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公开(公告)号:JP2014186341A
公开(公告)日:2014-10-02
申请号:JP2014103295
申请日:2014-05-19
Applicant: Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
Inventor: KOYAMA JUN , OTANI HISASHI , OGATA YASUSHI , YAMAZAKI SHUNPEI
IPC: G02F1/1345 , G09F9/30
Abstract: PROBLEM TO BE SOLVED: To provide a display device reduced in electric resistance of wiring.SOLUTION: A display device includes a thin film transistor formed on the upper part of a substrate and wiring which is formed on the upper part of the substrate, is provided along the sides of a display part of the substrate and is electrically connected to a flat cable and the thin film transistor. The wiring has first wiring formed on the same layer as the source electrode or the drain electrode of the thin film transistor and second wiring formed on the upper part of the first wiring via an insulating film. The first wiring is provided in parallel with the second wiring and electrically connected to the second wiring via a plurality of contact holes bored in the insulating film.
Abstract translation: 要解决的问题:提供一种降低布线电阻的显示装置。解决方案:一种显示装置,包括形成在基板上部的薄膜晶体管和形成在基板上部的布线 沿着基板的显示部分的侧面电连接到扁平电缆和薄膜晶体管。 布线具有通过绝缘膜形成在与薄膜晶体管的源电极或漏电极相同的层上的第一布线和在第一布线的上部形成的第二布线。 第一布线与第二布线并联设置,并且经由在绝缘膜中钻出的多个接触孔电连接到第二布线。
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公开(公告)号:JP2013083991A
公开(公告)日:2013-05-09
申请号:JP2012258611
申请日:2012-11-27
Applicant: Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
Inventor: OTANI HISASHI , OSAME MITSUAKI , SHIINA YASUKO
CPC classification number: Y02B20/343
Abstract: PROBLEM TO BE SOLVED: To provide a display unit which is unaffected by occurrence of burn-in, achieves enhanced functionality and high value addition, reduces power consumption, accurately writes signals, and improves the duty factor.SOLUTION: A display unit includes a first display region and a second display region, which are disposed on one surface of a substrate. The first display region includes a plurality of first pixels 13, and the second display region includes a plurality of second pixels 14. Each of the first pixel 13 and the second pixel 14 includes a light emitter. The first pixels and the second pixels have pitches in the column direction and pitches in the raw direction, respectively, and the pitches "a" and "c" in one direction is identical, while the pitches "b" and "d" in another direction is different.
Abstract translation: 要解决的问题:为了提供不受老化现象影响的显示单元,实现增强的功能和高附加值,降低功耗,精确写入信号,并提高占空比。 解决方案:显示单元包括设置在基板的一个表面上的第一显示区域和第二显示区域。 第一显示区域包括多个第一像素13,第二显示区域包括多个第二像素14.第一像素13和第二像素14中的每一个包括光发射器。 第一像素和第二像素分别在列方向上具有间距并沿原始方向间距,并且在一个方向上的间距“a”和“c”相同,而另一个方向上的间距“b”和“d” 方向不同。 版权所有(C)2013,JPO&INPIT
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公开(公告)号:JP2012230402A
公开(公告)日:2012-11-22
申请号:JP2012144139
申请日:2012-06-27
Applicant: Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
Inventor: MIYAGAWA KEISUKE , NAGAO SHO , OTANI HISASHI
CPC classification number: G09G3/3258 , G09G3/2029 , G09G2300/0842 , G09G2300/0861 , G09G2310/0251 , G09G2320/0266
Abstract: PROBLEM TO BE SOLVED: To suppress occurrence of pseudo contour while suppressing the driving frequency of a driving circuit.SOLUTION: A display device includes a pixel portion performing gradation display using a plurality of sub-frame periods. A first table stores a plurality of sub-frame periods corresponding to the gradation of a first pixel in the pixel portion. A second table stores a plurality of sub-frame periods corresponding to the gradation of a second pixel adjacent to the first pixel in the pixel portion. The number of the sub-frame periods stored in the first table for displaying the same gradation is different from the number of the sub-frame periods stored in the second table. The two sub-frame periods whose gradation is different by one stage and which are stored in the first table include the sub-frame periods commonly in a light-emitting state. The two sub-frame periods whose gradation is different by one stage and which are stored in the second table include the sub-frame periods commonly in a light-emitting state.
Abstract translation: 要解决的问题:抑制驱动电路的驱动频率的同时抑制伪轮廓的发生。 解决方案:显示装置包括使用多个子帧周期执行灰度显示的像素部分。 第一表存储与像素部分中的第一像素的灰度相对应的多个子帧周期。 第二表存储对应于与像素部分中的第一像素相邻的第二像素的灰度的多个子帧周期。 存储在用于显示相同灰度的第一表中的子帧周期的数量与存储在第二表中的子帧周期的数量不同。 灰度等级一级并存储在第一表中的两个子帧周期包括通常处于发光状态的子帧周期。 灰度等级一级并存储在第二表中的两个子帧周期包括通常处于发光状态的子帧周期。 版权所有(C)2013,JPO&INPIT
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公开(公告)号:JP2011171748A
公开(公告)日:2011-09-01
申请号:JP2011051223
申请日:2011-03-09
Applicant: Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
Inventor: HIROSUE MISAKO , KASAHARA KENJI , OTANI HISASHI
IPC: H01L21/336 , G02F1/1368 , G09F9/30 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L51/50 , H05B33/02 , H05B33/10 , H05B33/14
CPC classification number: H01L27/12 , H01L27/1281
Abstract: PROBLEM TO BE SOLVED: To enable high-speed operation of a TFT by preparing a crystalline semiconductor film in which the locations and sizes of crystal grains have been controlled and employing the crystalline semiconductor film as the channel forming region of the TFT. SOLUTION: A film 2 having an island shape and tapered surfaces at its ends is formed on a substrate 1, whereuponan inorganic insulating film 3 and an amorphous semiconductor film are formed. Subsequently, the amorphous semiconductor film is crystallized by laser annealing. The material and thickness of the film 2 having the island shape and tapered surfaces at its ends or those of the inorganic insulating film 3 are properly regulated, whereby the cooling rate of the semiconductor film is lowered to form a first region 4a in which crystal grain diameters are large. COPYRIGHT: (C)2011,JPO&INPIT
Abstract translation: 要解决的问题:通过制备其中晶粒的位置和尺寸已经被控制并且使用晶体半导体膜作为TFT的沟道形成区域的晶体半导体膜来实现TFT的高速操作。 解决方案:在基板1上形成具有岛状和锥形表面的膜2,由此形成无机绝缘膜3和非晶半导体膜。 随后,通过激光退火使非晶半导体膜结晶。 适当地调节具有岛状和其端部的锥形表面的膜2的材料和厚度,同时降低半导体膜的冷却速率,形成第一区域4a,其中晶粒 直径很大。 版权所有(C)2011,JPO&INPIT
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公开(公告)号:JP2010226127A
公开(公告)日:2010-10-07
申请号:JP2010117933
申请日:2010-05-24
Applicant: Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
Inventor: SUGIYAMA EIJI , MICHIMAE YOSHITAKA , OTANI HISASHI , TSURUME TAKUYA
IPC: H01L21/02 , G06K19/07 , G06K19/077 , H01L21/20 , H01L27/12
CPC classification number: H01L27/1266 , H01L23/145 , H01L23/49855 , H01L27/105 , H01L27/115 , H01L27/1248 , H01L27/13 , H01L29/78603 , H01L2223/6677 , H01L2224/16225 , H01L2924/07811 , H01L2924/09701 , H01L2924/12044 , H01Q1/2225 , H01Q1/2283 , H01L2924/00
Abstract: PROBLEM TO BE SOLVED: To provide: a semiconductor device which is not easily damaged even when pressure is locally applied thereto from the outside; and a method for manufacturing a highly-reliable semiconductor device, which is not destroyed by external local pressure, with a high yield. SOLUTION: A structural body, in which high-strength fiber of an organic compound or an inorganic compound is impregnated with an organic resin, is provided over an element layer having a semiconductor element formed using a non-single crystal semiconductor layer, and heating and pressure bonding are performed, whereby a semiconductor device is manufactured, to which the element layer and the structural body in which the high-strength fiber of an organic compound or an inorganic compound is impregnated with the organic resin are firmly fixed together. COPYRIGHT: (C)2011,JPO&INPIT
Abstract translation: 要解决的问题:提供:即使从外部局部施加压力也不容易损坏的半导体装置; 以及以高产率制造不被外部局部压力破坏的高可靠性半导体器件的方法。 解决方案:在具有使用非单晶半导体层形成的半导体元件的元件层上设置将有机化合物或无机化合物的高强度纤维用有机树脂浸渍的结构体, 进行加压和压接,从而制造半导体器件,将有机化合物或无机化合物的高强度纤维与有机树脂浸渍的元件层和结构体牢固地固定在该半导体器件上。 版权所有(C)2011,JPO&INPIT
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公开(公告)号:JP2009206527A
公开(公告)日:2009-09-10
申请号:JP2009143225
申请日:2009-06-16
Applicant: Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
Inventor: YAMAZAKI SHUNPEI , OTANI HISASHI , MORIWAKA YOSHIE
IPC: H01L21/20 , H01L21/336 , H01L29/786
CPC classification number: H01L21/2022 , H01L21/268 , H01L27/1285
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device which is provided with a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film as a channel formation area. SOLUTION: The semiconductor device is provided with a crystalline semiconductor thin film having a surface shape wherein areas having heights ranging a maximum value to a half of a difference between the maximum value and a minimum value share 29 to 72% of the entire areas. COPYRIGHT: (C)2009,JPO&INPIT
Abstract translation: 要解决的问题:提供一种设置有单晶半导体薄膜或基本单晶半导体薄膜作为沟道形成区的半导体器件。 解决方案:半导体器件设置有具有表面形状的晶体半导体薄膜,其中具有最大值至最大值与最小值之间的差的一半的高度的区域占整体的29至72% 地区 版权所有(C)2009,JPO&INPIT
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公开(公告)号:JP2009116335A
公开(公告)日:2009-05-28
申请号:JP2008289703
申请日:2008-11-12
Applicant: Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
Inventor: KOYAMA JUN , OTANI HISASHI , OGATA YASUSHI , YAMAZAKI SHUNPEI
IPC: G09F9/30 , G02F1/1343 , G02F1/1345 , G02F1/1368 , H01L27/32 , H01L51/50 , H05B33/06
Abstract: PROBLEM TO BE SOLVED: To provide a display device which is reduced in electric resistance of wiring.
SOLUTION: The display device has: a thin film transistor formed over a substrate 101; and wiring formed over the substrate, provided along a side of a display unit that the substrate has, and electrically connected to a flat cable and the thin film transistor. The wiring comprises first wiring formed in the same layer with the source electrode 109 or drain electrode 110 of the thin film transistor and second wiring formed over the first wiring with an insulating film interposed therebetween, wherein the first wiring is provided in parallel to the second wiring and electrically connected to the second wiring through a plurality of contact holes bored in the insulating film.
COPYRIGHT: (C)2009,JPO&INPITAbstract translation: 要解决的问题:提供一种降低布线电阻的显示装置。 解决方案:显示装置具有:形成在衬底101上的薄膜晶体管; 以及沿着基板具有的显示单元的一侧设置在基板上的布线,并且与扁平电缆和薄膜晶体管电连接。 布线包括与薄膜晶体管的源电极109或漏电极110形成在同一层中的第一布线,并且在第一布线上形成有绝缘膜的第二布线,其中第一布线平行于第二布线设置 布线并且通过在绝缘膜中钻孔的多个接触孔电连接到第二布线。 版权所有(C)2009,JPO&INPIT
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公开(公告)号:JP2009006131A
公开(公告)日:2009-01-15
申请号:JP2008133285
申请日:2008-05-21
Applicant: Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
Inventor: OTANI HISASHI
CPC classification number: G07F17/3241 , G07F17/32 , G07F17/3202 , G07F17/3293
Abstract: PROBLEM TO BE SOLVED: To provide a card game machine capable of enhancing gameplay.
SOLUTION: A card game machine has a game board including a plurality of reader/writers configured to communicate with a semiconductor device which is mounted on a card and capable of wireless communication, and a control device connected to the reader/writer and configured to determine the position or orientation of the card or whether the card is put face up or down based on a signal from the reader/writer. By arrangement of a plurality of reader/writers and RF chips in the game board, not only data of the card but also signal strength can be detected, and the detailed position of an RF chip of the card which is placed on the game board can be specified.
COPYRIGHT: (C)2009,JPO&INPITAbstract translation: 要解决的问题:提供能够增强游戏玩法的纸牌游戏机。 解决方案:一种纸牌游戏机具有游戏板,其包括多个读取器/写入器,其被配置为与安装在卡上并且能够进行无线通信的半导体器件进行通信,以及连接到读取器/写入器的控制装置, 被配置为基于来自读取器/写入器的信号来确定卡的位置或方位,或者卡是面朝上还是向下放置。 通过在游戏板中配置多个读取器/写入器和RF芯片,不仅可以检测卡的数据,还可以检测信号强度,并且放置在游戏板上的卡的RF芯片的详细位置可以 被指定。 版权所有(C)2009,JPO&INPIT
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公开(公告)号:JP2008270762A
公开(公告)日:2008-11-06
申请号:JP2008062132
申请日:2008-03-12
Applicant: Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
Inventor: MICHIMAE YOSHITAKA , SUGIYAMA EIJI , OTANI HISASHI , TSURUME TAKUYA
IPC: H01L21/56 , G06K19/07 , G06K19/077 , H01L21/8247 , H01L23/29 , H01L23/31 , H01L27/115 , H01L29/786 , H01L29/788 , H01L29/792
CPC classification number: H01L23/293 , H01L27/12 , H01L27/1214 , H01L2924/0002 , H01L2924/12044 , H05K1/185 , H05K1/189 , H01L2924/00
Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing, with a high yield, a reliable semiconductor device that cannot be destroyed by pressure applied locally from outside.
SOLUTION: A semiconductor device is manufactured by forming an element substrate having a semiconductor element formed by a single-crystal semiconductor substrate or an SOI substrate, or a single-crystal substrate or an SOI substrate, providing the fibrous body of an organic or inorganic compound on the element substrate, applying a composition including an organic resin from the element substrate and the fibrous body, and forming a sealing layer, where the fibrous body of the organic or inorganic compound is impregnated with the organic resin, on the element substrate by heating.
COPYRIGHT: (C)2009,JPO&INPITAbstract translation: 要解决的问题:提供一种以高产率制造不能被外部施加的压力破坏的可靠的半导体器件的方法。 解决方案:通过形成具有由单晶半导体衬底或SOI衬底或单晶衬底或SOI衬底形成的半导体元件的元件衬底来制造半导体器件,提供有机的纤维体 或无机化合物,从元件基板和纤维体涂布包含有机树脂的组合物,形成有机或无机化合物的纤维体被有机树脂浸渍的密封层,该密封层在元件 底物加热。 版权所有(C)2009,JPO&INPIT
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公开(公告)号:JP2007258738A
公开(公告)日:2007-10-04
申请号:JP2007131383
申请日:2007-05-17
Applicant: Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
Inventor: YAMAZAKI SHUNPEI , OTANI HISASHI , HIROKI MASAAKI , TANAKA KOICHIRO , SHIGA AIKO , MURAKAMI TOMOHITO , AKIBA MAI
IPC: H01L21/20 , B23K26/06 , H01L21/268 , H01L21/336 , H01L21/768 , H01L21/77 , H01L27/32 , H01L29/786 , H01L51/52
CPC classification number: H01L27/1285 , B23K26/0604 , B23K26/0608 , B23K26/066 , B23K26/0738 , H01L21/2026 , H01L21/76894 , H01L27/1296 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L51/5284 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device using a laser crystallization process capable of increasing efficiency in substrate treatment. SOLUTION: A plurality of laser beams emitted from a plurality of laser emission devices are superposed in performing laser crystallization. And, a scope in which the laser beams can be superposed is calculated from the scope of a laser energy intensity in which a semiconductor film excellent in crystallinity is obtained by inducing a relational expression between the laser energy intensity and distances between peaks of laser energy intensities of adjacent laser beams, portions of weak laser intensities can be compensated and the number of the times of scanning the laser beams can be decreased. COPYRIGHT: (C)2008,JPO&INPIT
Abstract translation: 要解决的问题:提供一种使用能够提高衬底处理效率的激光结晶方法的半导体器件。 解决方案:在执行激光结晶时,叠加从多个激光发射装置发射的多个激光束。 并且,可以从激光能量强度的范围计算激光束的范围,其中通过在激光能量强度和激光能量强度的峰值之间的距离之间的关系表达式获得结晶度优异的半导体膜, 的相邻激光束,可以补偿弱激光强度的部分,并且可以减少扫描激光束的次数。 版权所有(C)2008,JPO&INPIT
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