公开(公告)号：JP5367264B2

公开(公告)日：2013-12-11

申请号：JP2007518159

申请日：2005-06-20

Applicant: マイクロソフト コーポレーション

Inventor： ドリス、ブルース、ビー ,  ユン、メイケイ ,  ノーヴァク、エドワード、ジェイ ,  ヤン、ミン

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/20 ,  H01L21/265 ,  H01L21/762 ,  H01L21/8238 ,  H01L21/84 ,  H01L29/04 ,  H01L29/76 ,  H01L29/786

CPC classification number: H01L21/76251 ,  H01L21/76243 ,  H01L21/823807 ,  H01L21/823878 ,  H01L21/84 ,  H01L29/045 ,  H01L29/785

Abstract: A hybrid substrate having a high-mobility surface for use with planar and/or multiple-gate metal oxide semiconductor field effect transistors (MOSFETs) is provided. The hybrid substrate has a first surface portion that is optimal for n-type devices, and a second surface portion that is optimal for p-type devices. Due to proper surface and wafer flat orientations in each semiconductor layers of the hybrid substrate, all gates of the devices are oriented in the same direction and all channels are located on the high mobility surface. The present invention also provides for a method of fabricating the hybrid substrate as well as a method of integrating at least one planar or multiple-gate MOSFET thereon.

公开(公告)号：JP5085010B2

公开(公告)日：2012-11-28

申请号：JP2005068158

申请日：2005-03-10

Applicant: 三星モバイルディスプレイ株式會社Samsung Mobile Display Co., Ltd.

Inventor： 昌樹 金 ,  泰旭 姜 ,  倉龍 鄭 ,  栽榮 ▲呉▼ ,  商一 朴 ,  誠模 徐

IPC: G02F1/1368 ,  H01L21/336 ,  G02F1/136 ,  G09F9/30 ,  H01L21/00 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/32 ,  H01L29/04 ,  H01L29/10 ,  H01L29/15 ,  H01L29/745 ,  H01L29/76 ,  H01L29/786 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L51/52

CPC classification number: H01L29/78603 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/3262 ,  H01L51/5284

公开(公告)号：JP5042452B2

公开(公告)日：2012-10-03

申请号：JP2004350530

申请日：2004-12-03

Applicant: アルカテル−ルーセント ユーエスエー インコーポレーテッド

Inventor： バオ ゼナン

IPC: H01L29/786 ,  H01L51/05 ,  H01L21/336 ,  H01L21/338 ,  H01L29/76 ,  H01L29/78 ,  H01L29/812 ,  H01L51/00 ,  H01L51/30 ,  H01L51/40

CPC classification number: H01L51/0541 ,  H01L51/0012 ,  H01L51/0036 ,  H01L51/0537 ,  H01L51/0558

公开(公告)号：JP5025071B2

公开(公告)日：2012-09-12

申请号：JP2002555085

申请日：2001-02-01

Applicant: 三菱電機株式会社

Inventor： 勝光 中村 ,  秀城 中村 ,  茂 楠

IPC: H01L29/78 ,  H01L21/331 ,  H01L21/336 ,  H01L29/06 ,  H01L29/08 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L29/49 ,  H01L29/739 ,  H01L29/76

CPC classification number: H01L29/402 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/407 ,  H01L29/4232 ,  H01L29/4238 ,  H01L29/456 ,  H01L29/495 ,  H01L29/4958 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7802 ,  H01L29/7813

Abstract: A semiconductor device of the present invention is provided with a power device which has a semiconductor substrate having a first main surface and a second main surface that are opposed to each other and an insulating gate structure on the first main surface side, wherein a main current flows between the first main surface and the second main surface, that is to say, is provided with an insulating gate type MOS transistor structure wherein the thickness (t1) of the semiconductor substrate is no less than 50 mu m and no greater than 250 mu m and a low ON voltage and a high withstanding capacity against breakdown are implemented in the first main surface. Thereby, a low ON voltage, the maintaining of the withstanding capacity against breakdown and the reduction of a switching loss on the high voltage side can be implemented.

公开(公告)号：JP2012169650A

公开(公告)日：2012-09-06

申请号：JP2012089822

申请日：2012-04-11

Applicant: Siliconix Inc ,  シリコニックス・インコーポレイテッドSiliconix Incorporated

Inventor： WILLIAMS RICHARD K

IPC: H01L27/04 ,  H01L29/76 ,  H01L21/329 ,  H01L21/336 ,  H01L21/822 ,  H01L21/8234 ,  H01L27/02 ,  H01L27/06 ,  H01L27/088 ,  H01L29/10 ,  H01L29/78 ,  H01L29/861 ,  H01L29/94 ,  H02M3/158 ,  H02M7/217 ,  H03K17/695

CPC classification number: H01L29/7813 ,  H01L27/0248 ,  H01L29/1087 ,  H01L29/861 ,  H02M3/1588 ,  H02M7/217 ,  Y02B70/1466

Abstract: PROBLEM TO BE SOLVED: To provide a MOSFET switch suitable for use as a synchronous rectifier in a power converter.SOLUTION: An N-channel power MOSFET with its source and body connected together and biased at a high positive voltage with respect to its drain is fabricated. A gate is controlled by a switch (1184) which selectively connects the gate to the source or to a voltage (VCP) enough to turn a channel of the MOSFET fully on. When the gate is connected to the source, the device functions as a "pseudo-Schottky" diode which turns on at a lower voltage and has a lower conductor resistance than a conventional PN junction. When the gate is connected to the positive voltage the channel of the MOSFET is turned fully on. This MOSFET switch reduces power loss and stored charge in the "break-before-make" time.

Abstract translation: 要解决的问题：提供一种适用于功率转换器中的同步整流器的MOSFET开关。 解决方案：制造其源极和主体连接在一起并相对于其漏极偏置在高正电压的N沟道功率MOSFET。 栅极由开关（1184）控制，开关选择性地将栅极连接到源极或者将电压（VCP）足以使MOSFET的通道完全导通。 当栅极连接到源极时，该器件用作“伪肖特基”二极管，其在较低电压下导通，并且具有比常规PN结更低的导体电阻。 当栅极连接到正电压时，MOSFET的通道完全导通。 该MOSFET开关在“断开”制造时间内减少了功率损耗和存储电荷。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP4920862B2

公开(公告)日：2012-04-18

申请号：JP2002560197

申请日：2002-01-03

Applicant: エイチアールエル ラボラトリーズ,エルエルシーHrl Laboratories, Llc

Inventor： クラーク，ウィリアム，エム．，ジェイアール． ,  チョウ，ラップ−ワイ ,  バウクス，ジェイムス，ピー．

IPC: H01L23/52 ,  H01L27/04 ,  H01L21/3205 ,  H01L21/822 ,  H01L21/8238 ,  H01L23/58 ,  H01L27/02 ,  H01L27/10 ,  H01L29/76

CPC classification number: H01L23/573 ,  H01L27/0203 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：JP4852694B2

公开(公告)日：2012-01-11

申请号：JP2004058110

申请日：2004-03-02

Applicant: 独立行政法人産業技術総合研究所

Inventor： 明植 昌原 ,  永▼勲▲ 柳 ,  賢一 石井 ,  英一 鈴木 ,  敏弘 関川

IPC: H01L27/00 ,  H01L27/08 ,  H01L21/02 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/84 ,  H01L27/088 ,  H01L27/092 ,  H01L27/12 ,  H01L29/423 ,  H01L29/76 ,  H01L29/786

CPC classification number: H01L29/785 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/42384 ,  H01L29/66795 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：JP4846239B2

公开(公告)日：2011-12-28

申请号：JP2004560826

申请日：2003-12-10

Applicant: エイチアールエル ラボラトリーズ,エルエルシーHrl Laboratories, Llc ,  レイソン カンパニー

Inventor： クラーク，ウィリアム，エム．，ジェイアール． ,  チョウ，ラップ−ワイ ,  ハービソン，ガヴィン，ジェイ． ,  バウクス，ジェイムズ，ピー．

IPC: H01L27/04 ,  H01L21/822 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/02 ,  H01L27/088 ,  H01L29/76

CPC classification number: H01L21/823892 ,  H01L27/02

公开(公告)号：JP4841114B2

公开(公告)日：2011-12-21

申请号：JP2004119697

申请日：2004-04-15

IPC: H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L21/316 ,  H01L29/49 ,  H01L29/51 ,  H01L29/76

公开(公告)号：JP4819994B2

公开(公告)日：2011-11-24

申请号：JP2000512288

申请日：1998-09-17

Applicant: クコー ピーティーワイ リミテッド

Inventor： ブルース カン

IPC: G01N24/00 ,  H01L29/66 ,  B82Y10/00 ,  G06F7/00 ,  G06N99/00 ,  H01L29/06 ,  H01L29/76

CPC classification number: G06N99/002 ,  B82Y10/00 ,  H01L29/7613 ,  Y10S977/933