , H01S5/04257 , H01S5/0239 , H01S5/02345 , H01S5/2224
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公开(公告)号:EP4443672A2
公开(公告)日:2024-10-09
申请号:EP24174431.7
申请日:2023-06-13
发明人: Komljenovic, Tin , Zhang, Zeyu , Zhang, Chong , Tran, Minh
IPC分类号: H01S5/16
CPC分类号: H01S5/02345 , H01S5/04257 , H01S5/1032 , H01S5/162 , H01S5/026 , H01S5/0261 , H01S5/02461 , H01S5/0287 , H01S5/1085 , H01S5/1014 , H01S5/1064 , G02B6/1228 , H01S5/028
摘要: A device is made up of an active structure attached to a substrate, the active structure having a facet through which light couples between the active structure and another structure attached to the substrate; and an active region comprising a quantum well region that includes a sub-region, adjacent the facet, configured to undergo QWI in response to heat. The active structure also contains a heating element, positioned close to the facet and operable such that heat generated by the heating element raises a temperature of the sub-region of the active region near the facet high enough to activate QWI in that sub-region, in turn causing a reduction in optical absorption, without raising temperatures in any other portion of the active region enough to cause significant thermal stress at any interface between the substrate and the active structure.
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公开(公告)号:EP4439880A1
公开(公告)日:2024-10-02
申请号:EP23178849.8
申请日:2023-06-13
发明人: Komljenovic, Tin , Zhang, Zeyu , Zhang, Chong , Tran, Minh
CPC分类号: H01S5/02345 , H01S5/04257 , H01S5/1032 , H01S5/162 , H01S5/026 , H01S5/0261 , H01S5/02461 , H01S5/0287 , H01S5/1085 , H01S5/1014 , H01S5/1064 , G02B6/1228 , H01S5/028
摘要: A device is made up of an active structure attached to a substrate, the active structure having a facet through which light couples between the active structure and another structure attached to the substrate; and an active region comprising a quantum well region that includes a sub-region, adjacent the facet, configured to undergo QWI in response to heat. The active structure also contains a heating element, positioned close to the facet and operable such that heat generated by the heating element raises a temperature of the sub-region of the active region near the facet high enough to activate QWI in that sub-region, in turn causing a reduction in optical absorption, without raising temperatures in any other portion of the active region enough to cause significant thermal stress at any interface between the substrate and the active structure.
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公开(公告)号:EP3901988B1
公开(公告)日:2024-07-31
申请号:EP20744838.2
申请日:2020-01-13
CPC分类号: H01S5/1042 , H01S5/3412 , H01S5/04257 , H01S5/50 , H01S5/4025 , H01S5/2086 , H01S2301/17320130101
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公开(公告)号:EP3923424B1
公开(公告)日:2024-07-24
申请号:EP20178973.2
申请日:2020-06-09
CPC分类号: H01S5/021 , H01S5/0217 , H01S5/0216 , H01S2301/17620130101 , H01S5/04257 , H01S5/1032 , H01S5/02461 , H01S5/02326 , H01S5/02345
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