公开(公告)号：US09068814B2

公开(公告)日：2015-06-30

申请号：US12285674

申请日：2008-10-10

申请人： Taro Takahashi ,  Yoichi Kobayashi ,  Shinrou Ohta ,  Akihiko Ogawa

发明人： Taro Takahashi ,  Yoichi Kobayashi ,  Shinrou Ohta ,  Akihiko Ogawa

IPC分类号： G01B7/06

CPC分类号： G01B7/105

摘要： A method monitors a change in thickness of a conductive film brought into sliding contact with a polishing surface of a polishing pad using an eddy current sensor. The output signal of the eddy current sensor includes two signals corresponding to a resistance component and an inductive reactance component of an impedance of an electric circuit including a coil of the eddy current sensor. The method includes acquiring the output signal of the eddy current sensor when the eddy current sensor is facing the conductive film, defining the two signals as coordinates on a coordinate system, repeating the acquiring of the output signal and the defining of the coordinates, determining a center of curvature of an arc specified by at least three sets of coordinates on the coordinate system, determining an angle of inclination of a line connecting the center of curvature and a latest one of the at least three sets of coordinates, and monitoring a change in thickness of the conductive film by monitoring a change in the angle of inclination.

摘要翻译： 一种方法使用涡流传感器监测与抛光垫的抛光表面滑动接触的导电膜的厚度变化。 涡电流传感器的输出信号包括对应于包括涡流传感器的线圈的电路的阻抗的电阻分量和电抗分量的两个信号。 该方法包括当涡流传感器面向导电膜时获取涡流传感器的输出信号，将两个信号定义为坐标系上的坐标，重复获取输出信号和定义坐标，确定 由坐标系上的至少三组坐标指定的圆弧的曲率中心，确定连接曲率中心的直线和最小三个坐标系中的最近一个的线的倾斜角度， 通过监测倾斜角度的变化来确定导电膜的厚度。

公开(公告)号：US20110081829A1

公开(公告)日：2011-04-07

申请号：US12897973

申请日：2010-10-05

申请人： Shinrou OHTA ,  Atsushi Shigeta

发明人： Shinrou OHTA ,  Atsushi Shigeta

IPC分类号： B24B49/00

CPC分类号： B24B37/013 ,  B24B37/042

摘要： Method and apparatus for detecting an accurate polishing endpoint of a substrate based on a change in polishing rate are provided. The method includes: applying a light to the surface of the substrate and receiving a reflected light from the substrate; obtaining a plurality of spectral profiles at predetermined time intervals, each spectral profile indicating reflection intensity at each wavelength of the reflected light; selecting at least one pair of spectral profiles, including a latest spectral profile, from the plurality of spectral profiles obtained; calculating a difference in the reflection intensity at a predetermined wavelength between the spectral profiles selected; determining an amount of change in the reflection intensity from the difference; and determining a polishing endpoint based on the amount of change.

摘要翻译： 提供了用于基于抛光速率的变化来检测基板的精确抛光终点的方法和装置。 该方法包括：将光施加到衬底的表面并接收来自衬底的反射光; 以预定的时间间隔获得多个光谱轮廓，每个光谱轮廓指示反射光的每个波长处的反射强度; 从所获得的多个光谱分布中选择至少一对光谱分布，包括最新的光谱分布; 计算所选择的光谱轮廓之间的预定波长处的反射强度的差; 从所述差确定反射强度的变化量; 以及基于变化量确定抛光端点。

公开(公告)号：US07214122B2

公开(公告)日：2007-05-08

申请号：US11274112

申请日：2005-11-16

申请人： Kazuto Hirokawa ,  Shunsuke Nakai ,  Shinrou Ohta ,  Yutaka Wada ,  Yoichi Kobayashi

发明人： Kazuto Hirokawa ,  Shunsuke Nakai ,  Shinrou Ohta ,  Yutaka Wada ,  Yoichi Kobayashi

IPC分类号： B24B49/00

CPC分类号： B24B37/205 ,  B24B37/013 ,  B24B49/12 ,  H01L21/30625

摘要： A substrate polishing apparatus is used to polish a surface of a substrate such as a semiconductor wafer to a flat mirror finish. The substrate polishing apparatus has a polishing table and a polishing pad mounted on the polishing table for polishing a semiconductor substrate. The polishing pad has a through hole formed therein. The substrate polishing apparatus also has a light emission and reception device for emitting measurement light through the through hole formed in the polishing pad to the semiconductor substrate and receiving reflected light from the semiconductor substrate so as to measure a film on the semiconductor substrate. The light emission and reception device is disposed in the polishing table. The substrate polishing apparatus includes a supply passage for supplying a fluid to a path of the measurement light. The supply passage has an outlet portion detachably mounted on the polishing table. The substrate polishing apparatus also includes a protection cover mounted on the polishing table and fitted into the through hole when the polishing pad is attached to the polishing table.

摘要翻译： 基板抛光装置用于将诸如半导体晶片的基板的表面抛光到平面镜面。 基板研磨装置具有安装在研磨台上的用于研磨半导体基板的研磨台和研磨垫。 抛光垫在其中形成有通孔。 基板研磨装置还具有发光和接收装置，用于通过形成在抛光垫中的通孔将测量光发射到半导体衬底并接收来自半导体衬底的反射光，以测量半导体衬底上的膜。 发光和接收装置设置在抛光台中。 衬底抛光装置包括用于将流体供应到测量光的路径的供给通道。 供给通道具有可拆卸地安装在抛光台上的出口部分。 衬底抛光装置还包括安装在抛光台上并当抛光垫附接到抛光台时装配到通孔中的保护盖。

公开(公告)号：US07960188B2

公开(公告)日：2011-06-14

申请号：US12465024

申请日：2009-05-13

申请人： Shinrou Ohta ,  Mitsuo Tada ,  Noburu Shimizu ,  Yoichi Kobayashi ,  Taro Takahashi ,  Eisaku Hayashi ,  Hiromitsu Watanabe ,  Tatsuya Kohama ,  Itsuki Kobata

发明人： Shinrou Ohta ,  Mitsuo Tada ,  Noburu Shimizu ,  Yoichi Kobayashi ,  Taro Takahashi ,  Eisaku Hayashi ,  Hiromitsu Watanabe ,  Tatsuya Kohama ,  Itsuki Kobata

IPC分类号： H01L21/00 ,  H01L21/302 ,  G01R31/26

CPC分类号： H01L22/26 ,  H01L21/3212 ,  H01L21/67219 ,  H01L22/14

摘要： A method for polishing a substrate having a metal film thereon is described. The substrate has metal interconnects formed from part of the metal film. The polishing method includes performing a first polishing process of removing the metal film, after the first polishing process, performing a second polishing process of removing the barrier film, after the second polishing process, performing a third polishing process of polishing the insulating film. During the second polishing process and the third polishing process, a polishing state of the substrate is monitored with an eddy current sensor, and the third polishing process is terminated when an output signal of the eddy current sensor reaches a predetermined threshold.

摘要翻译： 描述了在其上抛光具有金属膜的基板的方法。 基板具有由金属膜的一部分形成的金属互连。 抛光方法包括进行第一抛光处理，在第一抛光处理之后，在第二抛光处理之后进行去除阻挡膜的第二抛光工艺，进行抛光绝缘膜的第三抛光工艺。 在第二抛光工艺和第三抛光工艺期间，用涡流传感器监测衬底的抛光状态，并且当涡流传感器的输出信号达到预定阈值时，第三抛光处理结束。

公开(公告)号：US20090286332A1

公开(公告)日：2009-11-19

申请号：US12465024

申请日：2009-05-13

申请人： Shinrou OHTA ,  Mitsuo Tada ,  Noburu Shimizu ,  Yoichi Kobayashi ,  Taro Takahashi ,  Eisaku Hayashi ,  Hiromitsu Watanabe ,  Tatsuya Kohama ,  Itsuki Kobata

发明人： Shinrou OHTA ,  Mitsuo Tada ,  Noburu Shimizu ,  Yoichi Kobayashi ,  Taro Takahashi ,  Eisaku Hayashi ,  Hiromitsu Watanabe ,  Tatsuya Kohama ,  Itsuki Kobata

IPC分类号： H01L21/66

CPC分类号： H01L22/26 ,  H01L21/3212 ,  H01L21/67219 ,  H01L22/14

摘要： A method for polishing a substrate having a metal film thereon is described. The substrate has metal interconnects formed from part of the metal film. The polishing method includes performing a first polishing process of removing the metal film, after the first polishing process, performing a second polishing process of removing the barrier film, after the second polishing process, performing a third polishing process of polishing the insulating film, during the second polishing process and the third polishing process, monitoring a polishing state of the substrate with an eddy current sensor, and terminating the third polishing process when an output signal of the eddy current sensor reaches a predetermined threshold.

摘要翻译： 描述了在其上抛光具有金属膜的基板的方法。 基板具有由金属膜的一部分形成的金属互连。 抛光方法包括：进行第一抛光处理后的第一抛光处理，在第一抛光处理之后，在第二抛光处理之后执行去除阻挡膜的第二抛光工艺，进行抛光绝缘膜的第三抛光处理 第二抛光工艺和第三抛光工艺，用涡流传感器监测衬底的抛光状态，并且当涡流传感器的输出信号达到预定阈值时终止第三抛光处理。

公开(公告)号：US07507144B2

公开(公告)日：2009-03-24

申请号：US11727727

申请日：2007-03-28

申请人： Kazuto Hirokawa ,  Shunsuke Nakai ,  Shinrou Ohta ,  Yutaka Wada ,  Yoichi Kobayashi

发明人： Kazuto Hirokawa ,  Shunsuke Nakai ,  Shinrou Ohta ,  Yutaka Wada ,  Yoichi Kobayashi

IPC分类号： B24B49/00

CPC分类号： B24B37/205 ,  B24B37/013 ,  B24B49/12 ,  H01L21/30625

摘要： A substrate polishing apparatus is used to polish a surface of a substrate such as a semiconductor wafer to a flat mirror finish. The substrate polishing apparatus has a polishing table and a polishing pad mounted on the polishing table for polishing a semiconductor substrate. The polishing pad has a through hole formed therein. The substrate polishing apparatus also has a light emission and reception device for emitting measurement light through the through hole formed in the polishing pad to the semiconductor substrate and receiving reflected light from the semiconductor substrate so as to measure a film on the semiconductor substrate. The light emission and reception device is disposed in the polishing table. The substrate polishing apparatus includes a supply passage for supplying a fluid to a path of the measurement light. The supply passage has an outlet portion detachably mounted on the polishing table. The substrate polishing apparatus also includes a protection cover mounted on the polishing table and fitted into the through hole when the polishing pad is attached to the polishing table.

摘要翻译： 基板抛光装置用于将诸如半导体晶片的基板的表面抛光到平面镜面。 基板研磨装置具有安装在研磨台上的用于研磨半导体基板的研磨台和研磨垫。 抛光垫在其中形成有通孔。 基板研磨装置还具有发光和接收装置，用于通过形成在抛光垫中的通孔将测量光发射到半导体衬底并接收来自半导体衬底的反射光，以测量半导体衬底上的膜。 发光和接收装置设置在抛光台中。 衬底抛光装置包括用于将流体供应到测量光的路径的供给通道。 供给通道具有可拆卸地安装在抛光台上的出口部分。 衬底抛光装置还包括安装在抛光台上并当抛光垫附接到抛光台时装配到通孔中的保护盖。

公开(公告)号：US20060105679A1

公开(公告)日：2006-05-18

申请号：US11274112

申请日：2005-11-16

申请人： Kazuto Hirokawa ,  Shunsuke Nakai ,  Shinrou Ohta ,  Yutaka Wada ,  Yoichi Kobayashi

发明人： Kazuto Hirokawa ,  Shunsuke Nakai ,  Shinrou Ohta ,  Yutaka Wada ,  Yoichi Kobayashi

IPC分类号： B24B49/00

CPC分类号： B24B37/205 ,  B24B37/013 ,  B24B49/12 ,  H01L21/30625

摘要： A substrate polishing apparatus is used to polish a surface of a substrate such as a semiconductor wafer to a flat mirror finish. The substrate polishing apparatus has a polishing table and a polishing pad mounted on the polishing table for polishing a semiconductor substrate. The polishing pad has a through hole formed therein. The substrate polishing apparatus also has a light emission and reception device for emitting measurement light through the through hole formed in the polishing pad to the semiconductor substrate and receiving reflected light from the semiconductor substrate so as to measure a film on the semiconductor substrate. The light emission and reception device is disposed in the polishing table. The substrate polishing apparatus includes a supply passage for supplying a fluid to a path of the measurement light. The supply passage has an outlet portion detachably mounted on the polishing table. The substrate polishing apparatus also includes a protection cover mounted on the polishing table and fitted into the through hole when the polishing pad is attached to the polishing table.

公开(公告)号：US20140030826A1

公开(公告)日：2014-01-30

申请号：US13556568

申请日：2012-07-24

申请人： Shinrou Ohta ,  Toshikazu Nomura ,  Takeshi Iizumi

发明人： Shinrou Ohta ,  Toshikazu Nomura ,  Takeshi Iizumi

IPC分类号： H01L21/66

CPC分类号： H01L22/14 ,  B24B37/013 ,  B24B37/042 ,  B24B49/105 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/7684 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of polishing a wafer having a Ru film and a Ta film or TaN film beneath the Ru film is provided. This polishing method includes: polishing the Ru film by bringing the wafer into sliding contact with a polishing pad; measuring a thickness of the Ru film by a film thickness sensor while polishing the Ru film; calculating a derivative value of an output value of the film thickness sensor; detecting a predetermined point of change in the derivative value; and determining a removal point of the Ru film from a point of time when the point of change is detected.

摘要翻译： 提供了在Ru膜下方研磨具有Ru膜和Ta膜或TaN膜的晶片的方法。 该抛光方法包括：通过使晶片与抛光垫滑动接触来研磨Ru膜; 在研磨Ru膜的同时通过膜厚传感器测量Ru膜的厚度; 计算膜厚传感器的输出值的导数值; 检测所述导数值的预定变化点; 并且从检测到变化点的时间点确定Ru膜的去除点。

公开(公告)号：US08157616B2

公开(公告)日：2012-04-17

申请号：US12476427

申请日：2009-06-02

申请人： Noburu Shimizu ,  Shinrou Ohta

发明人： Noburu Shimizu ,  Shinrou Ohta

IPC分类号： B24B49/12

CPC分类号： B24B37/013 ,  B24B49/02 ,  B24B49/12

摘要： A method for detecting an end point of a polishing operation (e.g., a polishing stop point or a changing point of polishing conditions) of a film of a substrate is described. The method includes applying light to a surface of a substrate during polishing of the substrate; receiving reflected light from the surface of the substrate, monitoring a first characteristic value and a second characteristic value calculated from reflection intensities at different wavelengths; detecting a point when an extremal point of the first characteristic value and an extremal point of the second characteristic value appear within a predetermined time difference; after detecting the point, detecting a predetermined extremal point of the first characteristic value or the second characteristic value; and determining a polishing end point based on a point when the predetermined extremal point is detected.

摘要翻译： 描述了用于检测基板的膜的抛光操作的终点（例如抛光停止点或抛光条件的改变点）的方法。 该方法包括在衬底的抛光期间将光施加到衬底的表面; 从基板的表面接收反射光，监测由不同波长的反射强度计算的第一特征值和第二特征值; 当所述第一特征值的极值点和所述第二特征值的极值出现在预定时间差内时，检测点; 在检测到所述点之后，检测所述第一特征值或所述第二特征值的预定极值点; 以及基于当检测到所述预定极值点时的点来确定抛光终点。

公开(公告)号：US07547242B2

公开(公告)日：2009-06-16

申请号：US10558257

申请日：2004-05-19

申请人： Kazuto Hirokawa ,  Yoichi Kobayashi ,  Shunsuke Nakai ,  Shinrou Ohta ,  Yasuo Tsukuda

发明人： Kazuto Hirokawa ,  Yoichi Kobayashi ,  Shunsuke Nakai ,  Shinrou Ohta ,  Yasuo Tsukuda

IPC分类号： B24B49/00 ,  B24B29/00

CPC分类号： B24B37/013 ,  B24B37/205 ,  B24B49/08 ,  B24B49/12 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

摘要： A substrate polishing apparatus polishes a substrate to a flat mirror finish. The substrate polishing apparatus has a polishing table against which a substrate is pressed, a light-emitting and light-receiving device to emit measurement light from the polishing table to the substrate and to receive reflected light from the substrate for measuring a film on the substrate, a fluid supply passage for supplying a measurement fluid, through which the measurement light and the reflected light pass, to a fluid chamber provided at a light-emitting and light-receiving position of the polishing table, and a fluid supply control device for controlling supply of the measurement fluid to the fluid chamber.

摘要翻译： 基板研磨装置将基板抛光成平面镜面。 基板研磨装置具有：被加压基板的研磨台，发光和受光装置，用于将来自研磨台的测量光发射到基板，并接收来自基板的反射光，以测量基板上的膜 用于将测量光和反射光通过的测量流体供应到设置在抛光台的发光和光接收位置处的流体室的流体供给通道和用于控制的流体供应控制装置 将测量流体供应到流体室。