Abstract:
An inspection method includes photographing a measurement target to acquire image data for each pixel of the measurement target, acquiring height data for each pixel of the measurement target, acquiring visibility data for each pixel of the measurement target, multiplying the acquired image data by at least one of the height data and the visibility data for each pixel to produce a result value, and setting a terminal area by using the produced result value. Thus, the terminal area may be accurately determined.
Abstract:
An etchant according to exemplary embodiments of the present invention includes about 0.5 wt % to about 20 wt % of persulfate, about 0.01 wt % to about 2 wt % of a fluorine compound, about 1 wt % to about 10 wt % of inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 5 wt % of a chlorine compound, about 0.05 wt % to about 3 wt % of copper salt, about 0.1 wt % to about 10 wt % of organic acid or organic acid salt, and water.
Abstract:
An apparatus and method transmit video data in a video device. The apparatus includes a controller and an encoding unit. The controller is configured to control the encoding unit, divide a video data input screen into a plurality of regions, and transmit encoded data on the divided videos to a remote system. The encoding unit is configured to encode the divided videos into video data.
Abstract:
A resistive memory device includes a plurality of resistive units, each resistive unit including: a lower electrode formed over a substrate; a resistive layer formed over the lower electrode; and an upper electrode formed over the resistive layer, wherein edge parts of the lower and upper electrodes, which come in contact with the resistive layer, is formed with a rounding shape.
Abstract:
A resistance changing device includes a resistive layer of a hetero structure interposed between a lower electrode and an upper electrode, and including a plurality of resistive material layers, each having a different resistivity, stacked therein, wherein resistivities of the resistive material layers decrease from the lower electrode toward the upper electrode. Since the resistive layer has a hetero structure in which a plurality of resistive material layers, each having a different resistivity, are stacked in such a manner that the resistivity decreases as it goes from the lower electrode to the upper electrode, it is possible to improve the distributions of the set/reset voltage and the set/reset current, while reducing a reset current of a resistance changing device at the same time.
Abstract:
An inspection method for inspecting a device mounted on a substrate, includes generating a shape template of the device, acquiring height information of each pixel by projecting grating pattern light onto the substrate through a projecting section, generating a contrast map corresponding to the height information of each pixel, and comparing the contrast map with the shape template. Thus, a measurement object may be exactly extracted.
Abstract:
The present invention provides an etchant composition comprising A) high strength potassium monopersulfate providing from about 0.025% to about 0.8% by weight of active oxygen; B) from about 0.01% to about 30% by weight of the composition of B1) an organic acid, alkali metal salt of an organic acid, ammonium salt of an organic acid, or a homopolymer of an organic acid, or B2) a halogen or nitrate salt of phosphonium, tetrazolium, or benzolium, or B3) a mixture of component B1) and B2); and C) from about 0% to about 97.49% by weight of the composition of water; and a method of etching a substrate using said composition.
Abstract:
A resistive memory device and a method for manufacturing the same are disclosed. The resistive memory device includes a lower electrode formed over a substrate, a resistive layer disposed over the lower electrode, an upper electrode formed over the resistive layer, and an oxygen-diffusion barrier pattern provided in an interface between the resistive layer and the upper electrode. The above-described resistive memory device and a method for manufacturing the same may prevent the out diffusion of oxygen in the interface of the upper electrode to avoid set-stuck phenomenon occurring upon the operation of the resistive memory device, thereby improving the endurance of the resistive memory device.
Abstract:
A method for fabricating a semiconductor device is provided. In the method, a bulb type recess is formed on a semiconductor substrate in an active region. A gate insulating film is formed over the semiconductor substrate and on a surface of the recess. A first polysilicon layer is formed over the gate insulating film. A silicon-on-dielectric (“SOD”) barrier film is formed on the first polysilicon layer at a lower part of the recess. A second polysilicon layer is formed over the semiconductor substrate and filling the recess. Impurity ions are injected into the second polysilicon layer. An annealing process is performed on the semiconductor substrate. A metal layer and a gate hard mask layer is formed and patterned over the second polysilicon layer to form a gate including the SOD barrier film.
Abstract:
An etchant according to exemplary embodiments of the present invention includes about 0.5 wt % to about 20 wt % of persulfate, about 0.01 wt % to about 2 wt % of a fluorine compound, about 1 wt % to about 10 wt % of inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 5 wt % of a chlorine compound, about 0.05 wt % to about 3 wt % of copper salt, about 0.1 wt % to about 10 wt % of organic acid or organic acid salt, and water.