公开(公告)号：US07351663B1

公开(公告)日：2008-04-01

申请号：US11169176

申请日：2005-06-27

申请人： Alex Kabansky ,  Hean-Cheal Lee ,  Sundar Narayanan ,  Prabhuram Gopalan ,  Vinay Krishna

发明人： Alex Kabansky ,  Hean-Cheal Lee ,  Sundar Narayanan ,  Prabhuram Gopalan ,  Vinay Krishna

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/28247 ,  H01L21/02071 ,  H01L21/28061 ,  H01L21/32138

摘要： A method of removing a defect from a gate stack on a substrate, comprises treating the gate stack with a plasma. The plasma comprises fluorine, the gate stack comprises a gate layer and a metallic layer, and substantially no photoresist is present on the substrate.

摘要翻译： 从衬底上的栅极堆叠中去除缺陷的方法包括用等离子体处理栅极堆叠。 等离子体包括氟，栅极堆叠包括栅极层和金属层，并且基板上基本上不存在光致抗蚀剂。

公开(公告)号：US20110265823A1

公开(公告)日：2011-11-03

申请号：US13184475

申请日：2011-07-15

申请人： Mike Ravkin ,  Alex Kabansky ,  John de Larios

发明人： Mike Ravkin ,  Alex Kabansky ,  John de Larios

IPC分类号： B08B3/08

CPC分类号： B08B3/04 ,  H01L21/67028 ,  H01L21/67051 ,  Y10S134/902

摘要： A method for processing a substrate is provided. The method includes generating a controlled meniscus using a proximity head. The proximity head has a face in close proximity to a surface of the substrate, and the face includes a substantially flat surface. The controlled meniscus is generated by delivering a chemical to the meniscus through discrete nozzles formed in the face of the proximity head. The method includes moving the proximity head over the substrate so that an area of contact between the meniscus and the surface of the substrate moves from a first location to a second location on the substrate. The moving of the proximity head causes a chemical remainder to be left behind on the surface of the substrate at the first location. The chemical remainder being a layer of the chemical from the meniscus that adheres to the surface of the substrate. The method also includes balancing an amount of chemical being delivered to the proximity head with an amount of chemical removed from the meniscus so that the meniscus maintains a substantially constant volume of the chemical. The amount of chemical removed from the meniscus includes at least the chemical remainder left behind on the surface of the substrate.

摘要翻译： 提供了一种处理基板的方法。 该方法包括使用接近头来产生受控弯液面。 接近头部具有紧邻基板的表面的面，并且该面部包括基本平坦的表面。 通过在邻近头部的表面形成的分立喷嘴将化学物质递送到弯液面来产生受控弯月面。 该方法包括将接近头移动到衬底上，使得弯月面和衬底表面之间的接触区域从衬底上的第一位置移动到第二位置。 靠近头部的移动导致在第一位置处在基底表面上留下化学残留物。 化学残留物是粘附于基底表面的来自弯液面的化学物质层。 该方法还包括将递送到邻近头部的化学物质量与从弯月面移除的化学物质的量进行平衡，使得弯月面维持化学品的基本上恒定的体积。 从弯液面去除的化学物质的量至少包括留在衬底表面上的化学残留物。

公开(公告)号：US20080266367A1

公开(公告)日：2008-10-30

申请号：US11774542

申请日：2007-07-06

申请人： Mike Ravkin ,  Alex Kabansky ,  John de Larios

发明人： Mike Ravkin ,  Alex Kabansky ,  John de Larios

IPC分类号： B41J2/175

CPC分类号： B08B3/04 ,  H01L21/67028 ,  H01L21/67051 ,  Y10S134/902

摘要： A system for processing a substrate is described. The system includes a proximity head, a mechanism, and a liquid supply. The proximity head is configured to generate a controlled meniscus. Specifically, the proximity head has a plurality of dispensing nozzles formed on a face of the proximity head. The dispensing nozzles are configured to supply a liquid to the meniscus and the suction holes are added to remove a used liquid from the meniscus. The mechanism moves the proximity head or the substrate with respect to each other while maintaining contact between the meniscus and a surface of the substrate. The movement causes a thin layer of the liquid to remain on the surface after being contacted by the meniscus. The liquid supply is in fluid communication with the dispensing nozzles, and is configured to balance an amount of the liquid delivered to the meniscus with an amount of liquid removed from the meniscus, the amount of liquid removed from the meniscus including at least the thin layer of the liquid remaining on the surface of the substrate.

摘要翻译： 描述用于处理衬底的系统。 该系统包括接近头，机构和液体供应。 邻近头部被配置为产生受控弯液面。 具体而言，邻近头部具有形成在邻近头部的表面上的多个分配喷嘴。 分配喷嘴被配置为向弯月面供应液体，并且添加吸入孔以从弯月面去除使用过的液体。 该机构相对于彼此移动邻近头部或衬底，同时保持弯月面和衬底的表面之间的接触。 该运动导致薄层的液体在与弯液面接触之后保留在表面上。 液体供应与分配喷嘴流体连通，并且被配置为平衡输送到弯液面的液体量与从弯月面移除的液体量，从弯液面移除的液体量至少包括薄层 残留在基材表面上的液体。

公开(公告)号：US08313580B2

公开(公告)日：2012-11-20

申请号：US13184475

申请日：2011-07-15

申请人： Mike Ravkin ,  Alex Kabansky ,  John de Larios

发明人： Mike Ravkin ,  Alex Kabansky ,  John de Larios

IPC分类号： B08B3/04 ,  B08B5/04

CPC分类号： B08B3/04 ,  H01L21/67028 ,  H01L21/67051 ,  Y10S134/902

摘要： A method for processing a substrate is provided. The method includes generating a controlled meniscus using a proximity head. The proximity head has a face in close proximity to a surface of the substrate, and the face includes a substantially flat surface. The controlled meniscus is generated by delivering a chemical to the meniscus through discrete nozzles formed in the face of the proximity head. The method includes moving the proximity head over the substrate so that an area of contact between the meniscus and the surface of the substrate moves from a first location to a second location on the substrate. The moving of the proximity head causes a chemical remainder to be left behind on the surface of the substrate at the first location. The chemical remainder being a layer of the chemical from the meniscus that adheres to the surface of the substrate. The method also includes balancing an amount of chemical being delivered to the proximity head with an amount of chemical removed from the meniscus so that the meniscus maintains a substantially constant volume of the chemical. The amount of chemical removed from the meniscus includes at least the chemical remainder left behind on the surface of the substrate.

摘要翻译： 提供了一种处理基板的方法。 该方法包括使用接近头来产生受控弯液面。 接近头部具有紧邻基板的表面的面，并且该面部包括基本平坦的表面。 通过在邻近头部的表面形成的分立喷嘴将化学物质递送到弯液面来产生受控弯月面。 该方法包括将接近头移动到衬底上，使得弯月面和衬底表面之间的接触区域从衬底上的第一位置移动到第二位置。 靠近头部的移动导致在第一位置处在基底表面上留下化学残留物。 化学残留物是粘附于基底表面的来自弯液面的化学物质层。 该方法还包括将递送到邻近头部的化学物质量与从弯月面移除的化学物质的量进行平衡，使得弯月面维持化学品的基本上恒定的体积。 从弯液面去除的化学物质的量至少包括留在衬底表面上的化学残留物。

公开(公告)号：US07997288B2

公开(公告)日：2011-08-16

申请号：US11774542

申请日：2007-07-06

申请人： Mike Ravkin ,  Alex Kabansky ,  John de Larios

发明人： Mike Ravkin ,  Alex Kabansky ,  John de Larios

IPC分类号： B08B3/00

CPC分类号： B08B3/04 ,  H01L21/67028 ,  H01L21/67051 ,  Y10S134/902

摘要： A system for processing a substrate is described. The system includes a proximity head, a mechanism, and a liquid supply. The proximity head is configured to generate a controlled meniscus. Specifically, the proximity head has a plurality of dispensing nozzles formed on a face of the proximity head. The dispensing nozzles are configured to supply a liquid to the meniscus and the suction holes are added to remove a used liquid from the meniscus. The mechanism moves the proximity head or the substrate with respect to each other while maintaining contact between the meniscus and a surface of the substrate. The movement causes a thin layer of the liquid to remain on the surface after being contacted by the meniscus. The liquid supply is in fluid communication with the dispensing nozzles, and is configured to balance an amount of the liquid delivered to the meniscus with an amount of liquid removed from the meniscus, the amount of liquid removed from the meniscus including at least the thin layer of the liquid remaining on the surface of the substrate.

摘要翻译： 描述用于处理衬底的系统。 该系统包括接近头，机构和液体供应。 邻近头部被配置为产生受控弯液面。 具体而言，邻近头部具有形成在邻近头部的表面上的多个分配喷嘴。 分配喷嘴被配置为向弯月面供应液体，并且添加吸入孔以从弯月面去除使用过的液体。 该机构相对于彼此移动邻近头部或衬底，同时保持弯月面和衬底的表面之间的接触。 该运动导致薄层的液体在与弯液面接触之后保留在表面上。 液体供应与分配喷嘴流体连通，并且被配置为平衡输送到弯液面的液体量与从弯月面移除的液体量，从弯液面移除的液体量至少包括薄层 残留在基材表面上的液体。

公开(公告)号：US06461972B1

公开(公告)日：2002-10-08

申请号：US09747638

申请日：2000-12-22

申请人： Alex Kabansky

发明人： Alex Kabansky

IPC分类号： H01L21302

CPC分类号： H01J37/32192 ,  H01J37/32082 ,  H01L21/31138

摘要： A dual plasma process generates a microwave neutral plasma remote from a semiconductor wafer and a radio frequency (RF) ionized plasma adjacent to the wafer for simultaneous application to the wafer. A first gas flows through a microwave plasma generation area, without a second gas in the gas flow, to generate the neutral microwave plasma. The second gas is added to the gas flow downstream of the microwave plasma generation area prior to an RF plasma generation area.

公开(公告)号：US06641698B2

公开(公告)日：2003-11-04

申请号：US10210365

申请日：2002-08-01

申请人： Alex Kabansky

发明人： Alex Kabansky

IPC分类号： H05H100

CPC分类号： H01J37/32192 ,  H01J37/32082 ,  H01L21/31138

摘要： A dual plasma process generates a microwave neutral plasma remote from a semiconductor wafer and a radio frequency (RF) ionized plasma adjacent to the wafer for simultaneous application to the wafer. A first gas flows through a microwave plasma generation area, without a second gas in the gas flow, to generate the neutral microwave plasma. The second gas is added to the gas flow downstream of the microwave plasma generation area prior to an RF plasma generation area.

公开(公告)号：US06346490B1

公开(公告)日：2002-02-12

申请号：US09543412

申请日：2000-04-05

申请人： Wilbur G. Catabay ,  Wei-Jen Hsia ,  Alex Kabansky

发明人： Wilbur G. Catabay ,  Wei-Jen Hsia ,  Alex Kabansky

IPC分类号： H01L2131

CPC分类号： H01L21/76814 ,  H01L21/31116 ,  H01L21/31633 ,  H01L21/76826 ,  H01L21/76831

摘要： Damaged surfaces of a low k carbon-containing silicon oxide dielectric material are treated with one or more carbon-containing gases, and in the absence of an oxidizing agent, to inhibit subsequent formation of silicon-hydroxyl bonds when the damaged surfaces of the low k dielectric material are thereafter exposed to moisture. The carbon-containing gas treatment of the invention is carried out after the step of oxidizing or “ashing” the resist mask to remove the mask, but prior to exposure of the damaged surfaces of the low k dielectric material to moisture. Optionally, the carbon-containing gas treatment may also be carried out after the initial step of etching the low k carbon-containing silicon oxide dielectric material to form vias or contact openings as well, particularly when exposure of the damaged surfaces of the low k dielectric material to moisture after the via etching step and prior to the resist removing oxidation step is possible. The treatment of the damaged low k carbon-containing silicon oxide dielectric material with a carbon-containing gas may be carried out with or without the assistance of a plasma, but preferably will be carried out in the presence of a plasma. An N2 densification step may also be carried out after the via etch step and optional carbon-containing gas treatment, but prior to the resist removal oxidation step.

摘要翻译： 低k碳氧化硅介电材料的损伤表面用一种或多种含碳气体进行处理，并且在不存在氧化剂的情况下，当低k的损坏表面时，抑制随后的硅 - 羟基键形成 介电材料此后暴露于水分。 本发明的含碳气体处理在氧化或“灰化”抗蚀剂掩模以去除掩模的步骤之后，但是在将低k介电材料的损坏表面暴露于水分之前进行。 任选地，含碳气体处理也可以在蚀刻低k含碳氧化硅电介质材料的初始步骤之后进行，以形成通孔或接触开口，特别是当暴露低k电介质的受损表面时 在通孔蚀刻步骤之后和抗蚀剂去除氧化步骤之前的材料对湿气是可能的。 用含碳气体处理损坏的低k含碳氧化硅电介质材料可以在或不用等离子体的帮助下进行，但优选在等离子体存在下进行。 在通孔蚀刻步骤和任选的含碳气体处理之后，但在抗蚀剂去除氧化步骤之前，也可以进行N2致密化步骤。

公开(公告)号：US06346488B1

公开(公告)日：2002-02-12

申请号：US09605382

申请日：2000-06-27

申请人： Alex Kabansky

发明人： Alex Kabansky

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/314 ,  H01L21/31633 ,  H01L21/76826

摘要： A film of low k dielectric material formed on a semiconductor substrate is treated to inhibit cracking of the film of low k dielectric material during subsequent exposure of the film of low k dielectric material to elevated temperatures by implanting the film of low k dielectric material with hydrogen ions by applying a negative DC bias to the semiconductor substrate in the presence of a plasma of hydrogen ions. The semiconductor substrate is mounted on an electrically conductive substrate support in a reactor and the negative DC bias is applied to the semiconductor substrate by connecting the electrically conductive substrate support to a source of negative DC bias while hydrogen ions are generated by the plasma in the reactor to thereby cause the hydrogen ions to implant into the film of low k dielectric material on the semiconductor substrate.

摘要翻译： 处理形成在半导体衬底上的低k电介质材料的薄膜，以便在随后通过用氢注入低介电常数材料的薄膜将低k电介质材料的膜暴露于升高温度期间，抑制低k电介质材料膜的破裂 在氢离子等离子体的存在下，通过施加负的DC偏压到半导体衬底。 将半导体衬底安装在反应器中的导电衬底支撑件上，并且通过将导电衬底支撑件连接到负DC偏压源而将负DC偏压施加到半导体衬底，同时通过反应器中的等离子体产生氢离子 从而使氢离子注入到半导体衬底上的低k电介质材料的膜中。