Dielectric material for a plasma display panel

    公开(公告)号:JP5370909B2

    公开(公告)日:2013-12-18

    申请号:JP2008245087

    申请日:2008-09-25

    CPC classification number: H01J11/38 C03C3/066 C03C4/16 C03C12/00 H01J11/12

    Abstract: A dielectric material for plasma display panels which comprises a ZnO-B2O3-SiO2-Bi2O3-R2O lead-free glass powder and which, despite this, gives a highly transparent dielectric layer on a glass substrate having a silver electrode formed thereon. The dielectric layer is less apt to have yellowed and has a coefficient of thermal expansion compatible with the glass substrate. The dielectric material can be burned at 600°C or lower. Also provided are: a method of forming a dielectric layer; a dielectric layer formed from the dielectric material; and a glass plate for plasma display panels which has the dielectric layer. The dielectric material for plasma display panels comprises a glass powder based on ZnO-B2O3-SiO2-Bi2O3-R2O (wherein R2O represents alkali metal oxides comprising Li2O, Na2O, and K2O). It is characterized in that the glass powder contains substantially no PbO and is made of a glass which comprises, in terms of percentage by mass, 45-85% ZnO+B2O3+SiO2, 10-25% Bi2O3, 0.1-10% R2O, and 0.01-0.30% CoO, the R2O/Bi2O3 ratio being 0.05-0.80 by mass.

    The method of manufacturing the ion source, and ion sources produced by this method

    公开(公告)号:JP5341562B2

    公开(公告)日:2013-11-13

    申请号:JP2009050671

    申请日:2009-03-04

    Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing an ion source that facilitates positioning an field ionization electrode toward the opening hole periphery of a vessel, and to provide an ion source manufactured by the method. SOLUTION: The method of manufacturing the ion source includes a step of preparing a field ionization electrode 23 with a sacrifice layer 60, a step of positioning the electrode 23 with the sacrifice layer 60 attached to a vessel 20, a step of fixing the electrode 23 to the vessel 20, and a step of removing the sacrifice layer 60 from the electrode 23, wherein the sacrifice layer 60 is composed of a protection layer 62 and an outer layer 64, the protection layer 62 is made of a silicon oxide, the outer layer 64 is made of a material capable of being removed by a means having less influence on a micro opening hole periphery 21r than a means removing the protection layer 62 with a hydrofluoric acid and/or an ammonium fluoride aqueous solution, and in the step of removing the layer, the outer layer 64 and the protection layer 62 are removed in order. COPYRIGHT: (C)2010,JPO&INPIT

    Magnesium oxide thin film and method for producing the same
    67.
    发明专利
    Magnesium oxide thin film and method for producing the same 有权
    氧化镁薄膜及其制造方法

    公开(公告)号:JP2013180942A

    公开(公告)日:2013-09-12

    申请号:JP2012047615

    申请日:2012-03-05

    Abstract: PROBLEM TO BE SOLVED: To provide a magnesium oxide thin film capable of showing equivalent properties in comparison with a thin film produced by an electron beam deposition method, without requiring a film formation process under vacuum.SOLUTION: In a magnesium oxide thin film, triangular fine particles are formed on the surface in an electron micrograph photographed from above. The thin film is formed on a substrate at a growth rate of 10-25 nm/min by atomizing magnesium oxide raw material solution, followed by thermal decomposition of the generated misty magnesium oxide raw material on the substrate.

    Abstract translation: 要解决的问题:提供一种与通过电子束沉积方法制造的薄膜相比具有等同性能的氧化镁薄膜,而不需要在真空下进行成膜工艺。解决方案:在氧化镁薄膜中,三角形 在从上方拍摄的电子显微镜照片中的表面上形成微粒。 通过雾化氧化镁原料溶液,以10-25nm / min的生长速度在基板上形成薄膜,然后在基板上热分解产生的雾状氧化镁原料。

    Short circuit removal method of the cathode substrate.

    公开(公告)号:JP5276768B2

    公开(公告)日:2013-08-28

    申请号:JP2005209637

    申请日:2005-07-20

    CPC classification number: Y02W30/828

    Abstract: PROBLEM TO BE SOLVED: To solve problems of conventional cathode substrate short-circuit removing method in which the heat generated when removing short-circuited part is transmitted to peripheral part thereof and the cathode substrate is cracked by the temperature increase by itself and an emitter material constituting an electron emission part is damaged by the heat. SOLUTION: When a part between a cathode electrode 22 of the electron emission part 25 and a gate electrode layer is in a state of short-circuit, a voltage is impressed between the cathode electrode 22 of the cathode substrate 21 and the gate electrode 24, and the short-circuited part is removed by the heat generated by the current flowing through the short-circuited part, at that time, the current is a pulse current. COPYRIGHT: (C)2007,JPO&INPIT

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