Power amplifier
    3.
    发明授权
    Power amplifier 有权
    功率放大器

    公开(公告)号:US07486136B2

    公开(公告)日:2009-02-03

    申请号:US11535288

    申请日:2006-09-26

    IPC分类号: H03G3/68

    摘要: A power amplifier has at least a first amplifier circuit with an output port and at least a second amplifier circuit with an output port. The power amplifier further has at least a coupler with a first and a second input port and a first and a second output port. The first input port of the coupler is coupled with the output port of the first amplifier circuit and the second input port of the coupler is coupled with the output port of the second amplifier circuits. The power amplifier further has a switch with at least an input terminal and at least two output terminals. The input terminal of the switch is coupled with the first output port of the coupler, wherein each of the output terminals of the switch is connected with a respective terminal impedance, the terminal impedances having different impedance values.

    摘要翻译: 功率放大器至少具有带输出端口的第一放大器电路和至少具有输出端口的第二放大器电路。 功率放大器还具有至少一个具有第一和第二输入端口以及第一和第二输出端口的耦合器。 耦合器的第一输入端口与第一放大器电路的输出端口耦合,并且耦合器的第二输入端口与第二放大器电路的输出端口耦合。 功率放大器还具有至少具有输入端和至少两个输出端的开关。 开关的输入端与耦合器的第一输出端口耦合,其中开关的每个输出端与相应的端子阻抗相连,端子阻抗具有不同的阻抗值。

    Transmitting output stage with adjustable output power and process for amplifying a signal in a transmitting output stage
    4.
    发明授权
    Transmitting output stage with adjustable output power and process for amplifying a signal in a transmitting output stage 有权
    发射输出级具有可调输出功率和放大发射输出级信号的过程

    公开(公告)号:US07486133B2

    公开(公告)日:2009-02-03

    申请号:US11584319

    申请日:2006-10-20

    申请人: Winfried Bakalski

    发明人: Winfried Bakalski

    IPC分类号: H03F3/191

    CPC分类号: H04B1/0458 H03F1/56 H03F3/245

    摘要: In one embodiment of a transmitting output stage, a first controllable amplification device with a first amplification factor and a second amplification device with a second amplification factor are provided. The two amplification devices are connected on the input side to a signal input. The transmitting output stage comprises a first matching network, which is connected on the input side to an output of first amplification device. A second matching network is also provided, which is installed switchably between an output of the second amplifier stage and the input of the first matching network and which, in one operating mode of the transmitting output stage in which only the second amplifier stage is being used, is connected between the second amplifier stage and the first matching network. Other embodiments are also disclosed.

    摘要翻译: 在发射输出级的一个实施例中,提供具有第一放大因子的第一可控放大器件和具有第二放大因子的第二放大器件。 两个放大装置在输入侧连接到信号输入端。 发射输出级包括第一匹配网络,其在输入侧连接到第一放大装置的输出端。 还提供了第二匹配网络,其可切换地安装在第二放大器级的输出和第一匹配网络的输入之间,并且在仅使用第二放大器级的发送输出级的一个操作模式中 连接在第二放大器级与第一匹配网络之间。 还公开了其他实施例。

    Transmitting output stage with adjustable output power and process for amplifying a signal in a transmitting output stage
    5.
    发明申请
    Transmitting output stage with adjustable output power and process for amplifying a signal in a transmitting output stage 有权
    发射输出级具有可调输出功率和放大发射输出级信号的过程

    公开(公告)号:US20070096804A1

    公开(公告)日:2007-05-03

    申请号:US11584319

    申请日:2006-10-20

    申请人: Winfried Bakalski

    发明人: Winfried Bakalski

    IPC分类号: H03F1/14

    CPC分类号: H04B1/0458 H03F1/56 H03F3/245

    摘要: In one embodiment of a transmitting output stage, a first controllable amplification device with a first amplification factor and a second amplification device with a second amplification factor are provided. The two amplification devices are connected on the input side to a signal input. The transmitting output stage comprises a first matching network, which is connected on the input side to an output of first amplification device. A second matching network is also provided, which is installed switchably between an output of the second amplifier stage and the input of the first matching network and which, in one operating mode of the transmitting output stage in which only the second amplifier stage is being used, is connected between the second amplifier stage and the first matching network. Other embodiments are also disclosed.

    摘要翻译: 在发射输出级的一个实施例中,提供具有第一放大因子的第一可控放大器件和具有第二放大因子的第二放大器件。 两个放大装置在输入侧连接到信号输入端。 发射输出级包括第一匹配网络,其在输入侧连接到第一放大装置的输出端。 还提供了第二匹配网络,其可切换地安装在第二放大器级的输出和第一匹配网络的输入之间,并且在仅使用第二放大器级的发送输出级的一个操作模式中 连接在第二放大器级与第一匹配网络之间。 还公开了其他实施例。

    DC Power Supply Circuit, Oscillator Circuit and Method for Generating a DC Power Supply Signal
    6.
    发明申请
    DC Power Supply Circuit, Oscillator Circuit and Method for Generating a DC Power Supply Signal 有权
    直流电源电路,振荡器电路和直流电源信号的产生方法

    公开(公告)号:US20140077892A1

    公开(公告)日:2014-03-20

    申请号:US13619963

    申请日:2012-09-14

    IPC分类号: G05F1/46

    CPC分类号: G05F1/46 H03L7/099 H03L7/18

    摘要: A DC power supply circuit comprises an output configured to provide a power supply signal to an RF element for generating an RF output signal. Furthermore, the DC power supply circuit comprises an input configured to receive the RF output signal. The DC power supply circuit is configured to generate the DC power supply signal based on the received RF output signal.

    摘要翻译: 直流电源电路包括被配置为向RF元件提供电源信号以产生RF输出信号的输出。 此外,直流电源电路包括被配置为接收RF输出信号的输入。 直流电源电路被配置为基于接收到的RF输出信号生成直流电源信号。

    System and Method for Attenuating a Signal in a Radio Frequency System
    7.
    发明申请
    System and Method for Attenuating a Signal in a Radio Frequency System 审中-公开
    用于衰减射频系统信号的系统和方法

    公开(公告)号:US20140011461A1

    公开(公告)日:2014-01-09

    申请号:US13541551

    申请日:2012-07-03

    IPC分类号: H04B1/44

    摘要: In accordance with an embodiment, a method includes coupling power from a transmitter to form a first signal, conditioning the first signal to form a second signal, and coupling the second signal to an input of a receiver. Conditioning includes adjusting the second signal to combine in anti-phase with a leakage signal coupled from the transmitter to the input of the receiver such that the leakage signal is attenuated.

    摘要翻译: 根据实施例,一种方法包括:耦合来自发射器的功率以形成第一信号,调节第一信号以形成第二信号,以及将第二信号耦合到接收机的输入端。 调节包括调整第二信号以与从发射机耦合到接收机输入端的泄漏信号反相组合,使得泄漏信号被衰减。

    Electrostatic Discharge Protection Element and Electrostatic Discharge Protection Chip and Method of Producing the Same
    9.
    发明申请
    Electrostatic Discharge Protection Element and Electrostatic Discharge Protection Chip and Method of Producing the Same 有权
    静电放电保护元件和静电放电保护芯片及其制造方法

    公开(公告)号:US20120319137A1

    公开(公告)日:2012-12-20

    申请号:US13599636

    申请日:2012-08-30

    摘要: An electrostatic discharge (ESD) protection element includes a collector area, a first barrier area, a semiconductor area, a second barrier area and an emitter area. The collector area has a first conductivity type. The first barrier area borders on the collector area and has a second conductivity type. The semiconductor area borders on the first barrier area and is an intrinsic semiconductor area, or has the first or second conductivity type and a dopant concentration which is lower than a dopant concentration of the first barrier area. The second barrier area borders on the semiconductor area and has the second conductivity type and a higher dopant concentration than the semiconductor area. The emitter area borders on the second barrier area and has the first conductivity type.

    摘要翻译: 静电放电(ESD)保护元件包括集电区域,第一阻挡区域,半导体区域,第二阻挡区域和发射极区域。 集电区具有第一导电类型。 第一屏障区域与集电区域相邻,具有第二导电类型。 半导体区域与第一屏障区域相邻并且是本征半导体区域,或者具有低于第一阻挡区域的掺杂剂浓度的第一或第二导电类型和掺杂剂浓度。 第二阻挡区域与半导体区域相邻并且具有比半导体区域更高的第二导电类型和更高的掺杂剂浓度。 发射极区域与第二阻挡区域相邻并且具有第一导电类型。

    Electrostatic Discharge Protection Element and Electrostatic Discharge Protection Chip and Method of Producing the Same
    10.
    发明申请
    Electrostatic Discharge Protection Element and Electrostatic Discharge Protection Chip and Method of Producing the Same 有权
    静电放电保护元件和静电放电保护芯片及其制造方法

    公开(公告)号:US20110026174A1

    公开(公告)日:2011-02-03

    申请号:US12533919

    申请日:2009-07-31

    摘要: An electrostatic discharge (ESD) protection element is described, the ESD protection element including a collector area, a first barrier area, a semiconductor area, a second barrier area and an emitter area. The collector area has a first conductivity type. The first barrier area borders on the collector area and has a second conductivity type. The semiconductor area borders on the first barrier area and is an intrinsic semiconductor area, or has the first or second conductivity type and a dopant concentration which is lower than a dopant concentration of the first barrier area. The second barrier area borders on the semiconductor area and has the second conductivity type and a higher dopant concentration than the semiconductor area. The emitter area borders on the second barrier area and has the first conductivity type.

    摘要翻译: 描述了静电放电(ESD)保护元件,ESD保护元件包括集电极区域,第一阻挡区域,半导体区域,第二阻挡区域和发射极区域。 集电区具有第一导电类型。 第一屏障区域与集电区域相邻,具有第二导电类型。 半导体区域与第一屏障区域相邻并且是本征半导体区域,或者具有低于第一阻挡区域的掺杂剂浓度的第一或第二导电类型和掺杂剂浓度。 第二阻挡区域与半导体区域相邻并且具有比半导体区域更高的第二导电类型和更高的掺杂剂浓度。 发射极区域与第二阻挡区域相邻并且具有第一导电类型。