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    Production method and the capacitor dielectric film
    4.
    发明专利
    Production method and the capacitor dielectric film 有权

    公开(公告)号：JP4983134B2

    公开(公告)日：2012-07-25

    申请号：JP2006204910

    申请日：2006-07-27

    Applicant: Tdk株式会社

    Inventor： 清志 内田 ,  賢治 堀野 ,  仁 齋田

    IPC: H01G4/33 ,  H01G4/12

    Abstract: PROBLEM TO BE SOLVED: To provide a capacitor provided with a dielectric film capable of exhibiting a sufficiently high dielectric constant and to provide a method of fabricating a dielectric film capable of producing a dielectric film while sufficiently suppressing oxidization of a metal layer to cause a sufficiently high dielectric constant to come out. SOLUTION: The capacitor 100 has a dielectric film 1 and a first electrode 2 and a second electrode 3 provided oppositely while sandwiching the dielectric film 1, wherein the dielectric film 1 has a density in excess of 72% of a theoretical density calculated on the basis of a lattice constant, and at least one of the first electrode 2 and the second electrode 3 contains at least one metal selected from the group consisting of Cu, Ni, Al, stainless steel and Inconel (trade mark). COPYRIGHT: (C)2007,JPO&INPIT

    Forming method and thin film dielectric element of the thin-film dielectric element laminate
    9.
    发明专利
    Forming method and thin film dielectric element of the thin-film dielectric element laminate 有权

    公开(公告)号：JP4923756B2

    公开(公告)日：2012-04-25

    申请号：JP2006157558

    申请日：2006-06-06

    Applicant: Tdk株式会社

    Inventor： 賢治 堀野 ,  仁 齋田

    IPC: H01G4/33 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/105

    Abstract: PROBLEM TO BE SOLVED: To provide a method of forming a smooth dielectric thin film by an MOD method while preventing oxidation of an electrode even if inexpensive Cu, Ni or Al is used as the electrode, and to provide a thin-film dielectric element employing the smooth dielectric thin film. SOLUTION: This forming method of a laminate for a thin-film dielectric element includes an electrode forming process of forming a lower electrode layer 2 containing at least one or more kinds of Cu, Ni and Al as a main component on a substrate 1, a material liquid applying process of applying a material liquid containing an organic dielectric material onto the surface of the electrode layer 2, and a thermal decomposition process of thermally decomposing the organic dielectric material in the material liquid applied on the surface of the electrode 2 to form a metal oxide thin film. The thermal decomposition process includes a step of heating the material liquid applied on the surface of the electrode 2 at a temperature-rise speed of not more than 3°C/min in a reductive atmosphere, and the conditions of the reductive atmosphere is pO 2 COPYRIGHT: (C)2008,JPO&INPIT

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