公开(公告)号：US20110140220A1

公开(公告)日：2011-06-16

申请号：US12963792

申请日：2010-12-09

Applicant: Michel Marty ,  Didier Dutartre ,  Francois Roy ,  Pascal Besson ,  Jens Prima

Inventor： Michel Marty ,  Didier Dutartre ,  Francois Roy ,  Pascal Besson ,  Jens Prima

IPC: H01L31/0236 ,  H01L31/0232 ,  H01L31/18

CPC classification number: H01L27/14687 ,  H01L21/2007 ,  H01L21/30604 ,  H01L21/76256 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/1812

Abstract: A process for producing a microelectronic device includes producing a first semiconductor substrate which includes a first layer and a second layer present between a first side and a second side of the substrate. First electronic components and an interconnecting part are produced on and above the second side. The substrate is then thinned by a first selective etch applied from the first side and stopping on the first layer followed by a second selective etch stopping on the second layer. A second substrate is attached over the interconnecting part. The electronic components may comprise optoelectronic devices which are illuminated through the second layer.

Abstract translation: 微电子器件的制造方法包括制造第一半导体衬底，该第一半导体衬底包括存在于衬底的第一侧和第二侧之间的第一层和第二层。 第一电子部件和互连部分在第二面上和上方产生。 然后通过从第一侧施加的第一选择性蚀刻将衬底减薄，并停止在第一层上，随后在第二层上进行第二选择性蚀刻停止。 第二衬底附接在互连部分上。 电子部件可以包括通过第二层照射的光电子器件。

公开(公告)号：US08524522B2

公开(公告)日：2013-09-03

申请号：US12963792

申请日：2010-12-09

Applicant: Michel Marty ,  Didier Dutartre ,  Francois Roy ,  Pascal Besson ,  Jens Prima

Inventor： Michel Marty ,  Didier Dutartre ,  Francois Roy ,  Pascal Besson ,  Jens Prima

IPC: H01L21/00 ,  H01L21/46 ,  H01L31/0232 ,  H01L27/148

CPC classification number: H01L27/14687 ,  H01L21/2007 ,  H01L21/30604 ,  H01L21/76256 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/1812

Abstract: A process for producing a microelectronic device includes producing a first semiconductor substrate which includes a first layer and a second layer present between a first side and a second side of the substrate. First electronic components and an interconnecting part are produced on and above the second side. The substrate is then thinned by a first selective etch applied from the first side and stopping on the first layer followed by a second selective etch stopping on the second layer. A second substrate is attached over the interconnecting part. The electronic components may comprise optoelectronic devices which are illuminated through the second layer.

Abstract translation: 微电子器件的制造方法包括制造第一半导体衬底，该第一半导体衬底包括存在于衬底的第一侧和第二侧之间的第一层和第二层。 第一电子部件和互连部分在第二面上和上方产生。 然后通过从第一侧施加的第一选择性蚀刻将衬底减薄，并停止在第一层上，随后在第二层上进行第二选择性蚀刻停止。 第二衬底附接在互连部分上。 电子部件可以包括通过第二层照射的光电子器件。

公开(公告)号：US20070173064A1

公开(公告)日：2007-07-26

申请号：US11223089

申请日：2005-09-09

Applicant: Maud Vinet ,  Pascal Besson ,  Bernard Previtali ,  Christian Vizioz

Inventor： Maud Vinet ,  Pascal Besson ,  Bernard Previtali ,  Christian Vizioz

IPC: C23F1/00 ,  H01L21/302 ,  H01L21/461 ,  C03C25/68

CPC classification number: H01L29/4908 ,  H01L29/66772

Abstract: A process for fabricating a transistor comprising a gate (50′) located in the immediate proximity of a dielectric (46) includes a step of etching a layer of gate material. This gate etching step comprises the following steps: plasma etching of this layer over the major portion of its thickness so as to laterally define the gate (50′); chemical etching of a residual portion (48′) of this layer so as to define this gate as far as the dielectric (46).

Abstract translation: 一种用于制造晶体管的工艺，其包括位于电介质（46）附近的栅极（50'），其包括蚀刻栅极材料层的步骤。 该栅极蚀刻步骤包括以下步骤：在其厚度的主要部分上等离子体蚀刻该层，以横向限定栅极（50'）; 对该层的残留部分（48'）进行化学蚀刻，以便将该栅极限定为电介质（46）。

公开(公告)号：US20100041189A1

公开(公告)日：2010-02-18

申请号：US12559810

申请日：2009-09-15

Applicant: Markus Müller ,  Alexandre Mondot ,  Pascal Besson

Inventor： Markus Müller ,  Alexandre Mondot ,  Pascal Besson

IPC: H01L21/336

CPC classification number: H01L21/31111 ,  H01L21/823814 ,  H01L21/823835 ,  H01L29/66545

Abstract: A method of fabricating a device, including the steps of forming a first silicon oxide layer within a first region of the device and a second silicon oxide layer within a second region of the device, implanting doping ions of a first type into the first region, implanting doping ions of a second type into the second region, and etching the first and second regions for a determined duration such that the first silicon oxide layer is removed and at least a part of the second silicon oxide layer remains.

Abstract translation: 一种制造器件的方法，包括以下步骤：在器件的第一区域内形成第一氧化硅层，在器件的第二区域内形成第二氧化硅层，将第一类型的掺杂离子注入第一区域; 将第二类型的掺杂离子注入到所述第二区域中，以及蚀刻所述第一和第二区域一段确定的持续时间，以使得所述第一氧化硅层被去除并且所述第二氧化硅层的至少一部分保留。

公开(公告)号：US07491644B2

公开(公告)日：2009-02-17

申请号：US11223089

申请日：2005-09-09

Applicant: Maud Vinet ,  Pascal Besson ,  Bernard Previtali ,  Christian Vizioz

Inventor： Maud Vinet ,  Pascal Besson ,  Bernard Previtali ,  Christian Vizioz

IPC: H01L21/44

CPC classification number: H01L29/4908 ,  H01L29/66772

Abstract: A process for fabricating a transistor that includes a gate located in the immediate proximity of a dielectric includes a step of etching a layer of gate material. The gate etching step includes plasma etching of the gate layer over the major portion of its thickness so as to laterally define the gate and chemical etching of a residual portion of the gate layer so as to define the gate as far as the dielectric.

Abstract translation: 包括位于电介质附近的栅极的晶体管的制造方法包括蚀刻栅极材料层的步骤。 栅极蚀刻步骤包括在其厚度的主要部分上的栅极层的等离子体蚀刻，以便横向限定栅极的栅极和化学蚀刻栅极层的残留部分，以便将栅极限定为电介质。

公开(公告)号：US20070256705A1

公开(公告)日：2007-11-08

申请号：US11822547

申请日：2007-07-06

Applicant: Alexandra Abbadie ,  Pascal Besson ,  Marie-Noelle Semeria

Inventor： Alexandra Abbadie ,  Pascal Besson ,  Marie-Noelle Semeria

IPC: C23G1/02

CPC classification number: B08B3/08 ,  C11D7/08 ,  C11D11/0047 ,  H01L21/02052 ,  Y10S134/902

Abstract: Method of wet cleaning a surface of at least one material chosen from silicon, silicon-germanium alloys, A(III)/B(V)-type semiconductors and epitaxially grown crystalline materials, such as germanium, in which method the following successive steps are carried out: a) the surface is brought into contact with an HF solution; b) the surface is rinsed with acidified, deionized water, then a powerful oxidizing agent is added to the deionized water and the rinsing is continued; c) optionally, step a) is repeated, once or twice, while optionally reducing the contacting time; d) step b) is optionally repeated, once or twice; and e) the surface is dried. Process for fabricating an electronic, optical or optoelectronic device, such as a CMOS or MOSFET device, comprising at least one wet cleaning step using the said cleaning method.

公开(公告)号：US07250085B2

公开(公告)日：2007-07-31

申请号：US11026186

申请日：2004-12-29

Applicant: Alexandra Abbadie ,  Pascal Besson ,  Marie-Noëlle Semeria

Inventor： Alexandra Abbadie ,  Pascal Besson ,  Marie-Noëlle Semeria

IPC: C23G1/00

CPC classification number: B08B3/08 ,  C11D7/08 ,  C11D11/0047 ,  H01L21/02052 ,  Y10S134/902

Abstract: Method of wet cleaning a surface of at least one material chosen from silicon, silicon-germanium alloys, A(III)/B(V)-type semiconductors and epitaxially grown crystalline materials, such as germanium, in which method the following successive steps are carried out: a) the surface is brought into contact with an HF solution; b) the surface is rinsed with acidified, deionized water, then a powerful oxidizing agent is added to the deionized water and the rinsing is continued; c) optionally, step a) is repeated, once or twice, while optionally reducing the contacting time; d) step b) is optionally repeated, once or twice; and e) the surface is dried. Process for fabricating an electronic, optical or optoelectronic device, such as a CMOS or MOSFET device, comprising at least one wet cleaning step using the said cleaning method.

Abstract translation: 湿法清洗选自硅，硅 - 锗合金，A（III）/ B（V）型半导体和外延生长的晶体材料如锗的至少一种材料的表面的方法，其中以下连续步骤是 进行：a）使表面与HF溶液接触; b）用酸化的去离子水冲洗表面，然后将强力的氧化剂加入到去离子水中，继续冲洗; c）任选地，重复步骤a）一次或两次，同时可选地减少接触时间; d）步骤b）任选重复一次或两次; 和e）表面被干燥。 用于制造诸如CMOS或MOSFET器件的电子，光学或光电子器件的工艺，其包括使用所述清洁方法的至少一个湿式清洁步骤。

公开(公告)号：US08759174B2

公开(公告)日：2014-06-24

申请号：US12559810

申请日：2009-09-15

Applicant: Markus Müller ,  Alexandre Mondot ,  Pascal Besson

Inventor： Markus Müller ,  Alexandre Mondot ,  Pascal Besson

IPC: H01L21/8238

CPC classification number: H01L21/31111 ,  H01L21/823814 ,  H01L21/823835 ,  H01L29/66545

Abstract: A method of fabricating a device, including the steps of forming a first silicon oxide layer within a first region of the device and a second silicon oxide layer within a second region of the device, implanting doping ions of a first type into the first region, implanting doping ions of a second type into the second region, and etching the first and second regions for a determined duration such that the first silicon oxide layer is removed and at least a part of the second silicon oxide layer remains.

Abstract translation: 一种制造器件的方法，包括以下步骤：在器件的第一区域内形成第一氧化硅层，在器件的第二区域内形成第二氧化硅层，将第一类型的掺杂离子注入第一区域; 将第二类型的掺杂离子注入到所述第二区域中，以及蚀刻所述第一和第二区域一段确定的持续时间，以使得所述第一氧化硅层被去除并且所述第二氧化硅层的至少一部分保留。

公开(公告)号：US07641738B2

公开(公告)日：2010-01-05

申请号：US11822547

申请日：2007-07-06

Applicant: Alexandra Abbadie ,  Pascal Besson ,  Marie-Noëlle Semeria

Inventor： Alexandra Abbadie ,  Pascal Besson ,  Marie-Noëlle Semeria

IPC: C23G1/00

CPC classification number: B08B3/08 ,  C11D7/08 ,  C11D11/0047 ,  H01L21/02052 ,  Y10S134/902

Abstract: A method of wet cleaning a surface is disclosed. The method of wet cleaning a surface of at least one material chosen from silicon, silicon-germanium alloys, A(III)/B(V)-type semiconductors and epitaxially grown crystalline materials, such as germanium, includes the following successive steps: a) the surface is brought into contact with an HF solution; b) the surface is rinsed with acidified, deionized water, then a powerful oxidizing agent is added to the deionized water and the rinsing is continued; c) optionally, step a) is repeated, once or twice, while optionally reducing the contacting time; d) step b) is optionally repeated, once or twice; and e) the surface is dried.

Abstract translation: 公开了一种湿清洁表面的方法。 湿法清洗选自硅，硅 - 锗合金，A（III）/ B（V）型半导体和外延生长的晶体材料如锗的至少一种材料的表面的方法包括以下连续步骤：a ）使表面与HF溶液接触; b）用酸化的去离子水冲洗表面，然后将强力的氧化剂加入到去离子水中，继续冲洗; c）任选地，重复步骤a）一次或两次，同时可选地减少接触时间; d）步骤b）任选重复一次或两次; 和e）表面被干燥。

公开(公告)号：US20070042687A1

公开(公告)日：2007-02-22

申请号：US11481243

申请日：2006-07-05

Applicant: Sebastien Petitdidier ,  Pascal Besson

Inventor： Sebastien Petitdidier ,  Pascal Besson

IPC: B24B7/30 ,  B24B1/00

CPC classification number: B24B37/04 ,  B24B1/00 ,  B24B57/02

Abstract: In a chemical-mechanical polishing machine, polishing product comprising abrasive particles suspended in a reactive liquid is fed to the machine for use in a polishing operation that is divided into at least a first step and a second step. During the second step, the polishing machine is fed via a filter with a product containing fewer large particles than the product feeding the polishing machine during the first step. The feed device may be formed of two parallel lines which are provided with valves. At least one of those lines is provided with the filter.

Abstract translation: 在化学机械抛光机中，包含悬浮在反应性液体中的磨料颗粒的抛光产品被供给到机器中，以用于至少分为至少第一步骤和第二步骤的抛光操作。 在第二步骤中，抛光机通过过滤器进料，该过滤器包含比在第一步骤中供给抛光机器的产品更少的大颗粒的产品。 进料装置可以由设有阀的两条平行管线形成。 这些线路中的至少一个设置有过滤器。