Abstract:
PROBLEM TO BE SOLVED: To provide a positioning method which can perform positioning of components of a three-layered rectangular-frame-shaped anisotropic conductive connector surely and easily. SOLUTION: The three-layered anisotropic conductive sheet for inspecting the electric characteristics of an object under inspection is composed of a first anisotropic conductive sheet 18, a central substrate 16, and a second anisotropic conductive sheet 20. The central substrate 16 is provided with markings 76, 77 and through holes 74, 75. The first anisotropic conductive sheet and the second anisotropic conductive sheet are provided with semitransparent protrusions 71, 72, 49, 78 and through holes 70, 80, respectively. The markings are identified by detecting means 81, 83 provided on the first anisotropic conductive sheet side and detecting means provided on the second anisotropic conductive sheet side through the semitransparent protrusions to position the semitransparent protrusions 71, 49 with respect to the markings 76, 77, thereby performing positioning of the first anisotropic conductive sheet, the central substrate, and the second anisotropic conductive sheet. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a probe capable of preventing a beam part from being damaged and deformed, by dispersing the stresses exerted on the beam part, when the probe is pressed down. SOLUTION: The beam part 3 is supported at a probe substrate 1 at one end by a support part 2 at a prescribed interval. The beam part 3 is provided with a contact 4 extended in the direction away from the probe substrate 1. The beam part 3 is provided with a protrusion 5 facing and extending toward the probe substrate 1. Since the protrusion 5 comes into contact with the probe substrate 1, when a load is placed on the probe substrate 1, it is possible to disperse stress exerted on the beam part 3. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide an interposer manufacturing method which can manufacture an interposer by a simple manufacturing process without generating any cavity inside a through hole. SOLUTION: In the manufacturing method of the interpose, a seed layer 14 is first formed in an opening of the through hole 13 in the rear surface 12 side of a substrate 10. With the seed layer 14 as a base, an electrode layer 15 for plating is formed. From the electrode layer 15 for plating, a plating layer 16 is formed toward the front surface 11 side of the substrate 10 to fill up the through hole 13 with it. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a probe and its manufacturing method capable of surely contacting with electrodes arranged with a small pitch by making a contactor small while keeping strength. SOLUTION: The probe 10 is constituted such that the beam 11 is formed with support 12 and the column 13 bent in L of flat surface shape, and at the end of the column 13 a contactor 14 is provided, extending toward the same direction as the direction of the column 13. Both the support 12 and the column 13 are formed with e.g. approximately uniform thickness of nickel or nickel alloy of 70-80 μm, and the contactor 14 is thinner than the beam 11 of approximately uniform thickness of 10-20 μm thick nickel or nickel alloy. The tip of the contactor 14 is formed in a point. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a probe contactable surely with an electrode pad arrayed with a narrow pitch, and its manufacturing method. SOLUTION: A probe needle 20 includes a cantilever 21, a columnar part 22 and a top part 23. The columnar part 22 is formed so as to be supported in an open-sided shape on one end of the cantilever 21, and the top part 23 is formed on the tip of the columnar part 22. The height of the columnar part 22 is higher than the height of the top part 23, and the height of the columnar part 22 and the top part 23 is selected to be double or more compared with the width. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a method and a device by which an insulating film having good characteristics and high porosity can be formed. SOLUTION: At the time of forming the insulating film by a plasma CVD using 1, 3, 5-trimethyl-1, 3, 5-trivinyl siloxane (V3D3) and isopropyl alcohol (IPA) as the start materials, a high-frequency bias voltage is impressed to the plasma. When the bias voltage is impressed, an SiOC film having a siloxane structure fetching IPS fragments in a loosely coupled state is formed by efficiently attracting particles contained in the plasma to a wafer W side. Since the fragments etc., in the film thus formed are coupled with each other with low energy, they are eliminated easily by annealing and pores can be formed in the film while the basic skeleton of the film is maintained. COPYRIGHT: (C)2004,JPO
Abstract:
PROBLEM TO BE SOLVED: To provide a wiring board for semiconductor device inspection apparatus having a low coefficient of thermal expansion and a high mechanical strength, which can be manufactured easily while reducing the manufacturing cost, and to provide a manufacturing method therefor.SOLUTION: The wiring board for semiconductor device inspection apparatus includes a metal base material obtained by laminating metal plate materials, each having a plurality of through-holes formed at predetermined parts by etching, so that the positions of the through-holes overlap and then affixing the metal plate materials, a resin layer placed on the surface of the metal base material and on the inner wall of the through-holes, and a conductor pattern disposed while being insulated electrically from the metal base material by the resin layer.
Abstract:
PROBLEM TO BE SOLVED: To provide a compact diaphragm-type gas pressure gauge having high reliability. SOLUTION: The diaphragm-type gas pressure gauge includes: a reference chamber 11 closed to be formed on a support layer 23 under a buried oxidation film layer 22 of an SOI wafer 20 by leaving an active layer 21 and the buried oxidation film layer 22 of the SOI wafer 20; and a diaphragm 12 composed of the active layer 21 of the SOI wafer 20 left on the reference chamber 11 and the buried oxidation film layer 23. In particular, in the inside of the reference chamber 11, the pressure gauge is provided with an etching stopper 25 being the etching stopper when etching the support layer 23 of the SOI wafer 20. In addition, the pressure gauge includes an introduction opening 26 for introducing an etching gas for forming the reference chamber 11 by etching the support layer 23 of the SOI wafer 20 and a sealing 27 blocking the introduction opening 26 on a part of the diaphragm 12. The introduction opening 26 may form on the surface of the side of the support layer 23 of the SOI wafer 20. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a vaporizing device which reliably vaporizes a raw liquid material remaining inside it and thereby prevents the liquid material from remaining therein. SOLUTION: The vaporizing device for vaporizing the forcibly-fed raw liquid material in a reduced pressure atmosphere and transporting a generated source gas with the carrier gas to the outside comprises: a liquid storage chamber 70 for temporarily storing the forcibly-fed raw liquid material; a vaporizing chamber 62 communicating with the liquid storage chamber through a valve port 66; a valve element 72 placed so as to be able to sit on a valve seat for partitioning the valve port from the liquid storage chamber; an actuator means 81 for driving the valve element; a carrier gas introduction means 90 having a carrier gas injection port 92 placed in the valve element so as to lead to the valve port; and an exhaust port 28 for exhausting the source gas in the vaporizing chamber to the outside. COPYRIGHT: (C)2006,JPO&NCIPI