公开(公告)号：US20190058118A1

公开(公告)日：2019-02-21

申请号：US16169114

申请日：2018-10-24

Applicant: Arm Limited

Inventor： Carlos Alberto PAZ de ARAUJO ,  Jolanta Bozena CELINSKA ,  Kimberly Gay REID ,  Lucian SHIFREN

IPC: H01L45/00 ,  C23C14/00 ,  C23C16/50 ,  C23C16/455 ,  C23C14/16

CPC classification number: H01L45/146 ,  C23C14/0036 ,  C23C14/165 ,  C23C16/45525 ,  C23C16/50 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/16 ,  H01L45/1608

Abstract: Subject matter herein disclosed relates to an improved CEM switching device and methods for its manufacture. In this device, a conductive substrate and/or conductive overlay comprises a primary layer of a conductive material and a secondary layer of a conductive material. The primary layer contacting the CEM layer is substantially inert to the CEM layer and/or acts as an oxygen barrier for the secondary layer at temperatures used for the manufacture of the device.

公开(公告)号：US20180076388A1

公开(公告)日：2018-03-15

申请号：US15260515

申请日：2016-09-09

Applicant: ARM Limited

Inventor： Kimberly Gay REID ,  Lucian SHIFREN ,  Carlos Alberto Paz de Araujo ,  Jolanta Bozena CELINSKA

IPC: H01L45/00

CPC classification number: H01L45/146 ,  G11C13/0007 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1608 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1641

Abstract: Subject matter herein disclosed relates to a method for the manufacture of a CEM switching device providing that the CEM layer comprises a doped metal compound substantially free from metal wherein ions of the same metal element are present in different oxidation states. The method may provide a CEM layer which is born on and capable of switching with operating voltages below 2.0V.

公开(公告)号：US20180151800A1

公开(公告)日：2018-05-31

申请号：US15363216

申请日：2016-11-29

Applicant: ARM Limited

Inventor： Carlos Alberto PAZ de ARAUJO ,  Jolanta Bozena CELINSKA ,  Kimberly Gay REID ,  Lucian SHIFREN

IPC: H01L45/00 ,  C23C14/00 ,  C23C14/16 ,  C23C16/455 ,  C23C16/50

CPC classification number: H01L45/146 ,  C23C14/0036 ,  C23C14/165 ,  C23C16/45525 ,  C23C16/50 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1608

Abstract: Subject matter herein disclosed relates to an improved CEM switching device and methods for its manufacture. In this device, a conductive substrate and/or conductive overlay comprises a primary layer of a conductive material and a secondary layer of a conductive material. The primary layer contacting the CEM layer is substantially inert to the CEM layer and/or acts as an oxygen barrier for the secondary layer at temperatures used for the manufacture of the device.

公开(公告)号：US20180076386A1

公开(公告)日：2018-03-15

申请号：US15264851

申请日：2016-09-14

Applicant: ARM Limited

Inventor： Kimberly Gay REID ,  Lucian SHIFREN

IPC: H01L45/00

CPC classification number: H01L45/12 ,  H01L21/76888 ,  H01L45/04 ,  H01L45/14 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1633 ,  H01L45/1641

Abstract: Subject matter herein disclosed relates to a method for the manufacture of a switching device comprising a silicon-containing correlated electron material. In embodiments, processes are described for forming the silicon-containing correlated electron material. These processes may use comparatively lower temperatures as compared to those used for forming a correlated electron material comprising a transition metal oxide.

公开(公告)号：US20190058119A1

公开(公告)日：2019-02-21

申请号：US16169372

申请日：2018-10-24

Applicant: Arm Limited

Inventor： Kimberly Gay REID ,  Lucian SHIFREN ,  Carlos Alberto PAZ de ARAUJO ,  Jolanta Bozena CELINSKA

IPC: H01L45/00 ,  G11C13/00

Abstract: Subject matter herein disclosed relates to a method for the manufacture of a CEM switching device providing that the CEM layer comprises a doped metal compound substantially free from metal wherein ions of the same metal element are present in different oxidation states. The method may provide a CEM layer which is born on and capable of switching with operating voltages below 2.0V.

公开(公告)号：US20190051824A1

公开(公告)日：2019-02-14

申请号：US16160291

申请日：2018-10-15

Applicant: Arm Limited

Inventor： Kimberly Gay REID ,  Lucian SHIFREN

IPC: H01L45/00 ,  G11C13/00 ,  H01L21/768

CPC classification number: H01L45/12 ,  G11C13/0007 ,  G11C2213/15 ,  G11C2213/33 ,  H01L21/76888 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1633 ,  H01L45/1641 ,  H01L45/165

Abstract: Subject matter herein disclosed relates to a method for the manufacture of a switching device comprising a silicon-containing correlated electron material. In embodiments, processes are described for forming the silicon-containing correlated electron material. These processes may use comparatively lower temperatures as compared to those used for forming a correlated electron material comprising a transition metal oxide.