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公开(公告)号：JP2007005808A
公开(公告)日：2007-01-11
申请号：JP2006173769
申请日：2006-06-23
申请人： Megic Corp , 米輯電子股▲分▼有限公司
发明人： HAYASHI SHIGEO , CHOU CHIEN-KANG , CHEN KE-HUNG
IPC分类号： H01L21/3205 , H01L23/12 , H01L23/52
CPC分类号： H01L23/5227 , H01L21/2885 , H01L21/563 , H01L21/76801 , H01L21/76885 , H01L23/3114 , H01L23/5223 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/45 , H01L24/48 , H01L24/83 , H01L2224/0347 , H01L2224/0401 , H01L2224/04042 , H01L2224/04073 , H01L2224/05173 , H01L2224/05176 , H01L2224/05183 , H01L2224/05548 , H01L2224/05571 , H01L2224/05572 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05664 , H01L2224/05669 , H01L2224/1147 , H01L2224/13022 , H01L2224/13099 , H01L2224/131 , H01L2224/16 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/45164 , H01L2224/45169 , H01L2224/45173 , H01L2224/45176 , H01L2224/45183 , H01L2224/48091 , H01L2224/48463 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48664 , H01L2224/48669 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48864 , H01L2224/83101 , H01L2224/83192 , H01L2924/00011 , H01L2924/00014 , H01L2924/0002 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/09701 , H01L2924/10329 , H01L2924/12044 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/15787 , H01L2924/15788 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/351 , H01L2924/00 , H01L2224/48869 , H01L2224/83851 , H01L2224/05552 , H01L2224/05599
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a line device which is to be miniaturized. SOLUTION: A first metal pole and a second metal pole are arranged on a substrate. When maximum width of the first metal pole is divided by height of the first metal pole and the second metal pole, it is smaller than "4". Height of the first metal pole is 20 μm to 300 μm, and a distance from a center point of the first metal pole to a center point of the second metal pole is 10 μm to 250 μm. Thus, the distance between the metal poles can be reduced to ≤250 μm, and the number of pin holes can be suppressed to a target being ≤400. Performance of IC can effectively be improved, and resistance and load of an IC metal connection line of a low power IC element can be sharply reduced. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译： 要解决的问题：提供一种要小型化的线路装置的制造方法。 解决方案：第一金属极和第二金属极布置在基板上。 当第一金属极的最大宽度除以第一金属极和第二金属极的高度时，其小于“4”。 第一金属极的高度为20μm〜300μm，从第一金属极的中心点到第二金属极的中心点的距离为10μm〜250μm。 因此，金属极之间的距离可以降低到≤250μm，并且可以将针孔的数量抑制到目标值≤400。 可以有效地提高IC的性能，并且能够大幅降低低功率IC元件的IC金属连接线的电阻和负载。 版权所有（C）2007，JPO＆INPIT
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公开(公告)号：JP2007005810A
公开(公告)日：2007-01-11
申请号：JP2006173778
申请日：2006-06-23
申请人： Megic Corp , 米輯電子股▲分▼有限公司
发明人： HAYASHI SHIGEO , CHOU CHIEN-KANG , CHEN KE-HUNG
IPC分类号： H01L21/3205 , H01L21/768 , H01L21/822 , H01L23/12 , H01L23/52 , H01L27/04
CPC分类号： H01L23/5227 , H01L21/2885 , H01L21/563 , H01L21/76801 , H01L21/76885 , H01L23/3114 , H01L23/5223 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/45 , H01L24/48 , H01L24/83 , H01L2224/0347 , H01L2224/0401 , H01L2224/04042 , H01L2224/04073 , H01L2224/05173 , H01L2224/05176 , H01L2224/05183 , H01L2224/05548 , H01L2224/05571 , H01L2224/05572 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05664 , H01L2224/05669 , H01L2224/1147 , H01L2224/13022 , H01L2224/13099 , H01L2224/131 , H01L2224/16 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/45164 , H01L2224/45169 , H01L2224/45173 , H01L2224/45176 , H01L2224/45183 , H01L2224/48091 , H01L2224/48463 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48664 , H01L2224/48669 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48864 , H01L2224/83101 , H01L2224/83192 , H01L2924/00011 , H01L2924/00014 , H01L2924/0002 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/09701 , H01L2924/10329 , H01L2924/12044 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/15787 , H01L2924/15788 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/351 , H01L2924/00 , H01L2224/48869 , H01L2224/83851 , H01L2224/05552 , H01L2224/05599
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a line device, which relieves stress and makes an interval distance of a contact window structure small. SOLUTION: A semiconductor base part 30 includes at least one first metal pole positioned on the semiconductor base part 30 and one first polymer layer 46 positioned on the semiconductor base part 30 and on the first metal pole, The first polymer layer 46 is removed until one top part of the metal pole is exposed. One second metal pole is supplied. One metal connection line layer is formed on the first polymer layer 46 by an electroplating system. The metal connection line layer is connected to the first metal pole and the second metal pole. One titanium content metal layer is formed on the first polymer layer 46 before a forming step of the metal connection line layer. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译： 要解决的问题：提供减轻应力并使接触窗结构的间隔距离变小的线路装置的制造方法。 解决方案：半导体基底部分30包括位于半导体基底部分30上的至少一个第一金属极和位于半导体基底部分30上和第一金属极上的一个第一聚合物层46.第一聚合物层46是 去除直到金属极的一个顶部暴露。 提供一个第二个金属极。 通过电镀系统在第一聚合物层46上形成一个金属连接线层。 金属连接线层连接到第一金属极和第二金属极。 在金属连接线层的形成步骤之前，在第一聚合物层46上形成一个钛含量金属层。 版权所有（C）2007，JPO＆INPIT
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公开(公告)号：JP2007005809A
公开(公告)日：2007-01-11
申请号：JP2006173775
申请日：2006-06-23
申请人： Megic Corp , 米輯電子股▲分▼有限公司
发明人： HAYASHI SHIGEO , CHOU CHIEN-KANG , CHEN KE-HUNG
IPC分类号： H01L21/3205 , H01L21/60 , H01L23/12 , H01L23/52
CPC分类号： H01L23/5227 , H01L21/2885 , H01L21/563 , H01L21/76801 , H01L21/76885 , H01L23/3114 , H01L23/5223 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/45 , H01L24/48 , H01L24/83 , H01L2224/0347 , H01L2224/0401 , H01L2224/04042 , H01L2224/04073 , H01L2224/05173 , H01L2224/05176 , H01L2224/05183 , H01L2224/05548 , H01L2224/05571 , H01L2224/05572 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05664 , H01L2224/05669 , H01L2224/1147 , H01L2224/13022 , H01L2224/13099 , H01L2224/131 , H01L2224/16 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/45164 , H01L2224/45169 , H01L2224/45173 , H01L2224/45176 , H01L2224/45183 , H01L2224/48091 , H01L2224/48463 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48664 , H01L2224/48669 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48864 , H01L2224/83101 , H01L2224/83192 , H01L2924/00011 , H01L2924/00014 , H01L2924/0002 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/09701 , H01L2924/10329 , H01L2924/12044 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/15787 , H01L2924/15788 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/351 , H01L2924/00 , H01L2224/48869 , H01L2224/83851 , H01L2224/05552 , H01L2224/05599
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing process of a line device structure, which relieves stress and makes an interval distance of a contact window structure small, and to provide the structure. SOLUTION: The line device structure includes a substrate, a first metal pole 68 and a second metal pole. The first metal pole 68 is positioned on the substrate. When a maximum side dimension Hw of the first metal pole 68 is divided by height Ht of the first metal pole 68, it is smaller than "4". Height of the first metal pole 68 is 20 μm to 300 μm. The second metal pole is positioned on the substrate. When a maximum side dimension of the second metal pole is divided by height of the second metal pole, it is smaller than "4". A distance Hb from a center point of the first metal pole to a center point of the second metal pole is 10 μm to 250 μm. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译： 要解决的问题：提供减轻应力并使接触窗结构的间隔距离较小的线路装置结构的制造工艺，并提供结构。 线路器件结构包括衬底，第一金属极68和第二金属极。 第一金属杆68位于基底上。 当第一金属杆68的最大侧面尺寸Hw除以第一金属杆68的高度Ht时，其小于“4”。 第一金属杆68的高度为20μm〜300μm。 第二金属杆位于基板上。 当第二金属极的最大侧面尺寸除以第二金属杆的高度时，其小于“4”。 从第一金属极的中心点到第二金属极的中心点的距离Hb为10μm〜250μm。 版权所有（C）2007，JPO＆INPIT
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