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    Substrate processing apparatus and process of manufacturing substrate
    41.
    发明专利
    Substrate processing apparatus and process of manufacturing substrate 审中-公开
    基板加工装置及制造基板的工艺

    公开(公告)号：JP2014099427A

    公开(公告)日：2014-05-29

    申请号：JP2011050383

    申请日：2011-03-08

    Applicant: Hitachi Kokusai Electric Inc ,  株式会社日立国際電気

    Inventor： IMAI YOSHINORI ,  HARA DAISUKE ,  SASAKI TAKASHI

    IPC: H01L21/205 ,  C23C16/455

    CPC classification number: C23C16/45578 ,  C23C16/325 ,  C30B25/14 ,  C30B29/36

    Abstract: PROBLEM TO BE SOLVED: To uniformize an in-plane distribution of each of gas mixture rates when a silicon containing gas and a carbon atom containing gas are respectively supplied by independent gas supplying nozzles.SOLUTION: An odd number of first gas supplying nozzles 60 that supply a silicon atom containing gas and second gas supplying nozzles 70 that supply a carbon atom containing gas and a reduced gas are disposed alternately. A direction of a first gas supply port 68 is determined so that an intersection point (B) of gas jetting directions thereof is located farther than an intersection point (A) of gas jetting directions of second gas supply ports 72.

    Abstract translation: 要解决的问题：当含有含硅气体和含碳原子的气体分别由独立的气体供应喷嘴供应时，使每种气体混合物的面内分布均匀化。解决方案：奇数个第一气体供应喷嘴60 供给含有硅原子的气体和供给含有碳原子的气体和还原气体的第二气体供给喷嘴70交替配置。 确定第一气体供给口68的方向，使得其气体喷射方向的交点（B）位于比第二气体供给口72的气体喷射方向的交点（A）更远的位置。

    Configuration of Ald reactor of the connecting portion
    44.
    发明专利
    Configuration of Ald reactor of the connecting portion 有权

    公开(公告)号：JP5369178B2

    公开(公告)日：2013-12-18

    申请号：JP2011513013

    申请日：2009-06-09

    Applicant: ベネク・オサケユキテュア

    Inventor： ヤウヒアイネン，ミカ ,  ソイニネン，ペッカ

    IPC: C23C16/455

    CPC classification number: C23C16/45544 ,  C30B25/14

    Abstract: The invention relates to an arrangement in connection with an ALD reactor comprising a reaction chamber, the arrangement comprising fittings for feeding a reaction gas to the reaction chamber and for suctioning the reaction gas back, and fittings for feeding a barrier gas. The fittings for feeding and suctioning back the reaction gas and for feeding the barrier gas comprise a middle element having multiple parallel channels which extend through the element, and a first and a second flow-reversing element arranged at ends of the middle element into which the channels open, the flow-reversing elements being arranged to combine the channels in the middle element so as to provide an interchannel flow.

    Cvd reactors exhaust system of
    45.
    发明专利
    Cvd reactors exhaust system of 有权

    公开(公告)号：JP2013539209A

    公开(公告)日：2013-10-17

    申请号：JP2013523263

    申请日：2011-08-02

    Applicant: ビーコ・インストゥルメンツ・インコーポレイテッド

    Inventor： ガラリー，アレクサンダー・アイ

    IPC: H01L21/205 ,  C23C16/44

    CPC classification number: C23C16/4407 ,  C23C16/4412 ,  C30B25/14 ,  H01L21/6719 ,  H01L21/68764 ,  H01L21/68771

    Abstract: A chemical vapor deposition reactor and a method of wafer processing are provided. The reactor includes a reaction chamber having an interior, a gas inlet manifold communicating with the interior of the chamber, an exhaust system including an exhaust manifold having a passage and one or more ports, and one or more cleaning elements mounted within the chamber. The gas inlet manifold can admit process gasses to form a deposit on substrates held within the interior. The passage can communicate with the interior of the chamber through the one or more ports. The one or more cleaning elements are movable between (i) a run position in which the cleaning elements are remote from the one or more ports and (ii) a cleaning position in which the one or more cleaning elements are engaged in the one or more ports.

    Deposition apparatus and deposition method
    46.
    发明专利
    Deposition apparatus and deposition method 审中-公开
    沉积装置和沉积方法

    公开(公告)号：JP2013207196A

    公开(公告)日：2013-10-07

    申请号：JP2012076781

    申请日：2012-03-29

    Applicant: Nuflare Technology Inc ,  株式会社ニューフレアテクノロジー

    Inventor： YAMADA TAKUMI ,  SATO HIROSUKE

    IPC: H01L21/205 ,  C23C16/44

    CPC classification number: H01L21/02104 ,  C23C16/4585 ,  C30B25/10 ,  C30B25/12 ,  C30B25/14

    Abstract: PROBLEM TO BE SOLVED: To provide a deposition apparatus and a deposition method which inhibit a surplus thin film from being formed around a substrate in which deposition process is performed.SOLUTION: An epitaxial growth system 100 includes: a chamber 1; a reaction gas storage part 29 supplying a reaction gas 4 to the chamber 1; a susceptor 8 holding a substrate 7 placed on the chamber 1; a heater 9 heating the substrate 7 from below the susceptor 8; a rotation cylinder 17 supporting the susceptor 8 with its upper part, the rotation cylinder 17 where the heater 9 is disposed; a rotation shaft 16 disposed below the chamber 1 and rotating the rotation cylinder 17; a reflection ring 18 disposed so as to enclose the rotation cylinder 17 and reflecting heat from the heater 9; and an inert gas storage part 28 supplying an inert gas between the rotation cylinder 17 and the reflection ring 18. An upper end of the reflection ring 18 is placed so as to be higher than a surface of the substrate 7 and an upper end of the susceptor 8.

    Abstract translation: 要解决的问题：提供一种抑制在其中进行沉积工艺的基板周围形成剩余薄膜的沉积设备和沉积方法。解决方案：外延生长系统100包括：室1; 将反应气体4供给到室1的反应气体存储部29; 保持放置在室1上的基板7的基座8; 加热器9，从基座8的下方加热基板7; 支撑基座8及其上部的旋转圆筒17，设置有加热器9的旋转圆筒17; 旋转轴16，其设置在室1的下方并旋转​​旋转筒17; 设置为围绕旋转筒17并反射来自加热器9的热量的反射环18; 以及在旋转圆筒17和反射环18之间供给惰性气体的惰性气体储存部28，将反射环18的上端设置成比基板7的表面高， 感受器8。

    Metal chloride gas generating device, hydride gas phase growing device, and nitride semiconductor template
    48.
    发明专利
    Metal chloride gas generating device, hydride gas phase growing device, and nitride semiconductor template 审中-公开
    金属氯化物气体发生装置，氢化气相生长装置和氮化物半导体模板

    公开(公告)号：JP2013058741A

    公开(公告)日：2013-03-28

    申请号：JP2012174592

    申请日：2012-08-07

    Applicant: Hitachi Cable Ltd ,  日立電線株式会社

    Inventor： KONNO TAIICHIRO ,  FUJIKURA TSUNEAKI ,  MATSUDA MICHIKO

    IPC: H01L21/205 ,  C23C16/448 ,  C30B25/14 ,  C30B29/38 ,  H01L33/32

    CPC classification number: H01L21/0262 ,  C30B25/08 ,  C30B25/14 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02581 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/36

    Abstract: PROBLEM TO BE SOLVED: To provide a metal chloride gas generating device with unintentional mixture of impurities restrained, a hydride gas phase growing device, and a nitride semiconductor template.SOLUTION: An HVPE device 1 as a metal chloride gas generating device comprises: a cylindrical reactor 2 having a tank (housing part) 7 housing Ga (metal) 7a on an upstream side, and having a growing part 3b on which a growing substrate 11 is arranged on a downstream side; a translucent gas introduction pipe 60 arranged from an upstream side end 64 having a gas introduction port 64a to the growing part 3b via a tank 7, introducing gas from the upstream side end 64, supplying it to the tank 7, and supplying metal chloride gas generated by reacting the gas with Ga in the tank 7 to the growing part 3b; and heat shielding plates 9A and 9B arranged in the reactor 2 and thermally shielding the upstream side end 64 of the gas introduction pipe 60 from the growing part 3b. The gas introduction pipe 60 has such a structure that it is bent between the upstream side end 64 and the heat shielding plate 9B.

    Abstract translation: 要解决的问题：提供一种金属氯化物气体发生装置，其具有非限制性的杂质混合物，氢化物气相生长装置和氮化物半导体模板。 解决方案：作为金属氯化物气体发生装置的HVPE装置1包括：圆筒形反应器2，其具有在上游侧容纳Ga（金属）7a的罐（壳体部分）7，并且具有生长部分3b， 生长基板11布置在下游侧; 从具有气体导入口64a的上游侧端部64经由槽7配置到生长部3b的半透明气体导入管60，从上游侧端部64导入气体，将其供给到罐7，供给金属氯化物气体 通过使罐7中的气体与Ga反应生长部3b; 以及布置在反应器2中的热屏蔽板9A和9B，并且从生长部分3b对气体导入管60的上游侧端部64进行热屏蔽。 气体导入管60具有在上游侧端部64与隔热板9B之间弯曲的结构。 版权所有（C）2013，JPO＆INPIT

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