公开(公告)号：US07294576B1

公开(公告)日：2007-11-13

申请号：US11478023

申请日：2006-06-29

申请人： Zhan Chen ,  Robert Vacassy ,  Benjamin Bayer ,  Dinesh Khanna

发明人： Zhan Chen ,  Robert Vacassy ,  Benjamin Bayer ,  Dinesh Khanna

IPC分类号： H01L21/302

CPC分类号： H01L21/3212 ,  C09G1/02 ,  H01L21/31053

摘要： The invention provides a method of preparing a chemical-mechanical polishing composition for polishing a substrate with at least a first layer and a second layer. The method comprises providing both a first chemical-mechanical polishing composition comprising an abrasive with a selectivity for a first layer as compared to a second layer and a second chemical-mechanical polishing composition comprising an abrasive with different selectivity for the first layer as compared to the second layer, wherein the second chemical-mechanical polishing composition is stable in the presence of the first chemical-mechanical polishing composition, and mixing the first and second chemical-mechanical polishing compositions in a ratio to achieve a final selectivity for the first layer as compared to the second layer. The invention further provides a method of chemically-mechanically polishing a substrate.

摘要翻译： 本发明提供一种制备用至少第一层和第二层来抛光衬底的化学机械抛光组合物的方法。 该方法包括提供包含磨料的第一化学机械抛光组合物，其与第二层相比具有对第一层的选择性;以及第二化学机械抛光组合物，其包含与第一层相比具有不同选择性的研磨剂 第二层，其中所述第二化学机械抛光组合物在所述第一化学机械抛光组合物的存在下是稳定的，并且以比例混合所述第一和第二化学机械抛光组合物以获得比较所述第一层的最终选择性 到第二层。 本发明还提供了一种化学机械抛光衬底的方法。

公开(公告)号：US20070214728A1

公开(公告)日：2007-09-20

申请号：US11670137

申请日：2007-02-01

申请人： Robert Vacassy ,  Dinesh Khanna ,  Alexander Simpson

发明人： Robert Vacassy ,  Dinesh Khanna ,  Alexander Simpson

IPC分类号： C09G1/00

CPC分类号： C09G1/02 ,  C09K3/1463 ,  C23F3/06 ,  H01L21/3212

摘要： The invention provides a method of chemically-mechanically polishing a substrate comprising tungsten through use of a composition comprising a tungsten etchant, an inhibitor of tungsten etching, and water, wherein the inhibitor of tungsten polishing is a polymer, copolymer, or polymer blend comprising at least one repeating group comprising at least one nitrogen-containing heterocyclic ring or a tertiary or quaternary nitrogen atom. The invention further provides a chemical-mechanical polishing composition particularly useful in polishing tungsten-containing substrates.

摘要翻译： 本发明提供了通过使用包含钨蚀刻剂，钨蚀刻抑制剂和水的组合物对包含钨的基材进行化学机械抛光的方法，其中所述钨抛光抑制剂是聚合物，共聚物或聚合物共混物，其包含在 至少一个包含至少一个含氮杂环或叔或季氮原子的重复基团。 本发明还提供了一种特别适用于抛光含钨衬底的化学机械抛光组合物。

公开(公告)号：US20110014858A1

公开(公告)日：2011-01-20

申请号：US12837705

申请日：2010-07-16

申请人： Ching-Ming TSAI ,  Fred Sun ,  Sheng-Huan Liu ,  Jia-Cheng Hsu ,  Ananth Naman ,  Hao-Kuang Chiu ,  Dinesh Khanna

发明人： Ching-Ming TSAI ,  Fred Sun ,  Sheng-Huan Liu ,  Jia-Cheng Hsu ,  Ananth Naman ,  Hao-Kuang Chiu ,  Dinesh Khanna

IPC分类号： B24D11/00

CPC分类号： B24B37/26

摘要： The present invention provides polishing pads for use in CMP processes. In one embodiment, a pad comprises a surface defining a plurality of grooves with landing surfaces separating the grooves, the landing surfaces together defining a substantially coplanar polishing surface, each groove having a depth of at least about 10 mil and a width, WG, with any two adjacent grooves being separated from each other a landing surface having a width, WL, wherein the quotient WL/WG is less than or equal to 3. In a preferred embodiment, the surface of the pad defines a series of concentric substantially circular grooves. In an alternative embodiment, the surface of the pad defines a spiral groove having a depth of at least about 10 mil and a width WG, and a spiral landing surface outlining spiral groove the having a width, WL, wherein the spiral landing surface defines a substantially coplanar polishing surface and the quotient WL/WG is less than or equal to 3.

摘要翻译： 本发明提供了用于CMP工艺的抛光垫。 在一个实施例中，垫包括限定具有分离凹槽的着陆表面的多个凹槽的表面，所述着陆表面一起限定基本上共面的抛光表面，每个凹槽具有至少约10密耳的深度和宽度WG， 任何两个相邻的凹槽彼此分开具有宽度WL的着陆表面，其中商WL / WG小于或等于3.在优选实施例中，垫的表面限定了一系列同心的大致圆形的凹槽 。 在替代实施例中，垫的表面限定具有至少约10密耳深度和宽度WG的螺旋槽，以及螺旋着陆表面，其具有宽度为WL的螺旋槽，其中螺旋着陆表面限定了 基本上共面的抛光表面和商WL / WG小于或等于3。

公开(公告)号：US20070266641A1

公开(公告)日：2007-11-22

申请号：US11881338

申请日：2007-07-26

申请人： Robert Vacassy ,  Dinesh Khanna ,  Alexander Simpson

发明人： Robert Vacassy ,  Dinesh Khanna ,  Alexander Simpson

IPC分类号： C09C1/68

CPC分类号： C09G1/02 ,  C09K3/1463 ,  C23F3/06 ,  H01L21/3212

摘要： The invention provides a chemical-mechanical polishing composition particularly useful in polishing tungsten-containing substrates. The composition comprises a tungsten etchant, an inhibitor of tungsten etching, and water, wherein the inhibitor of tungsten polishing is a polymer, copolymer, or polymer blend comprising at least one repeating group comprising at least one nitrogen-containing heterocyclic ring or a tertiary or quaternary nitrogen atom.

摘要翻译： 本发明提供了特别可用于抛光含钨基材的化学机械抛光组合物。 所述组合物包含钨蚀刻剂，钨蚀刻抑制剂和水，其中所述钨抛光抑制剂是包含至少一个包含至少一个含氮杂环或叔或三元杂环的重复基团的聚合物，共聚物或聚合物共混物， 季氮原子。

公开(公告)号：US20050282391A1

公开(公告)日：2005-12-22

申请号：US10869397

申请日：2004-06-16

申请人： Robert Vacassy ,  Dinesh Khanna ,  Alexander Simpson

发明人： Robert Vacassy ,  Dinesh Khanna ,  Alexander Simpson

IPC分类号： C09G1/02 ,  C09K3/14 ,  C23F3/06 ,  H01L21/321 ,  H01L21/302 ,  B44C1/22

CPC分类号： C09G1/02 ,  C09K3/1463 ,  C23F3/06 ,  H01L21/3212

摘要： The invention provides a method of chemically-mechanically polishing a substrate comprising tungsten through use of a composition comprising a tungsten etchant, an inhibitor of tungsten etching, and water, wherein the inhibitor of tungsten polishing is a polymer, copolymer, or polymer blend comprising at least one repeating group comprising at least one nitrogen-containing heterocyclic ring or a tertiary or quaternary nitrogen atom. The invention further provides a chemical-mechanical polishing composition particularly useful in polishing tungsten-containing substrates.

摘要翻译： 本发明提供了通过使用包含钨蚀刻剂，钨蚀刻抑制剂和水的组合物对包含钨的基材进行化学机械抛光的方法，其中所述钨抛光抑制剂是聚合物，共聚物或聚合物共混物，其包含在 至少一个包含至少一个含氮杂环或叔或季氮原子的重复基团。 本发明还提供了一种特别适用于抛光含钨衬底的化学机械抛光组合物。

公开(公告)号：US4822868A

公开(公告)日：1989-04-18

申请号：US124744

申请日：1987-11-24

申请人： Werner H. Mueller ,  Dinesh Khanna

发明人： Werner H. Mueller ,  Dinesh Khanna

IPC分类号： C08G69/32 ,  C08G69/26 ,  C08G69/34 ,  C08G65/00

CPC分类号： C08G69/34

摘要： This invention is directed to novel, linear polycarbonamides derived from the condensation of 4,4'-bis[2-(4-carboxyphenyl)hexafluoroisopropyl]diphenyl ether or a derivative thereof with a primary diamine; preferably an aromatic diamine. The novel, linear polycarbonamides of the invention are useful in preparing molded and extruded articles, films and fibers having high thermal stability, resistance to soiling, excellent mechanical properties, good transparency and radiation stability. In addition, they may be processed into useful articles at lower processing temperatures than the comparable polycarbonamides of the prior art.