Organic thin film transistor comprising multi-layered gate insulator
    6.
    发明授权
    Organic thin film transistor comprising multi-layered gate insulator 有权
    包括多层栅极绝缘体的有机薄膜晶体管

    公开(公告)号:US07005674B2

    公开(公告)日:2006-02-28

    申请号:US10769816

    申请日:2004-02-03

    Abstract: An organic thin film transistor (OTFT) comprising a gate electrode, a gate insulating film, an organic active layer and a source/drain electrode, or a gate electrode, a gate insulating film, a source/drain electrode and an organic active layer, sequentially formed on a substrate, wherein the gate insulating film is a multi-layered insulator comprising a first layer of a high dielectric material and a second layer of an insulating organic polymer compatible with the organic active layer, the second layer being positioned directly under the organic active layer. The OTFT of the present invention shows low threshold and driving voltages, high charge mobility, and high Ion/Ioff, and it can be prepared by a wet process.

    Abstract translation: 一种有机薄膜晶体管(OTFT),包括栅极,栅极绝缘膜,有机活性层和源极/漏极,或栅电极,栅极绝缘膜,源/漏电极和有机活性层, 依次形成在基板上,其中栅极绝缘膜是包括高介电材料的第一层和与有机活性层相容的绝缘有机聚合物的第二层的多层绝缘体,第二层位于 有机活性层。 本发明的OTFT显示低阈值和驱动电压,高电荷迁移率和高/低电流,并且可以通过湿法制备。

Patent Agency Ranking