公开(公告)号：US20160196953A1

公开(公告)日：2016-07-07

申请号：US15070847

申请日：2016-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： VALENTIN N. TODOROW ,  SAMER BANNA ,  ANKUR AGARWAL ,  ZHIGANG CHEN ,  TSE-CHIANG WANG ,  ANDREW NGUYEN ,  MARTIN JEFF SALINAS ,  SHAHID RAUF

IPC: H01J37/32

CPC classification number: H01J37/321 ,  B44C1/227 ,  C23C16/505 ,  H01J37/32165 ,  H01J37/3244

Abstract: Methods and apparatus for plasma processing are provided herein. In some embodiments, a plasma processing apparatus includes a process chamber having an interior processing volume; a first RF coil disposed proximate the process chamber to couple RF energy into the processing volume; and a second RF coil disposed proximate the process chamber to couple RF energy into the processing volume, the second RF coil disposed coaxially with respect to the first RF coil, wherein the first and second RF coils are configured such that RF current flowing through the first RF coil is out of phase with RF current flowing through the RF second coil.

公开(公告)号：US20160004259A1

公开(公告)日：2016-01-07

申请号：US14476215

申请日：2014-09-03

Applicant: APPLIED MATERIALS, INC.

Inventor： MARTIN JEFF SALINAS ,  YOUQUN DONG ,  DAVID THOMPSON ,  MEI CHANG

IPC: G05D11/00 ,  F17C6/00

CPC classification number: F17C6/00 ,  C23C16/4481 ,  F24F6/025 ,  G05D9/02 ,  G05D9/12 ,  Y10T137/6416 ,  Y10T137/7306

Abstract: Methods and apparatus for chemical delivery are provided herein. In some embodiments, a first reservoir holds a first volume of fluid, receives a carrier gas, and outputs the carrier gas together with vapor derived from the first volume of fluid. A second reservoir holds a second volume of fluid and is capable of delivering a part of the second volume of fluid to the first reservoir. A self-regulating tube extends from the first reservoir to a region above the second volume of fluid in the second reservoir.

Abstract translation: 本文提供了用于化学物质输送的方法和装置。 在一些实施例中，第一储存器容纳第一体积的流体，接收载气，并将载气与来自第一体积流体的蒸气一起输出。 第二储存器容纳第二体积的流体，并且能够将第二体积的流体的一部分输送到第一储存器。 自调节管从第一储存器延伸到第二储存器中的第二体积流体上方的区域。

公开(公告)号：US20140366953A1

公开(公告)日：2014-12-18

申请号：US14276289

申请日：2014-05-13

Applicant: APPLIED MATERIALS, INC.

Inventor： JARED AHMAD LEE ,  DMITRY LUBOMIRSKY ,  MARTIN JEFF SALINAS ,  ANDREW NGUYEN ,  TOM K. CHO ,  ERIC A. ENGLHARDT ,  FERNANDO SILVEIRA

IPC: F16K3/02 ,  B08B9/032

CPC classification number: B08B9/0325 ,  F16K3/02 ,  F16K51/02 ,  H01L21/67017 ,  H01L21/67253 ,  Y10T137/0419 ,  Y10T137/4259

Abstract: Methods and apparatus for particle reduction in throttle gate valves used in substrate process chambers are provided herein. In some embodiments, a gate valve for use in a process chamber includes a body having an opening disposed therethrough from a first surface to an opposing second surface of the body; a pocket extending into the body from a sidewall of the opening; a gate movably disposed within the pocket between a closed position that seals the opening and an open position that reveals the opening and disposes the gate completely within the pocket; and a plurality of gas ports disposed in the gate valve configured to direct a gas flow into a portion of the gate valve fluidly coupled to the opening.

Abstract translation: 本文提供了在基板处理室中使用的节流闸阀中减小颗粒的方法和装置。 在一些实施例中，用于处理室的闸阀包括具有从主体的第一表面到相对的第二表面穿过的开口的主体; 从开口的侧壁延伸到主体中的口袋; 可移动地设置在所述口袋内的封闭位置，所述关闭位置密封所述开口和露出所述开口的打开位置，并完全将所述门置于所述口袋内; 以及设置在所述闸阀中的多个气体端口，其构造成将气流引导到与所述开口流体连接的所述闸阀的一部分。

公开(公告)号：US20130134129A1

公开(公告)日：2013-05-30

申请号：US13751229

申请日：2013-01-28

Applicant: Applied Materials, Inc.

Inventor： VALENTIN N. TODOROW ,  SAMER BANNA ,  ANKUR AGARWAL ,  ZHIGANG CHEN ,  TSE-CHIANG WANG ,  ANDREW NGUYEN ,  MARTIN JEFF SALINAS ,  SHAHID RAUF

IPC: C23C16/505 ,  B44C1/22

CPC classification number: H01J37/321 ,  B44C1/227 ,  C23C16/505 ,  H01J37/32165 ,  H01J37/3244

Abstract: Methods and apparatus for plasma processing are provided herein. In some embodiments, a plasma processing apparatus includes a process chamber having an interior processing volume; a first RF coil disposed proximate the process chamber to couple RF energy into the processing volume; and a second RF coil disposed proximate the process chamber to couple RF energy into the processing volume, the second RF coil disposed coaxially with respect to the first RF coil, wherein the first and second RF coils are configured such that RF current flowing through the first RF coil is out of phase with RF current flowing through the RF second coil.

Abstract translation: 本文提供了等离子体处理的方法和装置。 在一些实施例中，等离子体处理装置包括具有内部处理量的处理室; 设置在所述处理室附近的将RF能量耦合到所述处理容积中的第一RF线圈; 以及设置在所述处理室附近以将RF能量耦合到所述处理容积中的第二RF线圈，所述第二RF线圈相对于所述第一RF线圈同轴设置，其中所述第一和第二RF线圈被配置为使得流过所述第一RF线圈的RF电流 RF线圈与RF电流流过RF第二线圈不同相。