公开(公告)号：USD990534S1

公开(公告)日：2023-06-27

申请号：US29750123

申请日：2020-09-11

Applicant: ASM IP Holding B.V.

Designer： Shreyans Kedia ,  Daniel Maurice ,  Govindarajasekhar Singu ,  Dinkar Nandwana ,  Frank Wing-Fung Cheng

Abstract: FIG. 1 is a top perspective view of a weighted lift pin showing our new design;
FIG. 2 is a bottom perspective view thereof;
FIG. 3 is a side elevational view thereof;
FIG. 4 is a top plan view thereof;
FIG. 5 a bottom plan view thereof; and,
FIG. 6 is an exploded view thereof.

公开(公告)号：US20210210373A1

公开(公告)日：2021-07-08

申请号：US17140661

申请日：2021-01-04

Applicant: ASM IP Holding B.V.

Inventor： Govindarajasekhar Singu ,  Dinkar Nandwana ,  Todd Robert Dunn ,  Shankar Swaminathan ,  Bhushan Zope ,  Carl Louis White

IPC: H01L21/687 ,  H01L21/683

Abstract: A reactor system may comprise a reaction chamber enclosed by a chamber sidewall, and a susceptor disposed in the reaction chamber between a reaction space and a lower chamber space comprised in the reaction chamber. The susceptor may comprise a pin hole disposed through the susceptor such that the pin hole is in fluid communication with the reaction space and the lower chamber space, and such that the reaction space is in fluid communication with the lower chamber space. A lift pin may be disposed in the pin hole. The lift pin may comprise a pin body comprising a pin channel, defined by a pin channel surface, disposed in the pin body such that the reaction space is in fluid communication with the lower chamber space when the lift pin is disposed in the pin hole.

公开(公告)号：US20230088313A1

公开(公告)日：2023-03-23

申请号：US17948674

申请日：2022-09-20

Applicant: ASM IP Holding, B.V.

Inventor： Herbert Terhorst ,  Dinkar Nandwana ,  Eric Shero ,  Allen D'Ambra ,  Jessica Akemi Cimada da Silva ,  Daner Abdula

IPC: B05B1/00 ,  B05B1/18

Abstract: A gas distribution system having a first plurality of apertures to supply a gas source to a reaction chamber and a second plurality of apertures surrounding the first plurality of apertures and configured to remove the gas from the reaction chamber. In one embodiment, the second plurality of apertures may gradually increase in diameter as the distance from a main exhaust channel increases. Alternatively, or in addition, the angle spacing between adjacent apertures may gradually decrease as the distance from the main exhaust channel increases.

公开(公告)号：US20200299836A1

公开(公告)日：2020-09-24

申请号：US16813527

申请日：2020-03-09

Applicant: ASM IP HOLDING B.V.

Inventor： Dinkar Nandwana ,  Jereld Lee Winkler ,  Eric James Shero ,  Todd Robert Dunn ,  Carl Louis White

IPC: C23C16/44 ,  C23C16/455 ,  H01L21/67

Abstract: Herein disclosed are systems and methods related to semiconductor processing device including a manifold including a bore configured to deliver a gas to a reaction chamber, the manifold including a first block mounted to a second block, the first and second mounted blocks cooperating to at least partially define the bore. A supply channel provides fluid communication between a gas source and the bore, and the supply channel is disposed at least partially in the second block. A metallic seal is disposed about the bore at an interface between the first and second block. Advantageously, the metallic seal improves sealing between the interface between the first block and the second block.

公开(公告)号：US20240218514A1

公开(公告)日：2024-07-04

申请号：US18395006

申请日：2023-12-22

Applicant: ASM IP Holding B.V.

Inventor： Christopher Falcone ,  Dinkar Nandwana ,  Kyle Fondurulia ,  Vishnu Shakti

IPC: C23C16/52 ,  C23C16/455 ,  C23C16/458

CPC classification number: C23C16/52 ,  C23C16/45565 ,  C23C16/45589 ,  C23C16/4583

Abstract: Methods and apparatuses for adjusting a process chamber volume are described. For example, a process chamber, after removing at least a component used to perform a function associated with the process chamber, may be installed with a fixture to adjust a volume of the process chamber. The process chamber with the fixture may reduce the amount of precursor gases and processing time for coating a workpiece. The workpiece, after the coating, may be placed in another process chamber to perform a function associated with the other process chamber.

公开(公告)号：US20210214846A1

公开(公告)日：2021-07-15

申请号：US17149023

申请日：2021-01-14

Applicant: ASM IP HOLDING B.V.

Inventor： Dinkar Nandwana ,  Carl Louis White ,  Eric James Shero ,  William George Petro ,  Herbert Terhorst ,  Gnyanesh Trivedi ,  Mark Olstad ,  Ankit Kimtee ,  Kyle Fondurulia ,  Michael Schmotzer ,  Jereld Lee Winkler

IPC: C23C16/455 ,  C23C16/458

Abstract: The present disclosure pertains to embodiments of a showerhead assembly which can be used to deposit semiconductor layers using processes such as atomic layer deposition (ALD). The showerhead assembly has a showerhead which has an increased thickness which advantageously decreases reactor chamber size and decreases cycling time. Decreased cycling time can improve throughput and decrease costs.

公开(公告)号：US12033885B2

公开(公告)日：2024-07-09

申请号：US17140661

申请日：2021-01-04

Applicant: ASM IP Holding B.V.

Inventor： Govindarajasekhar Singu ,  Dinkar Nandwana ,  Todd Robert Dunn ,  Shankar Swaminathan ,  Bhushan Zope ,  Carl Louis White

IPC: H01L21/687 ,  H01L21/683

CPC classification number: H01L21/68742 ,  H01L21/6838

Abstract: A reactor system may comprise a reaction chamber enclosed by a chamber sidewall, and a susceptor disposed in the reaction chamber between a reaction space and a lower chamber space comprised in the reaction chamber. The susceptor may comprise a pin hole disposed through the susceptor such that the pin hole is in fluid communication with the reaction space and the lower chamber space, and such that the reaction space is in fluid communication with the lower chamber space. A lift pin may be disposed in the pin hole. The lift pin may comprise a pin body comprising a pin channel, defined by a pin channel surface, disposed in the pin body such that the reaction space is in fluid communication with the lower chamber space when the lift pin is disposed in the pin hole.

公开(公告)号：US20240198366A1

公开(公告)日：2024-06-20

申请号：US18540419

申请日：2023-12-14

Applicant: ASM IP Holding B.V.

Inventor： Dinkar Nandwana ,  Allen D'Ambra ,  Dinh Tran ,  Chen Ni ,  Gary Paulsen ,  Michael Samy Boulos Hanna Elkomos

IPC: B05B1/30 ,  B05B1/00 ,  B05B1/18

CPC classification number: B05B1/3006 ,  B05B1/005 ,  B05B1/185

Abstract: Methods and apparatuses for measuring a flow conductance of a showerhead assembly are described. For example, a showerhead assembly may be seated in a housing. A gas source may be coupled to an intake port of the showerhead assembly and supply gas to the showerhead assembly via the intake port. A pressure controller may be coupled between the gas source and the showerhead assembly. The pressure controller may measure a flow throughput of the gas that passes through the pressure controller. The pressure controller may maintain the gas being supplied to the showerhead assembly at a first pressure value. A pressure transducer coupled to an exhaust port of the showerhead assembly may measure a second pressure value. A controller may determine a flow conductance of the showerhead assembly based on the flow throughput and the first and second pressure values.

公开(公告)号：US11830731B2

公开(公告)日：2023-11-28

申请号：US17074887

申请日：2020-10-20

Applicant: ASM IP HOLDING B.V.

Inventor： Dinkar Nandwana ,  Eric James Shero ,  Carl Louis White ,  Todd Robert Dunn ,  William George Petro ,  Jereld Lee Winkler ,  Aniket Chitale

IPC: C23C16/455 ,  H01L21/02

CPC classification number: H01L21/0228 ,  C23C16/45544 ,  H01L21/0217 ,  H01L21/02164 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189

Abstract: The present disclosure pertains to embodiments of a semiconductor deposition reactor manifold and methods of using the semiconductor deposition reactor manifold which can be used to deposit semiconductor layers using processes such as atomic layer deposition (ALD). The semiconductor deposition reactor manifold has a bore, a first supply channel, and a second supply channel. Advantageously, the first supply channel and the second supply channel merge with the bore in an offset fashion which leads to reduced cross-contamination within the supply channels.

公开(公告)号：US20230069359A1

公开(公告)日：2023-03-02

申请号：US18045419

申请日：2022-10-10

Applicant: ASM IP HOLDING B.V.

Inventor： Shuyang Zheng ,  Jereld Lee Winkler ,  Ankit Kimtee ,  Eric James Shero ,  Mimoh Kwatra ,  Dinkar Nandwana ,  Todd Robert Dunn ,  Carl Louis White

IPC: C23C16/455

Abstract: Herein disclosed are systems and methods related to semiconductor processing device including a manifold including a bore configured to deliver a gas to a reaction chamber, the manifold including a first block mounted to a second block, the first and second mounted blocks cooperating to at least partially define the bore. The manifold may further comprise an insulator cap disposed about the first block or the second block. The semiconductor processing device may comprise at least three valve blocks mounted to the second block so that a precursor backflow is prevented. Heater rod(s) can extend through the second block to a location adjacent the first block.