公开(公告)号：US20110182971A1

公开(公告)日：2011-07-28

申请号：US12844538

申请日：2010-07-27

申请人： Dong Il Lee ,  Mun Seok Han ,  Tae Wan Lee ,  Jong Kyoo Lee ,  Han Ki Kim

发明人： Dong Il Lee ,  Mun Seok Han ,  Tae Wan Lee ,  Jong Kyoo Lee ,  Han Ki Kim

IPC分类号： A61F13/02 ,  A61K31/135

CPC分类号： A61K9/7084 ,  A61K31/137 ,  A61K47/14

摘要： Disclosed is a pharmaceutical composition containing tulobuterol. More specifically, disclosed is a transepidermal drug delivery system including a drug layer containing tulobuterol and a natural rubber-based adhesive material, and a supporter adhered to one surface of the drug layer to support the drug layer, wherein the natural rubber-based adhesive material comprises 10 to 40 parts by weight of a natural rubber, 54.5 to 85 parts by weight of a rosin ester resin and an acid value controller, and the drug layer has a thickness of 25 μm to 75 μm.

摘要翻译： 公开了含有杜洛特罗的药物组合物。 更具体地，公开了一种经表皮药物递送系统，其包括含有杜洛特罗和天然橡胶基粘合剂材料的药物层，以及附着在药物层的一个表面以支撑药物层的支持物，其中天然橡胶基粘合剂材料 包含10〜40重量份的天然橡胶，54.5〜85重量份的松香酯树脂和酸值控制剂，所述药物层的厚度为25μm〜75μm。

公开(公告)号：US20050056223A1

公开(公告)日：2005-03-17

申请号：US10970172

申请日：2004-10-21

申请人： Tae-Wan Lee ,  Kyu-Jin Choi ,  Yong-Ho Lee

发明人： Tae-Wan Lee ,  Kyu-Jin Choi ,  Yong-Ho Lee

IPC分类号： H01L21/205 ,  C23C16/44 ,  C23C16/46 ,  C23C16/00

CPC分类号： C23C16/46 ,  C23C16/4404 ,  C23C16/4405

摘要： A cold wall chemical vapor deposition apparatus includes: a chamber; a susceptor movable up and down in the chamber by a driving means, the susceptor including a heater and an internal electrode; a heat reflector over the susceptor, the heat reflector reflecting a heat emitted from the heater back to a wafer on the susceptor and serving as an correspondent electrode to the internal electrode; a heater control unit connected to the wafer, the heater and the driving means, the heater control unit sensing a temperature of the wafer, the susceptor moving according to the temperature; a gas supply unit supplying gases to the chamber; and a power source applying a voltage to the chamber.

摘要翻译： 冷壁化学气相沉积设备包括：室; 感受器通过驱动装置在所述腔室中上下移动，所述基座包括加热器和内部电极; 在所述基座上的热反射器，所述热反射器将从所述加热器发射的热反射回所述基座上的晶片，并且用作与所述内部电极相对应的电极; 连接到晶片的加热器控制单元，加热器和驱动装置，加热器控制单元感测晶片的温度，基座根据温度移动; 气体供应单元，其向所述室提供气体; 以及向腔室施加电压的电源。

公开(公告)号：US20120129321A1

公开(公告)日：2012-05-24

申请号：US13361907

申请日：2012-01-30

申请人： Cheol Hoon YANG ,  Kyu Jin CHOI ,  Yong Han JEON ,  Euy Kyu LEE ,  Tae Wan LEE

发明人： Cheol Hoon YANG ,  Kyu Jin CHOI ,  Yong Han JEON ,  Euy Kyu LEE ,  Tae Wan LEE

IPC分类号： H01L21/20

CPC分类号： H01L21/67069 ,  C23C16/0245 ,  C23C16/507 ,  H01J37/32522 ,  H01L21/67098

摘要： A semiconductor device manufacturing apparatus includes a chamber including a reaction space, a substrate disposing unit configured to dispose a substrate within the chamber, a first heating unit configured to optically heat the reaction space and disposed under the chamber, a second heating unit configured to heat the reaction space through resistive heating and disposed over the chamber, and a plasma generating unit configured to generate plasma in the reaction space. Since the apparatus generates the plasma using the plasma generating unit disposed over the chamber, the deposition process based on heating and the etch process based on the plasma can be simultaneously performed in one single chamber.

摘要翻译： 一种半导体器件制造装置，包括：包括反应空间的腔室，被配置为在所述腔室内设置基板的基板设置单元，配置为对所述反应空间进行光学加热并设置在所述室下方的第一加热单元， 所述反应空间通过电阻加热并设置在所述室上，等离子体产生单元被配置为在所述反应空间中产生等离子体。 由于该装置使用设置在室上的等离子体产生单元来产生等离子体，所以基于加热的沉积工艺和基于等离子体的蚀刻工艺可以在一个单一的室中同时进行。

公开(公告)号：US20100059182A1

公开(公告)日：2010-03-11

申请号：US12550391

申请日：2009-08-30

申请人： Ho Chul LEE ,  Sun Hong Choi ,  Seung Ho Lee ,  Ji Hun Lee ,  Dong Kyu Lee ,  Tae Wan Lee

发明人： Ho Chul LEE ,  Sun Hong Choi ,  Seung Ho Lee ,  Ji Hun Lee ,  Dong Kyu Lee ,  Tae Wan Lee

IPC分类号： H01L21/465 ,  H05B6/10

CPC分类号： C23C16/46 ,  H01L21/67109

摘要： A substrate processing apparatus includes a chamber having a reaction space therein, a substrate seating member disposed in the reaction space of the chamber to seat a substrate thereon, an induction heating unit to heat the substrate seating member, and at least one altitude adjusting unit to selectively adjust the altitude of the induction heating unit at the outside of the chamber according to a temperature adjusting region of the substrate seating member. Therefore, it is possible to constantly control a temperature of the substrate seating member by adjusting the distance length between the substrate seating member and the induction heating unit at the outside of the chamber.

摘要翻译： 一种基板处理装置，包括：反应空间的室，设置在所述室的反应空间中以将基板安置在其上的基板安置部件;加热所述基板座部件的感应加热单元;以及至少一个高度调节单元， 根据基板座部件的温度调节区域选择性地调节室外的感应加热单元的高度。 因此，可以通过调节在室外的基板座构件和感应加热单元之间的距离长度来恒定地控制基板座部件的温度。

公开(公告)号：US20100006539A1

公开(公告)日：2010-01-14

申请号：US12259257

申请日：2008-10-27

申请人： Cheol Hoon YANG ,  Kyu Jin CHOI ,  Yong Han JEON ,  Euy Kyu LEE ,  Tae Wan LEE

发明人： Cheol Hoon YANG ,  Kyu Jin CHOI ,  Yong Han JEON ,  Euy Kyu LEE ,  Tae Wan LEE

IPC分类号： H01L21/3065 ,  C23C16/00

CPC分类号： H01L21/67069 ,  C23C16/0245 ,  C23C16/507 ,  H01J37/32522 ,  H01L21/67098

摘要： A semiconductor device manufacturing apparatus includes a chamber including a reaction space, a substrate disposing unit configured to dispose a substrate within the chamber, a first heating unit configured to optically heat the reaction space and disposed under the chamber, a second heating unit configured to heat the reaction space through resistive heating and disposed over the chamber, and a plasma generating unit configured to generate plasma in the reaction space. Since the apparatus generates the plasma using the plasma generating unit disposed over the chamber, the deposition process based on heating and the etch process based on the plasma can be simultaneously performed in one single chamber.

摘要翻译： 一种半导体器件制造装置，包括：包括反应空间的腔室，被配置为在所述腔室内设置基板的基板设置单元，配置为对所述反应空间进行光学加热并设置在所述室下方的第一加热单元， 所述反应空间通过电阻加热并设置在所述室上，等离子体产生单元被配置为在所述反应空间中产生等离子体。 由于该装置使用设置在室上的等离子体产生单元来产生等离子体，所以基于加热的沉积工艺和基于等离子体的蚀刻工艺可以在一个单一的室中同时进行。

公开(公告)号：US20120197221A1

公开(公告)日：2012-08-02

申请号：US13324858

申请日：2011-12-13

申请人： Myoung Hwa JANG ,  Dong Il Lee ,  Mun Seok Han ,  Tae Wan Lee ,  Jong Kyoo Lee ,  Han Ki Kim

发明人： Myoung Hwa JANG ,  Dong Il Lee ,  Mun Seok Han ,  Tae Wan Lee ,  Jong Kyoo Lee ,  Han Ki Kim

IPC分类号： A61K31/27 ,  A61M35/00 ,  A61P25/16 ,  A61K9/70 ,  A61P25/28

CPC分类号： A61K9/7076 ,  A61K31/27

摘要： Disclosed is a pharmaceutical composition containing rivastigmine. Specifically, disclosed is a transepidermal drug delivery system including a rivastigmine-containing drug layer and a supporter adhered to one surface of the drug layer to support the drug layer, wherein the drug layer contains 10 to 40 parts by weight of a rubber, 20 to 80 parts by weight of a rosin ester resin and 0.1 to 10 parts by weight of an acrylic adhesive and the drug layer has a thickness of 40 μm to 100 μm.

摘要翻译： 公开了含有利凡斯的明的药物组合物。 具体地，公开了一种经表皮药物递送系统，其包含含有联合维生素的药物层和附着在药物层的一个表面以支持药物层的支持体，其中药物层含有10〜40重量份的橡胶，20〜 80重量份的松香酯树脂和0.1〜10重量份的丙烯酸系粘合剂，药物层的厚度为40〜100μm。

公开(公告)号：US20100101730A1

公开(公告)日：2010-04-29

申请号：US12603582

申请日：2009-10-21

申请人： Kyu Jin CHOI ,  Sung Min NA ,  Euy Kyu LEE ,  Yong Han JEON ,  Cheol Hoon YANG ,  Tae Wan LEE ,  Uk HWANG ,  Sun Kee KIM

发明人： Kyu Jin CHOI ,  Sung Min NA ,  Euy Kyu LEE ,  Yong Han JEON ,  Cheol Hoon YANG ,  Tae Wan LEE ,  Uk HWANG ,  Sun Kee KIM

IPC分类号： H01L21/465 ,  H01L21/687 ,  B05C13/02

CPC分类号： H01L21/68792

摘要： A substrate processing apparatus, which is designed to prevent the wobbling of a rotational shaft rotating, is provided. The substrate includes a rotation shaft and a connecting member. A unit is disposed between the rotational shaft and the connecting member to make the rotational shaft and the connecting member close-contact each other or a unit is disposed under the rotational shaft to prevent the wobbling of the rotational shaft.

摘要翻译： 设置有用于防止旋转轴的摆动的基板处理装置。 基板包括旋转轴和连接构件。 单元设置在旋转轴和连接构件之间，以使旋转轴和连接构件彼此紧密接触，或者单元设置在旋转轴下方以防止旋转轴的摆动。

公开(公告)号：US06857388B2

公开(公告)日：2005-02-22

申请号：US10124252

申请日：2002-04-17

申请人： Tae-Wan Lee ,  Kyu-Jin Choi ,  Yong-Ho Lee

发明人： Tae-Wan Lee ,  Kyu-Jin Choi ,  Yong-Ho Lee

IPC分类号： H01L21/205 ,  C23C16/44 ,  C23C16/46 ,  C23C16/00 ,  H01L21/00

CPC分类号： C23C16/46 ,  C23C16/4404 ,  C23C16/4405

摘要： A cold wall chemical vapor deposition apparatus includes: a chamber; a susceptor movable up and down in the chamber by a driving means, the susceptor including a heater and an internal electrode; a heat reflector over the susceptor, the heat reflector reflecting a heat emitted from the heater back to a wafer on the susceptor and serving as an correspondent electrode to the internal electrode; a heater control unit connected to the wafer, the heater and the driving means, the heater control unit sensing a temperature of the wafer, the susceptor moving according to the temperature; a gas supply unit supplying gases to the chamber; and a power source applying a voltage to the chamber.

摘要翻译： 冷壁化学气相沉积设备包括：室; 感受器通过驱动装置在所述腔室中上下移动，所述基座包括加热器和内部电极; 在所述基座上的热反射器，所述热反射器将从所述加热器发射的热反射回所述基座上的晶片，并且用作与所述内部电极相对应的电极; 连接到晶片的加热器控制单元，加热器和驱动装置，加热器控制单元感测晶片的温度，基座根据温度移动; 气体供应单元，其向所述室提供气体; 以及向腔室施加电压的电源。