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公开(公告)号：US4377437A
公开(公告)日：1983-03-22
申请号：US266220
申请日：1981-05-22
IPC分类号： C03C23/00 , C04B41/53 , C23C14/48 , G03F7/20 , H01L21/311 , H01L21/3115 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： C04B41/5346 , C03C23/0055 , C03C23/006 , C23C14/48 , G03F7/2065 , H01L21/31116 , H01L21/31138 , H01L21/31155
摘要： A method is shown whereby implanted ions, for example indium or gallium ions, are used to selectively define a pattern on a material, typically a polymer. The implanted regions react with a plasma (for example, an oxygen plasma) to form a patterned, nonvolatile protective layer (e.g., indium oxide or gallium oxide) on the material. Subsequent etching, which can typically be accomplished by the same plasma, produces a negative tone pattern. Materials other than polymers can be utilized. For example, an indium implant in SiO.sub.2 allows direct pattern generation by exposure to a fluorine plasma, without the use of a separate polymeric resist.
摘要翻译： 示出了一种方法，其中使用注入的离子，例如铟或镓离子来选择性地限定材料（通常为聚合物）上的图案。 注入区域与等离子体（例如，氧等离子体）反应以在材料上形成图案化的非挥发性保护层（例如氧化铟或氧化镓）。 通常可以通过相同等离子体实现的后续蚀刻产生负色调图案。 可以使用聚合物以外的材料。 例如，SiO 2中的铟注入允许通过暴露于氟等离子体而直接产生图案，而不使用单独的聚合抗蚀剂。
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公开(公告)号：US4155779A
公开(公告)日：1979-05-22
申请号：US935665
申请日：1978-08-21
申请人： David H. Auston , Jene A. Golovchenko , Richart E. Slusher , Clifford M. Surko , Thirumalai N. C. Venkatesan
发明人： David H. Auston , Jene A. Golovchenko , Richart E. Slusher , Clifford M. Surko , Thirumalai N. C. Venkatesan
IPC分类号： H01L21/263 , H01L21/20 , H01L21/268 , H01L21/324 , H01L21/26
CPC分类号： H01L21/268 , H01L21/2022 , Y10S148/09 , Y10S148/093 , Y10S438/965
摘要： Polycrystalline and amorphous semiconductors can be annealed using a laser or electron beam to restore or obtain crystal order by epitaxial regrowth on a crystal substrate. When the annealing occurs by liquid phase epitaxy, the presence and lifetime of a molten state at the region being annealed can be used to control the annealing process. Various control mechanisms are described.
摘要翻译： {PG，1多晶和非晶半导体可以使用激光或电子束进行退火，以通过晶体衬底上的外延再生长恢复或获得晶体顺序。 当通过液相外延进行退火时，可以使用在退火区域的熔融状态的存在和寿命来控制退火过程。 描述各种控制机制。
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公开(公告)号：US4253728A
公开(公告)日：1981-03-03
申请号：US060013
申请日：1979-07-23
CPC分类号： G02F1/3137 , G02F1/218 , G02F2001/213
摘要： Multimode switching is obtained in a four-port device having controllable switching means (22) comprising a thin Fabry-Perot interferometer including, within the cavity, a voltage controllable absorber (35). By the appropriate dimensioning of the cavity and orientation of the incident radiation, multimode operation is obtained.
摘要翻译： 在具有可控开关装置（22）的四端口装置中获得多模开关，该开关装置（22）包括薄法布里 - 珀罗干涉仪，该干涉仪在空腔内包括电压可控吸收器（35）。 通过适当的腔体尺寸和入射辐射的取向，获得多模操作。
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公开(公告)号：US5215867A
公开(公告)日：1993-06-01
申请号：US54147
申请日：1987-05-15
摘要： A resist is formed by sorption of an inorganic-containing gas into an organic material. The development of the resist occurs by exposure to a plasma (e.g., oxygen reactive ion etching) that forms a protective compound (e.g., a metal oxide) selectively in the resist. The selected regions can be defined by patterning radiation of various types, including visible, ultraviolet, electron beam, and ion beam. In an alternate embodiment, the selected regions are defined by an overlying resist, with the gas sorption protecting the underlying layer in a bilevel resist. The protective compound can protect the organic resist layer during etching of an underlying inorganic layer, such as metal, silicide, oxide, nitride, etc.
摘要翻译： 通过将含无机物的气体吸附到有机材料中形成抗蚀剂。 通过暴露于在抗蚀剂中选择性形成保护化合物（例如，金属氧化物）的等离子体（例如，氧反应离子蚀刻），发生抗蚀剂的发展。 所选择的区域可以通过图案化的各种类型的辐射来限定，包括可见光，紫外线，电子束和离子束。 在替代实施例中，所选择的区域由覆盖的抗蚀剂限定，气体吸附保护双层抗蚀剂中的下层。 保护性化合物可以在蚀刻下面的无机层（例如金属，硅化物，氧化物，氮化物等）时保护有机抗蚀剂层。
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公开(公告)号：US4511445A
公开(公告)日：1985-04-16
申请号：US389776
申请日：1982-06-18
IPC分类号： H01B1/04 , H01L21/28 , H01L21/3205 , H01L23/52 , H01L23/532 , H05K3/10 , B01J19/08 , H01L29/28
CPC分类号： H01L23/532 , H01L21/32051 , H05K3/105 , H01L2924/0002 , Y10T428/31504 , Y10T428/31649
摘要： The conductivity of a wide range of carbon-containing materials is substantially increased by irradiation with particles having an atomic mass of at least 1. Both polymeric and nonpolymeric, organic and inorganic, materials can be used. The particulate irradiation, for example an ion beam, substantially breaks down the material to a form that includes amorphous carbon having unusually high conductivity. Resistivities of less than 10.sup.-3 ohm-cm are possible. When applied as a film on a substrate, the irradiated material can be used for device interconnects. Conducting lines can be produced in the film, as well as vertical contacts through the film.
摘要翻译： 通过用原子质量至少为1的颗粒进行照射，可大大增加各种含碳材料的电导率。可以使用聚合物和非聚合物，有机和无机材料。 颗粒物照射，例如离子束，基本上将材料分解成包括非常高导电性的无定形碳的形式。 小于10-3欧姆 - 厘米的电阻率是可能的。 当作为薄膜涂覆在基材上时，照射的材料可用于器件互连。 可以在膜中产生导线，以及通过膜的垂直接触。
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公开(公告)号：US4234356A
公开(公告)日：1980-11-18
申请号：US44663
申请日：1979-06-01
IPC分类号： H01L21/268 , H01L21/263
CPC分类号： H01L21/268 , Y10S117/904 , Y10S148/003 , Y10S148/09 , Y10S148/092 , Y10S148/093
摘要： A new mode of optical annealing is disclosed wherein two different wavelength pulses are used to anneal a damaged semiconductor substrate. The first pulse may be of relatively weak intensity, but is strongly absorbed by the solid substrate. The second pulse, which is not strongly absorbed by the solid substrate when in the solid phase, is strongly absorbed by the substrate when in the molten phase. Exposure to the first pulse results in the melting of the substrate, which then becomes highly absorptive to light at the wavelength of the second pulse. Readily available laser sources which are generally not highly absorbed by the semiconductor in the solid phase may thus be efficiently utilized.
摘要翻译： 公开了一种新的光学退火模式，其中使用两种不同的波长脉冲对损坏的半导体衬底进行退火。 第一脉冲的强度可能相对较弱，但被固体基质强烈地吸收。 当处于固相时，不被固体基质强烈吸收的第二脉冲在熔融相中被基底强烈地吸收。 暴露于第一脉冲导致衬底的熔化，其然后在第二脉冲的波长处变得对于高的吸收性。 因此，可以有效地利用通常不被固相中的半导体高度吸收的易于获得的激光源。
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公开(公告)号：US4518934A
公开(公告)日：1985-05-21
申请号：US348869
申请日：1982-02-16
CPC分类号： G02F3/024 , G02F1/025 , G02F1/218 , G02F2001/0157
摘要： An optically integrated bistable device includes a semiconductor junction Fabry-Perot interferometer cavity and a pair of electrodes for applying a reverse-bias voltage to the junction to increase its light absorption. A capacitor is connected between one electrode and ground for eliminating spurious high-speed signals. A resistor is connected in series with the voltage source between the electrodes to decrease the back-bias in response to photocurrent for a negative feedback.
摘要翻译： 光学一体化的双稳态器件包括半导体接合法布里 - 珀罗干涉仪腔和一对用于向接点施加反向偏置电压以增加其光吸收的电极。 电容器连接在一个电极和地之间，以消除杂散的高速信号。 电阻器与电极之间的电压源串联连接，以响应于负反馈的光电流而减小反偏压。
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8.发明授权Annealing of uncapped compound semiconductor materials by pulsed energy deposition 失效通过脉冲能量沉积退火未化合的半导体材料
公开(公告)号：US4154625A
公开(公告)日：1979-05-15
申请号：US851846
申请日：1977-11-16
IPC分类号： H01L21/265 , H01L21/268 , H01L21/26
CPC分类号： H01L21/268 , H01L21/26546 , Y10S117/904 , Y10S117/905
摘要： Damaged semiconductor materials are annealed using localized short term energy deposition. In a specific embodiment gallium arsenide damaged during ion implantation is annealed by exposure to short laser pulses.
摘要翻译： 损坏的半导体材料使用局部短期能量沉积进行退火。 在具体实施方案中，通过暴露于短激光脉冲对离子注入期间损坏的砷化镓进行退火。
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