公开(公告)号：EP2456068B1

公开(公告)日：2013-06-19

申请号：EP10014844.4

申请日：2010-11-22

申请人： Telefonaktiebolaget LM Ericsson (publ)

发明人： Din, Imad ud ,  Sjöland, Henrik

IPC分类号： H03F1/02 ,  H03F1/22 ,  H03F1/56 ,  H03F3/45 ,  H03F3/193

CPC分类号： H03F3/193 ,  H03F1/0205 ,  H03F1/223 ,  H03F1/565 ,  H03F3/45179 ,  H03F3/45197 ,  H03F2200/181 ,  H03F2200/294 ,  H03F2200/451 ,  H03F2200/489 ,  H03F2200/492 ,  H03F2203/45316

公开(公告)号：EP1512221A1

公开(公告)日：2005-03-09

申请号：EP03741882.9

申请日：2003-06-06

申请人： Skyworks Solutions, Inc.

发明人： CANYON, James, C. ,  ROHLFING, Stephan, M.

IPC分类号： H03G3/20

CPC分类号： H03F1/0261 ,  H03F1/0211 ,  H03F1/30 ,  H03F1/302 ,  H03F3/245 ,  H03F2200/108 ,  H03F2200/18 ,  H03F2200/181 ,  H03F2200/222 ,  H03F2200/294 ,  H03F2200/318 ,  H03F2200/372 ,  H03F2200/387 ,  H03F2200/411 ,  H03F2200/451 ,  H03F2200/504 ,  H03F2200/516 ,  H03F2200/555 ,  H03F2203/7227 ,  H03G3/004 ,  H03G3/3042

摘要： A radio frequency (RF) power amplifying system. The power amplifying system includes a power controller and power amplifiers (220) comprising power transistors (354, 358) and bias circuitry (310). The bias circuitry provides current to the base of the one or more power transistors (354, 358) in such a manner as to automatically maintain the power transistors in substantially linear operation throughout the variation in voltage as supplied by the power controller.

公开(公告)号：EP3133735A1

公开(公告)日：2017-02-22

申请号：EP16182864.5

申请日：2016-08-04

申请人： NXP USA, Inc.

发明人： Jones, Jeffrey K.

IPC分类号： H03F3/195 ,  H03F3/21 ,  H03F3/213 ,  H03F1/02 ,  H03F1/56 ,  H01L23/498 ,  H01L21/48 ,  H01L49/02

CPC分类号： H03F3/195 ,  H01F2017/0073 ,  H01F2017/0086 ,  H01L21/486 ,  H01L23/3677 ,  H01L23/481 ,  H01L23/49568 ,  H01L23/49827 ,  H03F1/0288 ,  H03F1/565 ,  H03F3/211 ,  H03F3/213 ,  H03F2200/108 ,  H03F2200/165 ,  H03F2200/171 ,  H03F2200/181 ,  H03F2200/216 ,  H03F2200/222 ,  H03F2200/225 ,  H03F2200/297 ,  H03F2200/301 ,  H03F2200/391 ,  H03F2200/42 ,  H03F2200/432 ,  H03F2200/451 ,  H03F2200/48 ,  H03F2200/75 ,  H03F2203/21103 ,  H03F2203/21106 ,  H03F2203/21112 ,  H03F2203/21139 ,  H03F2203/21142 ,  H03F2203/21157

摘要： An amplifier module includes a module substrate. Conductive interconnect structures and an amplifier device are coupled to a top surface of the module substrate. The interconnect structures partially cover the module substrate top surface to define conductor-less areas at the top surface. The amplifier device includes a semiconductor substrate, a transistor, a conductive feature coupled to a bottom surface of the semiconductor substrate and to at least one of the interconnect structures, and a filter circuit electrically coupled to the transistor. The conductive feature only partially covers the semiconductor substrate bottom surface to define a conductor-less region that spans a portion of the bottom surface. The conductor-less region is aligned with at least one of the conductor-less areas at the module substrate top surface. The filter circuit includes a passive component formed over a portion of the semiconductor substrate top surface that is directly opposite the conductor-less region.

摘要翻译： 放大器模块包括模块衬底。 导电互连结构和放大器装置耦合到模块基板的顶表面。 互连结构部分地覆盖模块衬底顶表面以限定顶表面处的无导体区域。 放大器装置包括半导体衬底，晶体管，耦合到半导体衬底的底表面和至少一个互连结构的导电特征，以及电耦合到晶体管的滤波器电路。 导电特征仅部分地覆盖半导体衬底底表面以限定跨越底表面的一部分的无导体区域。 无导体区域与模块衬底顶表面处的至少一个无导体区域对准。 滤波器电路包括形成在半导体衬底顶表面的与无导体区域直接相对的部分上的无源部件。

公开(公告)号：EP2883306A1

公开(公告)日：2015-06-17

申请号：EP12750352.2

申请日：2012-08-07

申请人： Telefonaktiebolaget L M Ericsson (publ)

发明人： BAO, Mingquan ,  SU, Yu

IPC分类号： H03F3/193 ,  H03F3/60 ,  H04B1/04 ,  H04L27/36 ,  H03F1/22

CPC分类号： H03H11/26 ,  H01P1/38 ,  H01P5/12 ,  H03F1/22 ,  H03F3/193 ,  H03F3/601 ,  H03F3/608 ,  H03F2200/108 ,  H03F2200/181 ,  H03H5/12 ,  H03H7/32 ,  H03H11/04

摘要： A negative group delay circuit (200, 300) comprising a negative group delay component (205, 600, 100), also comprising a circulator (220, 320) with three ports (206, 207, 250), further comprising a first resonator (230), with the negative group delay component (205) arranged between an input port (210) of the negative group delay circuit (200, 300) and a first port (206) in the circulator (220, 320). The first resonator (230) is arranged between a second port (207) of the circulator (220, 320) and a first reflection amplifier (240), so that signals reflected from the first reflection amplifier (240) to the second port (207) of the circulator (220; 320) through the first resonator (230) are emitted at the third port (250) of the circulator (220; 320). The third port is arranged to be used as an output port of the negative group delay circuit (200, 300).

公开(公告)号：EP2793394A4

公开(公告)日：2015-04-29

申请号：EP12858137

申请日：2012-11-09

申请人： PANASONIC CORP

发明人： OKAJIMA TOSHIYUKI

IPC分类号： H03F1/52 ,  H03F3/24

CPC分类号： H03F3/213 ,  H03F1/0261 ,  H03F1/523 ,  H03F3/193 ,  H03F3/195 ,  H03F3/245 ,  H03F3/72 ,  H03F2200/108 ,  H03F2200/15 ,  H03F2200/18 ,  H03F2200/181 ,  H03F2200/451 ,  H03F2200/471 ,  H03F2200/555 ,  H03F2203/7206 ,  H03F2203/7221 ,  H03F2203/7227

摘要： A high-output electric power amplifier using a depression-type FET includes a drain voltage supply portion 120, 220, and 320 adapted to create a positive voltage to be applied to a drain terminal in the depression-type FET, and a gate bias voltage supply portion 130, 230, and 330 adapted to create a negative voltage to be applied to a gate terminal in the depression-type FET, wherein the drain voltage supply portion uses an external commercial power supply as an electric power source, and the gate bias voltage supply portion uses a battery as an electric power source, in order to certainly prevent breakdowns of the FET due to excessive electric currents.

公开(公告)号：EP2793394A1

公开(公告)日：2014-10-22

申请号：EP12858137.8

申请日：2012-11-09

申请人： Panasonic Corporation

发明人： OKAJIMA, Toshiyuki

IPC分类号： H03F1/52 ,  H03F3/24

CPC分类号： H03F3/213 ,  H03F1/0261 ,  H03F1/523 ,  H03F3/193 ,  H03F3/195 ,  H03F3/245 ,  H03F3/72 ,  H03F2200/108 ,  H03F2200/15 ,  H03F2200/18 ,  H03F2200/181 ,  H03F2200/451 ,  H03F2200/471 ,  H03F2200/555 ,  H03F2203/7206 ,  H03F2203/7221 ,  H03F2203/7227

摘要： A high-output electric power amplifier using a depression-type FET includes a drain voltage supply portion 120, 220, and 320 adapted to create a positive voltage to be applied to a drain terminal in the depression-type FET, and a gate bias voltage supply portion 130, 230, and 330 adapted to create a negative voltage to be applied to a gate terminal in the depression-type FET, wherein the drain voltage supply portion uses an external commercial power supply as an electric power source, and the gate bias voltage supply portion uses a battery as an electric power source, in order to certainly prevent breakdowns of the FET due to excessive electric currents.

摘要翻译： 使用按压式FET的高输出功率放大器包括：漏极电压供给部120,220,320，其适于产生施加到该凹陷型FET中的漏极端子的正电压，以及栅极偏置电压 供给部分130,230和330，其适于产生要施加到凹陷型FET中的栅极端子的负电压，其中漏极电压提供部分使用外部商用电源作为电源，并且栅极偏置 电压供给部使用电池作为电源，以便可靠地防止由于过大的电流导致的FET的故障。

公开(公告)号：EP1512221B1

公开(公告)日：2013-08-28

申请号：EP03741882.9

申请日：2003-06-06

申请人： Skyworks Solutions, Inc.

发明人： CANYON, James, C. ,  ROHLFING, Stephan, M.

IPC分类号： H03F1/02 ,  H03F1/30 ,  H03F3/24 ,  H03G3/20 ,  H03G3/30 ,  H03G3/00

CPC分类号： H03F1/0261 ,  H03F1/0211 ,  H03F1/30 ,  H03F1/302 ,  H03F3/245 ,  H03F2200/108 ,  H03F2200/18 ,  H03F2200/181 ,  H03F2200/222 ,  H03F2200/294 ,  H03F2200/318 ,  H03F2200/372 ,  H03F2200/387 ,  H03F2200/411 ,  H03F2200/451 ,  H03F2200/504 ,  H03F2200/516 ,  H03F2200/555 ,  H03F2203/7227 ,  H03G3/004 ,  H03G3/3042

公开(公告)号：EP1876704B1

公开(公告)日：2011-03-16

申请号：EP07111332.8

申请日：2007-06-28

申请人： Infineon Technologies AG

发明人： Bakalski, Winfried ,  Zannoth, Markus

IPC分类号： H03F1/02

CPC分类号： H03F1/0261 ,  H03F1/0205 ,  H03F3/24 ,  H03F2200/108 ,  H03F2200/18 ,  H03F2200/181 ,  H03F2200/318

公开(公告)号：EP3335312A1

公开(公告)日：2018-06-20

申请号：EP16751124.5

申请日：2016-08-05

申请人： Raytheon Company

发明人： KAPER, Valery, S.

IPC分类号： H03F1/22 ,  H03F1/30 ,  H03F1/08 ,  H03F3/193

CPC分类号： H03F1/301 ,  H03F1/0222 ,  H03F1/086 ,  H03F1/223 ,  H03F3/193 ,  H03F2200/18 ,  H03F2200/181 ,  H03F2200/411 ,  H03F2200/447 ,  H03F2200/451 ,  H03F2200/504 ,  H03F2200/72 ,  H03F2200/75

摘要： An amplifier having a pair of transistors arranged in a cascode amplifier arrangement serially connected to a first voltage source. A DC bias regulator is provided having: a DC bias circuit for producing a reference voltage at a control electrode of a first one of the pair of transistors: and a voltage combiner having a pair of inputs, a first of the pair of inputs being coupled to the reference voltage and a second one of the pair of inputs being coupled to the first voltage source. The DC bias regulator produces a DC bias voltage at a control electrode of a second one of the pair of transistors related to a combination of the reference voltage and the first voltage source.

公开(公告)号：EP3160042A1

公开(公告)日：2017-04-26

申请号：EP16194844.3

申请日：2016-10-20

申请人： NXP USA, Inc.

发明人： Zhu, Ning ,  Jones, Jeffrey K ,  Holmes, Damon G.

IPC分类号： H03F1/56 ,  H03F3/195 ,  H01L23/66

CPC分类号： H03F1/565 ,  H01L23/66 ,  H01L2223/6655 ,  H01L2224/48091 ,  H01L2224/49175 ,  H03F3/19 ,  H03F3/195 ,  H03F2200/108 ,  H03F2200/181 ,  H03F2200/216 ,  H03F2200/222 ,  H03F2200/225 ,  H03F2200/297 ,  H03F2200/301 ,  H03F2200/309 ,  H03F2200/387 ,  H03F2200/391 ,  H03F2200/402 ,  H03F2200/451 ,  H03F2200/552 ,  H03F2200/75 ,  H01L2924/00014

摘要： Embodiments of RF amplifiers and packaged RF amplifier devices each include a transistor, an impedance matching circuit, and a video bandwidth circuit. The impedance matching circuit is coupled between the transistor and an RF I/O (e.g., an input or output lead). The video bandwidth circuit is coupled between a connection node of the impedance matching circuit and a ground reference node. The video bandwidth circuit includes a plurality of components, which includes an envelope inductor and an envelope capacitor coupled in series between the connection node and the ground reference node. The video bandwidth circuit further includes a first bypass capacitor coupled in parallel across one or more of the plurality of components of the video bandwidth circuit.

摘要翻译： RF放大器和封装RF放大器器件的实施例均包括晶体管，阻抗匹配电路和视频带宽电路。 阻抗匹配电路耦合在晶体管和RF I / O（例如输入或输出引线）之间。 视频带宽电路耦合在阻抗匹配电路的连接节点和接地参考节点之间。 视频带宽电路包括多个组件，其包括串联耦合在连接节点和接地参考节点之间的包络电感器和包络电容器。 视频带宽电路进一步包括跨越视频带宽电路的多个组件中的一个或多个并行耦合的第一旁路电容器。