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    Electrode, method for forming the same, and semiconductor device
    2.
    发明专利
    Electrode, method for forming the same, and semiconductor device 有权
    电极，其形成方法和半导体器件

    公开(公告)号：JP2009293082A

    公开(公告)日：2009-12-17

    申请号：JP2008147717

    申请日：2008-06-05

    申请人： Sony Corp ,  ソニー株式会社

    发明人： ISHIHARA HIROSHI ,  TANAKA MASANOBU ,  KAMEI TAKAHIRO

    IPC分类号： C23C18/18 ,  H01L21/288 ,  H01L21/336 ,  H01L29/417 ,  H01L29/786

    CPC分类号： C23C18/1642 ,  C23C18/1893

    摘要： PROBLEM TO BE SOLVED: To provide an electrode of which the kind of Si and a metal layer is not limited and the metal layer is not peeled off even by removal treatment for an oxide film of Si; a method for forming the electrode; and a semiconductor device having the electrode.
    SOLUTION: This forming method includes the steps of; forming a thin film of an organic molecular 12a which has any of a CH group, a CH
    2 group and a CH
    3 group at a first end and any of an amino group, a mercapto group, a phenyl group and a carboxyl group at a second end, on a substrate 11 having Si which has been subjected to an activation treatment, on its surface; imparting a catalytic metal 12b to the surface of the organic molecular film 12a; and forming the metal layer 13 on the surface of an adherent layer 12 which is the organic molecular film 12a having the catalytic metal 12b imparted thereon, with an electroless plating technique.
    COPYRIGHT: (C)2010,JPO&INPIT

    摘要翻译： 要解决的问题：提供一种不限制Si和金属层的种类的电极，即使通过Si的氧化膜的去除处理也不会剥离金属层; 电极形成方法; 以及具有电极的半导体器件。 解决方案：该成型方法包括以下步骤： 在第一端形成具有CH基团，CH 2 基团和CH 3 基团中任何一个的有机分子12a的薄膜，并且任何氨基 ，在第二端的巯基，苯基和羧基，在其表面上具有进行了活化处理的Si的基板11上; 将催化金属12b赋予有机分子膜12a的表面; 并且通过化学镀技术在作为赋予了催化金属12b的有机分子膜12a的粘附层12的表面上形成金属层13。 版权所有（C）2010，JPO＆INPIT

    Bipolar electroless processing method
    3.
    发明专利
    Bipolar electroless processing method 审中-公开
    双极电解处理方法

    公开(公告)号：JP2009001897A

    公开(公告)日：2009-01-08

    申请号：JP2008122447

    申请日：2008-05-08

    申请人： Interuniv Micro Electronica Centrum Vzw ,  アンテルユニヴェルシテール・ミクロ−エレクトロニカ・サントリュム・ヴェー・ゼッド・ドゥブルヴェInteruniversitair Micro−Elektronica Centrum Vzw

    发明人： VEREECKEN PHILIPPE M

    IPC分类号： C23C18/16 ,  H01L21/288

    CPC分类号： C23C18/1671 ,  C23C18/1605 ,  C23C18/1642 ,  C23C18/1667

    摘要： PROBLEM TO BE SOLVED: To provide bipolar electroless processing methods which do not have the drawbacks of the related art techniques.
    SOLUTION: A bipolar photo-electrochemical process is disclosed for electroless deposition (referred to as photo Bi-OCD) of a metallic compound onto the top surface of a semiconducting substrate whereby differential illumination of the front side of the substrate versus the back side of the substrate provides a driving force to separate the cathodic and anodic partial reactions leading to high yield deposition of the metallic compound. A selective photo Bi-OCD process is further disclosed whereby the top surface of the substrate is at least partly covered with an insulating pattern such that the deposition of the metallic compound takes place selectively in the openings of the pattern.
    COPYRIGHT: (C)2009,JPO&INPIT

    摘要翻译： 要解决的问题：提供不具有现有技术的缺点的双极无电解处理方法。 解决方案：公开了一种双极光电化学方法，其用于在半导体衬底的顶表面上的金属化合物的无电沉积（称为Bi-OCD），从而使衬底的前侧与背面的差分照明 衬底的一侧提供分离阴极和阳极部分反应的驱动力，导致金属化合物的高产率沉积。 进一步公开了一种选择性照片Bi-OCD工艺，由此衬底的顶表面至少部分地被绝缘图案覆盖，使得金属化合物的沉积选择性地发生在图案的开口中。 版权所有（C）2009，JPO＆INPIT

    Manufacturing method of semiconductor device
    5.
    发明专利
    Manufacturing method of semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号：JP2011165810A

    公开(公告)日：2011-08-25

    申请号：JP2010025464

    申请日：2010-02-08

    申请人： Mitsubishi Electric Corp ,  三菱電機株式会社

    发明人： NISHIZAWA KOICHIRO

    IPC分类号： H01L21/288 ,  C23C18/42 ,  H01L21/28

    CPC分类号： H01L21/76898 ,  C23C18/1642 ,  C23C18/168 ,  C23C18/1692 ,  C23C18/1872 ,  C23C18/1879 ,  C23C18/42 ,  C23C18/44 ,  H01L21/288 ,  H01L21/6835 ,  H01L29/452 ,  H01L2221/6834

    摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of semiconductor device in which a metal film with high coating properties and adhesive force can be formed at low cost on a semiconductor substrate. SOLUTION: The GaAs substrate 16 (semiconductor substrate) is immersed in Pd, causing activation of a liquid 28 (palladium chloride) containing Pd ions, and Pd catalyst 30 is made to adhere to a surface of the GaAs substrate. The Pd catalyst and the GaAs substrate react and a mix layer 40 of Pd-Ga-As is formed. Next, the GaAs substrate to which the Pd catalyst is made to adhere to the surface is immersed in Pd electroless plating solution 42, and a Pd plated film 44 is formed on the GaAs substrate. COPYRIGHT: (C)2011,JPO&INPIT

    摘要翻译： 要解决的问题：提供一种半导体器件的制造方法，其中可以以低成本在半导体衬底上形成具有高涂层性能和粘合力的金属膜。 解决方案：将GaAs衬底16（半导体衬底）浸入Pd中，引起含有Pd离子的液体28（氯化钯）的活化，并使Pd催化剂30附着在GaAs衬底的表面上。 Pd催化剂和GaAs衬底反应，形成Pd-Ga-As的混合层40。 接着，将Pd催化剂附着于表面的GaAs衬底浸渍在Pd化学镀溶液42中，在GaAs衬底上形成Pd镀膜44。 版权所有（C）2011，JPO＆INPIT

    Method of forming metal wiring for semiconductor device
    8.
    发明专利
    Method of forming metal wiring for semiconductor device 审中-公开
    形成金属接线用于半导体器件的方法

    公开(公告)号：JP2009038381A

    公开(公告)日：2009-02-19

    申请号：JP2008199181

    申请日：2008-08-01

    申请人： Samsung Electronics Co Ltd ,  三星電子株式会社Samsung Electronics Co.,Ltd.

    发明人： KIM HEA-KI ,  HUR DONG-CHUL ,  CHO MO-HYUN ,  KIM DUK-SUNG

    IPC分类号： H01L21/288 ,  C23C28/00 ,  C25D7/12 ,  H01L21/3205 ,  H01L21/768

    CPC分类号： H01L21/76873 ,  C23C18/1642 ,  C23C18/1806 ,  C23C18/1841 ,  C23C18/1844 ,  C23C18/54 ,  C25D5/02 ,  H01L21/2885 ,  H01L21/76849 ,  H01L21/76877

    摘要： PROBLEM TO BE SOLVED: To provide a method of forming metal wiring for a semiconductor device, which has a uniform thickness on a substrate by an electroplating process.
    SOLUTION: A metal-based layer 130 including a metal layer, a metal compound layer, or a mixture layer of these layers is formed on a substrate 100 having a conductive structure. Next, a metal seed layer 140 is formed on the metal containing layer 130, and a contact layer 150 made of a supplementary metal having an electrical resistance smaller than or equal to an electrical resistance of the metal seed layer is formed on the metal seed layer 140 along peripheral portions of the substrate 100. Then, the substrate 100 is loaded into an electroplating apparatus such that the contact layer 150 is in contact with a cathode electrode 540, and the metal seed layer 140 is electroplated to form a metal wiring layer on the metal containing layer 130.
    COPYRIGHT: (C)2009,JPO&INPIT

    摘要翻译： 要解决的问题：提供一种通过电镀工艺在基板上形成具有均匀厚度的用于半导体器件的金属布线的方法。 解决方案：在具有导电结构的基板100上形成包括金属层，金属化合物层或这些层的混合层的金属基层130。 接下来，在含金属层130上形成金属籽晶层140，在金属种子层上形成由金属种子层的电阻小于或等于电阻的补充金属制成的接触层150 然后，将基板100装载到电镀设备中，使得接触层150与阴极电极540接触，并且电镀金属晶种层140以形成金属布线层 含金属层130.版权所有（C）2009，JPO＆INPIT