公开(公告)号：US08524522B2

公开(公告)日：2013-09-03

申请号：US12963792

申请日：2010-12-09

申请人： Michel Marty ,  Didier Dutartre ,  Francois Roy ,  Pascal Besson ,  Jens Prima

发明人： Michel Marty ,  Didier Dutartre ,  Francois Roy ,  Pascal Besson ,  Jens Prima

IPC分类号： H01L21/00 ,  H01L21/46 ,  H01L31/0232 ,  H01L27/148

CPC分类号： H01L27/14687 ,  H01L21/2007 ,  H01L21/30604 ,  H01L21/76256 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/1812

摘要： A process for producing a microelectronic device includes producing a first semiconductor substrate which includes a first layer and a second layer present between a first side and a second side of the substrate. First electronic components and an interconnecting part are produced on and above the second side. The substrate is then thinned by a first selective etch applied from the first side and stopping on the first layer followed by a second selective etch stopping on the second layer. A second substrate is attached over the interconnecting part. The electronic components may comprise optoelectronic devices which are illuminated through the second layer.

摘要翻译： 微电子器件的制造方法包括制造第一半导体衬底，该第一半导体衬底包括存在于衬底的第一侧和第二侧之间的第一层和第二层。 第一电子部件和互连部分在第二面上和上方产生。 然后通过从第一侧施加的第一选择性蚀刻将衬底减薄，并停止在第一层上，随后在第二层上进行第二选择性蚀刻停止。 第二衬底附接在互连部分上。 电子部件可以包括通过第二层照射的光电子器件。

公开(公告)号：US20110140220A1

公开(公告)日：2011-06-16

申请号：US12963792

申请日：2010-12-09

申请人： Michel Marty ,  Didier Dutartre ,  Francois Roy ,  Pascal Besson ,  Jens Prima

发明人： Michel Marty ,  Didier Dutartre ,  Francois Roy ,  Pascal Besson ,  Jens Prima

IPC分类号： H01L31/0236 ,  H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/14687 ,  H01L21/2007 ,  H01L21/30604 ,  H01L21/76256 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/1812

摘要： A process for producing a microelectronic device includes producing a first semiconductor substrate which includes a first layer and a second layer present between a first side and a second side of the substrate. First electronic components and an interconnecting part are produced on and above the second side. The substrate is then thinned by a first selective etch applied from the first side and stopping on the first layer followed by a second selective etch stopping on the second layer. A second substrate is attached over the interconnecting part. The electronic components may comprise optoelectronic devices which are illuminated through the second layer.

摘要翻译： 微电子器件的制造方法包括制造第一半导体衬底，该第一半导体衬底包括存在于衬底的第一侧和第二侧之间的第一层和第二层。 第一电子部件和互连部分在第二面上和上方产生。 然后通过从第一侧施加的第一选择性蚀刻将衬底减薄，并停止在第一层上，随后在第二层上进行第二选择性蚀刻停止。 第二衬底附接在互连部分上。 电子部件可以包括通过第二层照射的光电子器件。

公开(公告)号：US08703528B2

公开(公告)日：2014-04-22

申请号：US13445199

申请日：2012-04-12

申请人： Michel Marty ,  François Roy ,  Jens Prima

发明人： Michel Marty ,  François Roy ,  Jens Prima

IPC分类号： H01L21/00

CPC分类号： H01L27/1464 ,  H01L27/1463 ,  H01L27/14683 ,  H01L27/14687 ,  H01L27/14689

摘要： A method for forming a back-side illuminated image sensor, including the steps of: a) forming, from the front surface, doped polysilicon regions, of a conductivity type opposite to that of the substrate, extending in depth orthogonally to the front surface and emerging into the first layer; b) thinning the substrate from its rear surface to reach the polysilicon regions, while keeping a strip of the first layer; c) depositing, on the rear surface of the thinned substrate, a doped amorphous silicon layer, of a conductivity type opposite to that of the substrate; and d) annealing at a temperature capable of transforming the amorphous silicon layer into a crystallized layer.

摘要翻译： 一种用于形成背面照明图像传感器的方法，包括以下步骤：a）从前表面形成与衬底相反的导电类型的掺杂多晶硅区域，其垂直于正面延伸， 进入第一层; b）使衬底从其后表面变薄到达多晶硅区域，同时保持第一层的条带; c）在所述薄化衬底的后表面上沉积与所述衬底相反的导电类型的掺杂非晶硅层; 和d）在能够将非晶硅层转变成结晶层的温度下退火。

公开(公告)号：US20120261670A1

公开(公告)日：2012-10-18

申请号：US13445199

申请日：2012-04-12

申请人： Michel Marty ,  François Roy ,  Jens Prima

发明人： Michel Marty ,  François Roy ,  Jens Prima

IPC分类号： H01L31/0368 ,  H01L31/20

CPC分类号： H01L27/1464 ,  H01L27/1463 ,  H01L27/14683 ,  H01L27/14687 ,  H01L27/14689

摘要： A method for forming a back-side illuminated image sensor, including the steps of: a) forming, from the front surface, doped polysilicon regions, of a conductivity type opposite to that of the substrate, extending in depth orthogonally to the front surface and emerging into the first layer; b) thinning the substrate from its rear surface to reach the polysilicon regions, while keeping a strip of the first layer; c) depositing, on the rear surface of the thinned substrate, a doped amorphous silicon layer, of a conductivity type opposite to that of the substrate; and d) annealing at a temperature capable of transforming the amorphous silicon layer into a crystallized layer.

摘要翻译： 一种用于形成背面照明图像传感器的方法，包括以下步骤：a）从前表面形成与衬底相反的导电类型的掺杂多晶硅区域，其垂直于正面延伸， 进入第一层; b）使衬底从其后表面变薄到达多晶硅区域，同时保持第一层的条带; c）在所述薄化衬底的后表面上沉积与所述衬底相反的导电类型的掺杂非晶硅层; 和d）在能够将非晶硅层转变成结晶层的温度下退火。

公开(公告)号：US20120261732A1

公开(公告)日：2012-10-18

申请号：US13445013

申请日：2012-04-12

申请人： Michel Marty ,  François Roy ,  Jens Prima

发明人： Michel Marty ,  François Roy ,  Jens Prima

IPC分类号： H01L31/113 ,  H01L31/18

CPC分类号： H01L27/14689 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687

摘要： A method for forming a back-side illuminated image sensor from a semiconductor substrate, including the steps of: a) thinning the substrate from its rear surface; b) depositing, on the rear surface of the thinned substrate, an amorphous silicon layer of same conductivity type as the substrate but of higher doping level; and c) annealing at a temperature enabling to recrystallized the amorphous silicon to stabilize it.

摘要翻译： 一种用于从半导体衬底形成背面照明图像传感器的方法，包括以下步骤：a）从其后表面减薄衬底; b）在薄化衬底的后表面上沉积与衬底相同导电类型但具有较高掺杂水平的非晶硅层; 和c）在能够使非晶硅重结晶以使其稳定的温度下进行退火。

公开(公告)号：US08981516B2

公开(公告)日：2015-03-17

申请号：US13445222

申请日：2012-04-12

申请人： Jens Prima ,  François Roy ,  Michel Marty

发明人： Jens Prima ,  François Roy ,  Michel Marty

IPC分类号： H01L21/00 ,  H01L27/146

CPC分类号： H01L27/14603 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643

摘要： A back-side illuminated image sensor formed from a thinned semiconductor substrate, wherein: a transparent conductive electrode, insulated from the substrate by an insulating layer, extends over the entire rear surface of the substrate; and conductive regions, insulated from the substrate by an insulating coating, extend perpendicularly from the front surface of the substrate to the electrode.

摘要翻译： 一种由薄化的半导体衬底形成的背面照明图像传感器，其中：通过绝缘层与衬底绝缘的透明导电电极在衬底的整个后表面上延伸; 并且通过绝缘涂层与基板绝缘的导电区域从基板的前表面垂直延伸到电极。

公开(公告)号：US08704282B2

公开(公告)日：2014-04-22

申请号：US13445013

申请日：2012-04-12

申请人： Michel Marty ,  François Roy ,  Jens Prima

发明人： Michel Marty ,  François Roy ,  Jens Prima

IPC分类号： H01L31/113 ,  H01L31/18

CPC分类号： H01L27/14689 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687

摘要： A method for forming a back-side illuminated image sensor from a semiconductor substrate, including the steps of: a) thinning the substrate from its rear surface; b) depositing, on the rear surface of the thinned substrate, an amorphous silicon layer of same conductivity type as the substrate but of higher doping level; and c) annealing at a temperature enabling to recrystallized the amorphous silicon to stabilize it.

摘要翻译： 一种用于从半导体衬底形成背面照明图像传感器的方法，包括以下步骤：a）从其后表面减薄衬底; b）在薄化衬底的后表面上沉积与衬底相同导电类型但具有较高掺杂水平的非晶硅层; 和c）在能够使非晶硅重结晶以使其稳定的温度下进行退火。

公开(公告)号：US08847344B2

公开(公告)日：2014-09-30

申请号：US13483274

申请日：2012-05-30

申请人： Francois Roy ,  Francois Leverd ,  Jens Prima

发明人： Francois Roy ,  Francois Leverd ,  Jens Prima

IPC分类号： H01L31/0232 ,  H01L27/146

CPC分类号： H01L27/14632 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

摘要： An integrated imaging device includes a silicon layer provided over a dielectric multilayer. The dielectric multilayer includes a top silicon-dioxide layer, an intermediate silicon-nitride layer and a bottom silicon-dioxide layer. Imaging circuitry is formed at a frontside of the silicon layer. An isolating structure surrounds the imaging circuitry and extends from the frontside through the silicon layer and top silicon-dioxide layer into and terminating within the intermediate silicon-nitride layer. A filter for the imaging circuitry is mounted to a backside of the bottom silicon-dioxide layer. The isolating structure is formed by a trench filled with a dielectric material.

摘要翻译： 集成成像装置包括设置在电介质多层上的硅层。 电介质层包括顶部二氧化硅层，中间氮化硅层和底部二氧化硅层。 成像电路形成在硅层的前侧。 隔离结构围绕成像电路并从前侧穿过硅层和顶部二氧化硅层延伸到中间氮化硅层内并终止于中间氮化硅层内。 用于成像电路的滤光器安装在底部二氧化硅层的背面。 隔离结构由填充有电介质材料的沟槽形成。

公开(公告)号：US20120306035A1

公开(公告)日：2012-12-06

申请号：US13483274

申请日：2012-05-30

申请人： Francois Roy ,  Francois Leverd ,  Jens Prima

发明人： Francois Roy ,  Francois Leverd ,  Jens Prima

IPC分类号： H01L27/146 ,  H01L31/18

CPC分类号： H01L27/14632 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

摘要： An integrated imaging device includes a silicon layer provided over a dielectric multilayer. The dielectric multilayer includes a top silicon-dioxide layer, an intermediate silicon-nitride layer and a bottom silicon-dioxide layer. Imaging circuitry is formed at a frontside of the silicon layer. An isolating structure surrounds the imaging circuitry and extends from the frontside through the silicon layer and top silicon-dioxide layer into and terminating within the intermediate silicon-nitride layer. A filter for the imaging circuitry is mounted to a backside of the bottom silicon-dioxide layer. The isolating structure is formed by a trench filled with a dielectric material.

摘要翻译： 集成成像装置包括设置在电介质多层上的硅层。 电介质层包括顶部二氧化硅层，中间氮化硅层和底部二氧化硅层。 成像电路形成在硅层的前侧。 隔离结构围绕成像电路并从前侧穿过硅层和顶部二氧化硅层延伸到中间氮化硅层内并终止于中间氮化硅层内。 用于成像电路的滤光器安装在底部二氧化硅层的背面。 隔离结构由填充有电介质材料的沟槽形成。

公开(公告)号：US20090140363A1

公开(公告)日：2009-06-04

申请号：US11335908

申请日：2006-01-13

申请人： Jens Prima ,  Francois Roy

发明人： Jens Prima ,  Francois Roy

IPC分类号： H01L31/0216

CPC分类号： H01L27/14643 ,  H01L27/14603 ,  H01L31/02005 ,  H01L31/02164 ,  H01L31/022408 ,  H01L31/03762

摘要： An optical semiconductor device includes, in a zone (5), a structure of photosensitive diodes including a matrix (6) of lower electrodes (7), an intermediate layer (9) made of a photosensitive material formed on the matrix of lower electrodes and at least one upper electrode (10a) formed on the intermediate layer, in which an electrical connection (3a) includes at least one electrical contact pad (7a) and at least one electrical connection pad (16a) are produced beneath the intermediate layer, at least one electrical connection via (14) is produced through the intermediate layer and connects the upper electrode to the electrical contact pad and at least one well (15a) is formed outside the zone (5) and passes through at least the intermediate layer (9) in order to expose the electrical connection pad (16a). Also provided is a process for fabricating such a device.

摘要翻译： 光学半导体器件在区域（5）中包括感光二极管的结构，该感光二极管包括下电极（7）的基体（6），由形成在下电极的基体上的感光材料制成的中间层（9） 形成在中间层上的至少一个上电极（10a），其中电连接（3a）包括至少一个电接触焊盘（7a）和至少一个电连接焊盘（16a），在中间层下面，在 通过中间层产生至少一个电连接（14），并将上部电极连接到电接触焊盘，并且至少一个阱（15a）形成在区域（5）的外部，并至少穿过中间层（9） ）以暴露电连接垫（16a）。 还提供了制造这种装置的方法。