摘要:
An RF switch includes a switchable RF transistor. The switchable RF transistor includes a stripe of a plurality of adjacent RF transistor fingers and at least one non-switchable dummy transistor that is arranged at an end of the stripe of the switchable RF transistor.
摘要:
A circuit arrangement includes a plurality of type-identical and identically operated active components, or separate sections of an active component, and includes a branched wiring structure for the interconnection of component connections. In each case the wiring end portions lie between a branching point and an input of different components or sections, wherein the wiring end portions are formed with predetermined geometrical asymmetry with respect to one another in such a way that there is an electrical symmetry of the interconnection configuration between all the connected type-identical components or sections. More particularly, the impedance values between the branching point and the different inputs and outputs are substantially identical.
摘要:
A power amplifier has at least a first amplifier circuit with an output port and at least a second amplifier circuit with an output port. The power amplifier further has at least a coupler with a first and a second input port and a first and a second output port. The first input port of the coupler is coupled with the output port of the first amplifier circuit and the second input port of the coupler is coupled with the output port of the second amplifier circuits. The power amplifier further has a switch with at least an input terminal and at least two output terminals. The input terminal of the switch is coupled with the first output port of the coupler, wherein each of the output terminals of the switch is connected with a respective terminal impedance, the terminal impedances having different impedance values.
摘要:
In one embodiment of a transmitting output stage, a first controllable amplification device with a first amplification factor and a second amplification device with a second amplification factor are provided. The two amplification devices are connected on the input side to a signal input. The transmitting output stage comprises a first matching network, which is connected on the input side to an output of first amplification device. A second matching network is also provided, which is installed switchably between an output of the second amplifier stage and the input of the first matching network and which, in one operating mode of the transmitting output stage in which only the second amplifier stage is being used, is connected between the second amplifier stage and the first matching network. Other embodiments are also disclosed.
摘要:
In one embodiment of a transmitting output stage, a first controllable amplification device with a first amplification factor and a second amplification device with a second amplification factor are provided. The two amplification devices are connected on the input side to a signal input. The transmitting output stage comprises a first matching network, which is connected on the input side to an output of first amplification device. A second matching network is also provided, which is installed switchably between an output of the second amplifier stage and the input of the first matching network and which, in one operating mode of the transmitting output stage in which only the second amplifier stage is being used, is connected between the second amplifier stage and the first matching network. Other embodiments are also disclosed.
摘要:
A DC power supply circuit comprises an output configured to provide a power supply signal to an RF element for generating an RF output signal. Furthermore, the DC power supply circuit comprises an input configured to receive the RF output signal. The DC power supply circuit is configured to generate the DC power supply signal based on the received RF output signal.
摘要:
In accordance with an embodiment, a method includes coupling power from a transmitter to form a first signal, conditioning the first signal to form a second signal, and coupling the second signal to an input of a receiver. Conditioning includes adjusting the second signal to combine in anti-phase with a leakage signal coupled from the transmitter to the input of the receiver such that the leakage signal is attenuated.
摘要:
Implementations are presented herein that include an antenna switch that includes a plurality of ports. A bandstop filter is coupled to at least one of the plurality of ports of the antenna switch and the bandstop filter is configured to attenuate a disturbing frequency. A transistor is configured to receive a control signal and to switch on the bandstop filter responsive to the control signal.
摘要:
An electrostatic discharge (ESD) protection element includes a collector area, a first barrier area, a semiconductor area, a second barrier area and an emitter area. The collector area has a first conductivity type. The first barrier area borders on the collector area and has a second conductivity type. The semiconductor area borders on the first barrier area and is an intrinsic semiconductor area, or has the first or second conductivity type and a dopant concentration which is lower than a dopant concentration of the first barrier area. The second barrier area borders on the semiconductor area and has the second conductivity type and a higher dopant concentration than the semiconductor area. The emitter area borders on the second barrier area and has the first conductivity type.
摘要:
An electrostatic discharge (ESD) protection element is described, the ESD protection element including a collector area, a first barrier area, a semiconductor area, a second barrier area and an emitter area. The collector area has a first conductivity type. The first barrier area borders on the collector area and has a second conductivity type. The semiconductor area borders on the first barrier area and is an intrinsic semiconductor area, or has the first or second conductivity type and a dopant concentration which is lower than a dopant concentration of the first barrier area. The second barrier area borders on the semiconductor area and has the second conductivity type and a higher dopant concentration than the semiconductor area. The emitter area borders on the second barrier area and has the first conductivity type.