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    Method for Improving the Performance of the Energy Management in a Nearly Zero Energy Building
    3.
    发明申请
    Method for Improving the Performance of the Energy Management in a Nearly Zero Energy Building 有权

    公开(公告)号：US20210254848A1

    公开(公告)日：2021-08-19

    申请号：US16792936

    申请日：2020-02-18

    Applicant: Aristotle University of Thessaloniki-Research Committee E.L.K.E.

    Inventor： Christos Mademlis ,  Nikolaos Jabbour ,  Evangelos Tsioumas

    IPC: F24F11/47 ,  H02J7/00 ,  G05B19/04 ,  H02J3/00 ,  F24F11/50 ,  F24F11/88 ,  G05F1/66

    Abstract: An optimal energy management method and a system that implements the method for a nearly zero energy building (nZEB) based on the genetic algorithm technique that can provide an optimal balance between the objectives of energy saving, comfort of the building residents and maximum exploitation of the generated electric energy by the renewable energy sources through the proper utilization of a battery storage system, is developed in this invention. The above can be attained by minimizing a cost function that considers the real-time electricity price, the generated/consumed electric energy by each device, the user preferences, the state-of-charge and the energy price of the battery storage system (BSS), and the weather forecast. the system that implements the optimal energy management method comprises energy and temperature sensors, controllable power switches, a battery storage system and a controller with human machine interface. The outcomes of the energy management system are control signals that regulate the operation of the power switches and the inverter of the battery storage system.

    Integrated plasmonic modulator
    9.
    发明授权
    Integrated plasmonic modulator 有权

    公开(公告)号：US12189262B2

    公开(公告)日：2025-01-07

    申请号：US17617603

    申请日：2019-06-10

    Applicant: Mellanox Technologies, Ltd. ,  ETH ZURICH ,  ARISTOTLE UNIVERSITY OF THESSALONIKI

    Inventor： Claudia Hoessbacher ,  Juerg Leuthold ,  Elad Mentovich ,  Paraskevas Bakopoulos ,  Dimitrios Kalavrouziotis ,  Dimitrios Tsiokos

    IPC: G02F1/225 ,  G02F1/21 ,  H01L21/768

    Abstract: An optoelectronic device (20) includes thin film structures (56) disposed on a semiconductor substrate (54) and patterned to define components of an integrated drive circuit, which is configured to generate a drive signal. A back end of line (BEOL) stack (42) of alternating metal layers (44, 46) and dielectric layers (50) is disposed over the thin film structures. The metal layers include a modulator layer (48), which contains a plasmonic waveguide (36, 99, 105) and a plurality of electrodes (30, 32, 34, 96, 98, 106), which apply a modulation to surface plasmons polaritons (SPPs) propagating in the plasmonic waveguide in response to the drive signal. A plurality of interconnect layers are patterned to connect the thin film structures to the electrodes. An optical input coupler (38, 82) is configured to couple light into the modulator layer, whereby the light is modulated by the modulation of the SPPs, and an optical output coupler (38, 82) is configured to couple the modulated light out of the modulator layer.

    Integrated Plasmo-Photonic Biosensor and Method of Use
    10.
    发明申请
    Integrated Plasmo-Photonic Biosensor and Method of Use 审中-公开

    公开(公告)号：US20200003696A1

    公开(公告)日：2020-01-02

    申请号：US16486871

    申请日：2018-02-20

    Applicant: Aristotle University of Thessaloniki-Research Committee E.L.K.E ,  AMO GmbH Gesellschaft für Angewandte Mikro- und Optoelektronic Mit Beschränkter Haftung

    Inventor： Nikolaos Pleros ,  Dimitrios Tsiokos ,  Georgios Ntampos ,  Dimitra Ketzaki ,  Anna-Lena Giesecke

    IPC: G01N21/77 ,  G01N1/22

    Abstract: The invention relates to a device comprising a first optical Mach-Zehnder interferometric sensor (MZI1) with a large FSR, wherein a plasmonic waveguide (107) thin-film or hybrid slot, is incorporated as transducer element planar integrated on Si3N4 photonic waveguides and a second optical interferometric Mach-Zehnder (MZI2), both comprising thermo-optic phase shifters (104, 106) for optimally biasing said MZI sensor (MZI1) and MZI as variable optical attenuator VOA. It further comprises an overall chip (112), being remarkable in that it comprises a set of Photonic waveguides (103) with a high index silicon nitride strip (303, 603), which is sandwiched between a low index oxide substrate (Si02) and a low index oxide superstrate (LTO); Optical coupling structures (102, 109) at both ends of the sensor acting as the optical I/Os; an Optical splitter (102) and an optical combiner (109) for optical splitting at the first junction (102) of said first sensor (MZI1) and optical combining at the second junction (109) of said first MZI (MZI1); a variable optical attenuator (VOA) with said additional second MZI (MZI2), which is nested into said MZI1 (sensor)), deploying an optical splitter and an optical combiner for optical splitting at the first junction of said additional second MZI (MZI2), and optical combining at the second junction of said second MZI (MZI2); a set of Thermo-optic phase shifters (104, 106) to tune the phase of the optical signal in the reference arm (104, 106) of each said MZI (MZI1, MZI2-VOA); wherein Thermo-optic phase shifters are formed by depositing two metallic stripes parallel to each other on top of a section of the photonic waveguide and along the direction of propagation of light; and a plasmonic waveguide (107) in the upper branch (103) of said first MZI (MZI1), that confines light propagation through coupling

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