摘要:
PROBLEM TO BE SOLVED: To provide a light-transmitting conductive oxynitride which is not crystallized even if subjected to heat treatment and a method for manufacturing the light-transmitting conductive oxynitride, in order to solve such a problem that an electrode formed of a transparent conductive oxide is likely to be crystallized by heat treatment applied in the manufacturing process of a semiconductor device, a short circuit is likely to occur in a thin film element using an electrode having a significantly uneven surface due to crystallization, and thus reliability of the element is degraded.SOLUTION: An oxynitride including indium, gallium, and zinc, to which hydrogen atoms are added as impurities, is a light-transmitting conductive film which is not crystallized even if heated at 350°C.
摘要:
A method for producing a wear and corrosion resistant structure comprising coating said structure with at least one metal capable of forming boride compounds, which metal is selected from group IVB, VB and VIB metals, and AI; and treating said coated structure with electrochemical boriding procedure under an induction heating regime having the electromagnetic frequency ranging from 50 to 300 Hz is disclosed.
摘要:
PROBLEM TO BE SOLVED: To provide an in-line film forming apparatus wherein processing irregularity is prevented from being caused when reactive plasma processing or ion radiation processing is applied to a substrate held on a carrier. SOLUTION: A carrier 25 includes a holder 28 provided with a hole part 29 with the substrate arranged on the inner side thereof and a plurality of supporting members 30 attached to the peripheral part of the hole part 29 of the holder 28 so as to be elastically deformed, wherein the substrate inserted in the inner side of the supporting members 30 is freely attachably and detachably held while an outer peripheral part of the substrate is abutted on the plurality of supporting members 30. In a chamber performing reactive plasma processing or ion radiation processing to the substrate held on the carrier 25, ring members 32 having aperture parts 32a in a position corresponding to the substrate are disposed oppositely to at least one surface or both surfaces of the substrate held on the carrier 25 and a negative potential is applied to the ring members 32 and the holder 28 is grounded. COPYRIGHT: (C)2010,JPO&INPIT
摘要:
PROBLEM TO BE SOLVED: To provide a method for applying a NiAl based bond coat and a diffusion aluminide coating to a metal substrate. SOLUTION: This method contains a step for preparing a super alloy substrate having an external surface (38) and a step (140) for optionally and selectively cleaning the external surface (38) of the super alloy substrate. Further, this method contains a step for forming the coated external surface portion by coating (160) with the NiAl based alloy layer, on a part of the external surface of the super alloy substrate, in which the deposited NiAl based alloy is controlled so that the aluminum having about 6-25 wt.% controlled quantity is contained and further, the deposited aluminum level in this NiAl based alloy is about 50-100% of the aluminum finished level after aluminizing treatment, and thereafter, a step (180) for simultaneously aluminizing the coated external portion and a different surface on the super alloy substrate. COPYRIGHT: (C)2007,JPO&INPIT