Electronic and optical devices and methods of forming these devices
    3.
    发明申请
    Electronic and optical devices and methods of forming these devices 有权
    电子和光学装置以及形成这些装置的方法

    公开(公告)号:US20060228064A1

    公开(公告)日:2006-10-12

    申请号:US11444542

    申请日:2006-06-02

    IPC分类号: G02F1/035

    摘要: Electronic and optical (or photonic) devices with variable or switchable properties and methods used to form these devices, are disclosed. More specifically, the present invention involves forming layers of conductive material and dielectric material or materials with varying conductivity and indexes of refraction to form various electronic and optical devices. One such layer of adjustable material is formed by depositing epitaxial or reduced grain boundary barium strontium titanate on the C-plane of sapphire.

    摘要翻译: 公开了具有可变或可切换特性的电子和光学(或光子)器件和用于形成这些器件的方法。 更具体地,本发明涉及形成具有导电性和折射率的导电材料和介电材料或材料的层,以形成各种电子和光学器件。 通过在蓝宝石的C平面上沉积外延或还原的晶界钡钛酸锶而形成一个这样的可调节材料层。

    Tunable dielectric radio frequency microelectromechanical system capacitive switch
    6.
    发明申请
    Tunable dielectric radio frequency microelectromechanical system capacitive switch 有权
    可调介质射频微机电系统电容开关

    公开(公告)号:US20060208823A1

    公开(公告)日:2006-09-21

    申请号:US11374815

    申请日:2006-03-14

    IPC分类号: H01P5/04

    摘要: The invention is a tunable RF MEMS switch developed with a BST dielectric at the contact interface. BST has a very high dielectric constant (>300) making it very appealing for RF MEMS capacitive switches. The tunable dielectric constant of BST provides a possibility of making linearly tunable MEMS capacitive switches. The capacitive tunable RF MEMS switch with a BST dielectric is disclosed showing its characterization and properties up to 40 GHz.

    摘要翻译: 本发明是在接触界面处用BST电介质开发的可调谐RF MEMS开关。 BST具有非常高的介电常数(> 300),使其对RF MEMS电容开关非常有吸引力。 BST的可调谐介电常数提供了线性可调MEMS电容开关的可能性。 公开了具有BST电介质的电容可调谐RF MEMS开关,其显示其高达40GHz的特性和特性。