公开(公告)号：US11915917B2

公开(公告)日：2024-02-27

申请号：US16902194

申请日：2020-06-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Alan Ritchie ,  John C. Forster ,  Muhammad Rasheed

IPC: H01J37/34 ,  H01J37/32 ,  C23C14/34

CPC classification number: H01J37/3441 ,  C23C14/34 ,  H01J37/32504 ,  H01J37/32651 ,  H01J37/3405 ,  H01J37/3411

Abstract: Methods and apparatus for physical vapor deposition are provided herein. In some embodiments, a process kit shield for use in a physical vapor deposition chamber may include an electrically conductive body having one or more sidewalls defining a central opening, wherein the body has a ratio of a surface area of inner facing surfaces of the one or more sidewalls to a height of the one or more sidewalls of about 2 to about 3.

公开(公告)号：US10692706B2

公开(公告)日：2020-06-23

申请号：US13798021

申请日：2013-03-12

Applicant: APPLIED MATERIALS, INC.

Inventor： Alan Ritchie ,  John C. Forster ,  Muhammad Rasheed

IPC: H01J37/34 ,  H01J37/32 ,  C23C14/34

Abstract: Methods and apparatus for physical vapor deposition are provided herein. In some embodiments, a process kit shield for use in a physical vapor deposition chamber may include an electrically conductive body having one or more sidewalls defining a central opening, wherein the body has a ratio of a surface area of inner facing surfaces of the one or more sidewalls to a height of the one or more sidewalls of about 2 to about 3.

公开(公告)号：US10099245B2

公开(公告)日：2018-10-16

申请号：US13831285

申请日：2013-03-14

Applicant: APPLIED MATERIALS, INC.

Inventor： John Forster ,  Zhenbin Ge ,  Alan Ritchie

IPC: C23C16/44 ,  H01L21/67 ,  B05C21/00 ,  C23C14/35 ,  H01J37/32 ,  H01J37/34

Abstract: Variable geometry process kits for use in semiconductor process chambers have been provided herein. In some embodiments, a process kit for use in a semiconductor process chamber includes: an annular body configured to rest about a periphery of a substrate support; a first ring positioned coaxially with the annular body and supported by the annular body; a second ring positioned coaxially with the first ring and supported by the first ring; and an annular shield comprising a horizontal leg positioned coaxially with the second ring such that a portion of the horizontal leg is aligned with and below portions of the first ring and second ring.

公开(公告)号：US09812303B2

公开(公告)日：2017-11-07

申请号：US14182740

申请日：2014-02-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Alan Ritchie ,  Ryan Hanson ,  Xianwei Zhao

IPC: C23C14/34 ,  H01J37/34

CPC classification number: H01J37/3455 ,  H01J37/3405 ,  H01J37/3452 ,  H01J37/3461

Abstract: Methods and apparatus for a magnetron assembly are provided herein. In some embodiments, a magnetron assembly includes a first base plate; a second base plate movable with respect to the first base plate between a first position and a second position; an outer magnetic pole in the shape of a loop and comprising an outer magnetic pole section coupled to the first base plate and an outer magnetic pole section coupled to the second base plate; and an inner magnetic pole disposed within the outer magnetic pole, wherein the outer and inner magnetic poles define a closed loop magnetic field, and wherein the closed loop magnetic field is maintained when the second base plate is disposed in both the first position and a second position.

公开(公告)号：US09611539B2

公开(公告)日：2017-04-04

申请号：US13749791

申请日：2013-01-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Zhenbin Ge ,  Alan Ritchie ,  Adolph Miller Allen

IPC: C23C14/35 ,  C23C14/34 ,  C23C14/04 ,  H01J37/32 ,  H01J37/34

CPC classification number: C23C14/35 ,  C23C14/046 ,  C23C14/345 ,  C23C14/3492 ,  C23C14/351 ,  H01J37/32706 ,  H01J37/3299 ,  H01J37/3405

Abstract: Methods and apparatus for depositing a metal-containing layer on a substrate are provided herein. In some embodiments, a method of processing a substrate in a physical vapor deposition (PVD) chamber includes applying RF power at a VHF frequency to a target comprising a metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas; optionally applying a DC power to the target to direct the plasma towards the target; sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms; and controlling the plasma sheath voltage between the plasma and the substrate to form a metal-containing layer having a desired crystal structure and or desired morphology on feature structures.

公开(公告)号：US09028659B2

公开(公告)日：2015-05-12

申请号：US13961165

申请日：2013-08-07

Applicant: Applied Materials, Inc.

Inventor： Alan Ritchie ,  Zhenbin Ge ,  Tza-Jing Gung ,  Vivek Gupta

IPC: C23C14/35 ,  H01J37/32 ,  H01J37/34

CPC classification number: C23C14/35 ,  H01J37/3266 ,  H01J37/3408 ,  H01J37/3452

Abstract: Embodiments of magnetrons suitable to provide extended target life in radio frequency (RF) plasmas are provided. In some embodiments, apparatus and methods are provided to control film uniformity while extending the target life in an RF plasma. In some embodiments, the present invention may facilitate one or more of very high target utilization, more uniform metal ionization, and more uniform deposition on a substrate. In some embodiments, a magnetron may include a magnet support member having a center of rotation; and a plurality of magnetic tracks, each track comprising a pair of open loop magnetic poles parallel to and spaced apart from each other, wherein one track is disposed near the center of the magnet support member, and wherein a different track is disposed in a position corresponding to an outer edge of a target material to be deposited on a substrate when installed in the PVD process chamber.

Abstract translation: 提供了适合在射频（RF）等离子体中提供延长的目标寿命的磁控管的实施例。 在一些实施例中，提供了设备和方法来控制膜均匀性，同时延长RF等离子体中的目标寿命。 在一些实施方案中，本发明可以促进在基材上非常高的目标利用，更均匀的金属电离和更均匀的沉积中的一种或多种。 在一些实施例中，磁控管可以包括具有旋转中心的磁体支撑构件; 和多个磁道，每个轨道包括彼此平行并间隔开的一对开环磁极，其中一个轨道设置在磁体支撑构件的中心附近，并且其中不同的轨道设置在一个位置 对应于当安装在PVD处理室中时要沉积在基板上的目标材料的外边缘。