公开(公告)号：US09981286B2

公开(公告)日：2018-05-29

申请号：US15064404

申请日：2016-03-08

Applicant: ASM IP HOLDING B.V.

Inventor： Jacob Huffman Woodruff ,  Michael Eugene Givens ,  Bed Sharma ,  Petri Räisänen

IPC: C23C16/42 ,  B05D1/00

CPC classification number: B05D1/60 ,  B05D2203/30 ,  C23C16/04 ,  C23C16/42 ,  C23C16/45525 ,  H01L21/285

Abstract: Processes are provided for selectively depositing a metal silicide material on a first H-terminated surface of a substrate relative to a second, different surface of the same substrate. In some aspects, methods of forming a metal silicide contact layer for use in integrated circuit fabrication are provided.

公开(公告)号：US20170259298A1

公开(公告)日：2017-09-14

申请号：US15064404

申请日：2016-03-08

Applicant: ASM IP Holding B.V.

Inventor： Jacob Huffman Woodruff ,  Michael Eugene Givens ,  Bed Sharma ,  Petri Räisänen

IPC: B05D1/00

CPC classification number: B05D1/60 ,  B05D2203/30 ,  C23C16/04 ,  C23C16/42 ,  C23C16/45525 ,  H01L21/285

Abstract: Processes are provided for selectively depositing a metal silicide material on a first H-terminated surface of a substrate relative to a second, different surface of the same substrate. In some aspects, methods of forming a metal silicide contact layer for use in integrated circuit fabrication are provided.

公开(公告)号：US10892156B2

公开(公告)日：2021-01-12

申请号：US15589861

申请日：2017-05-08

Applicant: ASM IP Holding B.V.

Inventor： Jacob Huffman Woodruff ,  Bed Sharma ,  Eric James Shero

IPC: H01L21/02 ,  H01L21/033 ,  C23C16/455 ,  C23C16/34 ,  H01L21/311

Abstract: A method for forming a silicon nitride film on a substrate is disclosed. The method may include; forming a cyclical silicon nitride film on the substrate by a cyclical deposition process, wherein the cyclical deposition process comprises at least one of; contacting the substrate with a first reactant comprising a silicon halide source and contacting the substrate with a second reactant comprising a nitrogen source. The method may also include exposing the cyclical silicon nitride film to a plasma. Semiconductor device structures comprising a silicon nitride film are also disclosed.

公开(公告)号：US20180323055A1

公开(公告)日：2018-11-08

申请号：US15589849

申请日：2017-05-08

Applicant: ASM IP Holding B.V.

Inventor： Jacob Huffman Woodruff ,  Bed Sharma

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/768 ,  C23C16/34 ,  C23C16/455 ,  C23C16/56

Abstract: A method for selectively forming a silicon nitride film on a substrate comprising a first metallic surface and a second dielectric surface by a cyclical deposition process is disclosed. The method may comprise contacting the substrate with a first reactant comprising a silicon halide source and contacting the substrate with a second reactant comprising a nitrogen source, wherein the incubation period for the first metallic surface is less than the incubation period for the second dielectric surface. Semiconductor device structures comprising a selective silicon nitride film are also disclosed.

公开(公告)号：US11848200B2

公开(公告)日：2023-12-19

申请号：US16885098

申请日：2020-05-27

Applicant: ASM IP Holding B.V.

Inventor： Jacob Woodruff ,  Bed Sharma

IPC: H01L21/02 ,  H01L21/768 ,  C23C16/34 ,  C23C16/455 ,  C23C16/56 ,  C23C16/04 ,  H01L23/00

CPC classification number: H01L21/0228 ,  C23C16/04 ,  C23C16/345 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/76834 ,  H01L23/00

Abstract: A method for selectively forming a silicon nitride film on a substrate comprising a first metallic surface and a second dielectric surface by a cyclical deposition process is disclosed. The method may comprise contacting the substrate with a first reactant comprising a silicon halide source and contacting the substrate with a second reactant comprising a nitrogen source, wherein the incubation period for the first metallic surface is less than the incubation period for the second dielectric surface. Semiconductor device structures comprising a selective silicon nitride film are also disclosed.

公开(公告)号：US20200294789A1

公开(公告)日：2020-09-17

申请号：US16885098

申请日：2020-05-27

Applicant: ASM IP Holding B.V.

Inventor： Jacob Woodruff ,  Bed Sharma

IPC: H01L21/02 ,  H01L21/768 ,  C23C16/34 ,  C23C16/455 ,  C23C16/56 ,  C23C16/04

Abstract: A method for selectively forming a silicon nitride film on a substrate comprising a first metallic surface and a second dielectric surface by a cyclical deposition process is disclosed. The method may comprise contacting the substrate with a first reactant comprising a silicon halide source and contacting the substrate with a second reactant comprising a nitrogen source, wherein the incubation period for the first metallic surface is less than the incubation period for the second dielectric surface. Semiconductor device structures comprising a selective silicon nitride film are also disclosed.

公开(公告)号：US10770286B2

公开(公告)日：2020-09-08

申请号：US15589849

申请日：2017-05-08

Applicant: ASM IP Holding B.V.

Inventor： Jacob Huffman Woodruff ,  Bed Sharma

IPC: H01L21/02 ,  H01L21/768 ,  C23C16/34 ,  C23C16/455 ,  C23C16/56 ,  C23C16/04

Abstract: A method for selectively forming a silicon nitride film on a substrate comprising a first metallic surface and a second dielectric surface by a cyclical deposition process is disclosed. The method may comprise contacting the substrate with a first reactant comprising a silicon halide source and contacting the substrate with a second reactant comprising a nitrogen source, wherein the incubation period for the first metallic surface is less than the incubation period for the second dielectric surface. Semiconductor device structures comprising a selective silicon nitride film are also disclosed.

公开(公告)号：US20180323056A1

公开(公告)日：2018-11-08

申请号：US15589861

申请日：2017-05-08

Applicant: ASM IP Holding B.V.

Inventor： Jacob Huffman Woodruff ,  Bed Sharma ,  Eric James Shero

IPC: H01L21/02 ,  H01L21/033 ,  C23C16/455 ,  C23C16/34

CPC classification number: H01L21/0228 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0332

Abstract: A method for forming a silicon nitride film on a substrate is disclosed. The method may include; forming a cyclical silicon nitride film on the substrate by a cyclical deposition process, wherein the cyclical deposition process comprises at least one of; contacting the substrate with a first reactant comprising a silicon halide source and contacting the substrate with a second reactant comprising a nitrogen source. The method may also include exposing the cyclical silicon nitride film to a plasma. Semiconductor device structures comprising a silicon nitride film are also disclosed.