公开(公告)号：US09203015B2

公开(公告)日：2015-12-01

申请号：US14015966

申请日：2013-08-30

申请人： Hisanori Aikawa ,  Masayoshi Iwayama ,  Akiyuki Murayama ,  Sumio Ikegawa

发明人： Hisanori Aikawa ,  Masayoshi Iwayama ,  Akiyuki Murayama ,  Sumio Ikegawa

IPC分类号： H01L21/02 ,  H01L43/12 ,  H01L43/08

CPC分类号： H01L43/12 ,  H01L43/08

摘要： According to one embodiment, a magnetic storage device includes an insulating region, a lower electrode including a first portion formed in a hole provided in the insulating region and a second portion protruded from the insulating region, a spacer insulating film formed on a side surface of at least the second portion of the lower electrode, a magnetic tunneling junction portion formed on a top surface of the lower electrode, and an upper electrode formed on the magnetic tunneling junction portion.

摘要翻译： 根据一个实施例，磁存储装置包括绝缘区域，下电极，包括形成在设置在绝缘区域中的孔中的第一部分和从绝缘区域突出的第二部分;隔离绝缘膜，形成在绝缘区域的侧表面上; 至少下电极的第二部分，形成在下电极的顶表面上的磁隧道连接部分和形成在磁隧道连接部分上的上电极。

公开(公告)号：US20150263264A1

公开(公告)日：2015-09-17

申请号：US14479163

申请日：2014-09-05

申请人： Keiji HOSOTANI ,  Sumio IKEGAWA ,  Tatsuya KISHI

发明人： Keiji HOSOTANI ,  Sumio IKEGAWA ,  Tatsuya KISHI

IPC分类号： H01L43/02 ,  H01L43/12 ,  H01L27/22 ,  H01L43/08

CPC分类号： H01L43/02 ,  H01L27/222 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： According to one embodiment, a semiconductor memory device comprises a memory cell array. The memory cell array has a plurality of magnetic tunnel junction (MTJ) elements. Each of the MTJ elements has a first magnetic layer, a second magnetic layer and a non-magnetic layer therebetween, and a hard mask layer is arranged above the second magnetic layer. The plurality of MTJ elements have a first MTJ element having a first hard mask layer and a second MTJ element having a second hard mask layer, and a dimension of, the first hard mask layer is greater than that of the second hard mask layer.

摘要翻译： 根据一个实施例，半导体存储器件包括存储单元阵列。 存储单元阵列具有多个磁性隧道结（MTJ）元件。 MTJ元件中的每一个都具有第一磁性层，第二磁性层和非磁性层，硬掩模层设置在第二磁性层的上方。 多个MTJ元件具有具有第一硬掩模层的第一MTJ元件和具有第二硬掩模层的第二MTJ元件，第一硬掩模层的尺寸大于第二硬掩模层的尺寸。

公开(公告)号：US08472242B2

公开(公告)日：2013-06-25

申请号：US12748785

申请日：2010-03-29

申请人： Naoharu Shimomura ,  Eiji Kitagawa ,  Sumio Ikegawa ,  Yoshihisa Iwata

发明人： Naoharu Shimomura ,  Eiji Kitagawa ,  Sumio Ikegawa ,  Yoshihisa Iwata

IPC分类号： G11C11/14

CPC分类号： G11C11/1673 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/1693

摘要： A magnetoresistive effect memory of an aspect of the present invention including a magnetoresistive effect element including a first magnetic layer having an invariable magnetization direction, a second magnetic layer having a variable magnetization direction, and an interlayer provided between the first magnetic layer and the second magnetic layer, and a reading circuit which passes a pulse-shaped read current through the magnetoresistive effect element to read data stored in the magnetoresistive effect element, wherein the pulse width of the read current is shorter than a period from an initial state to a cooperative coherent precession movement of magnetizations included in the second magnetic layer.

摘要翻译： 本发明的磁阻效应存储器包括磁阻效应元件，该磁阻效应元件包括具有不变磁化方向的第一磁性层，具有可变磁化方向的第二磁性层，以及设置在第一磁性层和第二磁性层之间的中间层 以及读取电路，其使脉冲形读取电流通过磁阻效应元件以读取存储在磁阻效应元件中的数据，其中读取电流的脉冲宽度短于从初始状态到协作相干的周期 包括在第二磁性层中的磁化的进动运动。

公开(公告)号：US08279663B2

公开(公告)日：2012-10-02

申请号：US13184976

申请日：2011-07-18

申请人： Masahiko Nakayama ,  Tadashi Kai ,  Sumio Ikegawa ,  Hiroaki Yoda ,  Tatsuya Kishi

发明人： Masahiko Nakayama ,  Tadashi Kai ,  Sumio Ikegawa ,  Hiroaki Yoda ,  Tatsuya Kishi

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/226

摘要： A magnetoresistance effect element includes: a first ferromagnetic layer having invariable magnetization perpendicular to a film plane; a second ferromagnetic layer having variable magnetization perpendicular to the film plane; a first nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer; a third ferromagnetic layer provided on an opposite side of the second ferromagnetic layer from the first nonmagnetic layer, and having variable magnetization parallel to the film plane; and a second nonmagnetic layer interposed between the second and third ferromagnetic layers. Spin-polarized electrons are injected into the second ferromagnetic layer by flowing a current in the direction perpendicular to the film planes between the first and third ferromagnetic layers, precession movement is induced in the magnetization of the third ferromagnetic layer by injecting the spin-polarized electrons, and a microwave magnetic field of a frequency corresponding to the precession movement is applied to the second ferromagnetic layer.

摘要翻译： 磁阻效应元件包括：具有垂直于膜平面的不变磁化的第一铁磁层; 具有垂直于膜平面的可变磁化的第二铁磁层; 介于所述第一铁磁层和所述第二铁磁层之间的第一非磁性层; 第三铁磁层，其设置在所述第二铁磁层的与所述第一非磁性层相反的一侧上，并且具有与所述膜平面平行的可变磁化强度; 以及插入在第二和第三铁磁层之间的第二非磁性层。 通过在垂直于第一和第三铁磁层之间的膜平面的方向上流动电流，将旋转极化电子注入到第二铁磁层中，通过注入自旋极化电子在第三铁磁层的磁化中引起进动运动 并且将对应于进动运动的频率的微波磁场施加到第二铁磁层。

公开(公告)号：US08223533B2

公开(公告)日：2012-07-17

申请号：US12556883

申请日：2009-09-10

申请人： Jyunichi Ozeki ,  Naoharu Shimomura ,  Sumio Ikegawa ,  Tadashi Kai ,  Masahiko Nakayama ,  Hisanori Aikawa ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Eiji Kitagawa ,  Masatoshi Yoshikawa

发明人： Jyunichi Ozeki ,  Naoharu Shimomura ,  Sumio Ikegawa ,  Tadashi Kai ,  Masahiko Nakayama ,  Hisanori Aikawa ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Eiji Kitagawa ,  Masatoshi Yoshikawa

IPC分类号： G11C11/00

CPC分类号： H01L27/228 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/5607 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3277 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08

摘要： A magnetic memory includes a magnetoresistive effect device comprising: a first ferromagnetic layer that has magnetic anisotropy in a direction perpendicular to a film plane thereof; a first nonmagnetic layer that is provided on the first ferromagnetic layer; a first reference layer that is provided on the first nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, has magnetization antiparallel to a magnetization direction of the first ferromagnetic layer, and has a film thickness that is 1/5.2 to 1/1.5 times as large as a film thickness of the first ferromagnetic layer in the direction perpendicular to the film plane; a second nonmagnetic layer that is provided on the first reference layer; and a storage layer that is provided on the second nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, and has a magnetization direction varied by spin-polarized electrons caused by flowing the current to the magnetoresistive effect device.

摘要翻译： 磁存储器包括磁阻效应器件，包括：在垂直于其膜平面的方向上具有磁各向异性的第一铁磁层; 设置在第一铁磁层上的第一非磁性层; 设置在第一非磁性层上的第一参考层在垂直于其膜平面的方向上具有磁各向异性，具有与第一铁磁层的磁化方向反平行的磁化，并且具有1 / 5.2〜 在第一铁磁层的垂直于膜平面的方向上的膜厚度的1/15倍; 设置在第一参考层上的第二非磁性层; 并且设置在第二非磁性层上的存储层在垂直于其膜平面的方向上具有磁各向异性，并且由于使电流流向磁阻效应器而引起的由自旋极化电子变化的磁化方向。

公开(公告)号：US20110116305A1

公开(公告)日：2011-05-19

申请号：US13013141

申请日：2011-01-25

申请人： Makoto NAGAMINE ,  Toshihiko Nagase ,  Sumio Ikegawa ,  Katsuya Nishiyama ,  Masatoshi Yoshikawa

发明人： Makoto NAGAMINE ,  Toshihiko Nagase ,  Sumio Ikegawa ,  Katsuya Nishiyama ,  Masatoshi Yoshikawa

IPC分类号： G11C11/15 ,  H01L29/82

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/224 ,  H01L27/228

摘要： A magnetoresistive element includes a first magnetic layer which includes a first surface and a second surface and has a first standard electrode potential, a second magnetic layer, a barrier layer which is provided between the second magnetic layer and the first surface of the first magnetic layer, and a nonmagnetic cap layer which contacts the second surface of the first magnetic layer and is formed from an alloy of a first metal material and a second metal material, the first metal material having a second standard electrode potential lower than the first standard electrode potential, the second metal material having a third standard electrode potential higher than the first standard electrode potential.

摘要翻译： 磁阻元件包括第一磁性层，其包括第一表面和第二表面，并且具有第一标准电极电位，第二磁性层，设置在第二磁性层和第一磁性层的第一表面之间的阻挡层 以及非磁性覆盖层，其与所述第一磁性层的第二表面接触并且由第一金属材料和第二金属材料的合金形成，所述第一金属材料具有低于所述第一标准电极电位的第二标准电极电位 所述第二金属材料具有比所述第一标准电极电位高的第三标准电极电位。

公开(公告)号：US20100078763A1

公开(公告)日：2010-04-01

申请号：US12559446

申请日：2009-09-14

申请人： Keiji HOSOTANI ,  Yoshiaki ASAO ,  Kuniaki SUGIURA ,  Masatoshi YOSHIKAWA ,  Sumio IKEGAWA ,  Shigeki TAKAHASHI ,  Minoru AMANO

发明人： Keiji HOSOTANI ,  Yoshiaki ASAO ,  Kuniaki SUGIURA ,  Masatoshi YOSHIKAWA ,  Sumio IKEGAWA ,  Shigeki TAKAHASHI ,  Minoru AMANO

IPC分类号： H01L29/86 ,  H01L21/8239

CPC分类号： H01L43/08 ,  G11C11/161

摘要： A resistance-change memory includes an interlayer insulating film, a lower electrode layer, a fixed layer, a first insulating film, a recording layer, a second insulating film, a conducting layer and an interconnect. The interlayer insulating film is formed on a semiconductor substrate and has a step. The lower electrode layer is formed on the interlayer insulating film including the step. The fixed layer is formed on the lower electrode layer and has invariable magnetization. The first insulating film is formed on the fixed layer. The recording layer is formed on part of the first insulating film and has variable magnetization. The second insulating film is over the recording layer and in contact with the first insulating film. The conducting layer is formed on the second insulating film. The interconnect is connected to the conducting layer.

摘要翻译： 电阻变化存储器包括层间绝缘膜，下电极层，固定层，第一绝缘膜，记录层，第二绝缘膜，导电层和互连。 层间绝缘膜形成在半导体基板上并具有台阶。 包括该步骤的层间绝缘膜上形成下电极层。 固定层形成在下电极层上，具有不变的磁化。 第一绝缘膜形成在固定层上。 记录层形成在第一绝缘膜的一部分上并且具有可变的磁化强度。 第二绝缘膜在记录层上方并与第一绝缘膜接触。 导电层形成在第二绝缘膜上。 互连连接到导电层。

公开(公告)号：US20090244792A1

公开(公告)日：2009-10-01

申请号：US12396778

申请日：2009-03-03

申请人： Masahiko NAKAYAMA ,  Tadashi KAI ,  Sumio IKEGAWA ,  Hiroaki YODA ,  Tatsuya KISHI

发明人： Masahiko NAKAYAMA ,  Tadashi KAI ,  Sumio IKEGAWA ,  Hiroaki YODA ,  Tatsuya KISHI

IPC分类号： G11B5/33

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/226

摘要： A magnetoresistance effect element includes: a first ferromagnetic layer having invariable magnetization perpendicular to a film plane; a second ferromagnetic layer having variable magnetization perpendicular to the film plane; a first nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer; a third ferromagnetic layer provided on an opposite side of the second ferromagnetic layer from the first nonmagnetic layer, and having variable magnetization parallel to the film plane; and a second nonmagnetic layer interposed between the second and third ferromagnetic layers. Spin-polarized electrons are injected into the second ferromagnetic layer by flowing a current in the direction perpendicular to the film planes between the first and third ferromagnetic layers, precession movement is induced in the magnetization of the third ferromagnetic layer by injecting the spin-polarized electrons, and a microwave magnetic field of a frequency corresponding to the precession movement is applied to the second ferromagnetic layer.

摘要翻译： 磁阻效应元件包括：具有垂直于膜平面的不变磁化的第一铁磁层; 具有垂直于膜平面的可变磁化的第二铁磁层; 介于所述第一铁磁层和所述第二铁磁层之间的第一非磁性层; 第三铁磁层，其设置在所述第二铁磁层的与所述第一非磁性层相反的一侧上，并且具有与所述膜平面平行的可变磁化强度; 以及插入在第二和第三铁磁层之间的第二非磁性层。 通过在垂直于第一和第三铁磁层之间的膜平面的方向上流动电流，将旋转极化电子注入到第二铁磁层中，通过注入自旋极化电子在第三铁磁层的磁化中引起进动运动 并且将对应于进动运动的频率的微波磁场施加到第二铁磁层。

公开(公告)号：US20090225587A1

公开(公告)日：2009-09-10

申请号：US12470786

申请日：2009-05-22

申请人： Makoto Nagamine ,  Toshihiko Nagase ,  Sumio Ikegawa ,  Katsuya Nishiyama ,  Masatoshi Yoshikawa

发明人： Makoto Nagamine ,  Toshihiko Nagase ,  Sumio Ikegawa ,  Katsuya Nishiyama ,  Masatoshi Yoshikawa

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/224 ,  H01L27/228

摘要： A magnetoresistive element includes a first magnetic layer which includes a first surface and a second surface and has a first standard electrode potential, a second magnetic layer, a barrier layer which is provided between the second magnetic layer and the first surface of the first magnetic layer, and a nonmagnetic cap layer which contacts the second surface of the first magnetic layer and is formed from an alloy of a first metal material and a second metal material, the first metal material having a second standard electrode potential lower than the first standard electrode potential, the second metal material having a third standard electrode potential higher than the first standard electrode potential.

摘要翻译： 磁阻元件包括第一磁性层，其包括第一表面和第二表面，并且具有第一标准电极电位，第二磁性层，设置在第二磁性层和第一磁性层的第一表面之间的阻挡层 以及非磁性覆盖层，其与所述第一磁性层的第二表面接触并且由第一金属材料和第二金属材料的合金形成，所述第一金属材料具有低于所述第一标准电极电位的第二标准电极电位 所述第二金属材料具有比所述第一标准电极电位高的第三标准电极电位。

公开(公告)号：US07518906B2

公开(公告)日：2009-04-14

申请号：US11378351

申请日：2006-03-20

申请人： Sumio Ikegawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Eiji Kitagawa ,  Hiroaki Yoda

发明人： Sumio Ikegawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Eiji Kitagawa ,  Hiroaki Yoda

IPC分类号： G11C11/00

CPC分类号： G11C11/1657 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： A magneto-resistive element according to an aspect of the present invention includes a free layer whose magnetized state changes and a pinned layer whose magnetized state is fixed. The free layer comprises first and second ferromagnetic layers and a non-magnetic layer which is arranged between the first and second ferromagnetic layers. An intensity of exchange coupling between the first and second ferromagnetic layers is set so that an astroid curve in a hard axis direction opens.

摘要翻译： 根据本发明的一个方面的磁阻元件包括磁化状态改变的自由层和固定磁化状态的固定层。 自由层包括第一和第二铁磁层和布置在第一和第二铁磁层之间的非磁性层。 第一和第二铁磁层之间的交换耦合强度被设定为使得硬轴方向上的星形曲线打开。