公开(公告)号：US08617649B2

公开(公告)日：2013-12-31

申请号：US13618949

申请日：2012-09-14

Applicant: Christian Dussarrat ,  Clement Lansalot-Matras

Inventor： Christian Dussarrat ,  Clement Lansalot-Matras

IPC: B05D3/02

CPC classification number: C23C16/18 ,  C23C16/45553

Abstract: Methods and compositions for depositing a film on one or more substrates include providing a reactor with at least one substrate disposed in the reactor. At least one metal precursor are provided and at least partially deposited onto the substrate to form a metal-containing film.

Abstract translation: 在一个或多个基底上沉积膜的方法和组合物包括提供反应器中设置有至少一个底物的反应器。 提供至少一种金属前体并且至少部分地沉积到基底上以形成含金属的膜。

公开(公告)号：US08076243B2

公开(公告)日：2011-12-13

申请号：US12693930

申请日：2010-01-26

Applicant: Christian Dussarrat ,  Clement Lansalot-Matras ,  Vincent M. Omarjee ,  Cheng-Fang Hsiao

Inventor： Christian Dussarrat ,  Clement Lansalot-Matras ,  Vincent M. Omarjee ,  Cheng-Fang Hsiao

IPC: H01L23/48

CPC classification number: H01L21/28562 ,  C23C16/18 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/76871

Abstract: Compositions and methods for forming a metal-containing thin film on a substrate. A reactor and at least one substrate in the reactor are provided. A metal-containing bis-β-diketiminate precursor is introduced into the reactor. The reactor is maintained at a set temperature and pressure, and the precursor is contacted with the substrate to form a metal-containing film on the substrate.

Abstract translation: 在基材上形成含金属薄膜的组合物和方法。 提供反应器和反应器中的至少一个基板。 将含金属的双 - 二氮嗪酮前体引入反应器。 将反应器保持在设定的温度和压力下，并将前体与基底接触以在基底上形成含金属的膜。

公开(公告)号：US20110034653A1

公开(公告)日：2011-02-10

申请号：US12670185

申请日：2008-07-16

Applicant: Clement Lansalot-MaTras ,  Olivier Lavastre ,  Sabine Sirol

Inventor： Clement Lansalot-MaTras ,  Olivier Lavastre ,  Sabine Sirol

IPC: C08F4/12 ,  C07F11/00 ,  C07F15/04 ,  B01J31/22 ,  C08F4/06

CPC classification number: C07F13/005 ,  C07F15/045

Abstract: The present invention discloses metallic complexes based on hydroxyl-carbonyl fulvene ligands, their method of preparation and their use in the oligomerisation or polymerisation of ethylene and alpha-olefins.

Abstract translation: 本发明公开了基于羟基 - 羰基富烯配体的金属络合物，其制备方法及其在乙烯和α-烯烃的低聚或聚合中的应用。

公开(公告)号：US20100119406A1

公开(公告)日：2010-05-13

申请号：US12613732

申请日：2009-11-06

Applicant: Christian DUSSARRAT ,  Clement LANSALOT-MATRAS

Inventor： Christian DUSSARRAT ,  Clement LANSALOT-MATRAS

IPC: B05D5/12 ,  C22C5/04

CPC classification number: C07F15/0046 ,  C07F15/006 ,  C07F15/0086 ,  C07F15/04 ,  C23C16/18 ,  C23C16/45553

Abstract: Methods and compositions for depositing a film on one or more substrates include providing a reactor with at least one substrate disposed in the reactor. At least one metal precursor is provided and at least partially deposited on the substrate to form a metal containing film.

Abstract translation: 在一个或多个基底上沉积膜的方法和组合物包括提供反应器中设置有至少一个底物的反应器。 提供至少一种金属前体并且至少部分地沉积在基底上以形成含金属膜。

公开(公告)号：US20160251756A1

公开(公告)日：2016-09-01

申请号：US15035592

申请日：2013-11-13

Applicant: Clement Lansalot-Matras ,  Wontae Noh ,  Jooho Lee ,  L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude

Inventor： Clement Lansalot-Matras ,  Wontae Noh ,  Jooho Lee

IPC: C23C16/18 ,  H01L21/285 ,  C07F9/00 ,  C01G33/00 ,  C09D5/24 ,  C23C16/455 ,  H01L21/02

CPC classification number: C23C16/18 ,  C01G33/00 ,  C01P2006/40 ,  C07F9/005 ,  C09D5/24 ,  C23C16/452 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/02175 ,  H01L21/02208 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/28556 ,  H01L21/28568

Abstract: Disclosed are Group 5 transition metal-containing thin film forming precursors. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 5 transition metal-containing thin films on one or more substrates via vapor deposition processes.

Abstract translation: 公开了第5族含过渡金属的薄膜形成前体。 还公开了合成和使用所公开的前体以通过气相沉积工艺在一个或多个衬底上沉积含有5族过渡金属的薄膜的方法。

公开(公告)号：US20130089681A1

公开(公告)日：2013-04-11

申请号：US13269163

申请日：2011-10-07

Applicant: Christian Dussarrat ,  Vincent M. Omarjee ,  Clement Lansalot-Matras

Inventor： Christian Dussarrat ,  Vincent M. Omarjee ,  Clement Lansalot-Matras

IPC: C23C16/18

CPC classification number: C23C16/18 ,  C23C16/45536 ,  C23C16/45553

Abstract: The present invention relates to a process for the use of Titanium amidinate metal precursors for the deposition of Titanium-containing films via Plasma Enhanced Atomic Layer Deposition (PEALD) or Plasma Enhanced Chemical Vapor Deposition (PECVD).

Abstract translation: 本发明涉及用于通过等离子体增强原子层沉积（PEALD）或等离子体增强化学气相沉积（PECVD）沉积含钛膜的钛脒金属前体的方法。

公开(公告)号：US08349738B2

公开(公告)日：2013-01-08

申请号：US13293878

申请日：2011-11-10

Applicant: Clement Lansalot-Matras ,  Christian Dussarrat ,  Vincent M. Omarjee ,  Cheng-Fang Hsiao

Inventor： Clement Lansalot-Matras ,  Christian Dussarrat ,  Vincent M. Omarjee ,  Cheng-Fang Hsiao

IPC: H01L21/44

CPC classification number: H01L21/28562 ,  C23C16/18 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/76871

Abstract: Compositions and methods for forming a metal-containing thin film on a substrate. A reactor and at least one substrate in the reactor are provided. A metal-containing bis-β-diketiminate precursor is introduced into the reactor. The reactor is maintained at a set temperature and pressure, and the precursor is contacted with the substrate to form a metal-containing film on the substrate.

Abstract translation: 在基材上形成含金属薄膜的组合物和方法。 提供反应器和反应器中的至少一个基板。 将含金属的双 - 二氮嗪酮前体引入反应器。 将反应器保持在设定的温度和压力下，并将前体与基底接触以在基底上形成含金属的膜。

公开(公告)号：US20120122313A1

公开(公告)日：2012-05-17

申请号：US13293878

申请日：2011-11-10

Applicant: Christian Dussarrat ,  Clement Lansalot-Matras ,  Vincent M. Omarjee ,  Cheng-Fang Hsiao

Inventor： Christian Dussarrat ,  Clement Lansalot-Matras ,  Vincent M. Omarjee ,  Cheng-Fang Hsiao

IPC: H01L21/3205

CPC classification number: H01L21/28562 ,  C23C16/18 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/76871

Abstract: Compositions and methods for forming a metal-containing thin film on a substrate. A reactor and at least one substrate in the reactor are provided. A metal-containing bis-β-diketiminate precursor is introduced into the reactor. The reactor is maintained at a set temperature and pressure, and the precursor is contacted with the substrate to form a metal-containing film on the substrate.

Abstract translation: 在基材上形成含金属薄膜的组合物和方法。 提供反应器和反应器中的至少一个基板。 将含金属的双 - 二氮嗪酮前体引入反应器。 将反应器保持在设定的温度和压力下，并将前体与基底接触以在基底上形成含金属的膜。

公开(公告)号：US20130084407A1

公开(公告)日：2013-04-04

申请号：US13248092

申请日：2011-09-29

Applicant: Christian DUSSARRAT ,  Clement LANSALOT-MATRAS ,  Vincent M. OMARJEE

Inventor： Christian DUSSARRAT ,  Clement LANSALOT-MATRAS ,  Vincent M. OMARJEE

IPC: C23C16/18 ,  C23C16/50

CPC classification number: C23C16/18 ,  C23C16/45525 ,  C23C16/50

Abstract: The disclosure relates to a process for depositing a Copper, Gold or Silver containing film using a Copper, Gold or Silver guanidinate and/or Copper, Gold or Silver amidinate precursor, suitable for plasma deposition at temperature equal or lower than 120 degrees C., to a plasma deposition process carried out at a temperature equal or lower than 120 degrees C.

Abstract translation: 本公开涉及一种使用铜，金或银胍和/或铜，金或银脒前体沉积含铜，金或银的膜的方法，其适于在等于或低于120℃的温度下进行等离子体沉积， 涉及在等于或低于120℃的温度下进行的等离子体沉积工艺。

公开(公告)号：US20130059077A1

公开(公告)日：2013-03-07

申请号：US13549910

申请日：2012-07-16

Applicant: David Thompson ,  Jeffrey W. Anthis ,  Christian Dussarrat ,  Clement Lansalot-Matras

Inventor： David Thompson ,  Jeffrey W. Anthis ,  Christian Dussarrat ,  Clement Lansalot-Matras

IPC: C23C16/06

CPC classification number: C23C16/18 ,  C23C16/45553

Abstract: Methods for deposition of metal films consisting essentially of Co, Mn, Ru or a lanthanide on surfaces using metal coordination complexes are provided. The precursors used in the process include a 2-methylimine pyrrolyl ligand and/or N,N′-diisopropylformamidinato ligand. The precursors may also contain cyclopentadienyl, pentamethylcyclopentadienyl or pyrrolyl groups.

Abstract translation: 提供了使用金属配位络合物在表面上沉积基本由Co，Mn，Ru或镧系金属构成的金属膜的方法。 在该方法中使用的前体包括2-甲基亚胺吡咯基配体和/或N，N'-二异丙基甲酰胺配体。 前体还可以含有环戊二烯基，五甲基环戊二烯基或吡咯基。