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13 条记录 (耗时 0.012 秒)

    Shielding device
    1.
    发明授权
    Shielding device 有权
    屏蔽装置

    公开(公告)号：US07999358B2

    公开(公告)日：2011-08-16

    申请号：US11742198

    申请日：2007-04-30

    申请人： Winfried Bakalski ,  Bernd Eisener ,  Uwe Seidel ,  Markus Zannoth

    发明人： Winfried Bakalski ,  Bernd Eisener ,  Uwe Seidel ,  Markus Zannoth

    IPC分类号： H01L23/552

    CPC分类号： H01L23/552 ,  H01L23/5225 ,  H01L23/60 ,  H01L2924/0002 ,  H01L2924/00

    摘要： One aspect of the invention relates to a shielding device for shielding from electromagnetic radiation, including a shielding base element, a shielding cover element and a shielding lateral element for electrically connecting the base element to the cover element in such that a circuit part to be shielded is arranged within the shielding elements. Since at least one partial section of the shielding elements includes a semiconductor material, a shielding device can be realized completely and cost-effectively in an integrated circuit.

    摘要翻译： 本发明的一个方面涉及一种用于屏蔽电磁辐射的屏蔽装置，包括屏蔽基座元件，屏蔽盖元件和屏蔽横向元件，用于将基座元件电连接到覆盖元件，使屏蔽电路部分 布置在屏蔽元件内。 由于屏蔽元件的至少一部分包括半导体材料，因此可以在集成电路中完全且成本有效地实现屏蔽装置。

    Semiconductor structure for draining an overvoltage pulse, and method for manufacturing same
    3.
    发明申请
    Semiconductor structure for draining an overvoltage pulse, and method for manufacturing same 审中-公开
    用于排出过电压脉冲的半导体结构及其制造方法

    公开(公告)号：US20070085143A1

    公开(公告)日：2007-04-19

    申请号：US11540489

    申请日：2006-09-29

    申请人： Bernd Eisener ,  Hubert Werthmann

    发明人： Bernd Eisener ,  Hubert Werthmann

    IPC分类号： H01L23/62

    CPC分类号： H01L29/861 ,  H01L27/0255 ,  H01L29/0692

    摘要： A semiconductor structure for draining an overvoltage pulse comprises a first semiconductor region having a first doping type and a semiconductor layer arranged adjacent the first semiconductor region. The semiconductor layer includes an isolation structure configured to electrically isolate a second semiconductor region from a surrounding region. The second semiconductor region has a second doping type. A third semiconductor region having the first doping type is arranged adjacent the second semiconductor region and is disposed within an area limited by the isolation structure. A first contacting structure is configured to provide an electrical contact with the first semiconductor region, and a second contacting structure is configured to provide an electrical contact with the third semiconductor region. The first and second semiconductor regions are more highly doped than the second semiconductor region.

    摘要翻译： 用于排出过电压脉冲的半导体结构包括具有第一掺杂类型的第一半导体区域和邻近第一半导体区域布置的半导体层。 半导体层包括被配置为将第二半导体区域与周围区域电隔离的隔离结构。 第二半导体区域具有第二掺杂型。 具有第一掺杂类型的第三半导体区域被布置成与第二半导体区域相邻并且被布置在由隔离结构限制的区域内。 第一接触结构被配置为提供与第一半导体区域的电接触，并且第二接触结构被配置为提供与第三半导体区域的电接触。 第一和第二半导体区域比第二半导体区域更高掺杂。

    Semiconductor structure and method for making same
    4.
    发明授权
    Semiconductor structure and method for making same 有权
    半导体结构及其制造方法

    公开(公告)号：US08592883B2

    公开(公告)日：2013-11-26

    申请号：US13233038

    申请日：2011-09-15

    申请人： Dieter Claeys ,  Bernd Eisener ,  Guenter Pfeifer ,  Detlef Wilhelm

    发明人： Dieter Claeys ,  Bernd Eisener ,  Guenter Pfeifer ,  Detlef Wilhelm

    IPC分类号： H01L27/108

    CPC分类号： H01L28/60 ,  H01L27/016 ,  H01L29/945

    摘要： An embodiment may be a semiconductor structure, comprising; a workpiece having a front side and a back side; and a capacitor disposed in the workpiece, the capacitor including a bottom electrode electrically coupled to a back side of said workpiece. In an embodiment, the bottom electrode may form a conductive pathway to the front side of the workpiece. In an embodiment, the capacitor may be a trench capacitor.

    摘要翻译： 实施例可以是半导体结构，包括： 具有前侧和后侧的工件; 以及设置在所述工件中的电容器，所述电容器包括电耦合到所述工件的背面的底部电极。 在一个实施例中，底部电极可以形成到工件前侧的导电路径。 在一个实施例中，电容器可以是沟槽电容器。

    SHIELDING DEVICE
    6.
    发明申请
    SHIELDING DEVICE 有权
    屏蔽装置

    公开(公告)号：US20110260302A1

    公开(公告)日：2011-10-27

    申请号：US13178107

    申请日：2011-07-07

    申请人： Winfried Bakalski ,  Bernd Eisener ,  Uwe Seidel ,  Markus Zannoth

    发明人： Winfried Bakalski ,  Bernd Eisener ,  Uwe Seidel ,  Markus Zannoth

    IPC分类号： H01L23/552

    CPC分类号： H01L23/552 ,  H01L23/5225 ,  H01L23/60 ,  H01L2924/0002 ,  H01L2924/00

    摘要： One aspect of the invention relates to a shielding device for shielding from electromagnetic radiation, including a shielding base element, a shielding cover element and a shielding lateral element for electrically connecting the base element to the cover element in such that a circuit part to be shielded is arranged within the shielding elements. Since at least one partial section of the shielding elements includes a semiconductor material, a shielding device can be realized completely and cost-effectively in an integrated circuit.

    摘要翻译： 本发明的一个方面涉及一种用于屏蔽电磁辐射的屏蔽装置，包括屏蔽基座元件，屏蔽盖元件和屏蔽横向元件，用于将基座元件电连接到覆盖元件，使屏蔽电路部分 布置在屏蔽元件内。 由于屏蔽元件的至少一部分包括半导体材料，因此可以在集成电路中完全且成本有效地实现屏蔽装置。

    Electronic device with guard ring
    7.
    发明授权
    Electronic device with guard ring 有权
    带防护环的电子设备

    公开(公告)号：US07307329B2

    公开(公告)日：2007-12-11

    申请号：US10887244

    申请日：2004-07-08

    申请人： Cartens Ahrens ,  Ulf Bartl ,  Bernd Eisener ,  Wolfgang Hartung ,  Christian Herzum ,  Raimund Peichl ,  Stefan Pompl ,  Hubert Werthmann

    发明人： Cartens Ahrens ,  Ulf Bartl ,  Bernd Eisener ,  Wolfgang Hartung ,  Christian Herzum ,  Raimund Peichl ,  Stefan Pompl ,  Hubert Werthmann

    IPC分类号： H01L29/47 ,  H01L21/28

    CPC分类号： H01L29/66143 ,  H01L29/417 ,  H01L29/872

    摘要： An electronic device includes a substrate, an insulating layer arranged on the substrate, the insulating layer having an opening in an area of the surface of the substrate, an active layer arranged within the opening on the surface of the substrate, the active layer including a guard ring in those areas of the surface and of the active layer which are adjacent to the insulating layer, and a contacting layer arranged on an area of the active layer, the contact layer being adjacent to an area of the guard ring. The device may be produced by a process of three-fold self-alignment, to be precise utilizing a spacer process by means of which a diffusion source having a lateral extension far below the lithography limit is made possible.

    摘要翻译： 电子器件包括衬底，布置在衬底上的绝缘层，所述绝缘层在衬底的表面的区域中具有开口，布置在衬底的表面的开口内的有源层，所述活性层包括 保护环在与绝缘层相邻的表面和有源层的那些区域中，以及接触层，布置在有源层的区域上，接触层邻近保护环的区域。 该装置可以通过三重自对准的方法制造，以精确地利用间隔物工艺，通过该间隔工艺，具有远低于光刻极限的横向延伸的扩散源成为可能。

    Shielding device
    10.
    发明授权
    Shielding device 有权
    屏蔽装置

    公开(公告)号：US08513782B2

    公开(公告)日：2013-08-20

    申请号：US13178107

    申请日：2011-07-07

    申请人： Winfried Bakalski ,  Bernd Eisener ,  Uwe Seidel ,  Markus Zannoth

    发明人： Winfried Bakalski ,  Bernd Eisener ,  Uwe Seidel ,  Markus Zannoth

    IPC分类号： H01L23/552

    CPC分类号： H01L23/552 ,  H01L23/5225 ,  H01L23/60 ,  H01L2924/0002 ,  H01L2924/00

    摘要： One aspect of the invention relates to a shielding device for shielding from electromagnetic radiation, including a shielding base element, a shielding cover element and a shielding lateral element for electrically connecting the base element to the cover element in such that a circuit part to be shielded is arranged within the shielding elements. Since at least one partial section of the shielding elements includes a semiconductor material, a shielding device can be realized completely and cost-effectively in an integrated circuit.

    摘要翻译： 本发明的一个方面涉及一种用于屏蔽电磁辐射的屏蔽装置，包括屏蔽基座元件，屏蔽盖元件和用于将基座元件电连接到覆盖元件的屏蔽横向元件，使得屏蔽电路部分 布置在屏蔽元件内。 由于屏蔽元件的至少一部分包括半导体材料，因此可以在集成电路中完全且成本有效地实现屏蔽装置。