公开(公告)号：US20180076388A1

公开(公告)日：2018-03-15

申请号：US15260515

申请日：2016-09-09

Applicant: ARM Limited

Inventor： Kimberly Gay REID ,  Lucian SHIFREN ,  Carlos Alberto Paz de Araujo ,  Jolanta Bozena CELINSKA

IPC: H01L45/00

CPC classification number: H01L45/146 ,  G11C13/0007 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1608 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1641

Abstract: Subject matter herein disclosed relates to a method for the manufacture of a CEM switching device providing that the CEM layer comprises a doped metal compound substantially free from metal wherein ions of the same metal element are present in different oxidation states. The method may provide a CEM layer which is born on and capable of switching with operating voltages below 2.0V.

公开(公告)号：US20180151800A1

公开(公告)日：2018-05-31

申请号：US15363216

申请日：2016-11-29

Applicant: ARM Limited

Inventor： Carlos Alberto PAZ de ARAUJO ,  Jolanta Bozena CELINSKA ,  Kimberly Gay REID ,  Lucian SHIFREN

IPC: H01L45/00 ,  C23C14/00 ,  C23C14/16 ,  C23C16/455 ,  C23C16/50

CPC classification number: H01L45/146 ,  C23C14/0036 ,  C23C14/165 ,  C23C16/45525 ,  C23C16/50 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1608

Abstract: Subject matter herein disclosed relates to an improved CEM switching device and methods for its manufacture. In this device, a conductive substrate and/or conductive overlay comprises a primary layer of a conductive material and a secondary layer of a conductive material. The primary layer contacting the CEM layer is substantially inert to the CEM layer and/or acts as an oxygen barrier for the secondary layer at temperatures used for the manufacture of the device.

公开(公告)号：US20190058118A1

公开(公告)日：2019-02-21

申请号：US16169114

申请日：2018-10-24

Applicant: Arm Limited

Inventor： Carlos Alberto PAZ de ARAUJO ,  Jolanta Bozena CELINSKA ,  Kimberly Gay REID ,  Lucian SHIFREN

IPC: H01L45/00 ,  C23C14/00 ,  C23C16/50 ,  C23C16/455 ,  C23C14/16

CPC classification number: H01L45/146 ,  C23C14/0036 ,  C23C14/165 ,  C23C16/45525 ,  C23C16/50 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/16 ,  H01L45/1608

Abstract: Subject matter herein disclosed relates to an improved CEM switching device and methods for its manufacture. In this device, a conductive substrate and/or conductive overlay comprises a primary layer of a conductive material and a secondary layer of a conductive material. The primary layer contacting the CEM layer is substantially inert to the CEM layer and/or acts as an oxygen barrier for the secondary layer at temperatures used for the manufacture of the device.

公开(公告)号：US20160078999A1

公开(公告)日：2016-03-17

申请号：US14488647

申请日：2014-09-17

Applicant: ARM Limited

Inventor： Lucian SHIFREN ,  Vikas CHANDRA ,  Mudit BHARGAVA

IPC: H01G4/005 ,  H01C1/14 ,  H01C17/00

CPC classification number: H01G4/005 ,  G09C1/00 ,  H01C1/14 ,  H01C7/006 ,  H01C17/00 ,  H01C17/06586 ,  H01G4/08 ,  H01G4/14 ,  H01G4/33 ,  H04L9/0866 ,  H04L2209/12

Abstract: An electrical component is formed with a directed self assembly portion having a random electrical characteristic, such as resistance or capacitance. The random pattern can be produced by using a directed self assembly polymer with guide structures 2 including randomness inducing features. The electrical components with the random electrical characteristics may be used in electrical circuits relying upon random variation in electrical characteristics, such as physically unclonable function circuitry. The electrical components may be resistors and/or capacitors.

Abstract translation: 电气部件形成有具有诸如电阻或电容等随机电特性的定向自组装部分。 可以通过使用包括随机诱导特征的引导结构2的定向自组装聚合物来生产随机图案。 具有随机电特性的电气部件可以用于依赖于电特性随机变化的电路中，例如物理上不可克隆的功能电路。 电气部件可以是电阻器和/或电容器。

公开(公告)号：US20180114575A1

公开(公告)日：2018-04-26

申请号：US15842207

申请日：2017-12-14

Applicant: ARM Limited

Inventor： Shidhartha DAS ,  Andreas HANSSON ,  Akshay KUMAR ,  Piyush AGARWAL ,  Azeez Jennudin BHAVNAGARWALA ,  Lucian SHIFREN

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0064 ,  G11C2013/0045 ,  G11C2013/0054 ,  G11C2013/0076 ,  G11C2013/0078 ,  G11C2207/2263 ,  G11C2213/31

Abstract: A method of writing a state to a correlated electron element in a storage circuit, comprising receiving a write command to write the state into the correlated electron element; reading a stored state of the correlated electron element; comparing the state and the stored state; and enabling a write driver to write the state into the correlated electron element when the state and read state are different.

公开(公告)号：US20180076386A1

公开(公告)日：2018-03-15

申请号：US15264851

申请日：2016-09-14

Applicant: ARM Limited

Inventor： Kimberly Gay REID ,  Lucian SHIFREN

IPC: H01L45/00

CPC classification number: H01L45/12 ,  H01L21/76888 ,  H01L45/04 ,  H01L45/14 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1633 ,  H01L45/1641

Abstract: Subject matter herein disclosed relates to a method for the manufacture of a switching device comprising a silicon-containing correlated electron material. In embodiments, processes are described for forming the silicon-containing correlated electron material. These processes may use comparatively lower temperatures as compared to those used for forming a correlated electron material comprising a transition metal oxide.

公开(公告)号：US20190236441A1

公开(公告)日：2019-08-01

申请号：US15884612

申请日：2018-01-31

Applicant: Arm Limited

Inventor： Lucian SHIFREN ,  Shidhartha DAS ,  Naveen SUDA ,  Carlos Alberto PAZ de ARAUJO

IPC: G06N3/04

CPC classification number: G06N3/0481 ,  G06N3/049 ,  G06N3/0635

Abstract: Broadly speaking, the present techniques exploit the properties of correlated electron materials for artificial neural networks and neuromorphic computing. In particular, the present techniques provide apparatuses/devices that comprise at least one correlated electron switch (CES) element and which may be used as, or to form, an artificial neuron or an artificial synapse.

公开(公告)号：US20190058119A1

公开(公告)日：2019-02-21

申请号：US16169372

申请日：2018-10-24

Applicant: Arm Limited

Inventor： Kimberly Gay REID ,  Lucian SHIFREN ,  Carlos Alberto PAZ de ARAUJO ,  Jolanta Bozena CELINSKA

IPC: H01L45/00 ,  G11C13/00

Abstract: Subject matter herein disclosed relates to a method for the manufacture of a CEM switching device providing that the CEM layer comprises a doped metal compound substantially free from metal wherein ions of the same metal element are present in different oxidation states. The method may provide a CEM layer which is born on and capable of switching with operating voltages below 2.0V.

公开(公告)号：US20190051824A1

公开(公告)日：2019-02-14

申请号：US16160291

申请日：2018-10-15

Applicant: Arm Limited

Inventor： Kimberly Gay REID ,  Lucian SHIFREN

IPC: H01L45/00 ,  G11C13/00 ,  H01L21/768

CPC classification number: H01L45/12 ,  G11C13/0007 ,  G11C2213/15 ,  G11C2213/33 ,  H01L21/76888 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1633 ,  H01L45/1641 ,  H01L45/165

Abstract: Subject matter herein disclosed relates to a method for the manufacture of a switching device comprising a silicon-containing correlated electron material. In embodiments, processes are described for forming the silicon-containing correlated electron material. These processes may use comparatively lower temperatures as compared to those used for forming a correlated electron material comprising a transition metal oxide.

公开(公告)号：US20180175615A1

公开(公告)日：2018-06-21

申请号：US15381393

申请日：2016-12-16

Applicant: ARM Limited

Inventor： Bal S. SANDHU ,  Lucian SHIFREN ,  Glen Arnold ROSENDALE

IPC: H02H9/04 ,  H03K5/08 ,  H01L23/64

Abstract: A circuit is provided for limiting an applied voltage applied between a power line and an electrical ground. The circuit includes a transistive element connected between the power line and the electrical ground to provide a channel, where current flow through the channel is controlled by a control voltage provided to a control terminal of the transistive element. A first Correlated Electron Material (CEM) device having an impedance state is coupled between the power line and a first node, and a sensing circuit coupled between the first node and the control terminal of the transistive element. The sensing circuit is configured to detect a voltage drop across the CEM device and to provide the control voltage. The channel of the transistive element is opened when the detected voltage drop across the CEM device exceeds a threshold. The CEM device may contain a transition metal oxide (TMO), for example.