公开(公告)号：US10461157B2

公开(公告)日：2019-10-29

申请号：US15918581

申请日：2018-03-12

Applicant: ABB Schweiz AG

Inventor： Martin Arnold ,  Umamaheswara Vemulapati

IPC: H01L29/74 ,  H01L29/10 ,  H01L29/36 ,  H01L29/744 ,  H01L29/08 ,  H01L29/06 ,  H01L29/417 ,  H01L29/66 ,  H01L29/745

Abstract: The invention relates to a turn-off power semiconductor device comprising a plurality of thyristor cells, each thyristor cell comprising a cathode region; a base layer; a drift layer; an anode layer; a gate electrode which is arranged lateral to the cathode region in contact with the base layer; a cathode electrode; and an anode electrode. Interfaces between the cathode regions and the cathode electrodes as well as interfaces between the base layers and the gate electrodes of the plurality of thyristor cells are flat and coplanar. In addition, the base layer includes a gate well region extending from its contact with the gate electrode to a depth, which is at least half of the depth of the cathode region, wherein, for any depth, the minimum doping concentration of the gate well region at this depth is 50% above a doping concentration of the base layer between the cathode region and the gate well region at this depth and at a lateral position, which has in an orthogonal projection onto a plane parallel to the first main side a distance of 2 μm from the cathode region. The base layer includes a compensated region of the second conductivity type, the compensated region being arranged directly adjacent to the first main side and between the cathode region and the gate well region, wherein the density of first conductivity type impurities relative to the net doping concentration in the compensated region is at least 0.4.

公开(公告)号：US20180204913A1

公开(公告)日：2018-07-19

申请号：US15918581

申请日：2018-03-12

Applicant: ABB Schweiz AG

Inventor： Martin Arnold ,  Umamaheswara Vemulapati

IPC: H01L29/10 ,  H01L29/745 ,  H01L29/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/66

CPC classification number: H01L29/1066 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0839 ,  H01L29/102 ,  H01L29/36 ,  H01L29/41716 ,  H01L29/66363 ,  H01L29/66393 ,  H01L29/744 ,  H01L29/745

Abstract: The invention relates to a turn-off power semiconductor device comprising a plurality of thyristor cells, each thyristor cell comprising a cathode region; a base layer; a drift layer; an anode layer; a gate electrode which is arranged lateral to the cathode region in contact with the base layer; a cathode electrode; and an anode electrode. Interfaces between the cathode regions and the cathode electrodes as well as interfaces between the base layers and the gate electrodes of the plurality of thyristor cells are flat and coplanar. In addition, the base layer includes a gate well region extending from its contact with the gate electrode to a depth, which is at least half of the depth of the cathode region, wherein, for any depth, the minimum doping concentration of the gate well region at this depth is 50% above a doping concentration of the base layer between the cathode region and the gate well region at this depth and at a lateral position, which has in an orthogonal projection onto a plane parallel to the first main side a distance of 2 μm from the cathode region. The base layer includes a compensated region of the second conductivity type, the compensated region being arranged directly adjacent to the first main side and between the cathode region and the gate well region, wherein the density of first conductivity type impurities relative to the net doping concentration in the compensated region is at least 0.4.

公开(公告)号：US10026732B2

公开(公告)日：2018-07-17

申请号：US15626777

申请日：2017-06-19

Applicant: ABB Schweiz AG

Inventor： Munaf Rahimo ,  Martin Arnold ,  Umamaheswara Vemulapati

IPC: H01L29/747 ,  H01L27/08 ,  H01L29/74 ,  H01L29/06

Abstract: A bidirectional power semiconductor device with full turn-off control in both current directions and improved electrical and thermal properties is provided, the device comprises a plurality of first gate commutated thyristor (GCT) cells and a plurality of second GCT cells alternating with each other, a first base layer of each first GCT cell is separated from a neighbouring second anode layer of a neighbouring second GCT cell by a first separation region, and a second base layer of each second GCT cell is separated from a neighbouring first anode layer of a neighbouring first GCT cell by a second separation region.

公开(公告)号：US20170294435A1

公开(公告)日：2017-10-12

申请号：US15626777

申请日：2017-06-19

Applicant: ABB Schweiz AG

Inventor： Munaf Rahimo ,  Martin Arnold ,  Umamaheswara Vemulapati

IPC: H01L27/08 ,  H01L29/747 ,  H01L29/74

CPC classification number: H01L27/0817 ,  H01L27/0207 ,  H01L27/0694 ,  H01L29/0692 ,  H01L29/7404 ,  H01L29/747

Abstract: A bidirectional power semiconductor device with full turn-off control in both current directions and improved electrical and thermal properties is provided, the device comprises a plurality of first gate commutated thyristor (GCT) cells and a plurality of second GCT cells alternating with each other, a first base layer of each first GCT cell is separated from a neighbouring second anode layer of a neighbouring second GCT cell by a first separation region, and a second base layer of each second GCT cell is separated from a neighbouring first anode layer of a neighbouring first GCT cell by a second separation region.