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    Semiconductor device
    1.
    发明专利
    Semiconductor device 有权
    半导体器件

    公开(公告)号：JP2013118401A

    公开(公告)日：2013-06-13

    申请号：JP2013033154

    申请日：2013-02-22

    Applicant: Semiconductor Energy Lab Co Ltd ,  株式会社半導体エネルギー研究所

    Inventor： ARAI YASUYUKI ,  HONDA TATSUYA ,  AKIMOTO KENGO ,  KAWAMATA IKUKO

    IPC: H01L21/336 ,  G02F1/1368 ,  H01L29/786 ,  H01L51/50 ,  H05B33/14

    Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device including an oxide semiconductor with excellent electric characteristics.SOLUTION: A semiconductor device comprises: an oxide semiconductor layer; a first region having conductivity on the oxide semiconductor layer; a source electrode on the first region; a second region having conductivity on the oxide semiconductor layer; a drain electrode on the second region; and a gate electrode on the oxide semiconductor layer. The gate electrode has a region overlapping with the first region, and has a region overlapping with the second region.

    Abstract translation: 要解决的问题：提供包括具有优异电特性的氧化物半导体的半导体器件。 解决方案：半导体器件包括：氧化物半导体层; 在所述氧化物半导体层上具有导电性的第一区域; 在所述第一区域上的源电极; 在所述氧化物半导体层上具有导电性的第二区域; 在第二区域上的漏电极; 和氧化物半导体层上的栅电极。 栅电极具有与第一区重叠的区域，并且具有与第二区重叠的区域。 版权所有（C）2013，JPO＆INPIT

    Display device
    2.
    发明专利
    Display device 有权
    显示设备

    公开(公告)号：JP2013034002A

    公开(公告)日：2013-02-14

    申请号：JP2012235918

    申请日：2012-10-25

    Applicant: Semiconductor Energy Lab Co Ltd ,  株式会社半導体エネルギー研究所

    Inventor： ISA TOSHIYUKI ,  MORISUE MASAFUMI ,  KAWAMATA IKUKO

    IPC: H01L29/786 ,  H01L21/288 ,  H01L21/3205 ,  H01L21/768

    CPC classification number: H01L29/7869 ,  H01L27/124 ,  H01L27/1285 ,  H01L27/1292 ,  H01L51/0022 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: PROBLEM TO BE SOLVED: To provide a display device that obtains a pattern of a wiring and the like by improving utilization efficiency of a material and simplifying a manufacturing process and has a conductive film formed with high controllability in an intended shape of the pattern of the wiring and the like.SOLUTION: Each of a first conductive film and a second conductive film on a transistor is formed in an U-shape and has a plurality of folding points. Even in the case of the present shapes, patterns of the first conductive film and the second conductive film are formed with high controllability in intended shapes. In addition, the first conductive film and the second conductive film can function as a common electrode layer and a pixel electrode layer.

    Abstract translation: 解决的问题：提供一种通过提高材料的利用效率和简化制造工艺来获得布线图案等的显示装置，并且具有以预定形状的高可控性形成的导电膜 布线图案等。 解决方案：晶体管上的第一导电膜和第二导电膜中的每一个形成为U形并且具有多个折叠点。 即使在本形状的情况下，第一导电膜和第二导电膜的图案形成为期望形状的高可控性。 此外，第一导电膜和第二导电膜可以用作公共电极层和像素电极层。 版权所有（C）2013，JPO＆INPIT

    Lighting device
    3.
    发明专利
    Lighting device 有权
    照明设备

    公开(公告)号：JP2012124158A

    公开(公告)日：2012-06-28

    申请号：JP2011250967

    申请日：2011-11-16

    Applicant: Semiconductor Energy Lab Co Ltd ,  株式会社半導体エネルギー研究所

    Inventor： SEO TETSUSHI ,  HIROKI MASAAKI ,  HATANO KAORU ,  KAWAMATA IKUKO

    IPC: H05B33/04 ,  F21V15/01 ,  F21V31/00 ,  F21Y105/00 ,  H01L51/50 ,  H05B33/02 ,  H05B33/06

    CPC classification number: H01L51/524 ,  H01L2251/5361

    Abstract: PROBLEM TO BE SOLVED: To provide a highly reliable lighting device which improves convenience so as to have a shape suitable for the objective and be used for various purposes at low cost with the simple structure and process.SOLUTION: A light emitting panel (EL film) having a light emitting element including an electroluminescence (EL) layer provided at a flexible substrate is sealed in a glass housing. Since the EL film has flexibility, the panel can be provided so as to deform in various shapes to fit with the shape of the glass housing.

    Abstract translation: 要解决的问题：提供一种高度可靠的照明装置，其以简单的结构和工艺，以便宜的方式提供便利性，以便具有适合于该目的的形状并以低成本用于各种目的。 解决方案：将具有设置在柔性基板上的电致发光（EL）层的发光元件的发光面板（EL膜）密封在玻璃外壳中。 由于EL膜具有柔性，所以可以将面板设置成能够以各种形状变形以适应玻璃外壳的形状。 版权所有（C）2012，JPO＆INPIT

    Method of manufacturing semiconductor device
    4.
    发明专利
    Method of manufacturing semiconductor device 审中-公开
    制造半导体器件的方法

    公开(公告)号：JP2011086962A

    公开(公告)日：2011-04-28

    申请号：JP2011013925

    申请日：2011-01-26

    Applicant: Semiconductor Energy Lab Co Ltd ,  株式会社半導体エネルギー研究所

    Inventor： ARAI YASUYUKI ,  HONDA TATSUYA ,  AKIMOTO KENGO ,  KAWAMATA IKUKO

    IPC: H01L29/786 ,  H01L21/28 ,  H01L21/336 ,  H01L29/417

    Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device which has a thin-film transistor that uses a compound semiconductor having favorable electrical characteristics, and a method of manufacturing the same. SOLUTION: A compound semiconductor material is used as a semiconductor layer, and a buffer layer including a conductive organic compound and an inorganic compound is formed between the semiconductor layer and a source electrode layer and between the semiconductor layer and a drain electrode layer, respectively. The buffer layer is formed as a layer including the organic compound and the inorganic compound. By the buffer layer intervened between the semiconductor layer using the compound semiconductor material and the source electrode layer and between the semiconductor layer and the drain electrode layer, conductivity between the semiconductor layer and the source electrode layer and between the semiconductor layer and the drain electrode layer is improved, and favorable electrical connection can be established. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种具有使用具有良好电特性的化合物半导体的薄膜晶体管的半导体器件及其制造方法。 解决方案：化合物半导体材料用作半导体层，并且在半导体层和源电极层之间以及半导体层和漏电极层之间形成包括导电有机化合物和无机化合物的缓冲层 ， 分别。 缓冲层形成为包含有机化合物和无机化合物的层。 通过介于使用化合物半导体材料的半导体层和源极电极之间以及半导体层和漏极电极层之间的缓冲层，半导体层和源电极层之间以及半导体层和漏电极层之间的导电性 得到改善，可以建立良好的电连接。 版权所有（C）2011，JPO＆INPIT

    Semiconductor device, and method for manufacturing the same
    6.
    发明专利
    Semiconductor device, and method for manufacturing the same 有权
    半导体器件及其制造方法

    公开(公告)号：JP2011040726A

    公开(公告)日：2011-02-24

    申请号：JP2010158785

    申请日：2010-07-13

    Applicant: Semiconductor Energy Lab Co Ltd ,  株式会社半導体エネルギー研究所

    Inventor： YAMAZAKI SHUNPEI ,  SAKATA JUNICHIRO ,  MIYAKE HIROYUKI ,  KUWABARA HIDEAKI ,  KAWAMATA IKUKO

    IPC: H01L29/786 ,  G02F1/1343 ,  G02F1/1368 ,  H01L21/28

    CPC classification number: H01L27/1251 ,  G02F1/13454 ,  G02F2201/40 ,  G02F2202/10 ,  H01L27/1225 ,  H01L27/1233

    Abstract: PROBLEM TO BE SOLVED: To enhance a numerical aperture of a semiconductor device using an oxide semiconductor. SOLUTION: This semiconductor device includes a driving circuit portion and a display portion (called as a pixel portion), on the same substrate, the driving circuit portion includes a channel etched type thin film transistor for a driving circuit with a source electrode and a drain electrode constituted of metal and with a channel layer constituted of the oxide semiconductor, and a wire for the driving circuit constituted of metal, and the display portion includes a channel protective type thin film transistor for a pixel with a source electrode layer and a drain electrode layer constituted of the oxide conductor, and with a semiconductor layer constituted of the oxide semiconductor, and a wire for the display portion constituted of an oxide conductor. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：提高使用氧化物半导体的半导体器件的数值孔径。 解决方案：该半导体器件包括驱动电路部分和显示部分（称为像素部分），在同一基板上，驱动电路部分包括用于具有源电极的驱动电路的沟道蚀刻型薄膜晶体管 以及由金属构成的漏极电极和由氧化物半导体构成的沟道层，以及由金属构成的驱动电路的导线，显示部包括具有源电极层的像素的沟道保护型薄膜晶体管， 由氧化物导体构成的漏极电极层和由氧化物半导体构成的半导体层以及由氧化物导体构成的显示部的导线。 版权所有（C）2011，JPO＆INPIT

    Display device and manufacturing method of the same
    8.
    发明专利
    Display device and manufacturing method of the same 有权
    其显示装置及其制造方法

    公开(公告)号：JP2009076894A

    公开(公告)日：2009-04-09

    申请号：JP2008218506

    申请日：2008-08-27

    Applicant: Semiconductor Energy Lab Co Ltd ,  株式会社半導体エネルギー研究所

    Inventor： KOBAYASHI SATOSHI ,  KAWAMATA IKUKO ,  ORIKI KOJI ,  KOMORI SHIGEKI ,  ISA TOSHIYUKI ,  YAMAZAKI SHUNPEI

    IPC: H01L29/786 ,  G09F9/33 ,  H01L21/20 ,  H01L21/336

    CPC classification number: H01L29/04 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78696

    Abstract: PROBLEM TO BE SOLVED: To provide a display device including a thin film transistor with high electric characteristics and high reliability, and to provide a method of manufacturing the display device with high mass-productivity.
    SOLUTION: In a display device having an inverted-staggered channel-stop-type thin film transistor, the thin film transistor includes a microcrystalline semiconductor film including a channel formation region, and an impurity region containing an impurity element of one conductivity type is selectively provided in a region which is not overlapped with source and drain electrodes, in the channel formation region of the microcrystalline semiconductor film.
    COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 解决的问题：提供一种包括具有高电特性和高可靠性的薄膜晶体管的显示装置，并且提供一种制造具有高批量生产率的显示装置的方法。 解决方案：在具有反交错通道停止型薄膜晶体管的显示装置中，薄膜晶体管包括包含沟道形成区的微晶半导体膜和包含一种导电类型的杂质元素的杂质区 在微晶半导体膜的沟道形成区域中选择性地设置在不与源极和漏极重叠的区域中。 版权所有（C）2009，JPO＆INPIT

    Process for fabricating display
    9.
    发明专利
    Process for fabricating display 审中-公开
    制作显示的过程

    公开(公告)号：JP2008034832A

    公开(公告)日：2008-02-14

    申请号：JP2007168751

    申请日：2007-06-27

    Applicant: Semiconductor Energy Lab Co Ltd ,  株式会社半導体エネルギー研究所

    Inventor： YAMAZAKI SHUNPEI ,  SHOJI HIRONOBU ,  KAWAMATA IKUKO

    IPC: H01L21/336 ,  G02F1/1368 ,  G09F9/00 ,  H01L21/3205 ,  H01L29/786

    Abstract: PROBLEM TO BE SOLVED: To provide a technology for producing even a large area substrate having one side exceeding 1 m with low cost and high yield by reducing the number of times of photolithography, thereby simplifying the fabrication process of TFT, an electronic circuit employing it and a display formed of the TFT. SOLUTION: When a mask layer is formed, a composition containing a liquid material for forming a mask layer is applied to the outside of a pattern being formed (corresponding to the contour and the end portion of the pattern), thus forming a first framelike mask layer. A composition containing a liquid material for forming a second mask layer is applied to fill the space on the inside of the first framelike mask layer, thus forming a second mask layer. The first mask layer and the second mask layer are formed in contact with each other. Since the first mask layer is formed to surround the second mask layer, the first mask layer and the second mask layer can be used as one continuous mask layer. COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：为了提供一种通过减少光刻次数来生产甚至具有超过1μm的大面积基板，低成本和高产率的技术，从而简化了TFT的制造工艺，电子 采用它的电路和由TFT形成的显示器。 解决方案：当形成掩模层时，将包含用于形成掩模层的液体材料的组合物施加到正在形成的图案的外部（对应于图案的轮廓和端部），从而形成 第一个框架式掩模层。 施加包含用于形成第二掩模层的液体材料的组合物以填充第一框状掩模层的内部的空间，从而形成第二掩模层。 第一掩模层和第二掩模层彼此接触地形成。 由于第一掩模层被形成为围绕第二掩模层，所以第一掩模层和第二掩模层可以用作一个连续掩模层。 版权所有（C）2008，JPO＆INPIT

    Manufacturing method of display device
    10.
    发明专利
    Manufacturing method of display device 审中-公开
    显示装置的制造方法

    公开(公告)号：JP2008033284A

    公开(公告)日：2008-02-14

    申请号：JP2007168757

    申请日：2007-06-27

    Applicant: Semiconductor Energy Lab Co Ltd ,  株式会社半導体エネルギー研究所

    Inventor： YAMAZAKI SHUNPEI ,  SHOJI HIRONOBU ,  KAWAMATA IKUKO

    IPC: G09F9/00 ,  G02F1/1343 ,  G09F9/30 ,  H01L21/28 ,  H01L21/288 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/768 ,  H01L29/786 ,  H01L51/05 ,  H01L51/50 ,  H05B33/10

    Abstract: PROBLEM TO BE SOLVED: To provide a display device capable of improving the utilization efficiency of a material, which can be manufactured using a simplified manufacturing process, the manufacturing technology thereof, and a technology capable of forming patterns of a wiring and the like, constituting the display device in a shape of a user's choice and with superior controllability. SOLUTION: In forming a conductive layer, a composition containing a conductive material in a liquid form is attached to the outside of the pattern (contour and edges of the pattern) to be formed, forming a frame-like first conductive layer (or insulating layer). A composition containing a second conductive material in liquid form is attached, in a manner of filling the space inside the frame-like first conductive layer, and forming a second conductive layer. The first conductive layer and the second conductive layer are formed, in such a manner that they contact each other, and the first conductive layer is formed, in such a manner that it surrounds the periphery of the second conductive layer, and the first conductive layer and the second conductive layer can be used as a single continuous conductive layer. COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：为了提供能够提高可以使用简化的制造工艺制造的材料的利用效率的显示装置，其制造技术以及能够形成布线图案的技术，以及 像显示装置一样构成用户选择的形状并且具有优异的可控性。 解决方案：在形成导电层中，将含有液体形式的导电材料的组合物附接到待形成的图案的外部（图案的轮廓和边缘），形成框状的第一导电层（ 或绝缘层）。 一种包含液体形式的第二导电材料的组合物以填充框架状第一导电层内的空间的方式附着，并形成第二导电层。 第一导电层和第二导电层以这样的方式形成，使得它们彼此接触，并且形成第一导电层，使得其围绕第二导电层的周边，并且第一导电层 并且第二导电层可以用作单个连续导电层。 版权所有（C）2008，JPO＆INPIT

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