公开(公告)号：US09981286B2

公开(公告)日：2018-05-29

申请号：US15064404

申请日：2016-03-08

Applicant: ASM IP HOLDING B.V.

Inventor： Jacob Huffman Woodruff ,  Michael Eugene Givens ,  Bed Sharma ,  Petri Räisänen

IPC: C23C16/42 ,  B05D1/00

CPC classification number: B05D1/60 ,  B05D2203/30 ,  C23C16/04 ,  C23C16/42 ,  C23C16/45525 ,  H01L21/285

Abstract: Processes are provided for selectively depositing a metal silicide material on a first H-terminated surface of a substrate relative to a second, different surface of the same substrate. In some aspects, methods of forming a metal silicide contact layer for use in integrated circuit fabrication are provided.

公开(公告)号：US10770286B2

公开(公告)日：2020-09-08

申请号：US15589849

申请日：2017-05-08

Applicant: ASM IP Holding B.V.

Inventor： Jacob Huffman Woodruff ,  Bed Sharma

IPC: H01L21/02 ,  H01L21/768 ,  C23C16/34 ,  C23C16/455 ,  C23C16/56 ,  C23C16/04

Abstract: A method for selectively forming a silicon nitride film on a substrate comprising a first metallic surface and a second dielectric surface by a cyclical deposition process is disclosed. The method may comprise contacting the substrate with a first reactant comprising a silicon halide source and contacting the substrate with a second reactant comprising a nitrogen source, wherein the incubation period for the first metallic surface is less than the incubation period for the second dielectric surface. Semiconductor device structures comprising a selective silicon nitride film are also disclosed.

公开(公告)号：US20180323056A1

公开(公告)日：2018-11-08

申请号：US15589861

申请日：2017-05-08

Applicant: ASM IP Holding B.V.

Inventor： Jacob Huffman Woodruff ,  Bed Sharma ,  Eric James Shero

IPC: H01L21/02 ,  H01L21/033 ,  C23C16/455 ,  C23C16/34

CPC classification number: H01L21/0228 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0332

Abstract: A method for forming a silicon nitride film on a substrate is disclosed. The method may include; forming a cyclical silicon nitride film on the substrate by a cyclical deposition process, wherein the cyclical deposition process comprises at least one of; contacting the substrate with a first reactant comprising a silicon halide source and contacting the substrate with a second reactant comprising a nitrogen source. The method may also include exposing the cyclical silicon nitride film to a plasma. Semiconductor device structures comprising a silicon nitride film are also disclosed.

公开(公告)号：US20170259298A1

公开(公告)日：2017-09-14

申请号：US15064404

申请日：2016-03-08

Applicant: ASM IP Holding B.V.

Inventor： Jacob Huffman Woodruff ,  Michael Eugene Givens ,  Bed Sharma ,  Petri Räisänen

IPC: B05D1/00

CPC classification number: B05D1/60 ,  B05D2203/30 ,  C23C16/04 ,  C23C16/42 ,  C23C16/45525 ,  H01L21/285

Abstract: Processes are provided for selectively depositing a metal silicide material on a first H-terminated surface of a substrate relative to a second, different surface of the same substrate. In some aspects, methods of forming a metal silicide contact layer for use in integrated circuit fabrication are provided.

公开(公告)号：US20170186624A1

公开(公告)日：2017-06-29

申请号：US15458599

申请日：2017-03-14

Applicant: ASM IP Holding B.V.

Inventor： Jacob Huffman Woodruff

IPC: H01L21/3205 ,  H01L21/768

CPC classification number: H01L21/32053 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76889 ,  H01L21/76895 ,  H01L29/665 ,  H01L29/66515 ,  H01L29/78

Abstract: A method of forming a metal silicide can include depositing an interface layer on exposed silicon regions of a substrate, where the interface layer includes a silicide forming metal and a non-silicide forming element. The method can include depositing a metal oxide layer over the interface layer, where the metal oxide layer includes a second silicide forming metal. The substrate can be subsequently heated to form the metal silicide beneath the interface layer, using silicon from the exposed silicon regions, the first silicide forming metal of the interface layer and the second silicide forming metal of the metal oxide layer.

公开(公告)号：US20170098545A1

公开(公告)日：2017-04-06

申请号：US14873494

申请日：2015-10-02

Applicant: ASM IP Holding B.V.

Inventor： Jacob Huffman Woodruff

IPC: H01L21/285 ,  H01L21/768

CPC classification number: H01L21/32053 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76889 ,  H01L21/76895 ,  H01L29/665 ,  H01L29/66515 ,  H01L29/78

Abstract: A method of forming a metal silicide can include depositing an interface layer on exposed silicon regions of a substrate, where the interface layer includes a silicide forming metal and a non-silicide forming element. The method can include depositing a metal oxide layer over the interface layer, where the metal oxide layer includes a second silicide forming metal. The substrate can be subsequently heated to form the metal silicide beneath the interface layer, using silicon from the exposed silicon regions, the first silicide forming metal of the interface layer and the second silicide forming metal of the metal oxide layer.

公开(公告)号：US10199234B2

公开(公告)日：2019-02-05

申请号：US15458599

申请日：2017-03-14

Applicant: ASM IP Holding B.V.

Inventor： Jacob Huffman Woodruff

IPC: H01L21/285 ,  H01L21/768 ,  H01L21/3205 ,  H01L29/66 ,  H01L29/78

Abstract: A method of forming a metal silicide can include depositing an interface layer on exposed silicon regions of a substrate, where the interface layer includes a silicide forming metal and a non-silicide forming element. The method can include depositing a metal oxide layer over the interface layer, where the metal oxide layer includes a second silicide forming metal. The substrate can be subsequently heated to form the metal silicide beneath the interface layer, using silicon from the exposed silicon regions, the first silicide forming metal of the interface layer and the second silicide forming metal of the metal oxide layer.

公开(公告)号：US09607842B1

公开(公告)日：2017-03-28

申请号：US14873494

申请日：2015-10-02

Applicant: ASM IP Holding B.V.

Inventor： Jacob Huffman Woodruff

IPC: H01L21/285 ,  H01L21/768

CPC classification number: H01L21/32053 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76889 ,  H01L21/76895 ,  H01L29/665 ,  H01L29/66515 ,  H01L29/78

Abstract: A method of forming a metal silicide can include depositing an interface layer on exposed silicon regions of a substrate, where the interface layer includes a silicide forming metal and a non-silicide forming element. The method can include depositing a metal oxide layer over the interface layer, where the metal oxide layer includes a second silicide forming metal. The substrate can be subsequently heated to form the metal silicide beneath the interface layer, using silicon from the exposed silicon regions, the first silicide forming metal of the interface layer and the second silicide forming metal of the metal oxide layer.

公开(公告)号：US20160372365A1

公开(公告)日：2016-12-22

申请号：US14741249

申请日：2015-06-16

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Michael Eugene Givens ,  Jacob Huffman Woodruff ,  Qi Xie ,  Jan Willem Maes

IPC: H01L21/768 ,  H01L21/02

CPC classification number: H01L21/76829 ,  C23C16/02 ,  C23C16/045 ,  C23C16/305 ,  C23C16/45553 ,  H01L21/02175 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/285 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76895 ,  H01L23/485 ,  H01L29/42364 ,  H01L29/517 ,  H01L29/78

Abstract: In some aspects, methods of forming a metal chalcogenide thin film are provided. According to some methods, a metal chalcogenide thin film is deposited on a substrate in a reaction space in a cyclical deposition process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase chalcogen reactant. In some aspects, methods of forming three-dimensional structure on a substrate surface are provided. In some embodiments, the method includes forming a metal chalcogenide dielectric layer between a substrate and a conductive layer. In some embodiments the method includes forming an MIS-type contact structure including a metal chalcogenide dielectric layer.

Abstract translation: 在一些方面，提供了形成金属硫族化物薄膜的方法。 根据一些方法，金属硫族化物薄膜在循环沉积过程中在反应空间中沉积在基底上，其中至少一个循环包括交替地和顺序地接触基底与第一气相金属反应物和第二气相 硫属反应物。 在一些方面，提供了在基板表面上形成三维结构的方法。 在一些实施例中，该方法包括在衬底和导电层之间形成金属硫属元素化物介质层。 在一些实施例中，该方法包括形成包括金属硫族化物介电层的MIS型接触结构。

公开(公告)号：US10892156B2

公开(公告)日：2021-01-12

申请号：US15589861

申请日：2017-05-08

Applicant: ASM IP Holding B.V.

Inventor： Jacob Huffman Woodruff ,  Bed Sharma ,  Eric James Shero

IPC: H01L21/02 ,  H01L21/033 ,  C23C16/455 ,  C23C16/34 ,  H01L21/311

Abstract: A method for forming a silicon nitride film on a substrate is disclosed. The method may include; forming a cyclical silicon nitride film on the substrate by a cyclical deposition process, wherein the cyclical deposition process comprises at least one of; contacting the substrate with a first reactant comprising a silicon halide source and contacting the substrate with a second reactant comprising a nitrogen source. The method may also include exposing the cyclical silicon nitride film to a plasma. Semiconductor device structures comprising a silicon nitride film are also disclosed.