公开(公告)号：JP3805825B2

公开(公告)日：2006-08-09

申请号：JP6114096

申请日：1996-03-18

申请人： 株式会社東芝

发明人： 寛 冨田 ,  良夫 小澤 ,  護 高橋

IPC分类号： H01L21/316 ,  H01L21/8247 ,  H01L21/336 ,  H01L27/115 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L29/66825 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662

摘要： A method of forming an insulating film on a surface of a substrate includes the steps of heating the substrate in a processing chamber in an atmosphere containing water vapor maintained at 900° C. or higher to form a first insulating film on a surface of the substrate; and cooling down the substrate in the presence of water vapor to a temperature of 600° C. or less at a temperature decreasing rate of 15° C./sec or more so as to limit a thickness of a second insulating film formed at an interface between the first insulating film and the substrate.

公开(公告)号：JP2006024888A

公开(公告)日：2006-01-26

申请号：JP2005074489

申请日：2005-03-16

申请人： Yamaha Corp ,  ヤマハ株式会社

发明人： TAKAMI SHUSEI

IPC分类号： H01L21/8234 ,  H01L21/265 ,  H01L21/28 ,  H01L21/283 ,  H01L21/31 ,  H01L21/316 ,  H01L21/336 ,  H01L21/469 ,  H01L27/088

CPC分类号： H01L21/26506 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02299 ,  H01L21/2822 ,  H01L21/31662 ,  H01L21/823462

摘要： PROBLEM TO BE SOLVED: To efficiently perform a thick gate oxidation, when plural gate oxide films having different thicknesses are formed by a one-time thermal oxidation treatment. SOLUTION: After forming a field insulating film 12 on one main front surface of a semiconductor substrate 10, sacrificial oxide films or the gate oxide films are formed as oxide films 14a, 14b. A resist layer 16 is used as a mask in an element hole 12a, and argon (or fluorine) ions are implanted via the oxide film 14a by means of an implantation treatment of one time or multiple times, to form an ion implantation layer 18. When the oxide films 14a, 14b are used as the sacrificial oxide films, the gate oxide films are formed in element holes 12a, 12b after removing the resist layer 16 and the oxide films 14a, 14b. When the oxide films 14a, 14b are used as the gate oxide films, the oxide films 14a, 14b are thinned, by etching after removing the resist layer 16, and thereafter, the oxide films 14a, 14b are thickened. The gate oxide film, corresponding to 14a, becomes thicker than that corresponding to 14b by forming the ion implantation layer 18. COPYRIGHT: (C)2006,JPO&NCIPI

摘要翻译： 要解决的问题：为了有效地执行厚栅氧化，当通过一次热氧化处理形成具有不同厚度的多个栅极氧化膜时。 解决方案：在半导体衬底10的一个主正面上形成场绝缘膜12之后，形成牺牲氧化膜或栅极氧化膜作为氧化膜14a，14b。 抗蚀剂层16用作元件孔12a中的掩模，并且通过一次或多次的注入处理经由氧化物膜14a注入氩（或氟）离子，以形成离子注入层18。 当氧化膜14a，14b用作牺牲氧化膜时，在除去抗蚀剂层16和氧化物膜14a，14b之后，在元件孔12a，12b中形成栅极氧化膜。 当氧化物膜14a，14b用作栅极氧化膜时，通过在除去抗蚀剂层16之后的蚀刻使氧化物膜14a，14b变薄，然后氧化膜14a，14b变厚。 对应于14a的栅极氧化膜通过形成离子注入层18变得比对应于14b的栅极氧化膜更厚。（C）2006，JPO和NCIPI

公开(公告)号：JP2006019413A

公开(公告)日：2006-01-19

申请号：JP2004194233

申请日：2004-06-30

申请人： Canon Inc ,  キヤノン株式会社

发明人： FUKUCHI YUSUKE

IPC分类号： H01L21/316 ,  H01L21/31

CPC分类号： H01L21/02238 ,  H01J37/32192 ,  H01L21/02252 ,  H01L21/0234 ,  H01L21/28194 ,  H01L21/31662

摘要： PROBLEM TO BE SOLVED: To provide a processing method and a processor for forming a reliable insulating film without much damage in the film with a high throughput.
SOLUTION: The processing method for forming an oxide film by oxidizing an object to be treated exposed on the surface of a substrate 102 by plasma P comprises a first process for forming an oxide film having a film thickness in a desired range by oxidizing the object to be treated by oxidation species containing ions in the plasma P; and a second process for performing treatment by neutral radical specifies by controlling the amount of arrival to the object to be treated in ions in plasma.
COPYRIGHT: (C)2006,JPO&NCIPI

摘要翻译： 要解决的问题：提供一种处理方法和处理器，用于形成可靠的绝缘膜，而不会在膜中产生大量的生产率。 解决方案：通过用等离子体P氧化在基板102的表面上暴露的待处理物体来形成氧化膜的处理方法包括：通过氧化形成具有所需范围的膜厚度的氧化膜的第一工艺 在等离子体P中含有离子的氧化物质待处理的物体; 并且用于通过中性自由基执行治疗的第二过程通过控制等离子体中的待处理物体的到达量来指定。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005311301A

公开(公告)日：2005-11-04

申请号：JP2005032341

申请日：2005-02-08

申请人： Tokyo Electron Ltd ,  東京エレクトロン株式会社

发明人： SUZUKI KEISUKE ,  IKEUCHI TOSHIYUKI ,  AOKI KIMIYA

IPC分类号： H01L21/31 ,  C23C8/12 ,  C23C8/16 ,  C23C16/00 ,  H01L21/316 ,  H01L21/469

CPC分类号： C23C8/12 ,  C23C8/16 ,  H01L21/02164 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662

摘要： PROBLEM TO BE SOLVED: To provide an oxidizing method of a workpiece which can selectively oxidize a surface of different material sufficiently exposing on a surface, and moreover can keep uniformity in the film thickness high among the films.
SOLUTION: In the oxidizing method of selectively oxidizing the surface of the workpiece in an atmosphere, having oxygen active species and hydroxyl group active species which are generated by supplying an oxidizing gas and a reducing gas in a treatment vessel 22, and by reacting both the gases in such a manner that a plurality of workpiece W, in which silicon layer and silicon nitride layer are exposed on the surface, are accommodated in the treatment vessel 22, which has a designated length and can execute vacuum processing. The oxidizing gas and reducing gas are supplied from one end side of the treatment vessel in the longitudinal direction, and the oxidizing gas is further supplied in auxiliary, at a partway location of the treatment vessel in the longitudinal direction.
COPYRIGHT: (C)2006,JPO&NCIPI

摘要翻译： 要解决的问题：提供能够选择性地氧化表面上充分暴露的不同材料的表面的工件的氧化方法，并且还可以使膜中的膜厚度均匀化。 解决方案：在气氛中选择性氧化工件表面的氧化方法中，具有通过在处理容器22中供应氧化气体和还原气体而产生的氧活性种类和羟基活性物质，以及由 使两种气体以使得表面上露出硅层和氮化硅层的多个工件W容纳在具有指定长度并可执行真空处理的处理容器22中。 从处理容器的长度方向的一端侧供给氧化气体和还原气体，在处理容器的长度方向的中途位置进一步供给氧化气体。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005244176A

公开(公告)日：2005-09-08

申请号：JP2004370804

申请日：2004-12-22

申请人： Hynix Semiconductor Inc ,  株式会社ハイニックスセミコンダクター

发明人： SHIN SHIYOUYU

IPC分类号： H01L21/316 ,  H01L21/00 ,  H01L21/28 ,  H01L21/283 ,  H01L21/31 ,  H01L21/314 ,  H01L21/469 ,  H01L21/8247 ,  H01L21/84 ,  H01L27/115 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L21/02238 ,  H01L21/02255 ,  H01L21/02337 ,  H01L21/28273 ,  H01L21/31662

摘要： PROBLEM TO BE SOLVED: To provide an oxide film formation method for a semiconductor element capable of reducing the density of interface trap charge and oxide trap charge.
SOLUTION: An oxide film formation method for the semiconductor element comprises: a stage for providing a silicon substrate wherein a natural oxide film is removed; a stage for performing an oxidizing process to form an oxide film on the silicon substrate; and a stage for performing a high-temperature heat treatment process under a mixed gas atmosphere of inert gas and oxygen gas in order to reduce trap charge existing in the oxide film.
COPYRIGHT: (C)2005,JPO&NCIPI

摘要翻译： 要解决的问题：提供能够降低界面陷阱电荷和氧化物阱电荷的密度的半导体元件的氧化膜形成方法。 解决方案：用于半导体元件的氧化膜形成方法包括：用于提供硅衬底的级，其中除去天然氧化物膜; 用于在硅衬底上进行氧化处理以形成氧化膜的阶段; 以及在惰性气体和氧气的混合气体气氛下进行高温热处理工序的阶段，以减少氧化膜中存在的阱电荷。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005150637A

公开(公告)日：2005-06-09

申请号：JP2003389876

申请日：2003-11-19

申请人： Canon Inc ,  キヤノン株式会社

发明人： FUKUCHI YUSUKE

IPC分类号： H01L21/318 ,  C23C8/34 ,  C23C8/36 ,  H01L21/28 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L29/51 ,  H01L29/78

CPC分类号： H01L21/28185 ,  C23C8/34 ,  C23C8/36 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/31662 ,  H01L29/518

摘要： PROBLEM TO BE SOLVED: To provide a treatment method and apparatus for forming a highly reliable insulating film by a method not dependent on high temperature heating.
SOLUTION: This treatment method forms an insulating film on the surface of a substrate to be treated according to oxidizing and nitriding treatment and comprises steps of nitriding the surface of the substrate to be treated by irradiating the substrate to be treated with plasma containing nitrogen atoms, and oxidizing the nitrided surface of the substrate to be treated by irradiating the nitrided surface with plasma containing oxygen atoms.
COPYRIGHT: (C)2005,JPO&NCIPI

摘要翻译： 要解决的问题：提供一种通过不依赖于高温加热的方法形成高可靠性绝缘膜的处理方法和装置。 解决方案：该处理方法根据氧化和氮化处理在待处理基板的表面上形成绝缘膜，包括以下步骤：通过用含有等离子体的等离子体照射待处理的基板来对待处理的基板的表面进行氮化 氮原子，并且通过用包含氧原子的等离子体照射氮化表面来氧化待处理的衬底的氮化表面。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005019944A

公开(公告)日：2005-01-20

申请号：JP2003413088

申请日：2003-12-11

申请人： Hynix Semiconductor Inc ,  株式会社ハイニックスセミコンダクター

发明人： LEE SEUNG-CHEOL ,  BOKU SOUKU

IPC分类号： H01L21/8234 ,  H01L21/02 ,  H01L21/28 ,  H01L21/302 ,  H01L21/31 ,  H01L21/311 ,  H01L21/316 ,  H01L21/336 ,  H01L21/8247 ,  H01L27/088 ,  H01L27/10 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L27/11546 ,  H01L21/0206 ,  H01L21/28273 ,  H01L21/31111 ,  H01L21/31662 ,  H01L27/11526 ,  H01L27/11543

摘要： PROBLEM TO BE SOLVED: To provide a method of forming a tunnel oxide film in a semiconductor device in which a predetermined thickness of the oxide film is not removed during a process of removing the oxide film in a memory cell area and a low voltage transistor area after a gate oxide film for a high voltage transistor is formed, thereby preventing increase of surface toughness on a substrate and contamination caused by absorbed carbon components generated when the oxide films and the photo resist film are removed.
SOLUTION: The method of forming a tunnel oxide film in a semiconductor device includes the steps of: forming a first oxide film 12 on a semiconductor substrate 11, and then forming a photo resist pattern 13 exposing the first oxide film 12 in the memory cell area and the low voltage transistor area; removing a predetermined thickness of the exposed first oxide film 12 and the photo resist pattern 13 sequentially; and removing the remaining first oxide film 12 completely and then forming a second oxide film 14 on a whole surface.
COPYRIGHT: (C)2005,JPO&NCIPI

摘要翻译： 要解决的问题：提供一种在半导体器件中形成隧道氧化膜的方法，其中在去除存储器单元区域中的氧化物膜的过程中未除去预定厚度的氧化膜，并且低 形成用于高电压晶体管的栅极氧化膜之后的高压晶体管区域，从而防止了衬底上的表面韧性增加以及当去除氧化物膜和光致抗蚀剂膜时产生的被吸收的碳成分引起的污染。 解决方案：在半导体器件中形成隧道氧化膜的方法包括以下步骤：在半导体衬底11上形成第一氧化物膜12，然后形成曝光第一氧化膜12的光致抗蚀剂图案13 存储单元面积和低压晶体管面积; 依次去除暴露的第一氧化膜12和光刻胶图案13的预定厚度; 并且完全除去剩余的第一氧化膜12，然后在整个表面上形成第二氧化物膜14。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004265916A

公开(公告)日：2004-09-24

申请号：JP2003029529

申请日：2003-02-06

申请人： Tokyo Electron Ltd ,  東京エレクトロン株式会社

发明人： KITAGAWA JUNICHI

IPC分类号： H05H1/46 ,  C30B33/00 ,  H01L21/316

CPC分类号： H01L21/02238 ,  C30B33/005 ,  H01L21/02252 ,  H01L21/31662

摘要： PROBLEM TO BE SOLVED: To restrain a formed oxide film from deteriorating in characteristics in a plasma oxidation treatment method for subjecting a substrate to a plasma oxidation treatment. SOLUTION: In the plasma oxidation treatment method for subjecting a substrate to a plasma oxidation treatment, inert gas used for generating plasma is so selected as to enable the wavelength of plasma emission light to be in a prescribed range. The wavelength of plasma emission light is set, for instance, in the range of 500 to 600 Å. COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2004260182A

公开(公告)日：2004-09-16

申请号：JP2004048830

申请日：2004-02-24

申请人： Sharp Corp ,  シャープ株式会社

发明人： ONO YOSHI

IPC分类号： H01L21/316

CPC分类号： H01L21/02238 ,  H01L21/02255 ,  H01L21/31662

摘要： PROBLEM TO BE SOLVED: To provide an oxidation method of silicon using oxygen (
1 D).
SOLUTION: A low temperature oxidation method of a silicon substrate includes a process to arrange a silicon wafer in a vacuum chamber, a process to keep the silicon wafer at a temperature between about 25°C to about 600°C, a process to lead N
2 O gas into the vacuum chamber, a process to dissociate the N
2 O gas to the oxygen (
1 D) using a xenon laser which emits light at a wavelength of about 172 nm and to flow the oxygen (
1 D) to the silicon wafer, and a process to form an oxide layer on at least a part of the silicon wafer.
COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2004253777A

公开(公告)日：2004-09-09

申请号：JP2003408813

申请日：2003-12-08

申请人： Nec Electronics Corp ,  Necエレクトロニクス株式会社

发明人： HASEGAWA EIJI

IPC分类号： H01L21/318 ,  H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L29/51 ,  H01L29/78

CPC分类号： H01L21/28185 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02323 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/31662 ,  H01L29/513 ,  H01L29/518

摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a MOS type transistor capable of realizing a high-speed device, by reducing the diffusion of nitrogen into an interface of a silicon substrate due to the redistribution of the nitrogen, and furthermore, by suppressing the diffusion into an interface of a polysilicon hindering the speed-up of a transistor. SOLUTION: A manufacturing method of a semiconductor device comprise a step for forming an oxide film 2 on a semiconductor substrate 1, a step for introducing nitrogen in the oxide film, and an oxidation heat treatment process d for heating the oxide film in an oxygen-containing gas atmosphere. A heat treatment temperature of the process d is higher than that of all processes after the process d. After a nitriding process c for introducing the oxide film 2, the heat treatment is performed at a higher temperature than that of all heat treatments f performed thereafter and in an oxidizing atmosphere selecting an atmosphere for suppressing film thickness or sublimation. Consequently, an interstitial or excess nitrogen is redistributed/desorbed. Thus, nitriding of a silicon substrate or nitriding of a polysilicon electrode can be suppressed. COPYRIGHT: (C)2004,JPO&NCIPI