公开(公告)号：US4693843A

公开(公告)日：1987-09-15

申请号：US838250

申请日：1986-03-10

申请人： Toru Kasanami ,  Hiroji Tani ,  Shizuharu Watanabe ,  Toshiaki Ikeda

发明人： Toru Kasanami ,  Hiroji Tani ,  Shizuharu Watanabe ,  Toshiaki Ikeda

IPC分类号： H01C7/00 ,  H01C10/30 ,  H01C17/065 ,  H01B1/06

CPC分类号： H01C17/06533 ,  H01C17/0654

摘要： Resistance paste for baked-film resistors consists essentially of conducting powder, glass frit and organic varnish. The conducting powder consists essentially of iron oxide, ruthenium oxide and lead oxide, the molar ratio of the three components of the conducting powder being 1:0.6-3:0.2-1 when expressed in terms of Fe.sub.3 O.sub.4, RuO.sub.2 and Pb.sub.3 O.sub.4, respectively.

摘要翻译： 烘烤膜电阻用电阻膏主要由导电粉末，玻璃料和有机清漆组成。 导电粉末主要由氧化铁，氧化钌和氧化铅组成，当以Fe3O4，RuO2和Pb3O4表示时，导电粉末的三种组分的摩尔比分别为1：0.6-3：0.2-1。

公开(公告)号：US4890370A

公开(公告)日：1990-01-02

申请号：US255054

申请日：1988-10-07

申请人： Susumu Fukuda ,  Hisashi Ariyoshi ,  Toru Kasanami

发明人： Susumu Fukuda ,  Hisashi Ariyoshi ,  Toru Kasanami

IPC分类号： H01L41/08 ,  H03H3/02 ,  H03H9/05 ,  H03H9/17

CPC分类号： H03H9/173 ,  H03H3/02 ,  H03H2003/021 ,  Y10T29/42

摘要： A manufacturing method for an integrated resonator is disclosed wherein a mass of O.sup.+ ions are implanted into a silicon monocrystal substrate from one side thereof, a buried SiO.sub.2 layer is formed by annealing the ion implanted substrate, an SiO.sub.2 layer is formed on the surface of the substrate by oxidizing it, at least one slit is formed on the SiO.sub.2 layer for etching a predetermined area of the silicon monocrystal layer sandwich between two SiO.sub.2 layers to form a cavity and, a piezo-electric resonator is formed on an area of the surfacial SiO.sub.2 layer corresponding to the cavity in the substrate.

摘要翻译： 公开了一种用于集成谐振器的制造方法，其中O +离子的质​​量从其一侧注入硅单晶衬底中，通过对离子注入衬底进行退火而形成掩埋的SiO 2层，在该表面上形成SiO 2层 在SiO 2层上形成至少一个狭缝，用于蚀刻在两个SiO 2层之间夹层的硅单晶层的预定区域以形成空腔，并且在表面SiO 2的区域上形成压电谐振器 层对应于衬底中的空腔。

公开(公告)号：US4464422A

公开(公告)日：1984-08-07

申请号：US440302

申请日：1982-11-09

申请人： Atsuo Senda ,  Suehiro Kato ,  Toru Kasanami

发明人： Atsuo Senda ,  Suehiro Kato ,  Toru Kasanami

IPC分类号： B23K35/22 ,  B05D5/12

CPC分类号： B23K35/226

摘要： A process for preventing the oxidation of a copper film formed on a ceramic body, which comprises the steps of forming a copper film on a ceramic body by a dry-plating process, treating the resultant copper film with a deactivating agent comprising at least one volatile hydrocarbon halide monomer by feeding the same into a vacuum chamber of a dry-plating apparatus.

摘要翻译： 一种防止形成在陶瓷体上的铜膜的氧化的方法，包括以下步骤：通过干法电镀工艺在陶瓷体上形成铜膜，用包含至少一种挥发性 烃卤化物单体通过将其送入干式电镀设备的真空室中。

公开(公告)号：US4845044A

公开(公告)日：1989-07-04

申请号：US239337

申请日：1988-07-28

申请人： Hisashi Ariyoshi ,  Toru Kasanami ,  Susumu Fukuda

发明人： Hisashi Ariyoshi ,  Toru Kasanami ,  Susumu Fukuda

IPC分类号： H01L21/322 ,  H01L21/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/265 ,  H01L27/12

CPC分类号： H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02546 ,  H01L21/02551 ,  H01L21/02658 ,  Y10S438/933

摘要： A production method for producing a semiconductor device by growing a crystalline compound semiconductor on a monocrystalline silicon substrate is comprised of a step for forming a transition domain varying from a monocrystalline silicon layer to a polycrystalline silicon layer in the silicon substrate by implanting oxygen ions into the silicon substrate and annealing the silicon substrate and a step for depositing a compound semiconductor layer on the silicon substrate.

摘要翻译： 通过在单晶硅衬底上生长晶体化合物半导体来制造半导体器件的生产方法包括通过将氧离子注入到硅衬底中形成从单晶硅层到硅衬底中的多晶硅层的转变区域的步骤 硅衬底并退火硅衬底以及在硅衬底上沉积化合物半导体层的步骤。

公开(公告)号：US5369862A

公开(公告)日：1994-12-06

申请号：US809047

申请日：1991-12-16

申请人： Kenichi Kotani ,  Mikio Nakajima ,  Yukio Yoshino ,  Toru Kasanami ,  Akio Ikeda

发明人： Kenichi Kotani ,  Mikio Nakajima ,  Yukio Yoshino ,  Toru Kasanami ,  Akio Ikeda

IPC分类号： H03H3/04 ,  H03H9/10 ,  H04R17/00

CPC分类号： H03H9/1035 ,  H03H3/04 ,  H03H9/1014 ,  H03H9/177 ,  H04R17/00 ,  H03H2003/0414 ,  Y10T29/42 ,  Y10T29/435

摘要： A piezoelectric device is essentially composed of a piezoelectric transducer and a light transmitting protector. The protector is made of heat resisting glass, heat resisting acrylic, transparent ceramics or the like. By exposing the piezoelectric device to a laser beam and thereby causing it to penetrate through the protector to the piezoelectric transducer and to partly cut the surface of the piezoelectric transducer, or to change the intensity of polarization, mechanical coupling coefficient or dielectric constant of the piezoelectric transducer, its vibration frequency and resonance characteristic can be adjusted. If an ultraviolet-ray setting agent is used as adhesive, it can be hardened by exposing the piezoelectric device to ultraviolet rays to thereby cause it penetrate through the protector.

摘要翻译： 压电装置主要由压电换能器和透光保护器组成。 保护器由耐热玻璃，耐热亚克力，透明陶瓷等制成。 通过将压电器件暴露于激光束，从而使其穿过保护器到压电换能器并部分地切割压电换能器的表面，或者改变压电强度，压电强度，机械耦合系数或介电常数 传感器，其振动频率和谐振特性可以调整。 如果使用紫外线固化剂作为粘合剂，则可以通过将压电装置暴露于紫外线而使其透过保护膜而硬化。