公开(公告)号：US10551750B2

公开(公告)日：2020-02-04

申请号：US16393055

申请日：2019-04-24

Applicant: ASML Netherlands B.V.

Inventor： Adam Jan Urbanczyk ,  Hans Van Der Laan ,  Grzegorz Grzela ,  Alberto Da Costa Assafrao ,  Chien-Hung Tseng ,  Jay Jianhui Chen

IPC: G03F7/20 ,  G01N21/47 ,  G01N21/956

Abstract: Disclosed is a process monitoring method, and an associated metrology apparatus. The method comprises: obtaining measured target response sequence data relating to a measurement response of a target formed on a substrate by a lithographic process to measurement radiation comprising multiple measurement profiles, wherein the measured target response sequence data describes a variation of the measurement response of the target in response to variations of the measurement profiles; obtaining reference target response sequence data relating to a measurement response of the target as designed to the measurement radiation, wherein the reference target response sequence data describes an optimal measurement response of the target in response to designed measurement profiles without un-designed variation; comparing the measured target response sequence data and the reference target response sequence data; and determining values for variations in stack parameters of the target from the measured target response sequence data based on the comparison.

公开(公告)号：US09903823B2

公开(公告)日：2018-02-27

申请号：US14945257

申请日：2015-11-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Yen-Wen Lu ,  Jay Jianhui Chen ,  Wei Liu ,  Boris Menchtchikov ,  Jen-Shiang Wang ,  Te-Chih Huang

IPC: G01N21/88 ,  G01B11/27 ,  G03F7/20 ,  G01N21/95

CPC classification number: G01N21/8806 ,  G01B11/272 ,  G01N21/9501 ,  G01N2021/8822 ,  G03F7/70516 ,  G03F7/70633 ,  G03F7/70683

Abstract: A method to determine an overlay error between a first structure and a second structure, wherein the first structure and second structures are on different layers on a substrate and are imaged onto the substrate by a lithographic process, the method comprising: obtaining an apparent overlay error; obtaining a systematic error caused by a factor other than misalignment of the first and second structures; and determining the overlay error by removing the systematic error from the apparent overlay error. The method may alternatively comprise obtaining apparent characteristics of diffraction orders of diffraction by an overlapping portion of the first and second structures; obtaining corrected characteristics of the diffraction orders; determining the overlay error from the corrected characteristics; and adjusting a characteristic of the lithographic process based on the overlay error.

公开(公告)号：US20180217508A1

公开(公告)日：2018-08-02

申请号：US15874972

申请日：2018-01-19

Applicant: ASML Netherlands B.V.

Inventor： Adam URBANCZYK ,  Hans Van Der Laan ,  Grzegorz Grzela ,  Alberto Da Costa Assafrao ,  Chien-Hung Tseng ,  Jay Jianhui Chen

IPC: G03F7/20

CPC classification number: G03F7/70625 ,  G01N21/47 ,  G01N2021/95615 ,  G03F7/70516 ,  G03F7/70525 ,  G03F7/70633

Abstract: Disclosed is a process monitoring method, and an associated metrology apparatus. The method comprises: comparing measured target response spectral sequence data relating to the measurement response of actual targets to equivalent reference target response sequence data relating to a measurement response of the targets as designed; and performing a process monitoring action based on the comparison of said measured target response sequence data and reference target response sequence data. The method may also comprise determining stack parameters from the measured target response spectral sequence data and reference target response spectral sequence data.

公开(公告)号：US10983440B2

公开(公告)日：2021-04-20

申请号：US16301458

申请日：2017-05-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Jen-Shiang Wang ,  Jay Jianhui Chen

IPC: G03F7/20

Abstract: A method including: obtaining a relationship between a performance indicator of a substrate measurement recipe and a parameter of the substrate measurement recipe; deriving a range of the parameter from the relationship, wherein absolute values of the performance indicator satisfy a first condition or a magnitude of variation of the performance indicator satisfies a second condition, when the first parameter is in the range; selecting a substrate measurement recipe that has the parameter in the range; and inspecting a substrate with the selected substrate measurement recipe.

公开(公告)号：US11281113B2

公开(公告)日：2022-03-22

申请号：US17053255

申请日：2019-05-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Danying Li ,  Chi-Hsiang Fan ,  Abdalmohsen Elmalk ,  Youping Zhang ,  Jay Jianhui Chen ,  Kui-Jun Huang

IPC: G03F7/20

Abstract: A method for determining a stack configuration for a substrate subjected to a patterning process. The method includes obtaining (i) measurement data of a stack configuration with location information on a printed substrate, (ii) a substrate model configured to predict a stack characteristic based on a location of the substrate, and (iii) a stack map including a plurality of stack configurations based on the substrate model. The method iteratively determines values of model parameters of the substrate model based on a fitting between the measurement data and the plurality of stack configurations of the stack map, and predicts an optimum stack configuration at a particular location based on the substrate model using the values of the model parameters.

公开(公告)号：US10310388B2

公开(公告)日：2019-06-04

申请号：US15874972

申请日：2018-01-19

Applicant: ASML Netherlands B.V.

Inventor： Adam Urbanczyk ,  Hans Van Der Laan ,  Grzegorz Grzela ,  Alberto Da Costa Assafrao ,  Chien-Hung Tseng ,  Jay Jianhui Chen

IPC: G03F7/20 ,  G01N21/47 ,  G06F7/20 ,  G01N21/956

Abstract: Disclosed is a process monitoring method, and an associated metrology apparatus. The method comprises: comparing measured target response spectral sequence data relating to the measurement response of actual targets to equivalent reference target response sequence data relating to a measurement response of the targets as designed; and performing a process monitoring action based on the comparison of said measured target response sequence data and reference target response sequence data. The method may also comprise determining stack parameters from the measured target response spectral sequence data and reference target response spectral sequence data.

公开(公告)号：US20160146740A1

公开(公告)日：2016-05-26

申请号：US14945257

申请日：2015-11-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Yen-Wen Lu ,  Jay Jianhui Chen ,  Wei Liu ,  Boris Menchtchikov ,  Jen-Shiang Wang ,  Te-Chih Huang

IPC: G01N21/88 ,  G01N21/95 ,  G01B11/27

CPC classification number: G01N21/8806 ,  G01B11/272 ,  G01N21/9501 ,  G01N2021/8822 ,  G03F7/70516 ,  G03F7/70633 ,  G03F7/70683

Abstract: A method to determine an overlay error between a first structure and a second structure, wherein the first structure and second structures are on different layers on a substrate and are imaged onto the substrate by a lithographic process, the method comprising: obtaining an apparent overlay error; obtaining a systematic error caused by a factor other than misalignment of the first and second structures; and determining the overlay error by removing the systematic error from the apparent overlay error. The method may alternatively comprise obtaining apparent characteristics of diffraction orders of diffraction by an overlapping portion of the first and second structures; obtaining corrected characteristics of the diffraction orders; determining the overlay error from the corrected characteristics; and adjusting a characteristic of the lithographic process based on the overlay error.

Abstract translation: 一种确定第一结构和第二结构之间的覆盖误差的方法，其中所述第一结构和第二结构位于衬底上的不同层上，并通过光刻工艺成像到所述衬底上，所述方法包括：获得明显的重叠误差 ; 获得由除了第一和第二结构的未对准之外的因素引起的系统误差; 并通过从明显重叠错误中移除系统误差来确定覆盖误差。 该方法可以替代地包括通过第一和第二结构的重叠部分获得衍射衍射级数的明显特征; 获得衍射级的校正特性; 从校正的特征确定覆盖误差; 以及基于重叠误差来调整光刻处理的特性。