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公开(公告)号:US20220318161A1
公开(公告)日:2022-10-06
申请号:US17219273
申请日:2021-03-31
Applicant: Advanced Micro Devices, Inc.
Inventor: Kevin M. Brandl , Indrani Paul , Jean J. Chittilappilly , Abhishek Kumar Verma , James R. Magro , Kavyashree Pilar
IPC: G06F13/16 , G06F1/3234 , G06F1/3296 , G11C11/406
Abstract: A memory controller includes a command queue and an arbiter operating in a first voltage domain, and a physical layer interface (PHY) operating in a second voltage domain. The memory controller includes isolation cells operable to isolate the PHY from the first voltage domain. A local power state controller, in response to a first power state command, provides configuration and state data for storage in an on-chip RAM memory, causes the memory controller to enter a powered-down state, and maintains the PHY in a low-power state in which the second voltage domain is powered while the memory controller is in the powered-down state.
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公开(公告)号:US11934251B2
公开(公告)日:2024-03-19
申请号:US17219407
申请日:2021-03-31
Applicant: Advanced Micro Devices, Inc.
Inventor: James R. Magro , Christopher Weaver , Abhishek Kumar Verma
IPC: G06F1/32 , G06F1/08 , G06F1/3225 , G06F1/3234 , G06F1/3287 , G06F3/06
CPC classification number: G06F1/3275 , G06F1/08 , G06F1/3225 , G06F1/3287 , G06F3/0625 , G06F3/0634 , G06F3/0658 , G06F3/0679
Abstract: A memory controller couples to a data fabric clock domain, and to a physical layer interface circuit PHY clock domain. A first interface circuit adapts transfers between the data fabric clock domain (FCLK) and the memory controllers clock domain, and a second interface circuit couples the memory controller to the PHY clock domain. A power controller responds to a power state change request by sending commands to the second interface circuit to change parameters of a memory system and to update a set of timing parameters of the memory controller according to a selected power state of a plurality of power states. The power controller further responds to a request to synchronize with a new frequency on the FCLK domain by changing a set of timing parameters of the clock interface circuit without changing the set of timing parameters of the memory system or the selected power state.
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公开(公告)号:US11636054B2
公开(公告)日:2023-04-25
申请号:US17219273
申请日:2021-03-31
Applicant: Advanced Micro Devices, Inc.
Inventor: Kevin M. Brandl , Indrani Paul , Jean J. Chittilappilly , Abhishek Kumar Verma , James R. Magro , Kavyashree Pilar
IPC: G06F1/3234 , G06F13/16 , G11C11/406 , G06F1/3296 , G06F3/06
Abstract: A memory controller includes a command queue and an arbiter operating in a first voltage domain, and a physical layer interface (PHY) operating in a second voltage domain. The memory controller includes isolation cells operable to isolate the PHY from the first voltage domain. A local power state controller, in response to a first power state command, provides configuration and state data for storage in an on-chip RAM memory, causes the memory controller to enter a powered-down state, and maintains the PHY in a low-power state in which the second voltage domain is powered while the memory controller is in the powered-down state.
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公开(公告)号:US20220317755A1
公开(公告)日:2022-10-06
申请号:US17219407
申请日:2021-03-31
Applicant: Advanced Micro Devices, Inc.
Inventor: James R. Magro , Christopher Weaver , Abhishek Kumar Verma
IPC: G06F1/3234 , G06F1/3225 , G06F1/3287 , G06F1/08 , G06F3/06
Abstract: A memory controller couples to a data fabric clock domain, and to a physical layer interface circuit PHY clock domain. A first interface circuit adapts transfers between the data fabric clock domain (FCLK) and the memory controllers clock domain, and a second interface circuit couples the memory controller to the PHY clock domain. A power controller responds to a power state change request by sending commands to the second interface circuit to change parameters of a memory system and to update a set of timing parameters of the memory controller according to a selected power state of a plurality of power states. The power controller further responds to a request to synchronize with a new frequency on the FCLK domain by changing a set of timing parameters of the clock interface circuit without changing the set of timing parameters of the memory system or the selected power state.
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