Anisotropic conductive connector positioning method, positioning method for anisotropic conductive connector and inspection circuit board, anisotropic conductive connector, and probe card
    1.
    发明专利
    Anisotropic conductive connector positioning method, positioning method for anisotropic conductive connector and inspection circuit board, anisotropic conductive connector, and probe card 审中-公开
    各向异性导电连接器定位方法,用于各向异性导电连接器和检查电路板的定位方法,各向异性导电连接器和探针卡

    公开(公告)号:JP2009019974A

    公开(公告)日:2009-01-29

    申请号:JP2007182357

    申请日:2007-07-11

    Abstract: PROBLEM TO BE SOLVED: To provide a positioning method which can perform positioning of components of a three-layered rectangular-frame-shaped anisotropic conductive connector surely and easily. SOLUTION: The three-layered anisotropic conductive sheet for inspecting the electric characteristics of an object under inspection is composed of a first anisotropic conductive sheet 18, a central substrate 16, and a second anisotropic conductive sheet 20. The central substrate 16 is provided with markings 76, 77 and through holes 74, 75. The first anisotropic conductive sheet and the second anisotropic conductive sheet are provided with semitransparent protrusions 71, 72, 49, 78 and through holes 70, 80, respectively. The markings are identified by detecting means 81, 83 provided on the first anisotropic conductive sheet side and detecting means provided on the second anisotropic conductive sheet side through the semitransparent protrusions to position the semitransparent protrusions 71, 49 with respect to the markings 76, 77, thereby performing positioning of the first anisotropic conductive sheet, the central substrate, and the second anisotropic conductive sheet. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题:提供一种可以确实且容易地进行三层矩形框状的各向异性导电连接器的部件的定位的定位方法。 解决方案:用于检查被检查物体的电特性的三层各向异性导电片由第一各向异性导电片18,中心基板16和第二各向异性导电片20构成。中心基板16为 设置有标记76,77和通孔74,75.第一各向异性导电片和第二各向异性导电片分别设置有半透明突起71,72,49,78和通孔70,80。 通过设置在第一各向异性导电片侧的检测装置81,83和通过半透明突起设置在第二各向异性导电片侧的检测装置来标识标记,以相对于标记76,77定位半透明突起71,49, 从而进行第一各向异性导电片,中央基板和第二各向异性导电片的定位。 版权所有(C)2009,JPO&INPIT

    Probe
    2.
    发明专利
    Probe 审中-公开
    探测

    公开(公告)号:JP2006132982A

    公开(公告)日:2006-05-25

    申请号:JP2004319661

    申请日:2004-11-02

    CPC classification number: G01R1/06727 G01R1/07342

    Abstract: PROBLEM TO BE SOLVED: To provide a probe capable of preventing a beam part from being damaged and deformed, by dispersing the stresses exerted on the beam part, when the probe is pressed down. SOLUTION: The beam part 3 is supported at a probe substrate 1 at one end by a support part 2 at a prescribed interval. The beam part 3 is provided with a contact 4 extended in the direction away from the probe substrate 1. The beam part 3 is provided with a protrusion 5 facing and extending toward the probe substrate 1. Since the protrusion 5 comes into contact with the probe substrate 1, when a load is placed on the probe substrate 1, it is possible to disperse stress exerted on the beam part 3. COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题:通过分散施加在梁部上的应力,提供一种能够防止梁部被损坏和变形的探针,当探针被按下时。 解决方案:梁部分3在探针基板1的一端以规定的间隔由支撑部分2支撑。 梁部3设置有沿远离探针基板1的方向延伸的接触件4.梁部3设置有面向并朝向探针基板1延伸的突起5.由于突起5与探针接触 基板1,当将负载放置在探针基板1上时,可以分散施加在光束部分3上的应力。版权所有(C)2006,JPO&NCIPI

    Interposer and its manufacturing method
    3.
    发明专利
    Interposer and its manufacturing method 有权
    插件及其制造方法

    公开(公告)号:JP2006024649A

    公开(公告)日:2006-01-26

    申请号:JP2004199785

    申请日:2004-07-06

    CPC classification number: H01L2924/0002 H01L2924/00

    Abstract: PROBLEM TO BE SOLVED: To provide an interposer manufacturing method which can manufacture an interposer by a simple manufacturing process without generating any cavity inside a through hole. SOLUTION: In the manufacturing method of the interpose, a seed layer 14 is first formed in an opening of the through hole 13 in the rear surface 12 side of a substrate 10. With the seed layer 14 as a base, an electrode layer 15 for plating is formed. From the electrode layer 15 for plating, a plating layer 16 is formed toward the front surface 11 side of the substrate 10 to fill up the through hole 13 with it. COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题:提供一种通过简单制造工艺制造插入件而不在通孔内产生任何空腔的插入件制造方法。 解决方案:在插入的制造方法中,首先在基板10的后表面12侧的通孔13的开口中形成种子层14.以种子层14为基底, 形成用于电镀的层15。 从用于电镀的电极层15向衬底10的前表面11侧形成镀层16,以填充通孔13。 版权所有(C)2006,JPO&NCIPI

    基板の処理方法及びテンプレート
    4.
    发明专利
    基板の処理方法及びテンプレート 有权
    基板和模板的处理方法

    公开(公告)号:JP2014227556A

    公开(公告)日:2014-12-08

    申请号:JP2013106074

    申请日:2013-05-20

    Abstract: 【課題】基板の処理領域に処理液を供給し、当該処理液中の被処理イオンを用いて、基板に対する所定の処理を効率よく且つ適切に行う。【解決手段】めっき液Mを流通させる流通路21と、流通路21の内部に露出して設けられた直接電極22と、流通路21との間に絶縁材24を介して設けられた間接電極23とを備えたテンプレート20を、直接電極22と間接電極23に共通する対向電極12が貫通孔11に設けられたウェハ10に対向して配置する。流通路21を介して貫通孔11にめっき液Mを供給する。間接電極23と対向電極12との間に電圧を印加し、銅イオンCを対向電極12側に移動させると共に、直接電極22と対向電極12との間に電圧を印加し、対向電極12側に移動した銅イオンCを還元して、ウェハ10にめっき処理を行う。【選択図】図6

    Abstract translation: 要解决的问题:通过向基板的处理区域提供处理液并且使用处理液中的待处理离子来有效且适当地执行基板的规定处理。解模:模板20包括:流路 21使电镀液M循环; 安装成暴露于流路21的内部的直接电极22; 并且通过绝缘材料24沿着流路21安装的间接电极23与具有与直电极22和间接电极23相同的对置电极12的晶片10相对放置并安装在通孔11中。电镀 溶液M经由流路21供给到贯通孔11.通过在间接电极23和对电极12之间施加电压,在晶片10上进行电镀处理,使铜离子C向 对电极12,同时在直电极22和对电极12之间施加电压,以便减少移动到对电极12一侧的铜离子C.

    Probe and its manufacturing method
    5.
    发明专利
    Probe and its manufacturing method 有权
    探索及其制造方法

    公开(公告)号:JP2006300617A

    公开(公告)日:2006-11-02

    申请号:JP2005120208

    申请日:2005-04-18

    CPC classification number: G01R1/06711 G01R3/00

    Abstract: PROBLEM TO BE SOLVED: To provide a probe and its manufacturing method capable of surely contacting with electrodes arranged with a small pitch by making a contactor small while keeping strength. SOLUTION: The probe 10 is constituted such that the beam 11 is formed with support 12 and the column 13 bent in L of flat surface shape, and at the end of the column 13 a contactor 14 is provided, extending toward the same direction as the direction of the column 13. Both the support 12 and the column 13 are formed with e.g. approximately uniform thickness of nickel or nickel alloy of 70-80 μm, and the contactor 14 is thinner than the beam 11 of approximately uniform thickness of 10-20 μm thick nickel or nickel alloy. The tip of the contactor 14 is formed in a point. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题:提供一种探针及其制造方法,其能够通过在保持强度的同时使接触器小而能够与以小间距布置的电极接触。 解决方案:探针10被构造成使得梁11形成有支撑体12,并且柱13弯曲成平坦的表面形状的L,并且在柱13的端部处设置有接触器14,朝向其延伸 方向作为柱13的方向。支撑体12和柱13都形成为例如 大约均匀的镍或镍合金的厚度为70-80μm,而接触器14的厚度大约为10-20微米厚的镍或镍合金厚度的梁11。 接触器14的尖端形成一点。 版权所有(C)2007,JPO&INPIT

    Probe and its manufacturing method
    6.
    发明专利
    Probe and its manufacturing method 审中-公开
    探索及其制造方法

    公开(公告)号:JP2006119024A

    公开(公告)日:2006-05-11

    申请号:JP2004308132

    申请日:2004-10-22

    CPC classification number: G01R1/06733 G01R1/07342 G01R3/00

    Abstract: PROBLEM TO BE SOLVED: To provide a probe contactable surely with an electrode pad arrayed with a narrow pitch, and its manufacturing method.
    SOLUTION: A probe needle 20 includes a cantilever 21, a columnar part 22 and a top part 23. The columnar part 22 is formed so as to be supported in an open-sided shape on one end of the cantilever 21, and the top part 23 is formed on the tip of the columnar part 22. The height of the columnar part 22 is higher than the height of the top part 23, and the height of the columnar part 22 and the top part 23 is selected to be double or more compared with the width.
    COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题:提供可靠地与窄间距排列的电极焊盘接触的探针及其制造方法。 探针20包括悬臂21,柱状部分22和顶部23.柱状部分22形成为在悬臂21的一端上以开放方式支撑,并且 顶部23形成在柱状部22的前端。柱状部22的高度高于顶部23的高度,柱状部22和顶部23的高度选择为 双倍或更多比较宽。 版权所有(C)2006,JPO&NCIPI

    Method and device for forming insulating film

    公开(公告)号:JP2004158793A

    公开(公告)日:2004-06-03

    申请号:JP2002325375

    申请日:2002-11-08

    Abstract: PROBLEM TO BE SOLVED: To provide a method and a device by which an insulating film having good characteristics and high porosity can be formed.
    SOLUTION: At the time of forming the insulating film by a plasma CVD using 1, 3, 5-trimethyl-1, 3, 5-trivinyl siloxane (V3D3) and isopropyl alcohol (IPA) as the start materials, a high-frequency bias voltage is impressed to the plasma. When the bias voltage is impressed, an SiOC film having a siloxane structure fetching IPS fragments in a loosely coupled state is formed by efficiently attracting particles contained in the plasma to a wafer W side. Since the fragments etc., in the film thus formed are coupled with each other with low energy, they are eliminated easily by annealing and pores can be formed in the film while the basic skeleton of the film is maintained.
    COPYRIGHT: (C)2004,JPO

    Wiring board for semiconductor device inspection apparatus and manufacturing method therefor
    8.
    发明专利
    Wiring board for semiconductor device inspection apparatus and manufacturing method therefor 审中-公开
    半导体器件检测装置接线板及其制造方法

    公开(公告)号:JP2013168400A

    公开(公告)日:2013-08-29

    申请号:JP2012029217

    申请日:2012-02-14

    Abstract: PROBLEM TO BE SOLVED: To provide a wiring board for semiconductor device inspection apparatus having a low coefficient of thermal expansion and a high mechanical strength, which can be manufactured easily while reducing the manufacturing cost, and to provide a manufacturing method therefor.SOLUTION: The wiring board for semiconductor device inspection apparatus includes a metal base material obtained by laminating metal plate materials, each having a plurality of through-holes formed at predetermined parts by etching, so that the positions of the through-holes overlap and then affixing the metal plate materials, a resin layer placed on the surface of the metal base material and on the inner wall of the through-holes, and a conductor pattern disposed while being insulated electrically from the metal base material by the resin layer.

    Abstract translation: 要解决的问题:提供一种具有低热膨胀系数和高机械强度的半导体器件检查装置的布线板,其可以在降低制造成本的同时容易地制造,并提供其制造方法。解决方案: 半导体装置检查装置用布线基板包括金属基材,其通过层压金属板材料而得到,每个金属板材具有通过蚀刻在预定部分形成的多个通孔,使得通孔的位置重叠,然后将金属板 材料,设置在金属基材表面上的树脂层和通孔的内壁,以及通过树脂层与金属基材电绝缘而设置的导体图案。

    Diaphragm-type gas pressure gauge and its manufacturing method
    9.
    发明专利
    Diaphragm-type gas pressure gauge and its manufacturing method 审中-公开
    气压式气压计及其制造方法

    公开(公告)号:JP2008151686A

    公开(公告)日:2008-07-03

    申请号:JP2006341028

    申请日:2006-12-19

    Abstract: PROBLEM TO BE SOLVED: To provide a compact diaphragm-type gas pressure gauge having high reliability.
    SOLUTION: The diaphragm-type gas pressure gauge includes: a reference chamber 11 closed to be formed on a support layer 23 under a buried oxidation film layer 22 of an SOI wafer 20 by leaving an active layer 21 and the buried oxidation film layer 22 of the SOI wafer 20; and a diaphragm 12 composed of the active layer 21 of the SOI wafer 20 left on the reference chamber 11 and the buried oxidation film layer 23. In particular, in the inside of the reference chamber 11, the pressure gauge is provided with an etching stopper 25 being the etching stopper when etching the support layer 23 of the SOI wafer 20. In addition, the pressure gauge includes an introduction opening 26 for introducing an etching gas for forming the reference chamber 11 by etching the support layer 23 of the SOI wafer 20 and a sealing 27 blocking the introduction opening 26 on a part of the diaphragm 12. The introduction opening 26 may form on the surface of the side of the support layer 23 of the SOI wafer 20.
    COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题:提供具有高可靠性的紧凑型隔膜式气体压力计。 解决方案:隔膜式气体压力计包括:基准室11,其通过留下有源层21和埋入氧化膜而封闭形成在SOI晶片20的埋置氧化膜层22下的支撑层23上 SOI晶片20的层22; 以及由留在基准室11上的SOI晶片20的有源层21和掩埋氧化膜层23构成的​​隔膜12。特别地,在基准室11的内部设置有蚀刻阻挡层 25是蚀刻SOI晶片20的支撑层23时的蚀刻停止体。此外,压力计包括用于通过蚀刻SOI晶片20的支撑层23引入用于形成基准室11的蚀刻气体的引入开口26 以及封闭隔膜12的一部分上的引入开口26的密封件27.导入开口26可以形成在SOI晶片20的支撑层23侧的表面上。(C)2008, JPO&INPIT

    Vaporizing device and treatment apparatus
    10.
    发明专利
    Vaporizing device and treatment apparatus 有权
    蒸发装置和处理装置

    公开(公告)号:JP2006193801A

    公开(公告)日:2006-07-27

    申请号:JP2005008429

    申请日:2005-01-14

    CPC classification number: C23C16/4482 C23C16/18

    Abstract: PROBLEM TO BE SOLVED: To provide a vaporizing device which reliably vaporizes a raw liquid material remaining inside it and thereby prevents the liquid material from remaining therein.
    SOLUTION: The vaporizing device for vaporizing the forcibly-fed raw liquid material in a reduced pressure atmosphere and transporting a generated source gas with the carrier gas to the outside comprises: a liquid storage chamber 70 for temporarily storing the forcibly-fed raw liquid material; a vaporizing chamber 62 communicating with the liquid storage chamber through a valve port 66; a valve element 72 placed so as to be able to sit on a valve seat for partitioning the valve port from the liquid storage chamber; an actuator means 81 for driving the valve element; a carrier gas introduction means 90 having a carrier gas injection port 92 placed in the valve element so as to lead to the valve port; and an exhaust port 28 for exhausting the source gas in the vaporizing chamber to the outside.
    COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题:提供一种可靠地蒸发残留在其内部的原料液体的蒸发装置,从而防止液体材料残留在其中。 解决方案:用于在减压气氛中蒸发强制供给的原料液体并将载气产生的源气体输送到外部的蒸发装置包括:液体储存室70,用于临时存储被强制供给的原料 液体材料; 通过阀口66与液体储存室连通的汽化室62; 阀元件72,其被配置为能够坐在阀座上,用于将阀口与液体储存室隔开; 用于驱动阀元件的致动器装置81; 载气引入装置90,其具有放置在阀元件中的载气注入口92,以便通向阀口; 以及用于将蒸发室中的源气体排出到外部的排气口28。 版权所有(C)2006,JPO&NCIPI

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