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公开(公告)号：US20240112889A1
公开(公告)日：2024-04-04
申请号：US18372811
申请日：2023-09-26
Applicant: Applied Materials, Inc.
IPC: H01J37/32 , H01L21/67 , H01L21/683
CPC classification number: H01J37/3244 , H01J37/32715 , H01L21/67069 , H01L21/6833
Abstract: The disclosure relates to a substrate support assembly for reducing the evacuation time when using argon gas. In one embodiment, a substrate support assembly includes a porous plug within the substrate support assembly. The porous plug includes a first cylindrical section with a first volume and axial length, a second cylindrical section with a second volume and axial length. The first cylindrical section has a larger volume than the second cylindrical section. The first cylindrical section and second cylindrical section have a volume ratio between about 2 and about 12. The first cylindrical section axial length and second cylindrical section axial length have a length ratio between about 2 and about 10.
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Patent Agency Ranking
公开(公告)号：US20240385048A1
公开(公告)日：2024-11-21
申请号：US18789641
申请日：2024-07-30
Applicant: Applied Materials, Inc.
Inventor： Bruce E. ADAMS , Samuel C. HOWELLS , Alvaro GARCIA , Barry P. CRAVER , Tony Jefferson GNANAPRAKASA , Lei LIAN
Abstract: A method and apparatus for determining the temperature of a substrate within a processing chamber are described herein. The methods and apparatus described herein utilize an etalon assembly and a heterodyning effect to determine a first temperature of a substrate. The first temperature of the substrate is determined without physically contacting the substrate. A separate temperature sensor also measures a second temperature of the substrate and/or the substrate support at a similar location. The first temperature and the second temperature are utilized to calibrate one of the temperature sensors disposed within the substrate support, a model of the processes performed within the processing chamber, or to adjust a process parameter of the process performed within the processing chamber.
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公开(公告)号：US20240112894A1
公开(公告)日：2024-04-04
申请号：US18371641
申请日：2023-09-22
Applicant: Applied Materials, Inc.
Inventor： Sankaranarayanan RAVI , Alvaro GARCIA , Martin Perez GUZMAN , Stephen D. PROUTY , Andreas SCHMID
IPC: H01J37/32 , H01L21/683
CPC classification number: H01J37/32724 , H01L21/6833 , H01J2237/002 , H01J2237/2007
Abstract: A method and apparatus for cooling a semiconductor chamber are described herein. A semiconductor chamber component, includes a powered region, a grounded region, and a fluid conduit disposed within the semiconductor chamber component and passing through the powered region and grounded region, the fluid conduit comprising a ceramic material.
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公开(公告)号：US20240112939A1
公开(公告)日：2024-04-04
申请号：US18372818
申请日：2023-09-26
Applicant: Applied Materials, Inc.
Inventor： Tony Jefferson GNANAPRAKASA , Alvaro GARCIA , Gautham BAMMANAHALLI , Tatsuichiro INOUE , Nathaniel MOORE
IPC: H01L21/683 , H01J37/32
CPC classification number: H01L21/6831 , H01J37/32715 , H01J2237/002 , H01J2237/2007
Abstract: Embodiments of this disclosure include methods of chucking and de-chucking a substrate. A method of chucking a substrate to a surface of an electrostatic chuck includes applying a first voltage to a chucking electrode in the ESC during a chucking time interval, supplying an inert gas at a first pressure to a backside of the substrate during the chucking time interval, applying a second voltage to the chucking electrode in the ESC after the chucking time interval, the second voltage being higher than the first voltage, and supplying the inert gas at a second pressure to the backside of the substrate after the chucking time interval, the second pressure being higher than the first pressure of the inert gas.
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5.发明公开公开(公告)号：US20240110836A1
公开(公告)日：2024-04-04
申请号：US18368052
申请日：2023-09-14
Applicant: Applied Materials, Inc.
Inventor： Sankaranarayanan RAVI , Alvaro GARCIA , Martin Perez GUZMAN , Stephen Donald PROUTY , Andrew Antoine NOUJAIM
CPC classification number: G01K11/00 , H01J37/32715 , H01J2237/2007 , H01J2237/24585 , H01J2237/334
Abstract: The disclosure relates to a substrate support assembly and apparatus for measuring the temperature of a substrate disposed on the support assembly. In one embodiment, a substrate temperature measurement apparatus includes a substrate support assembly, a probe assembly, and a probe target. The substrate support assembly includes an electrostatic chuck and one or more plates. The probe assembly within the substrate support assembly extends through one or more of the one or more plates. The probe assembly includes an optical probe sensor, an optical fiber coupled to the optical probe sensor, and an insulating sheath surrounding the optical fiber. The probe target includes a phosphor coating, is in contact with the electrostatic chuck, and is spaced from the probe assembly.
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公开(公告)号：US20230102821A1
公开(公告)日：2023-03-30
申请号：US17487993
申请日：2021-09-28
Applicant: Applied Materials, Inc.
Inventor： Bruce E. ADAMS , Samuel C. HOWELLS , Alvaro GARCIA , Barry P. CRAVER , Tony Jefferson GNANAPRAKASA , Lei LIAN
Abstract: A method and apparatus for determining the temperature of a substrate within a processing chamber are described herein. The methods and apparatus described herein utilize an etalon assembly and a heterodyning effect to determine a first temperature of a substrate. The first temperature of the substrate is determined without physically contacting the substrate. A separate temperature sensor also measures a second temperature of the substrate and/or the substrate support at a similar location. The first temperature and the second temperature are utilized to calibrate one of the temperature sensors disposed within the substrate support, a model of the processes performed within the processing chamber, or to adjust a process parameter of the process performed within the processing chamber.
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