公开(公告)号：US20230160057A1

公开(公告)日：2023-05-25

申请号：US17989760

申请日：2022-11-18

Applicant: ASM IP Holding B.V.

Inventor： Jiyeon Kim ,  YoungChol Byun ,  Petri Raisanen ,  Dong Li ,  Eric James Shero ,  Yasiel Cabrera ,  Arul Vigneswar Ravichandran ,  Eric Christopher Stevens ,  Paul Ma

IPC: C23C16/14 ,  H01L21/3205 ,  H01L21/67 ,  H01L21/768

CPC classification number: C23C16/14 ,  H01L21/32051 ,  H01L21/67103 ,  H01L21/76837

Abstract: Molybdenum (Mo) metal-on-metal (MoM) deposition methods for providing true bottom-up fill in vias and/or other gap features in device structures. These device structures contain metal at the bottom surface and have dielectric sidewalls. The deposition process provides molybdenum growth only, in some cases, on the metal film/layer to provide a selective process that can be called a metal-on-metal (MoM) process. The Mo MoM deposition process described herein are not limited to thin films (e.g., films less than 50 Å) and can be used to deposit thicker films (e.g., greater than 50 Å in some cases and greater than 200 Å in other useful cases) on metal surfaces while no, or substantially no, deposition is found on dielectric surfaces.

公开(公告)号：US20230295795A1

公开(公告)日：2023-09-21

申请号：US18119884

申请日：2023-03-10

Applicant: ASM IP Holding B.V.

Inventor： Yasiel Cabrera ,  YoungChol Byun ,  Arul Vigneswar Ravichandran ,  Salvatore Luiso ,  Sang Ho Yu ,  Moataz Bellah Mousa

IPC: C23C16/04 ,  C23C16/30 ,  C23C16/56 ,  H01J37/32

CPC classification number: C23C16/045 ,  C23C16/303 ,  C23C16/56 ,  H01J37/32357 ,  H01J37/32853 ,  H01J2237/3321 ,  H01J2237/335

Abstract: Methods and systems for forming a structure are disclosed. Exemplary methods include providing a substrate comprising a gap within a reaction chamber, selectively depositing a first material comprising molybdenum on a first surface within the gap relative to a second surface within the gap to at least partially fill the gap, and after the step of selectively depositing the first material comprising molybdenum, conformally depositing a second material comprising molybdenum over the first surface and the second surface.

公开(公告)号：US20230238243A1

公开(公告)日：2023-07-27

申请号：US18100298

申请日：2023-01-23

Applicant: ASM IP Holding B.V.

Inventor： Mojtaba Samiee ,  Petri Raisanen ,  Dong Li ,  Yasiel Cabrera

IPC: H01L21/28 ,  H01L29/49

CPC classification number: H01L21/28247 ,  H01L29/4966 ,  H01L21/28088

Abstract: Methods of forming structures including a layer of metal carbon nitride (MCN) and of mitigating metal loss from and/or tuning the layer of metal carbon nitride are disclosed. Systems for forming the layers and mitigating metal loss and structures formed using the methods are also disclosed.

公开(公告)号：US20230215763A1

公开(公告)日：2023-07-06

申请号：US18147038

申请日：2022-12-28

Applicant: ASM IP Holding B.V.

Inventor： YoungChol Byun ,  Moataz Bellah Mousa ,  Dong Li ,  Arul Vigneswar Ravichandran ,  Yasiel Cabrera ,  Salvatore Luiso

IPC: H01L21/768 ,  H01L21/02 ,  C23C16/02 ,  C23C16/34 ,  C23C16/08 ,  C23C16/56

CPC classification number: H01L21/76879 ,  H01L21/02068 ,  H01L21/76883 ,  C23C16/0227 ,  C23C16/34 ,  C23C16/08 ,  C23C16/345 ,  C23C16/56

Abstract: Methods and systems for cleaning and treating a surface of a substrate. An exemplary method includes providing a substrate comprising a gap comprising a metal oxide and a dielectric material within a reaction chamber, and using a thermal process to selectively remove the metal oxide. Exemplary methods can further include a step of depositing a metal-containing material within the gap to at least partially fill the gap and using a direct plasma and treating a surface of the metal-containing material to remove oxygen from the surface of the metal-containing material. Exemplary systems can perform the methods.

公开(公告)号：US20230163028A1

公开(公告)日：2023-05-25

申请号：US18148687

申请日：2022-12-30

Applicant: ASM IP Holding B.V.

Inventor： Salvatore Luiso ,  YoungChol Byun ,  Holger Saare ,  Jaebeom Lee ,  Sukanya Datta ,  Jiyeon Kim ,  Petri Raisanen ,  Dong Li ,  Eric James Shero ,  Yasiel Cabrera ,  Arul Vigneswar Ravichandran ,  Eric Christopher Stevens ,  Paul Ma

IPC: H01L21/768 ,  C23C16/455 ,  C23C16/02

CPC classification number: H01L21/76879 ,  C23C16/0236 ,  C23C16/45553 ,  C23C16/06

Abstract: Molybdenum (Mo) metal-on-metal (MoM) deposition methods for providing true bottom-up fill in vias and/or other gap features in device structures. These device structures contain metal at the bottom surface and have dielectric sidewalls. The deposition process provides molybdenum growth only, in some cases, on the metal film/layer to provide a selective process that can be called a metal-on-metal (MoM) process. The Mo MoM deposition process described herein are not limited to thin films (e.g., films less than 50 Å) and can be used to deposit thicker films (e.g., greater than 50 Å in some cases and greater than 200 Å in other useful cases) on metal surfaces while no, or substantially no, deposition is found on dielectric surfaces.