Semiconductor device
    10.
    发明专利
    Semiconductor device 有权
    半导体器件

    公开(公告)号:JP2014090135A

    公开(公告)日:2014-05-15

    申请号:JP2012240455

    申请日:2012-10-31

    Abstract: PROBLEM TO BE SOLVED: To provide a highly-reliable semiconductor device having an excellent heat radiation property of a heating element, and that can resolve a problem that the bonding strength between the heating element and a substrate is reduced due to a stress caused by a difference in thermal expansion rate between the heating element and the substrate generated at cooling of a high heat conductivity film after thermosetting and in a heat history after assembly, and that can resolve a problem that the heat resistance of the film is insufficient.SOLUTION: A semiconductor device 1 comprises: a heating element 2; a heat receiving unit 3; and a high heat conduction layer 4 provided between the heating element 2 and the heat receiving unit 3 and transferring heat from the heating element to the heat receiving unit. The high heat conduction layer 4 is a thermally cured body of a high heat conduction film containing (A) two or more kinds of thermoset resins containing a polyether compound having a phenyl group to which at least a vinyl group having specific structure is coupled, at both ends; (B) a thermoplastic elastomer; (C) a heat conductive inorganic filler; and (D) a hardener. The thickness of the high heat conduction layer is 10-300 μm.

    Abstract translation: 要解决的问题:提供一种具有优异的加热元件的散热特性的高可靠性的半导体器件,并且可以解决由于加热元件和基板之间的应力导致的加热元件和基板之间的接合强度降低的问题 热固化后的热传导性膜冷却后的加热元件与基板之间的热膨胀率的差异以及组装后的热历史,可以解决膜的耐热性不足的问题。解决方案:A 半导体器件1包括:加热元件2; 热接收单元3; 以及设置在加热元件2和受热单元3之间并将热量从加热元件传递到热接收单元的高导热层4。 高导热层4是含有(A)两种或更多种含有至少具有特定结构的乙烯基连接的苯基的聚醚化合物的热固性树脂的高导热膜的热固化体, 两端 (B)热塑性弹性体; (C)导热性无机填料; 和(D)硬化剂。 高导热层的厚度为10-300μm。

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