公开(公告)号：US20240395514A1

公开(公告)日：2024-11-28

申请号：US18202335

申请日：2023-05-26

Applicant: Applied Materials, Inc.

Inventor： Prashant AGARWAL ,  Junqi WEI ,  Ananthkrishna JUPUDI ,  Clinton GOH ,  Tuck Foong KOH ,  Kai Liang LIEW

IPC: H01J37/32 ,  C23C14/02 ,  C23C14/34 ,  C23C14/54 ,  C23C14/56 ,  C23C14/58 ,  H01L21/324 ,  H01L21/67 ,  H05B6/80

Abstract: Embodiments of multi-chamber processing tools are provided herein. In some embodiments, a multi-chamber processing tool includes: a factory interface configured to receive a substrate; a pre-heat chamber directly coupled to the factory interface; a load lock chamber coupled to the factory interface and having a first slit valve disposed therebetween, wherein the load lock chamber is coupled to a pump configured to create a vacuum environment when the first slit valve is in a closed position; a degas chamber coupled to the factory interface and having a second slit valve, wherein the degas chamber is coupled to a second pump configured to create a vacuum environment when the second slit valve is in a closed position, and wherein the degas chamber includes a heat source; one or more process chambers; and a transfer chamber coupled to the load lock chamber, the degas chamber, and the one or more process chambers.

公开(公告)号：US20210233802A1

公开(公告)日：2021-07-29

申请号：US17227354

申请日：2021-04-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Felix DENG ,  Yueh Sheng OW ,  Tuck Foong KOH ,  Nuno Yen-Chu CHEN ,  Yuichi WADA ,  Sree Rangasai V. KESAPRAGADA ,  Clinton GOH

IPC: H01L21/762 ,  H01L21/67

Abstract: Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.

公开(公告)号：US20210001520A1

公开(公告)日：2021-01-07

申请号：US16919736

申请日：2020-07-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Tuck Foong KOH ,  Chien-Kang HSIUNG ,  Yueh Sheng OW ,  Felix DENG ,  Yue CUI ,  Nuno Yen-Chu CHEN ,  Ananthkrishna JUPUDI ,  Clinton GOH ,  Vinodh RAMACHANDRAN

IPC: B29C35/08 ,  H05B6/80 ,  H05B6/70 ,  H05B6/68

Abstract: Methods and apparatus for curing a substrate or polymer using variable microwave frequency are provided herein. In some embodiments, a method of curing a substrate or polymer using variable microwave frequency includes: contacting a substrate or polymer with a plurality of predetermined discontinuous microwave energy bandwidths or a plurality of predetermined discontinuous microwave energy frequencies to cure the substrate or polymer.

公开(公告)号：US20240266220A1

公开(公告)日：2024-08-08

申请号：US18105390

申请日：2023-02-03

Applicant: Applied Materials, Inc.

Inventor： Jonathan Bryant MELLEN ,  Clinton GOH ,  Cheng SUN

IPC: H01L21/78 ,  B23K26/38 ,  B23K26/40 ,  H01J37/32 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/67 ,  H01L23/544

CPC classification number: H01L21/78 ,  B23K26/38 ,  B23K26/40 ,  H01J37/32743 ,  H01J37/32899 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/67167 ,  H01L21/67207 ,  H01L23/544 ,  H01J2237/022 ,  H01J2237/334 ,  H01L2223/5446

Abstract: A method for dicing a die from a substrate for bonding that leverages laser and multiple etch processes. The method may include performing a laser cutting process to form a cut that removes a first portion of a dicing street in the substrate, performing a first plasma etch process to increase the laser kerf width to a first plasma etch width that is less than a dicing street width and to remove any non-silicon material from a bottom of the cut, and performing a second plasma etch process to increase the first plasma etch width to the dicing street width and to remove any remaining portion of the dicing street to completely separate the die from the substrate.

公开(公告)号：US20210217656A1

公开(公告)日：2021-07-15

申请号：US17217179

申请日：2021-03-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Felix DENG ,  Yueh Sheng OW ,  Tuck Foong KOH ,  Nuno Yen-Chu CHEN ,  Yuichi WADA ,  Sree Rangasai V. KESAPRAGADA ,  Clinton GOH

IPC: H01L21/762 ,  H01L21/67

Abstract: Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.