Abstract:
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device in high yield without damaging a layered product, and a method for manufacturing an entirely thin, light-weight, and flexible semiconductor device in high yield. SOLUTION: The method for manufacturing a semiconductor device includes: forming a photocatalytic layer 102 and an organic compound layer 103 in contact with the photocatalytic layer, on a substrate having 101 a light transmitting property; forming an element forming layer on the substrate having the light transmitting property through the photocatalytic layer and the organic compound layer in contact with the photocatalytic layer; and separating the element forming layer from the substrate having the light transmitting property after the photocatalytic layer is irradiated with light through the substrate having the light transmitting property. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a display which exhibits high functionality including a lower power consumption and a higher light emitting efficiency, as well as high reliability. SOLUTION: The manufacturing method manufactures a light emitting element in a method of irradiating a light onto a luminous material, scattering the light irradiated luminous material into a solution containing a binder for forming a solution containing the light irradiated luminous material and the binder, forming a primary electrode layer, depositing the solution onto the primary electrode layer for forming a light emitting layer containing the light irradiated luminous material and the binder, and forming a secondary electrode layer on the light emitting layer. An insulating layer may be attached between the primary electrode layer and light emitting layer, or between the secondary electrode layer and light emitting layer. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin film transistor in self-alignment by using a liquid drop discharging method regardless of the accuracy of the discharge position of a liquid drop discharging device. SOLUTION: An organic resin film 107 or the like are applied, and the organic resin film 107 is processed into a desired shape by using such a method as etch back, exposure, and development. A semiconductor layer 104 containing impurities of one conductive type is etched with the organic resin film having the desired shape as a mask. The organic resin film having the desired shape is used to form regions with different wettability. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To form multiple sensor elements in a limited amount of area and to reduce an area that the sensor elements occupy and accumulate so that higher output and smaller physical size of a sensor element can be realized in the future. SOLUTION: Higher output and smaller physical size are achieved by integrating an output amplifier circuit composed of TFT having a crystal structure semiconductor film (typically polysilicon film) with a sensor element using an amorphous semiconductor film (typically amorphous silicon film) on a heat-resistant plastic film substrate which can resist temperature at a time of packaging for solder reflow treatment and the like. Sensor elements strong against bending stress can be realized. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide: a technique of manufacturing a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and a property before peeling are kept; and a technique of manufacturing even more reliable semiconductor devices and display devices with a high yield without complicating the devices or the processes.SOLUTION: An organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property. An element layer is formed over the organic compound layer including a photocatalyst substance. The organic compound layer including the photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.
Abstract:
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device with high yield without damaging a laminate, and provide a method for manufacturing an overall thin, lightweight, and flexible semiconductor device with high yield.SOLUTION: A manufacturing method for a semiconductor device includes: forming a photocatalyst layer and an organic compound layer in contact with the photocatalyst layer on a light-transmitting substrate; forming an element formation layer on the light-transmitting substrate via the photocatalyst layer and the organic compound layer in contact with the photocatalyst layer; irradiating the photocatalyst layer with light via the light-transmitting substrate; and separating the element formation layer from the light-transmitting substrate.
Abstract:
PROBLEM TO BE SOLVED: To provide a method for easily forming a region with conductivity and high wettability without a step for removing a photocatalytic reaction layer, which is formed over a conductive layer. SOLUTION: The photocatalytic reaction layer is formed over a photocatalytic conductive layer, and the photocatalytic conductive layer is irradiated with ultraviolet light to form a region with conductivity and higher wettability than the photocatalytic reaction layer on a surface of the photocatalytic conductive layer which is irradiated with ultraviolet light, wherein as the photocatalytic conductive layer, a layer having a photocatalytic property of which resistivity is ≤1×10 -2 Ωcm can be used. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a pattern of wiring is manufactured by improving a use efficiency of a material and simplifying a manufacturing step, and a technique capable of forming the pattern of wiring in a desired shape and with good controllability. SOLUTION: There is provided a semiconductor device having a pattern formed by discharging a plurality of first droplets composed of a composition including a pattern material so as to have a center on a first line, and discharging a plurality of second droplets between the first droplets so as to have a center on a second line. The first line and the second line have a constant distance, and therefore a side edge of the pattern has a wave-like shape. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device which is manufactured by simplifying the manufacturing process while enhancing utilization efficiency of material, and also to provide a display, its manufacturing technology, and a technique for forming the wiring pattern constituting these semiconductor devices and the display with desired profile and high controllability. SOLUTION: Conductor layers having nodes are formed adjacently at a uniform interval. In the adjacent conductive layers, a liquid drop is ejected while shifting the central position in the length direction of wiring not to be aligned in the line width direction. Since the center of a liquid drop is shifted, maximum line width parts (maximum node) of the conductive layers do not adjoin and the conductive layers can be provided adjacently at a narrower interval. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide the method of forming a substrate which has a conductive layer capable of controlling a space between adjacent conductive layers, which is capable of controlling the width and the thickness of the conductive layer, and which has the thick conductive layer whose width is small in particular. SOLUTION: The method of manufacturing a substrate 100 having a conductive layer forms the conductive layer 121 by forming an inorganic insulating layer 101 on a substrate, forming an organic resin layer having a desired profile on the inorganic insulating layer 101, forming a layer 102 in which the wetness of a composition having a conductive particle is low on the first exposed portion of the inorganic insulating layer, removing the organic resin layer, and then applying and calcinating the composition having the conductive particle on the second exposed portion of the inorganic insulating layer. COPYRIGHT: (C)2006,JPO&NCIPI