公开(公告)号：US09558888B2

公开(公告)日：2017-01-31

申请号：US14082798

申请日：2013-11-18

Applicant: Case Western Reserve University ,  The U.S.A. as Represented by the Secretary of the Navy

Inventor： Eric Baer ,  Anne Hiltner ,  James S. Shirk ,  Mason A. Wolak

IPC: H01G4/18 ,  B32B7/02 ,  B32B15/08 ,  B32B27/08 ,  H01G4/20 ,  B32B27/30 ,  B32B27/36 ,  B29C47/00 ,  B29C47/06 ,  B29L7/00 ,  B29L9/00 ,  B29L31/34

CPC classification number: H01G4/18 ,  B29C47/0019 ,  B29C47/0021 ,  B29C47/061 ,  B29C47/065 ,  B29K2995/0006 ,  B29L2007/008 ,  B29L2009/00 ,  B29L2031/34 ,  B29L2031/3406 ,  B29L2031/3468 ,  B32B7/02 ,  B32B15/08 ,  B32B27/08 ,  B32B27/308 ,  B32B27/365 ,  B32B2307/20 ,  B32B2307/202 ,  B32B2307/204 ,  B32B2307/518 ,  B32B2439/70 ,  B32B2457/00 ,  H01G4/20 ,  Y10T428/24942

Abstract: A multilayer polymer dielectric film includes a stack of coextruded, alternating first dielectric layers and second dielectric layers that receive electrical charge. The first dielectric layers include a first polymer material and the second dielectric layers include a second polymer material different from the first polymer material. The first polymer material has a permittivity greater than the second polymer material. The second polymer material has a breakdown strength greater than the first polymer material. Adjoining first dielectric layers and second dielectric layers define an interface between the layers that delocalizes electrical charge build-up in the layers. The stack has substantially the crystallographic symmetry before and during receiving electrical charge.

Abstract translation: 多层聚合物电介质膜包括共挤出交替的第一介电层和接收电荷的第二电介质层的叠层。 第一介电层包括第一聚合物材料，第二介电层包括不同于第一聚合物材料的第二聚合物材料。 第一聚合物材料的介电常数大于第二聚合物材料。 第二聚合物材料具有大于第一聚合物材料的击穿强度。 邻接的第一电介质层和第二电介质层限定了层之间的界面，使层中的电荷积聚成为局部。 堆叠在接收电荷之前和期间具有基本的晶体对称性。

公开(公告)号：US20140160623A1

公开(公告)日：2014-06-12

申请号：US14082798

申请日：2013-11-18

Applicant: The U.S.A. as Represented by the Secretary of the Navy ,  Case Western Reserve University

Inventor： Eric Baer ,  Anne Hiltner ,  James S. Shirk ,  Mason A. Wolak

IPC: H01G4/18 ,  H01G4/30 ,  B32B7/02

CPC classification number: H01G4/18 ,  B29C47/0019 ,  B29C47/0021 ,  B29C47/061 ,  B29C47/065 ,  B29K2995/0006 ,  B29L2007/008 ,  B29L2009/00 ,  B29L2031/34 ,  B29L2031/3406 ,  B29L2031/3468 ,  B32B7/02 ,  B32B15/08 ,  B32B27/08 ,  B32B27/308 ,  B32B27/365 ,  B32B2307/20 ,  B32B2307/202 ,  B32B2307/204 ,  B32B2307/518 ,  B32B2439/70 ,  B32B2457/00 ,  H01G4/20 ,  Y10T428/24942

Abstract: A multilayer polymer dielectric film includes a stack of coextruded, alternating first dielectric layers and second dielectric layers that receive electrical charge. The first dielectric layers include a first polymer material and the second dielectric layers include a second polymer material different from the first polymer material. The first polymer material has a permittivity greater than the second polymer material. The second polymer material has a breakdown strength greater than the first polymer material. Adjoining first dielectric layers and second dielectric layers define an interface between the layers that delocalizes electrical charge build-up in the layers. The stack has substantially the crystallographic symmetry before and during receiving electrical charge.

Abstract translation: 多层聚合物电介质膜包括共挤出交替的第一介电层和接收电荷的第二电介质层的叠层。 第一介电层包括第一聚合物材料，第二介电层包括不同于第一聚合物材料的第二聚合物材料。 第一聚合物材料的介电常数大于第二聚合物材料。 第二聚合物材料具有大于第一聚合物材料的击穿强度。 邻接的第一电介质层和第二电介质层限定了层之间的界面，使层中的电荷积聚成为局部。 堆叠在接收电荷之前和期间具有基本的晶体对称性。

公开(公告)号：US20170282474A1

公开(公告)日：2017-10-05

申请号：US15403838

申请日：2017-01-11

Applicant: CASE WESTERN RESERVE UNIVERSITY ,  THE U.S.A. AS REPRESENTED BY THE SECRETARY OF THE NAVY

Inventor： Eric Baer ,  Anne Hiltner ,  James S. Shirk ,  Mason A. Wolak

IPC: B29C47/00 ,  B32B15/08

CPC classification number: H01G4/18 ,  B29C47/0019 ,  B29C47/0021 ,  B29C47/061 ,  B29C47/065 ,  B29K2995/0006 ,  B29L2007/008 ,  B29L2009/00 ,  B29L2031/34 ,  B29L2031/3406 ,  B29L2031/3468 ,  B32B7/02 ,  B32B15/08 ,  B32B27/08 ,  B32B27/308 ,  B32B27/365 ,  B32B2307/20 ,  B32B2307/202 ,  B32B2307/204 ,  B32B2307/518 ,  B32B2439/70 ,  B32B2457/00 ,  H01G4/20 ,  Y10T428/24942

Abstract: A multilayer polymer dielectric film includes a stack of coextruded, alternating first dielectric layers and second dielectric layers that receive electrical charge. The first dielectric layers include a first polymer material and the second dielectric layers include a second polymer material different from the first polymer material. The first polymer material has a permittivity greater than the second polymer material. The second polymer material has a breakdown strength greater than the first polymer material. Adjoining first dielectric layers and second dielectric layers define an interface between the layers that delocalizes electrical charge build-up in the layers. The stack has substantially the crystallographic symmetry before and during receiving electrical charge.

公开(公告)号：US10732118B2

公开(公告)日：2020-08-04

申请号：US16597277

申请日：2019-10-09

Applicant: UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC. ,  THE U.S.A. AS REPRESENTED BY THE SECRETARY OF THE NAVY

Inventor： Chandraika Sugrim ,  Ranganathan Kumar ,  Aravinda Kar ,  Robert Burkhart

IPC: G01N21/76 ,  H01L27/146 ,  H01S5/00 ,  H01S5/026

Abstract: A detector is for identifying chemicals in a sample. The detector may include a photodetector comprising SiC semiconductor material and configured to have an acceptor energy band of range Ea−ΔEa to Ea+ΔEa. The SiC semiconductor material may be doped with a dopant to exceed a threshold dopant concentration level. The photodetector may be configured to receive fluorescence information from the sample.

公开(公告)号：US20170284976A1

公开(公告)日：2017-10-05

申请号：US15464378

申请日：2017-03-21

Applicant: The Govt. of the U.S.A., as represented by the Secretary of the Navy

Inventor： R. Andrew McGill ,  Robert Furstenberg ,  Viet K. Nguyen ,  Chris Kendziora ,  Michael Papantonakis ,  Todd H. Stievater

IPC: G01N30/02 ,  G01N30/60 ,  G01N21/77 ,  G01N21/552 ,  G01N21/3504 ,  G01N21/03 ,  B01J20/281 ,  G01N21/39

CPC classification number: G01N30/02 ,  G01N21/0332 ,  G01N21/3504 ,  G01N21/39 ,  G01N21/552 ,  G01N21/658 ,  G01N21/7746 ,  G01N30/48 ,  G01N30/6034 ,  G01N30/6082 ,  G01N30/74 ,  G01N2021/4761 ,  G01N2030/025

Abstract: A chemical detector for rapid, simultaneous detection of multiple chemicals including chemical warfare agents, toxic industrial chemicals, and explosives having one or more gas chromatography columns each with a chemosorbent or a chemo-reactive stationary phase and an infrared-transparent base, a bright infrared light source, a mechanism to direct the light source to any point along any of the columns, and an infrared sensor. Another disclosed detector has one or more gas chromatography columns each on the surface of a substrate having at least one infrared-transparent waveguide pattern, a bright infrared light source, and at least one ring resonator for each column, where each ring resonator is coated with a chemosorbent or a chemo-reactive stationary phase, and where each ring resonator spectroscopically probes the stationary phase. Also disclosed are the related methods for chemical detection.

公开(公告)号：US20200110034A1

公开(公告)日：2020-04-09

申请号：US16597277

申请日：2019-10-09

Applicant: UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC. ,  THE U.S.A. AS REPRESENTED BY THE SECRETARY OF THE NAVY

Inventor： Chandraika Sugrim ,  Ranganathan Kumar ,  Aravinda Kar ,  Robert Burkhart

IPC: G01N21/76 ,  H01L27/146 ,  H01S5/00 ,  H01S5/026

Abstract: A detector is for identifying chemicals in a sample. The detector may include a photodetector comprising SiC semiconductor material and configured to have an acceptor energy band of range Ea−ΔEa to Ea+ΔEa. The SiC semiconductor material may be doped with a dopant to exceed a threshold dopant concentration level. The photodetector may be configured to receive fluorescence information from the sample.