公开(公告)号：JP2012182129A

公开(公告)日：2012-09-20

申请号：JP2012025877

申请日：2012-02-09

Applicant: Semiconductor Energy Lab Co Ltd ,  株式会社半導体エネルギー研究所

Inventor： TSURUME TAKUYA

IPC: H05B33/26 ,  H01L51/50 ,  H05B33/02 ,  H05B33/04

CPC classification number: H01L51/5228 ,  H01L51/5212 ,  H01L51/529 ,  H01L2251/5315 ,  H01L2251/5361

Abstract: PROBLEM TO BE SOLVED: To provide a light-emitting device with top emission structure capable of achieving low power consumption.SOLUTION: A convex structure body is formed on a substrate on which an organic EL element is to be formed, and then, an upper electrode layer is formed. Thereby, the upper electrode layer has structure with a shape fitting the convex shape. A conductive layer is formed on the substrate encapsulating the organic EL layer. By encapsulating a formation surface of the upper electrode layer and a formation surface of the conductive layer in a state that the both formation surfaces are opposed to each other, at least a part of an electrode layer overlapped with the convex structure body contacts with the conductive layer, and a resistivity of the upper electrode layer is drastically reduced. Thereby, the power consumption of a light-emitting element can be reduced.

Abstract translation: 要解决的问题：提供具有能够实现低功耗的顶部发射结构的发光装置。 解决方案：在其上将形成有机EL元件的基板上形成凸结构体，然后形成上电极层。 由此，上部电极层具有形状为凸形的结构。 在封装有机EL层的基板上形成导电层。 通过在两个形成表面彼此相对的状态下封装上电极层的形成表面和导电层的形成表面，与凸结构体重叠的电极层的至少一部分与导电 层，并且上电极层的电阻率急剧降低。 由此，可以降低发光元件的功耗。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2011197696A

公开(公告)日：2011-10-06

申请号：JP2011134989

申请日：2011-06-17

Applicant: Semiconductor Energy Lab Co Ltd ,  株式会社半導体エネルギー研究所

Inventor： GOTO YUGO ,  FUKUMOTO YUMIKO ,  TAKAYAMA TORU ,  MARUYAMA JUNYA ,  TSURUME TAKUYA

IPC: G09F9/00 ,  H01L29/786 ,  H01L21/02 ,  H01L21/336 ,  H01L21/762 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/32 ,  H01L51/52 ,  H01L51/56

CPC classification number: H01L27/1266 ,  G02F2001/13613 ,  H01L27/3246 ,  H01L51/524 ,  H01L51/5246 ,  H01L51/5253 ,  H01L51/56 ,  H01L2221/68368 ,  H01L2227/323 ,  H01L2227/326 ,  Y10S438/976 ,  Y10S438/977

Abstract: PROBLEM TO BE SOLVED: To prevent a defect such as a crack from being generated when press-bonding an FPC to a device after transferred to a flexible substrate having flexibility such as a plastic film substrate.SOLUTION: A layer 405a including a circuit having an element, and a terminal electrode 405b are formed as a transferring layer to be separated, and a resin protection layer 405c is formed thereon to prevent the crack. An electrode face of the terminal electrode is exposed in a portion connected with the FPC. The FPC 407 is press-bonded to be connected by an anisotropic conductive film 406. A wire is protected by the protection layer 405c in the press-bonding process to prevent thereby the crack from being generated due to pressurization deformation.

Abstract translation: 要解决的问题：为了防止在将FPC转移到具有柔性的柔性基板的塑料膜基板上之后将FPC压接到器件时产生诸如裂纹的缺陷。解决方案：包括具有 元件和端子电极405b形成为要分离的转移层，并且在其上形成树脂保护层405c以防止裂纹。 端子电极的电极面暴露在与FPC连接的部分中。 FPC 407被压接以通过各向异性导电膜406连接。在压接过程中，线被保护层405c保护，从而防止由于加压变形而产生裂纹。

公开(公告)号：JP2011070774A

公开(公告)日：2011-04-07

申请号：JP2009218303

申请日：2009-09-23

Applicant: Semiconductor Energy Lab Co Ltd ,  株式会社半導体エネルギー研究所

Inventor： AOYAMA TOMOYA ,  IKEDA TOSHIO ,  IBE TAKAHIRO ,  TSURUME TAKUYA ,  TAKAHASHI REINA

IPC: H05B33/10 ,  C23C14/04 ,  C23C14/12 ,  H01L51/50

Abstract: PROBLEM TO BE SOLVED: To provide a film forming method with a material layer, containing two or more kinds of film formation materials having different sublimation temperatures, formed on a support substrate by heating treatment on a film-formed substrate, without generating concentration gradient of two or more kinds of film formation material having different sublimation temperatures. SOLUTION: In the film formation method, with one of the surfaces of a first substrate having an absorption layer formed on a surface of the substrate, and a material layer formed on the absorption layer and containing a first film formation material, a second film formation material and a polymer compound satisfies the formula (1): Ta-100≤S≤400 (in the formula, S indicates the glass transition temperature (°C) of the polymer compound, and T a indicates a higher temperature (°C) of the sublimation temperatures (°C) of the first and the second film formation materials); and a film-formed surface of a second substrate are arranged mutually facing; and a layer including the first and the second film formation materials is formed on the film-formed surface of the second substrate, by carrying out heat treatment from the other surface side of the first substrate. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 解决问题：为了提供具有材料层的成膜方法，该材料层含有两种或更多种具有不同升华温度的成膜材料，通过在膜形成的基材上进行加热处理而形成在支撑基板上，而不产生 具有不同升华温度的两种或更多种成膜材料的浓度梯度。 解决方案：在成膜方法中，在形成在基板的表面上的具有吸收层的第一基板的表面之一和形成在吸收层上并含有第一成膜材料的材料层之后， 第二成膜材料和高分子化合物满足式（1）：Ta-100≤S≤400（在该式中，S表示高分子化合物的玻璃化转变温度（℃），T < SB>表示第一和第二成膜材料的升华温度（℃）的较高温度（℃））。 并且第二基板的膜形成表面相互面对地布置; 并且通过从第一基板的另一表面侧进行热处理，在第二基板的膜形成表面上形成包括第一和第二成膜材料的层。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010226127A

公开(公告)日：2010-10-07

申请号：JP2010117933

申请日：2010-05-24

Applicant: Semiconductor Energy Lab Co Ltd ,  株式会社半導体エネルギー研究所

Inventor： SUGIYAMA EIJI ,  MICHIMAE YOSHITAKA ,  OTANI HISASHI ,  TSURUME TAKUYA

IPC: H01L21/02 ,  G06K19/07 ,  G06K19/077 ,  H01L21/20 ,  H01L27/12

CPC classification number: H01L27/1266 ,  H01L23/145 ,  H01L23/49855 ,  H01L27/105 ,  H01L27/115 ,  H01L27/1248 ,  H01L27/13 ,  H01L29/78603 ,  H01L2223/6677 ,  H01L2224/16225 ,  H01L2924/07811 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01Q1/2225 ,  H01Q1/2283 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide: a semiconductor device which is not easily damaged even when pressure is locally applied thereto from the outside; and a method for manufacturing a highly-reliable semiconductor device, which is not destroyed by external local pressure, with a high yield. SOLUTION: A structural body, in which high-strength fiber of an organic compound or an inorganic compound is impregnated with an organic resin, is provided over an element layer having a semiconductor element formed using a non-single crystal semiconductor layer, and heating and pressure bonding are performed, whereby a semiconductor device is manufactured, to which the element layer and the structural body in which the high-strength fiber of an organic compound or an inorganic compound is impregnated with the organic resin are firmly fixed together. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供：即使从外部局部施加压力也不容易损坏的半导体装置; 以及以高产率制造不被外部局部压力破坏的高可靠性半导体器件的方法。 解决方案：在具有使用非单晶半导体层形成的半导体元件的元件层上设置将有机化合物或无机化合物的高强度纤维用有机树脂浸渍的结构体， 进行加压和压接，从而制造半导体器件，将有机化合物或无机化合物的高强度纤维与有机树脂浸渍的元件层和结构体牢固地固定在该半导体器件上。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2008270762A

公开(公告)日：2008-11-06

申请号：JP2008062132

申请日：2008-03-12

Applicant: Semiconductor Energy Lab Co Ltd ,  株式会社半導体エネルギー研究所

Inventor： MICHIMAE YOSHITAKA ,  SUGIYAMA EIJI ,  OTANI HISASHI ,  TSURUME TAKUYA

IPC: H01L21/56 ,  G06K19/07 ,  G06K19/077 ,  H01L21/8247 ,  H01L23/29 ,  H01L23/31 ,  H01L27/115 ,  H01L29/786 ,  H01L29/788 ,  H01L29/792

CPC classification number: H01L23/293 ,  H01L27/12 ,  H01L27/1214 ,  H01L2924/0002 ,  H01L2924/12044 ,  H05K1/185 ,  H05K1/189 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing, with a high yield, a reliable semiconductor device that cannot be destroyed by pressure applied locally from outside.
SOLUTION: A semiconductor device is manufactured by forming an element substrate having a semiconductor element formed by a single-crystal semiconductor substrate or an SOI substrate, or a single-crystal substrate or an SOI substrate, providing the fibrous body of an organic or inorganic compound on the element substrate, applying a composition including an organic resin from the element substrate and the fibrous body, and forming a sealing layer, where the fibrous body of the organic or inorganic compound is impregnated with the organic resin, on the element substrate by heating.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种以高产率制造不能被外部施加的压力破坏的可靠的半导体器件的方法。 解决方案：通过形成具有由单晶半导体衬底或SOI衬底或单晶衬底或SOI衬底形成的半导体元件的元件衬底来制造半导体器件，提供有机的纤维体 或无机化合物，从元件基板和纤维体涂布包含有机树脂的组合物，形成有机或无机化合物的纤维体被有机树脂浸渍的密封层，该密封层在元件 底物加热。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2007013106A

公开(公告)日：2007-01-18

申请号：JP2006132065

申请日：2006-05-11

Applicant: Semiconductor Energy Lab Co Ltd ,  株式会社半導体エネルギー研究所

Inventor： KUSUMOTO NAOTO ,  TSURUME TAKUYA

IPC: H01L21/02 ,  G06K19/07 ,  G06K19/077 ,  H01L21/20 ,  H01L21/336 ,  H01L27/12 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a very thin, low-cost thin film integrated circuit that can be mass-produced and differs from conventional glass substrates or monocrystal silicon substrates, and the structure or process of a thin film integrated circuit device or IC chip that uses the thin film integrated circuit. SOLUTION: A first insulating film is formed on either of the surfaces of a silicon substrate, a layer having at least two thin film integrated circuits is formed on the above first insulating layer, a resin layer is formed over a layer having the above thin film integrated circuit, a film is formed over the above resin layer, the rear of a surface is ground with a layer having the above thin film integrated circuit of the above silicon substrate, and the ground surface of the above silicon substrate is polished. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供可以批量生产并且与常规玻璃基板或单晶硅基板不同的非常薄的低成本薄膜集成电路，以及薄膜集成电路器件的结构或工艺 或使用薄膜集成电路的IC芯片。 解决方案：在硅衬底的任一表面上形成第一绝缘膜，在上述第一绝缘层上形成具有至少两个薄膜集成电路的层，树脂层形成在具有 在上述薄膜集成电路之上，在上述树脂层上形成膜，利用具有上述硅衬底的上述薄膜集成电路的层对表面的后面进行研磨，并且将上述硅衬底的接地表面抛光 。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006237581A

公开(公告)日：2006-09-07

申请号：JP2006013539

申请日：2006-01-23

Applicant: Semiconductor Energy Lab Co Ltd ,  株式会社半導体エネルギー研究所

Inventor： TSURUME TAKUYA

IPC: H01L21/822 ,  G06K19/07 ,  G06K19/077 ,  H01L21/02 ,  H01L21/336 ,  H01L25/00 ,  H01L27/04 ,  H01L27/12 ,  H01L29/786 ,  H01Q1/38 ,  H05K1/16

CPC classification number: H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device having a conductive film capable of sufficiently functioning as an antenna and a method of fabricating the semiconductor device. SOLUTION: The semiconductor device has an element formation layer including a transistor provided on a substrate, an insulating film provided on the element formation layer, and conductive films provided on the insulating film and adapted to function as an antenna, wherein the transistor and the conductive films are electrically connected and the insulating film has grooves, the conductive films being provided along the surface and grooves of the insulating film. In addition, the grooves formed in the insulating film may be provided to penetrate the insulating film, or may be provided to form recesses on the insulating film without penetrating the insulating film. The grooves may be optionally structured; for example, it may be provided to have a tapered shape etc. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种具有能够充分发挥天线的导电膜的半导体器件和制造半导体器件的方法。 解决方案：半导体器件具有包括设置在基板上的晶体管，设置在元件形成层上的绝缘膜和设置在绝缘膜上并适于用作天线的导电膜的元件形成层，其中晶体管 并且导电膜电连接并且绝缘膜具有凹槽，导电膜沿绝缘膜的表面和沟槽设置。 此外，可以提供形成在绝缘膜中的沟槽以穿透绝缘膜，或者可以设置成在绝缘膜上形成凹槽而不穿透绝缘膜。 凹槽可以是任意构造的; 例如，可以设置为具有锥形等。版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2006114025A

公开(公告)日：2006-04-27

申请号：JP2005266403

申请日：2005-09-14

Applicant: Semiconductor Energy Lab Co Ltd ,  株式会社半導体エネルギー研究所

Inventor： TSURUME TAKUYA ,  ORIKI KOJI ,  KUSUMOTO NAOTO

IPC: G06K19/077 ,  G06K19/07 ,  H01L23/00 ,  H01L23/04

CPC classification number: H01L24/83 ,  H01L24/95 ,  H01L2924/14 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a wireless chip that can be used without being attached to a product and to specifically provide the wireless chip that adds a new function to the wireless chip by sealing an integrated circuit and a manufacturing method of the same. SOLUTION: The wireless chip has a structure in which the integrated circuit is encompassed by films. In particular, the films sealing the integrated circuit have a hollow structure; therefore the new function is added to the wireless chip. By employing the hollow structure, the wireless chip can be configured so that, for example, an inert gas, an inert liquid or an inert gel is encapsulated in a hollow portion. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种无需连接到产品即可使用的无线芯片，并且具体地提供通过密封集成电路向无线芯片添加新功能的无线芯片及其制造方法 相同。 解决方案：无线芯片具有集成电路被膜包围的结构。 特别地，密封集成电路的膜具有中空结构; 因此新功能被添加到无线芯片。 通过采用中空结构，无线芯片可以被构造成使得例如惰性气体，惰性液体或惰性凝胶被封装在中空部分中。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2006049877A

公开(公告)日：2006-02-16

申请号：JP2005198485

申请日：2005-07-07

Applicant: Semiconductor Energy Lab Co Ltd ,  株式会社半導体エネルギー研究所

Inventor： TSURUME TAKUYA ,  ORIKI KOJI ,  KUSUMOTO NAOTO

IPC: H01L27/12 ,  G06K19/07 ,  G06K19/077 ,  H01L21/02 ,  H01L21/301 ,  H01L21/304

CPC classification number: H01L2924/14

Abstract: PROBLEM TO BE SOLVED: To provide thin IC chips by enabling mass production of IC chips to lower a unit cost thereof. SOLUTION: This method enables mass production and lowers a unit cost of IC chips by using no silicon substrate and using a substrate such as a glass substrate on which no restriction is imposed in size. Furthermore, the thin IC chips is obtained by grinding and polishing the substrates such as glass substrates. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：通过实现IC芯片的批量生产来降低其单位成本来提供薄的IC芯片。 解决方案：该方法能够批量生产，并且通过使用无硅衬底和使用其上不限制尺寸的诸如玻璃衬底的衬底来降低IC芯片的单位成本。 此外，通过对诸如玻璃基板的基板进行研磨和抛光来获得薄的IC芯片。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005178363A

公开(公告)日：2005-07-07

申请号：JP2004314145

申请日：2004-10-28

Applicant: Semiconductor Energy Lab Co Ltd ,  株式会社半導体エネルギー研究所

Inventor： TAKAYAMA TORU ,  GOTOU YUUGO ,  FUKUMOTO YUMIKO ,  MARUYAMA JUNYA ,  TSURUME TAKUYA

IPC: H05B33/10 ,  B32B7/12 ,  G09F9/30 ,  H01L23/02 ,  H01L29/786 ,  H01L51/50 ,  H05B33/14 ,  H05B33/22

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device which has a lightweight/highly reliable sealing structure which shuts off impurities finding their way into the device, typically, moisture as a factor for undermining the properties of an element, and a method for manufacturing this semiconductor device. SOLUTION: In this method for manufacturing the semiconductor device, a protecting film with high gas barrier properties(a protecting film with high gas barrier properties which is feared that would inflict any damage to the element, in case the film is formed directly on the element), is previously formed on another heat-resistant substrate and the protecting film is transferred to a substrate with the element to seal them. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种具有轻质/高可靠性的密封结构的半导体器件，该密封结构将杂质排除在器件中，通常是作为破坏元件性质的因素的水分，以及方法 用于制造该半导体器件。 解决方案：在制造半导体器件的这种方法中，具有高阻气性的保护膜（在直接形成膜的情况下，担心会对元件造成任何损害的高阻气性的保护膜 在元件上）预先形成在另一耐热基板上，并且将保护膜转移到具有元件的基板以将其密封。 版权所有（C）2005，JPO＆NCIPI