公开(公告)号：US20090272407A1

公开(公告)日：2009-11-05

申请号：US12503412

申请日：2009-07-15

申请人： Junji NAKAMURA ,  Kousuke Yoshihara ,  Kentaro Yamamura ,  Fumiko Iwao ,  Hirofumi Takeguchi

发明人： Junji NAKAMURA ,  Kousuke Yoshihara ,  Kentaro Yamamura ,  Fumiko Iwao ,  Hirofumi Takeguchi

IPC分类号： B08B3/04 ,  B08B1/00

CPC分类号： H01L21/67051 ,  B08B3/02 ,  B08B3/10 ,  G03F7/3021 ,  Y10S134/902

摘要： A cleaning method of cleaning a surface of a substrate that is processed by a developing process. The method includes pouring a cleaning liquid onto a central part of the substrate. A dry area that is not wetted with the cleaning liquid is created in a central part of the substrate by stopping pouring the cleaning liquid or by shifting a cleaning liquid pouring position to which the cleaning liquid is poured from the central part while the substrate holding device is rotating. The dry area is expanded outward from the central part of the substrate by rotating the substrate holding device at a rotating speed not lower than 1500 rpm without pouring the cleaning liquid onto the dry area. The cleaning liquid is poured onto an outer area contiguously surrounding the dry area on the surface of the substrate.

摘要翻译： 清洗通过显影处理处理的基材表面的清洁方法。 该方法包括将清洗液倒入基材的中心部分。 在基板保持装置的中心部分，通过停止注入清洗液体，或者从中央部移动清洗液注入清洗液的位置，形成未被清洗液润湿的干燥区域 正在旋转。 通过以不低于1500rpm的旋转速度旋转基板保持装置，将干燥区域从基板的中心部分向外扩展，而不将清洗液体倾倒到干燥区域上。 将清洗液倒入围绕基材表面的干燥区域的外部区域上。

公开(公告)号：US08842257B2

公开(公告)日：2014-09-23

申请号：US13401953

申请日：2012-02-22

申请人： Shinji Kobayashi ,  Fumiko Iwao

发明人： Shinji Kobayashi ,  Fumiko Iwao

IPC分类号： G03B27/14 ,  H01L21/677 ,  H01L21/67

CPC分类号： H01L21/67103 ,  H01L21/67748

摘要： A substrate treatment method of performing treatment on a substrate on which a pattern mask has been formed by exposure and developing treatment to improve roughness of the pattern mask includes the processes of: mounting the substrate on a stage in a treatment container; and repeating a plurality of times steps of supplying a solvent gas to a center portion of the substrate while exhausting the solvent gas from a periphery of the substrate to swell the pattern mask, and then supplying a drying gas for drying the solvent supplied to the substrate to the center portion of the substrate while exhausting the drying gas from the periphery of the substrate.

摘要翻译： 通过曝光和显影处理对已经形成图案掩模的基板进行处理以提高图案掩模的粗糙度的基板处理方法包括以下处理：将基板安装在处理容器中的台上; 并重复多次，将溶剂气体供给到基板的中心部分，同时从基板周围排出溶剂气体，使图案掩模溶胀，然后供给用于干燥供给基板的溶剂的干燥气体 到基板的中心部分，同时从基板的周边排出干燥气体。

公开(公告)号：US20090220892A1

公开(公告)日：2009-09-03

申请号：US12395937

申请日：2009-03-02

申请人： Fumiko IWAO ,  Satoru SHIMURA ,  Tetsu KAWASAKI

发明人： Fumiko IWAO ,  Satoru SHIMURA ,  Tetsu KAWASAKI

IPC分类号： G03F7/20 ,  G03B27/52

CPC分类号： G03B27/52 ,  G03F7/30 ,  G03F7/40

摘要： A method of manufacturing a semiconductor device includes: forming a resist layer on an underlayer, forming an exposed pattern in the resist layer, wherein the exposed pattern comprises a soluble layer and an insoluble layer, forming a resist pattern by removing the soluble layer from the resist layer in which the exposed pattern is formed, removing an intermediate exposed area from the resist pattern, forming a new soluble layer in a surface of the resist pattern from which the intermediate exposed area is removed by applying a reaction material to the resist pattern from which the intermediate exposed area is removed, wherein the reaction material generates a solubilization material that solubilizes the resist pattern, and removing the new soluble layer from the resist pattern.

摘要翻译： 一种制造半导体器件的方法包括：在底层上形成抗蚀剂层，在抗蚀剂层中形成曝光图案，其中暴露图案包括可溶层和不溶层，通过从可溶层除去可溶层形成抗蚀剂图案 形成曝光图案的抗蚀剂层，从抗蚀剂图案去除中间曝光区域，在抗蚀剂图案的表面形成新的可溶层，通过将抗反射材料从抗蚀剂图案施加到抗蚀剂图案上从中除去中间暴露区域 去除中间暴露区域，其中反应材料产生溶解抗蚀剂图案的增溶材料，以及从抗蚀剂图案中除去新的可溶层。

公开(公告)号：US20120302066A1

公开(公告)日：2012-11-29

申请号：US13521391

申请日：2011-05-06

申请人： Fumiko Iwao

发明人： Fumiko Iwao

IPC分类号： H01L21/311 ,  B05C9/14

CPC分类号： G03F7/40 ,  G03F7/0035 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/32139

摘要： A method of manufacturing a semiconductor device, which includes forming a resist layer on a substrate, performing an exposure and development process on the resist layer to form a resist pattern, performing a slimming process to slim the resist pattern, forming a mask material layer on side walls of the slimmed resist pattern, and removing the slimmed resist pattern. The slimming process further includes coating an extensive agent on the substrate, expanding the expansive agent, and removing the expanded expansive agent.

摘要翻译： 一种制造半导体器件的方法，包括在衬底上形成抗蚀剂层，在抗蚀剂层上进行曝光和显影处理以形成抗蚀剂图案，进行纤薄化处理以使抗蚀剂图案变薄，形成掩模材料层 薄的抗蚀剂图案的侧壁，并且移除纤细的抗蚀剂图案。 减肥方法还包括在基材上涂覆广泛的试剂，膨胀膨胀剂，以及除去膨胀膨胀剂。

公开(公告)号：US20120225390A1

公开(公告)日：2012-09-06

申请号：US13401953

申请日：2012-02-22

申请人： Shinji KOBAYASHI ,  Fumiko IWAO

发明人： Shinji KOBAYASHI ,  Fumiko IWAO

IPC分类号： B05D5/00 ,  C23C16/52 ,  C23C16/455

CPC分类号： H01L21/67103 ,  H01L21/67748

摘要： A substrate treatment method of performing treatment on a substrate on which a pattern mask has been formed by exposure and developing treatment to improve roughness of the pattern mask includes the processes of: mounting the substrate on a stage in a treatment container; and repeating a plurality of times steps of supplying a solvent gas to a center portion of the substrate while exhausting the solvent gas from a periphery of the substrate to swell the pattern mask, and then supplying a drying gas for drying the solvent supplied to the substrate to the center portion of the substrate while exhausting the drying gas from the periphery of the substrate.

摘要翻译： 通过曝光和显影处理对已经形成图案掩模的基板进行处理以提高图案掩模的粗糙度的基板处理方法包括以下处理：将基板安装在处理容器中的台上; 并重复多次，将溶剂气体供给到基板的中心部分，同时从基板周围排出溶剂气体，使图案掩模溶胀，然后供给用于干燥供给基板的溶剂的干燥气体 到基板的中心部分，同时从基板的周边排出干燥气体。

公开(公告)号：US07901514B2

公开(公告)日：2011-03-08

申请号：US12503412

申请日：2009-07-15

申请人： Junji Nakamura ,  Kousuke Yoshihara ,  Kentaro Yamamura ,  Fumiko Iwao ,  Hirofumi Takeguchi

发明人： Junji Nakamura ,  Kousuke Yoshihara ,  Kentaro Yamamura ,  Fumiko Iwao ,  Hirofumi Takeguchi

IPC分类号： B08B7/04

CPC分类号： H01L21/67051 ,  B08B3/02 ,  B08B3/10 ,  G03F7/3021 ,  Y10S134/902

摘要： A cleaning method of cleaning a surface of a substrate that is processed by a developing process. The method includes pouring a cleaning liquid onto a central part of the substrate. A dry area that is not wetted with the cleaning liquid is created in a central part of the substrate by stopping pouring the cleaning liquid or by shifting a cleaning liquid pouring position to which the cleaning liquid is poured from the central part while the substrate holding device is rotating. The dry area is expanded outward from the central part of the substrate by rotating the substrate holding device at a rotating speed not lower than 1500 rpm without pouring the cleaning liquid onto the dry area. The cleaning liquid is poured onto an outer area contiguously surrounding the dry area on the surface of the substrate.

摘要翻译： 清洗通过显影处理处理的基材表面的清洁方法。 该方法包括将清洗液倒入基材的中心部分。 在基板保持装置的中心部分，通过停止注入清洗液体，或者从中央部移动清洗液注入清洗液的位置，形成未被清洗液润湿的干燥区域 正在旋转。 通过以不低于1500rpm的旋转速度旋转基板保持装置，将干燥区域从基板的中心部分向外扩展，而不将清洗液体倾倒到干燥区域上。 将清洗液倒入围绕基材表面的干燥区域的外部区域上。

公开(公告)号：US07604013B2

公开(公告)日：2009-10-20

申请号：US11074781

申请日：2005-03-09

申请人： Junji Nakamura ,  Kousuke Yoshihara ,  Kentaro Yamamura ,  Fumiko Iwao ,  Hirofumi Takeguchi

发明人： Junji Nakamura ,  Kousuke Yoshihara ,  Kentaro Yamamura ,  Fumiko Iwao ,  Hirofumi Takeguchi

IPC分类号： B08B3/00

CPC分类号： H01L21/67051 ,  B08B3/02 ,  B08B3/10 ,  G03F7/3021 ,  Y10S134/902

摘要： A cleaning method highly effectively cleans a surface of a semiconductor wafer by removing a dissolution product, produced when a surface of a semiconductor wafer is processed by a developing process that develops an exposed film formed on the semiconductor wafer by wetting the exposed film with a developer, from the surface of the semiconductor wafer. A cleaning liquid is poured through a cleaning liquid pouring nozzle onto a central part of a rotating wafer processed by a developing process to spread the cleaning liquid in a film over the surface of the wafer. Then, the cleaning liquid pouring nozzle is shifted to create a dry area in a central part of the wafer and the wafer is rotated at 1500 rpm to expand the dry area. The cleaning liquid pouring nozzle is moved at a nozzle moving speed high enough to keep the cleaning liquid pouring position ahead of the margin of the dry area and pouring the cleaning liquid is stopped upon the arrival of the cleaning liquid pouring nozzle at a predetermined position at 80 mm from the center of the wafer or at 5 mm above toward the center of the wafer from the peripheral edge of the wafer. The cleaning liquid may be poured through another cleaning liquid pouring nozzle disposed beforehand at the predetermined position and pouring the cleaning liquid through the cleaning liquid pouring nozzle may be stopped immediately before the margin of the dry area reaches a part onto which the cleaning liquid is poured through the cleaning liquid pouring nozzle. Preferably, a gas is blown instantaneously against the central part of the wafer to form a core fore the dry area.

摘要翻译： 一种清洁方法，通过除去溶解产物，通过除去半导体晶片的表面，通过利用显影处理来处理半导体晶片的表面，所述显影处理通过用显影剂润湿暴露的膜来形成半导体晶片上形成的曝光膜 ，从半导体晶片的表面。 将清洗液通过清洗液倒出嘴注入到通过显影处理处理的旋转晶片的中心部分上，以将清洁液体以薄膜的形式展开在晶片的表面上。 然后，移动清洗液倾倒嘴，在晶片的中心部分产生干燥区域，以1500rpm的速度旋转晶片，使干燥面积扩大。 清洗液倾倒嘴以喷嘴移动速度移动到足够高的水平，以将清洁液注入位于干燥区域的边缘之前，并且在清洁液体倾倒嘴到达预定位置时停止清洗液体的倾倒 距离晶片的中心80mm，或距离晶片的周边边缘朝向晶片中心5mm以上。 清洗液可以通过预先设置在预定位置的另一个清洗液倒出喷嘴注入，并且清洗液通过清洗液倒出嘴可以在干燥区域的边缘到达清洗液倒入的部分之前立即停止 通过清洗液倒出嘴。 优选地，将气体瞬间吹到晶片的中心部分，以在干燥区域之前形成核心。

公开(公告)号：US20060048792A1

公开(公告)日：2006-03-09

申请号：US11074781

申请日：2005-03-09

申请人： Junji Nakamura ,  Kousuke Yoshihara ,  Kentaro Yamamura ,  Fumiko Iwao ,  Hirofumi Takeguchi

发明人： Junji Nakamura ,  Kousuke Yoshihara ,  Kentaro Yamamura ,  Fumiko Iwao ,  Hirofumi Takeguchi

IPC分类号： C23G1/00 ,  C03C23/00

CPC分类号： H01L21/67051 ,  B08B3/02 ,  B08B3/10 ,  G03F7/3021 ,  Y10S134/902

摘要： A cleaning method highly effectively cleans a surface of a semiconductor wafer by removing a dissolution product, produced when a surface of a semiconductor wafer is processed by a developing process that develops an exposed film formed on the semiconductor wafer by wetting the exposed film with a developer, from the surface of the semiconductor wafer. A cleaning liquid is poured through a cleaning liquid pouring nozzle onto a central part of a rotating wafer processed by a developing process to spread the cleaning liquid in a film over the surface of the wafer. Then, the cleaning liquid pouring nozzle is shifted to create a dry area in a central part of the wafer and the wafer is rotated at 1500 rpm to expand the dry area. The cleaning liquid pouring nozzle is moved at a nozzle moving speed high enough to keep the cleaning liquid pouring position ahead of the margin of the dry area and pouring the cleaning liquid is stopped upon the arrival of the cleaning liquid pouring nozzle at a predetermined position at 80 mm from the center of the wafer or at 5 mm above toward the center of the wafer from the peripheral edge of the wafer. The cleaning liquid may be poured through another cleaning liquid pouring nozzle disposed beforehand at the predetermined position and pouring the cleaning liquid through the cleaning liquid pouring nozzle may be stopped immediately before the margin of the dry area reaches a part onto which the cleaning liquid is poured through the cleaning liquid pouring nozzle. Preferably, a gas is blown instantaneously against the central part of the wafer to form a core fore the dry area.

公开(公告)号：US06793793B2

公开(公告)日：2004-09-21

申请号：US10070516

申请日：2002-03-04

申请人： Hideo Yoshida ,  Seizo Miyata ,  Yoshihiro Asai ,  Masato Sone ,  Fumiko Iwao ,  Hiroe Asai

发明人： Hideo Yoshida ,  Seizo Miyata ,  Yoshihiro Asai ,  Masato Sone ,  Fumiko Iwao ,  Hiroe Asai

IPC分类号： C25D500

CPC分类号： C25D3/02 ,  B23H3/08 ,  C23C18/1685 ,  C23C22/18 ,  C23C22/24 ,  C25D5/003 ,  C25D5/34 ,  C25D5/48 ,  C25D11/005 ,  C25D11/02 ,  C25D11/04 ,  C25D13/00 ,  C25D17/02 ,  C25F3/00

摘要： A novel method of electrochemical treatment such as electroplating, etc. and an electrochemical reaction apparatus thereof which is high in reactability and able to be electrochemically reacted efficiently, which is small or zero in amount of generation of liquid waste such as electrolytic solution and cleaning liquid and therefore, amicable to the environment, and in which it is no more required to clean the electrode, etc. with cleaning liquid after reaction. Electrochemical reaction is executed in a reaction vessel (6) containing matter (5) which is in a supercritical or subcritical state and an electrolytic solution (1), and after reaction, the supercritical or subcritical matter (5) is shifted into a state of the matter (5) before being shifted into a critical state.

摘要翻译： 电化学等电化学处理的新方法及其电化学反应装置，其反应性高，能够高效电化学反应，电解液和清洗液等液体废液的产生量小或为零 因此与环境友好，反应后用清洗液清洗电极等不再需要。 在含有超临界或亚临界状态的物质（5）和电解液（1）的反应容器（6）中进行电化学反应，反应后，将超临界或亚临界物质（5）转移到 事情（5）在转入危急状态之前。

公开(公告)号：US08530357B2

公开(公告)日：2013-09-10

申请号：US13521391

申请日：2011-05-06

申请人： Fumiko Iwao

发明人： Fumiko Iwao

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L21/311 ,  H01L21/31 ,  H01L21/469 ,  G03C1/00 ,  G03F7/00

CPC分类号： G03F7/40 ,  G03F7/0035 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/32139

摘要： A method of manufacturing a semiconductor device, which includes forming a resist layer on a substrate, performing an exposure and development process on the resist layer to form a resist pattern, performing a slimming process to slim the resist pattern, forming a mask material layer on side walls of the slimmed resist pattern, and removing the slimmed resist pattern. The slimming process further includes coating an extensive agent on the substrate, expanding the expansive agent, and removing the expanded expansive agent.

摘要翻译： 一种制造半导体器件的方法，包括在衬底上形成抗蚀剂层，在抗蚀剂层上进行曝光和显影处理以形成抗蚀剂图案，进行纤薄化处理以使抗蚀剂图案变薄，形成掩模材料层 薄的抗蚀剂图案的侧壁，并且移除纤细的抗蚀剂图案。 减肥方法还包括在基材上涂覆广泛的试剂，膨胀膨胀剂，以及除去膨胀膨胀剂。