公开(公告)号：US20230027674A1

公开(公告)日：2023-01-26

申请号：US17958237

申请日：2022-09-30

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Jhao-Cheng CHEN ,  Huang-Hsien CHANG ,  Wen-Long LU ,  Shao Hsuan CHUANG ,  Ching-Ju CHEN ,  Tse-Chuan CHOU

IPC: H01L23/00

Abstract: A semiconductor device and method for manufacturing the same are provided. The method includes providing a first substrate. The method also includes forming a first metal layer on the first substrate. The first metal layer includes a first metal material. The method further includes treating a first surface of the first metal layer with a solution including an ion of a second metal material. In addition, the method includes forming a plurality of metal particles including the second metal material on a portion of the first surface of the first metal layer.

公开(公告)号：US20200211863A1

公开(公告)日：2020-07-02

申请号：US16813364

申请日：2020-03-09

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ying-Xu LU ,  Tang-Yuan CHEN ,  Jin-Yuan LAI ,  Tse-Chuan CHOU ,  Meng-Kai SHIH ,  Shin-Luh TARNG

IPC: H01L21/56 ,  H01L23/498 ,  H01L23/00 ,  H01L23/13

Abstract: The present disclosure relates to a semiconductor device package including a substrate, a semiconductor device and an underfill. The substrate has a first surface and a second surface angled with respect to the first surface. The semiconductor device is mounted on the first surface of the substrate and has a first surface facing the first surface of the substrate and a second surface angled with respect to the first surface of the substrate. The underfill is disposed between the first surface of the semiconductor device and the first surface of the substrate. The second surface of the substrate is located in the substrate and external to a vertical projection of the semiconductor device on the first surface of the substrate. A distance between the second surface of the substrate and an extension of the second surface of the semiconductor device on the first surface of the substrate is less than or equal to twice a distance between the first surface of the semiconductor device and the first surface of the substrate. The second surface of the substrate extends along at least three sides of the semiconductor device.

公开(公告)号：US20180358238A1

公开(公告)日：2018-12-13

申请号：US15619415

申请日：2017-06-09

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Jin-Yuan LAI ,  Tang-Yuan CHEN ,  Ying-Xu LU ,  Dao-Long CHEN ,  Kwang-Lung LIN ,  Chih-Pin HUNG ,  Tse-Chuan CHOU ,  Ming-Hung CHEN ,  Chi-Hung PAN

IPC: H01L21/56 ,  H01L23/00 ,  H01L21/48 ,  H01L23/498

CPC classification number: H01L21/563 ,  H01L21/481 ,  H01L23/49838 ,  H01L23/49894 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/16235 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/83143 ,  H01L2224/83493 ,  H01L2224/83888 ,  H01L2224/83889 ,  H01L2924/01006

Abstract: The present disclosure relates to a semiconductor device package comprising a substrate, a semiconductor device, and a underfill. The substrate includes a top surface defining a mounting area, and a barrier section on the top surface and adjacent to the mounting area. The semiconductor device is mounted on the mounting area of the substrate. The underfill is disposed between the semiconductor device and the mounting area and the barrier section of the substrate. A contact angle between a surface of the underfill and the barrier section is greater than or equal to about 90 degrees.

公开(公告)号：US20210296267A1

公开(公告)日：2021-09-23

申请号：US16825713

申请日：2020-03-20

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Jhao-Cheng CHEN ,  Huang-Hsien CHANG ,  Wen-Long LU ,  Shao Hsuan CHUANG ,  Ching-Ju CHEN ,  Tse-Chuan CHOU

IPC: H01L23/00

Abstract: A semiconductor device and method for manufacturing the same are provided. The method includes providing a first substrate. The method also includes forming a first metal layer on the first substrate. The first metal layer includes a first metal material. The method further includes treating a first surface of the first metal layer with a solution including an ion of a second metal material. In addition, the method includes forming a plurality of metal particles including the second metal material on a portion of the first surface of the first metal layer.

公开(公告)号：US20180358237A1

公开(公告)日：2018-12-13

申请号：US15619413

申请日：2017-06-09

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ying-Xu LU ,  Tang-Yuan CHEN ,  Jin-Yuan LAI ,  Tse-Chuan CHOU ,  Meng-Kai SHIH ,  Shin-Lih TARNG

IPC: H01L21/56 ,  H01L23/498 ,  H01L23/00

Abstract: The present disclosure relates to a semiconductor device package including a substrate, a semiconductor device and an underfill. The substrate has a first surface and a second surface angled with respect to the first surface. The semiconductor device is mounted on the first surface of the substrate and has a first surface facing the first surface of the substrate and a second surface angled with respect to the first surface of the substrate. The underfill is disposed between the first surface of the semiconductor device and the first surface of the substrate. The second surface of the substrate is located in the substrate and external to a vertical projection of the semiconductor device on the first surface of the substrate. A distance between the second surface of the substrate and an extension of the second surface of the semiconductor device on the first surface of the substrate is less than or equal to twice a distance between the first surface of the semiconductor device and the first surface of the substrate. The second surface of the substrate extends along at least three sides of the semiconductor device.